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    Alpha & Omega Semiconductor AO4821

    MOSFET 2P-CH 12V 9A 8SOIC
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    AO4821 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AO4821 Alpha & Omega Semiconductor Dual P-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO4821 Alpha & Omega Semiconductor Load Switch - 12V Dual P-Channel MOSFET Original PDF
    AO4821L Alpha & Omega Semiconductor Dual P-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO4821_101 Alpha & Omega Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 8SOIC Original PDF

    AO4821 Datasheets Context Search

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    ao4821

    Abstract: 70°C RL067 M3025
    Text: AO4821 12V Dual P-Channel MOSFET General Description Product Summary The AO4821 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch.


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    PDF AO4821 AO4821 70°C RL067 M3025

    Untitled

    Abstract: No abstract text available
    Text: AOS Semiconductor Product Reliability Report AO4821/AO4821L, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Nov 10, 2005 1 This AOS product reliability report summarizes the qualification result for AO4821. Accelerated


    Original
    PDF AO4821/AO4821L, AO4821. AO4821 10-5eV Mil-Std-105D

    Untitled

    Abstract: No abstract text available
    Text: AO4821 12V Dual P-Channel MOSFET General Description Product Summary The AO4821 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch.


    Original
    PDF AO4821 AO4821 Gate-Source00

    RL067

    Abstract: AO4821L AO4821
    Text: AO4821L 12V Dual P-Channel MOSFET General Description Product Summary VDS The AO4821L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch.


    Original
    PDF AO4821L AO4821L RL067 AO4821

    AO4821L

    Abstract: AO4821
    Text: AO4821 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4821 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM


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    PDF AO4821 AO4821 AO4821L

    AON6704L

    Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
    Text: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower


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    PDF O-252) O-263) MSOP-10 SC70-3 SC70-6 SC-89-3 SC-89-6 OD523 OD923 OT23-3 AON6704L AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025

    AO4946

    Abstract: AOZ1242 AO4407A AOZ1242AI AO7408 AO3460 AO4936 AOZ1212AI AOD484 ao4466
    Text: ALPHA & OMEGA SEMICONDUCTOR Selector Guide Q2/Q3 2008 www.aosmd.com Technology. Innovation. Powering the Future. TABLE OF CONTENTS Corporate Overview Mosfets Power ICs Transient Voltage Suppressors TVS Package Types www.aosmd.com PAGE 2 PAGE 3 - 18 PAGE 19 - 22


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