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    AN1955 RF INTEGRATED CIRCUIT Search Results

    AN1955 RF INTEGRATED CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type Visit Toshiba Electronic Devices & Storage Corporation

    AN1955 RF INTEGRATED CIRCUIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PCN13232

    Abstract: A113 A114 A115 AN1977 AN1987 C101 JESD22 MW6IC2420N MW6IC2420NB
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2420N Rev. 2, 2/2009 RF LDMOS Integrated Power Amplifier The MW6IC2420NB integrated circuit is designed with on - chip matching that makes it usable at 2450 MHz. This multi - stage structure is rated for 26 to


    Original     		PDF MW6IC2420N MW6IC2420NB MW6IC2420NBR1 PCN13232 A113 A114 A115 AN1977 AN1987 C101 JESD22 MW6IC2420N

    MW6IC2420N

    Abstract: AN1955 MW6IC2420NBR1 A113 A114 A115 AN1977 C101 JESD22 MW6IC2420NB
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2420N Rev. 0, 3/2007 RF LDMOS Integrated Power Amplifier The MW6IC2420NB integrated circuit is designed with on - chip matching that makes it usable at 2450 MHz. This multi - stage structure is rated for 26 to


    Original     		PDF MW6IC2420N MW6IC2420NB MW6IC2420NBR1 MW6IC2420N AN1955 MW6IC2420NBR1 A113 A114 A115 AN1977 C101 JESD22

    A113

    Abstract: A114 A115 AN1977 AN1987 C101 JESD22 MW6IC2420N MW6IC2420NB MW6IC2420NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2420N Rev. 1, 4/2008 RF LDMOS Integrated Power Amplifier The MW6IC2420NB integrated circuit is designed with on - chip matching that makes it usable at 2450 MHz. This multi - stage structure is rated for 26 to


    Original     		PDF MW6IC2420N MW6IC2420NB MW6IC2420NBR1 A113 A114 A115 AN1977 AN1987 C101 JESD22 MW6IC2420N MW6IC2420NBR1

    AN1955

    Abstract: potentiometer mttf 3224W-1-502E 81 210 W 20 AN1955 rf integrated circuit ATC100B0R5BT500XT AN1977 AN1987 MW6IC2420N MW6IC2420NB
    Text: Document Number: MW6IC2420N Rev. 2, 2/2009 Freescale Semiconductor Technical Data RF LDMOS Integrated Power Amplifier The MW6IC2420NB integrated circuit is designed with on-chip matching that makes it usable at 2450 MHz. This multi-stage structure is rated for 26 to


    Original     		PDF MW6IC2420N MW6IC2420NB MW6IC2420NBR1 AN1955 potentiometer mttf 3224W-1-502E 81 210 W 20 AN1955 rf integrated circuit ATC100B0R5BT500XT AN1977 AN1987 MW6IC2420N

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data RF LDMOS Integrated Power Amplifier The MW6IC2420NB integrated circuit is designed with on-chip matching that makes it usable at 2450 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical industrial, scientific and medical


    Original     		PDF MW6IC2420NB MW6IC2420NBR1 MW6IC2420N

    ATC100B0R5BT500XT

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data RF LDMOS Integrated Power Amplifier The MW6IC2420NB integrated circuit is designed with on-chip matching that makes it usable at 2450 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical industrial, scientific and medical


    Original     		PDF MW6IC2420N MW6IC2420NB MW6IC2420NBR1 MW6IC2420N ATC100B0R5BT500XT

    ATC600S3R3BT250XT

    Abstract: MW7IC008NT1 Test Circuit Component Layout ATC600S2R MW7IC008NT1 AN1987 3843 GRM3195C1E103JA01 ATC600S2R2CT250XT MW7IC008N A115
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 1, 9/2009 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on - chip matching that makes it usable from 100 to 1000 MHz. This multi - stage


    Original     		PDF MW7IC008N MW7IC008NT1 MW7IC008N ATC600S3R3BT250XT MW7IC008NT1 Test Circuit Component Layout ATC600S2R MW7IC008NT1 AN1987 3843 GRM3195C1E103JA01 ATC600S2R2CT250XT A115

    ATC600S3R3BT250XT

    Abstract: J376 MW7IC008 vgls
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 0, 8/2009 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on - chip matching that makes it usable from 100 to 1000 MHz. This multi - stage


    Original     		PDF MW7IC008N MW7IC008NT1 ATC600S3R3BT250XT J376 MW7IC008 vgls

    MW7IC008N

    Abstract: MW7IC008NT1 AN1955 AN1977 AN1987 0603HC-1N6XJLW L7150 ATC600S3R3BT250XT J3234
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 2, 3/2011 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on-chip matching that makes it usable from 20 to 1000 MHz. This multi-stage


    Original     		PDF MW7IC008N MW7IC008NT1 MW7IC008N MW7IC008NT1 AN1955 AN1977 AN1987 0603HC-1N6XJLW L7150 ATC600S3R3BT250XT J3234

