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    AO37 Search Results

    AO37 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AO3700 Alpha & Omega Semiconductor N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode Original PDF
    AO3701 Alpha & Omega Semiconductor P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode Original PDF
    AO3703 Alpha & Omega Semiconductor P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode Original PDF
    AO3703L Alpha & Omega Semiconductor P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode Original PDF

    AO37 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: AO3702 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO3702/L uses advanced trench technology to provide excellent RDS ON , low gate charge. A Schottky diode is provided to facilitate the implementation of


    Original     		PDF AO3702 AO3702/L AO3702L -AO3702L OT-23-5 100us 100ms

    AO3700

    Abstract: No abstract text available
    Text: AO3700 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features VDS V = 30V ID = 3.3A (V GS = 10V) RDS(ON) < 65mΩ (VGS = 10V) RDS(ON) < 75mΩ (VGS = 4.5V) RDS(ON) < 160mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 20V, I F = 1A, VF<0.5V@0.5A


    Original     		PDF AO3700 AO3700 AO3700L OT-23-5 0E-03 0E-04 0E-05

    ao37

    Abstract: No abstract text available
    Text: AO3702 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO3702/L uses advanced trench technology to provide excellent RDS ON , low gate charge. A Schottky diode is provided to facilitate the implementation of


    Original     		PDF AO3702 AO3702/L AO3702 AO3702L -AO3702L OT-23-5 0E-03 0E-04 0E-05 ao37

    AO3700

    Abstract: No abstract text available
    Text: AO3700 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features VDS V = 30V ID = 3.3A (V GS = 10V) RDS(ON) < 65mΩ (VGS = 10V) RDS(ON) < 75mΩ (VGS = 4.5V) RDS(ON) < 160mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 20V, I F = 1A, VF<0.5V@0.5A


    Original     		PDF AO3700 AO3700 AO3700L OT-23-5 0E-03 0E-04 0E-05

    sony TA-70

    Abstract: 27a diode AO3703 AO3703L DSA002702
    Text: AO3703 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features VDS V = -20V ID = -2.7 A (VGS = -10V) RDS(ON) < 97mΩ (VGS = -4.5V) RDS(ON) < 130mΩ (VGS = -2.5V) RDS(ON) < 190mΩ (VGS = -1.8V) The AO3703 uses advanced trench technology to provide


    Original     		PDF AO3703 AO3703 AO3703L OT-23-5 sony TA-70 27a diode DSA002702

    Schottky Diode 50V 3A

    Abstract: AO3701L AO3701
    Text: AO3701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features VDS V = -20V ID = -3A (VGS = -10V) RDS(ON) < 80mΩ (VGS = -10V) RDS(ON) < 100mΩ (VGS = -4.5V) RDS(ON) < 145mΩ (VGS = -2.5V) ESD Rating: 2000V HBM


    Original     		PDF AO3701 AO3701 AO3701L 0E-03 0E-04 0E-05 0E-06 Schottky Diode 50V 3A

    AO3435

    Abstract: ao37 AO3705
    Text: AO3705 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO3705/L uses advanced trench technology to provide excellent R DS ON , low gate charge. A Schottky diode is provided to facilitate the implementation of a


    Original     		PDF AO3705 AO3705/L AO3705 AO3705L -AO3705L OT-23-5 AO3435 ao37

    AON6704L

    Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
    Text: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower


    Original     		PDF O-252) O-263) MSOP-10 SC70-3 SC70-6 SC-89-3 SC-89-6 OD523 OD923 OT23-3 AON6704L AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025

    AO4946

    Abstract: AOZ1242 AO4407A AOZ1242AI AO7408 AO3460 AO4936 AOZ1212AI AOD484 ao4466
    Text: ALPHA & OMEGA SEMICONDUCTOR Selector Guide Q2/Q3 2008 www.aosmd.com Technology. Innovation. Powering the Future. TABLE OF CONTENTS Corporate Overview Mosfets Power ICs Transient Voltage Suppressors TVS Package Types www.aosmd.com PAGE 2 PAGE 3 - 18 PAGE 19 - 22


    Original     		PDF

    MN3211

    Abstract: "hybrid systems" AD371JN DAC350 A037-1 MN3200 AD370KN MN360 MN362
    Text: If' .~ W Complete, LowPower 12-BitD/A Converter ANAL'OG DEVICES AD370/AD371! [ FEATURES Bipolar Voltage Output: A0370 Unipolar Voltage Output: A0371 Low Power: 150mW max Linearity: f:1/2LSB, -55°C to +125°C S Version TTL/CMOS Compatible Compatible with Standard 18-Pin OAC Configurations


    Original     		PDF 12-BitD/A AD370/AD371! AO370/AO371 A0370 A0371 150mW 18-Pin AD370/AD371 12-bit MN3211 "hybrid systems" AD371JN DAC350 A037-1 MN3200 AD370KN MN360 MN362