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    AO4822 Search Results

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    AO4822 Price and Stock

    Alpha & Omega Semiconductor AO4822

    MOSFET 2N-CH 30V 8A 8SOIC
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    DigiKey AO4822 Reel
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    Alpha & Omega Semiconductor AO4822A

    MOSFET 2N-CH 30V 8A 8SOIC
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    DigiKey AO4822A Cut Tape 1
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    AO4822A Digi-Reel 1
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    AO4822A Reel 3,000
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    TME AO4822A 1,598 1
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    ComSIT USA AO4822A 1,760
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    Alpha & Omega Semiconductor AO4822AL

    MOSFET 2N-CH 30V 8A 8SOIC
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    Alpha & Omega Semiconductor AO4822_101

    MOSFET 2N-CH 30V 8A 8SOIC
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    Alpha & Omega Semiconductor AO4822L_101

    MOSFET 2N-CH 30V 8A 8SOIC
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    AO4822 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AO4822 Alpha & Omega Semiconductor MOSFET, Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO4822 Alpha & Omega Semiconductor Dual N-channel Enhancement Mode Field Effect Transistor Original PDF
    AO4822 Alpha & Omega Semiconductor General Purpose - 30V Dual N-channel MOSFET (Replacement AO4822A) Original PDF
    AO4822A Alpha & Omega Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO4822A Alpha & Omega Semiconductor General Purpose - 30V Dual N-channel MOSFET Original PDF
    AO4822AL Alpha & Omega Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO4822AL_102 Alpha & Omega Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2N-CH 30V 8A 8SOIC Original PDF
    AO4822L Alpha & Omega Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO4822L_101 Alpha & Omega Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2N-CH 30V 8A Original PDF
    AO4822_101 Alpha & Omega Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2N-CH 30V 8A Original PDF

    AO4822 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: AO4822A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4822A uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4822A is Pb-free


    Original     		AO4822A AO4822A PDF

    Untitled

    Abstract: No abstract text available
    Text: AO4822 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4822 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications.Standard Product AO4822


    Original     		AO4822 AO4822 PDF

    AO4822

    Abstract: AO4822L
    Text: AO4822 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4822/L uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications.AO4822 and AO4822L are electrically


    Original     		AO4822 AO4822/L AO4822 AO4822L -AO4822L PDF

    AO4822A

    Abstract: AO4822AL
    Text: AO4822A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4822A uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4822A is Pb-free


    Original     		AO4822A AO4822A AO4822AL PDF

    AO4822AL

    Abstract: No abstract text available
    Text: AO4822AL 30V Dual N-Channel MOSFET General Description Features The AO4822AL uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS (V) = 30V ID = 8.5A (VGS = 10V)


    Original     		AO4822AL AO4822AL PDF

    30V-8A

    Abstract: ao4822
    Text: AO4822 30V Dual N-channel MOSFET General Description Product Summary The AO4822 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=10V) VDS 30V


    Original     		AO4822 AO4822 30V-8A PDF

    Untitled

    Abstract: No abstract text available
    Text: AO4822A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4822A uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4822A is Pb-free


    Original     		AO4822A AO4822A AO4822AL PDF

    Untitled

    Abstract: No abstract text available
    Text: AO4822 30V Dual N-channel MOSFET General Description Product Summary The AO4822 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS ID (at VGS=10V) 30V


    Original     		AO4822 AO4822 PDF

    Untitled

    Abstract: No abstract text available
    Text: AO4822A 30V Dual N-channel MOSFET General Description Product Summary The AO4822A uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS ID (at VGS=10V)


    Original     		AO4822A AO4822A PDF

    AO4822A

    Abstract: No abstract text available
    Text: AO4822A 30V Dual N-channel MOSFET General Description Product Summary The AO4822A uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=10V) VDS


    Original     		AO4822A AO4822A PDF

    AO4822

    Abstract: AO4822L
    Text: Rev0: June 2003 Rev1: Mar 2004 AO4822, AO4822L Green Product Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4822 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM


    Original     		AO4822, AO4822L AO4822 AO4822L PDF

    AO4822

    Abstract: AO4822L
    Text: AO4822 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4822 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4822 is Pb-free


    Original     		AO4822 AO4822 AO4822L AO4822L PDF

    AON6704L

    Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
    Text: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower


    Original     		O-252) O-263) MSOP-10 SC70-3 SC70-6 SC-89-3 SC-89-6 OD523 OD923 OT23-3 AON6704L AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025 PDF

    samsung r580

    Abstract: BA41-01174A marvell 88E8059 88E8059 SMSC mec1308 TPS51125 mec1308 tps51125 SCHEMATIC smd diode code MK a8 c917
    Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 8. Block Diagram and Schematic D C B A 4 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL