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 2.1, 3/2012 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on-chip matching that makes it usable from 20 to 1000 MHz. This multi-stage


    Original     		PDF MW7IC008N MW7IC008NT1 MW7IC008N

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 3, 12/2013 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on-chip matching that makes it usable from 20 to 1000 MHz. This multi-stage


    Original     		PDF MW7IC008N MW7IC008NT1 MW7IC008N

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MHT2000N Rev. 0, 5/2014 RF LDMOS Integrated Power Amplifiers Wideband integrated circuit is suitable for industrial heating applications operating at 2450 MHz. This multi-stage structure is rated for 26 to 32 V


    Original     		PDF MHT2000N MHT2000NR1 MHT2000GNR1 5/2014Semiconductor,

    ATC600S3R3BT250XT

    Abstract: ON SEMICONDUCTOR J122
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 2.1, 3/2012 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on-chip matching that makes it usable from 20 to 1000 MHz. This multi-stage


    Original     		PDF MW7IC008N MW7IC008NT1 ATC600S3R3BT250XT ON SEMICONDUCTOR J122

    J733

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MD7IC2250N Rev. 0, 12/2010 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2250N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage


    Original     		PDF MD7IC2250N MD7IC2250N MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1 J733

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MD7IC2251N Rev. 0, 5/2012 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2251N wideband integrated circuit is designed with on-chip matching that makes it usable from 2110 - 2170 MHz. This multi - stage


    Original     		PDF MD7IC2251N MD7IC2251N MD7IC2251NR1 MD7IC2251GNR1

    ATC600F4R7BT250XT

    Abstract: ATC600F390JT250XT
    Text: Freescale Semiconductor Technical Data Document Number: MD7IC2251N Rev. 0, 5/2012 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2251N wideband integrated circuit is designed with on-chip matching that makes it usable from 2110 - 2170 MHz. This multi - stage


    Original     		PDF MD7IC2251N MD7IC2251NR1 MD7IC2251GNR1 ATC600F4R7BT250XT ATC600F390JT250XT

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MW4IC915N Rev. 8, 3/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915NB/GNB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi-stage


    Original     		PDF MW4IC915N MW4IC915NB/GNB MW4IC915NBR1 MW4IC915GNBR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9080N Rev. 0, 4/2010 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9080N wideband integrated circuit is designed with on-chip matching that makes it usable from 865 to 960 MHz. This multi-stage


    Original     		PDF MWE6IC9080N MWE6IC9080N MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1 MWE6IC9080NR1 MWE6IC9080GNR1

    IS680-280

    Abstract: MWE6IC9080N AN3263 AN1977 AN1987 MWE6IC9080NR1 atc100b6r8
    Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9080N Rev. 0, 4/2010 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9080N wideband integrated circuit is designed with on-chip matching that makes it usable from 865 to 960 MHz. This multi-stage


    Original     		PDF MWE6IC9080N MWE6IC9080N MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1 MWE6IC9080NR1 MWE6IC9080GNR1 IS680-280 AN3263 AN1977 AN1987 atc100b6r8

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MHV5IC1810N Rev. 1, 3/2011 RF LDMOS Wideband Integrated Power Amplifier MHV5IC1810NR2 The MHV5IC1810N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 1990 MHz. This multi-stage


    Original     		PDF MHV5IC1810N MHV5IC1810NR2 MHV5IC1810N

    AN1955

    Abstract: AN1987 MHV5IC1810NR2 J9-33 336 Z11 J1165
    Text: Freescale Semiconductor Technical Data Document Number: MHV5IC1810N Rev. 1, 3/2011 RF LDMOS Wideband Integrated Power Amplifier The MHV5IC1810N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 1990 MHz. This multi-stage


    Original     		PDF MHV5IC1810N MHV5IC1810N MHV5IC1810NR2 AN1955 AN1987 MHV5IC1810NR2 J9-33 336 Z11 J1165

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MD7IC18120N Rev. 0, 5/2010 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC18120N/GN wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 1880 MHz. This multi-stage


    Original     		PDF MD7IC18120N MD7IC18120N/GN MD7IC18120NR1 MD7IC18120GNR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MDE6IC7120N Rev. 0, 10/2009 RF LDMOS Wideband Integrated Power Amplifiers The MDE6IC7120N/GN wideband integrated circuit is designed with on - chip matching that makes it usable from 728 to 768 MHz. This multi - stage


    Original     		PDF MDE6IC7120N MDE6IC7120N/GN 35employees, MDE6IC7120NR1 MDE6IC7120GNR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MDE6IC9120N Rev. 0, 11/2009 RF LDMOS Wideband Integrated Power Amplifiers The MDE6IC9120N/GN wideband integrated circuit is designed with on - chip matching that makes it usable from 920 to 960 MHz. This multi - stage


    Original     		PDF MDE6IC9120N MDE6IC9120N/GN 32employees, MDE6IC9120NR1 MDE6IC9120GNR1