AO7801
Abstract: SC-70-6 D06A
Text: AO7801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7801 uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide
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Original
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AO7801
AO7801
OT323
AO7801L
SC-70-6
D06A
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PDF
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AO7801
Abstract: ao7801l SC-70-6 D06A
Text: Rev 3: June 2005 AO7801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7801 uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide
|
Original
|
AO7801
AO7801
OT323
AO7801L
SC-70-6
D06A
|
PDF
|