    Original     		BA41-01174A 100nF MIC502 B4013AM423-32 MIC500 SOM4013SL-G443-C1033 samsung r580 marvell 88E8059 88E8059 SMSC mec1308 TPS51125 mec1308 tps51125 SCHEMATIC smd diode code MK a8 c917 PDF

    MX25L1605DM2I-12G

    Abstract: samsung R540 service AR5B95 samsung r730 NP303-CQS-2 mx25l1605dm2i NP303-CQS-2-F1 88E8040-A0-NNB2-C000 bremen-ul 88E8040-A0-NNB2C000
    Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 6. Material List 6-1. 15" Material List Level .1 .1 .1 .1 .1 .1 .1 .1 .1 Code 0203-001869


    Original     		BA41-01201A BA59-02572A WLAN-802 11BGN 125MM R530/R730 BA99-07566A MX25L1605DM2I-12G samsung R540 service AR5B95 samsung r730 NP303-CQS-2 mx25l1605dm2i NP303-CQS-2-F1 88E8040-A0-NNB2-C000 bremen-ul 88E8040-A0-NNB2C000 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    AO4946

    Abstract: AOZ1242 AO4407A AOZ1242AI AO7408 AO3460 AO4936 AOZ1212AI AOD484 ao4466
    Text: ALPHA & OMEGA SEMICONDUCTOR Selector Guide Q2/Q3 2008 www.aosmd.com Technology. Innovation. Powering the Future. TABLE OF CONTENTS Corporate Overview Mosfets Power ICs Transient Voltage Suppressors TVS Package Types www.aosmd.com PAGE 2 PAGE 3 - 18 PAGE 19 - 22


    Original     		PDF

    samsung R540 service

    Abstract: L0613 samsung R540 service manual atheros ar5B95 JLCD501 AC82GL40 ATHEROS WLL6160-D99 DAC-09N019 4309-00 ltn156at01
    Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다. - - This Document can not be used without Samsung's authorization. – 6. Material List Level 1 Parts Code Assembled EA Spec. Description ,-


    Original     		BA44-00242A BA62-00484B BA62-00484A BA31-00062A BA31-00062B BA96-04071A BA97-02919A BA81-04551A BA75-02201D BA81-06575A samsung R540 service L0613 samsung R540 service manual atheros ar5B95 JLCD501 AC82GL40 ATHEROS WLL6160-D99 DAC-09N019 4309-00 ltn156at01 PDF

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


    Original     		O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139 PDF

    BA41-01086A

    Abstract: BA41-01084A LTST-C193TBKT-AC tps51125 LFE8423 smd diode ae c604 smd 475 20k 233 DIODE ps8171 qingdao-int 22p smd
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D QingDao_Int g n l u a s i t m n a e S fid n


    Original     		BA41-01084A BA41-01085A BA41-01086A 25MHz 75inches LTST-C193TBKT-AC tps51125 LFE8423 smd diode ae c604 smd 475 20k 233 DIODE ps8171 qingdao-int 22p smd PDF

    MEC1308-NU

    Abstract: APW7141QAITRG AMD CPU S1g3 rx881 RX881M DIODE SMD AE22 TPS51125 N25 3KV SEC APW7141 mec1308
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Page. 1 Page. 2 Page. 3 Page. 4


    Original     		VDD18 BA41-xxxxxxA MEC1308-NU APW7141QAITRG AMD CPU S1g3 rx881 RX881M DIODE SMD AE22 TPS51125 N25 3KV SEC APW7141 mec1308 PDF

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx PDF

    c945 g 528

    Abstract: RX781M smd diode ae c604 SLG8SP628VTR 88E8057 RX781 SB700 slg8sp628v 22p smd H8S-2110B
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents QingDao-D D Model Name PBA Name


    Original     		ALC272 Sheet46 Sheet47 Sheet48 Sheet49 sheet12] Sheet50 c945 g 528 RX781M smd diode ae c604 SLG8SP628VTR 88E8057 RX781 SB700 slg8sp628v 22p smd H8S-2110B PDF

    SCB-1700N

    Abstract: SWRCH18A UL3302 AWG28 Ht1 SMD CODE BA81-07077A M470T2864EH3-CF7 smd ht1 C3604BD-F hdd 1.8 BA96-04113C
    Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 6. Material List Level Code 1 BA44-00264A 1 Assembled ADAPTOR 1 BA43-00212A 1 BATTERY 1 BA43-00220A


    Original     		BA44-00264A BA43-00212A BA43-00220A BA43-00221A BA43-00222A BA46-08356A BA46-09951A BA46-10898A BA99-14031A BA68-03029A SCB-1700N SWRCH18A UL3302 AWG28 Ht1 SMD CODE BA81-07077A M470T2864EH3-CF7 smd ht1 C3604BD-F hdd 1.8 BA96-04113C PDF