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    AN-940 NATIONAL Search Results

    AN-940 NATIONAL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54HC221AJ/883C Rochester Electronics Replacement for National Semiconductor part number MM54HC221AJ/883C. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics Buy
    9015DM/B Rochester Electronics LLC Replacement for National Semiconductor part number 9015DMQB. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    LMX2305WG/B Rochester Electronics LLC Replacement for National Semiconductor part number LMX2305WG. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    DM54173J/B Rochester Electronics LLC Replacement for National Semiconductor part number DM54173J/883. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    54161DM/B Rochester Electronics LLC Replacement for National Semiconductor part number 54161DMQB. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy

    AN-940 NATIONAL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CECC00802

    Abstract: J-STD-020B VSML3710 VSML3710-GS08
    Text: VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm RoHS Compliant, Released for Lead Pb -free Solder Process Description VSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PLCC-2 SMD package, released for Lead (Pb)-free Reflow Soldering.


    Original     		PDF VSML3710 VSML3710 J-STD-020 VEMT3700 2002/95/ECed 08-Apr-05 CECC00802 J-STD-020B VSML3710-GS08

    P0846SNL

    Abstract: code l48 LM267X P0841SNL P0849NL P0849SNL 5309130 P0848NL
    Text: THT/SMT POWER INDUCTORS Toroid - Designed for National’s 260kHz Simple Switcher Tested and recommended by National Semiconductor for the LM267X series Base material meets flammability requirements of UL 94V-0 Available in surface mount and through hole versions


    Original     		PDF 260kHz LM267X P0841NL P0845NL P0846NL P0847NL P0848NL P0849NL P0850NL P0841SNL P0846SNL code l48 P0841SNL P0849NL P0849SNL 5309130 P0848NL

    Untitled

    Abstract: No abstract text available
    Text: THT/SMT POWER INDUCTORS Toroid - Designed for National’s 260kHz Simple Switcher Tested and recommended by National Semiconductor for the LM267X series Base material meets flammability requirements of UL 94V-0 Available in surface mount and through hole versions


    Original     		PDF 260kHz LM267X P0841NL P0845NL P0846NL P0847NL P0848NL P0849NL P0850NL P0841SNL

    PE-53818Snl

    Abstract: PE-53829NL PE-54041NL PE-54039 pe-54040snl PE-54037NL pe-53818nl PE-54043NL KM10 equivalent PE-53831SNL
    Text: THT/SMT POWER INDUCTORS Toroid - Designed for National’s 150kHz Simple Switcher Tested and recommended by National Semiconductor Base material meets flammability requirements of UL 94V-0 Available in surface mount and through hole versions Electrical Specifications @ 25°C— Operating Temperature -40° to +130° C 7


    Original     		PDF 150kHz PE-53801NL PE-53802NL PE-53803NL PE-53804NL PE-53805NL PE-53806NL PE-53807NL PE-53808NL PE-53809NL PE-53818Snl PE-53829NL PE-54041NL PE-54039 pe-54040snl PE-54037NL pe-53818nl PE-54043NL KM10 equivalent PE-53831SNL

    PE-53934NL

    Abstract: pe-54040snl PE-54043NL pe-53831snl PE-53818Snl PE-53935NL pe-53829snl 5309130 PE-53824SNL 53932nl
    Text: THT/SMT POWER INDUCTORS Toroid - Designed for National’s 150kHz Simple Switcher Tested and recommended by National Semiconductor Base material meets flammability requirements of UL 94V-0 Available in surface mount and through hole versions Electrical Specifications @ 25°C— Operating Temperature -40° to +130° C 7


    Original     		PDF 150kHz PE-53801NL PE-53802NL PE-53803NL PE-53804NL PE-53805NL PE-53806NL PE-53807NL PE-53808NL PE-53809NL PE-53934NL pe-54040snl PE-54043NL pe-53831snl PE-53818Snl PE-53935NL pe-53829snl 5309130 PE-53824SNL 53932nl

    23N50

    Abstract: No abstract text available
    Text: BLF6G10L-260PRN; BLF6G10LS-260PRN Power LDMOS transistor Rev. 1 — 12 August 2010 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10L-260PRN; BLF6G10LS-260PRN BLF6G10L-260PRN LS-260PRN 23N50

    8140 SOURIAU

    Abstract: BLF6G10LS BLF6G10LS-260 1800 ldmos 800B 8140115
    Text: BLF6G10L-260PRN; BLF6G10LS-260PRN Power LDMOS transistor Rev. 1 — 12 August 2010 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10L-260PRN; BLF6G10LS-260PRN BLF6G10L-260PRN LS-260PRN 8140 SOURIAU BLF6G10LS BLF6G10LS-260 1800 ldmos 800B 8140115

    infrared remote control ON/OFF switch application

    Abstract: RF remote control circuit diagram RF based remote control trw RF POWER TRANSISTOR 4 channel long range RF based remote control diagram remote control receiver and transmitter SMD codes databook light dependent resistor "universal remote control" chip circuit diagram of very long range remote control
    Text: HSDL-3002 IrDA Data Compliant Low Power 115.2 kbit/s with Remote Control Transmission Infrared Transceiver Data Sheet Description The HSDL-3002 is a small form factor single enhanced infrared IR transceiver module that provides the combination of (1) interface between logic and IR


    Original     		PDF HSDL-3002 HSDL-3002 infrared remote control ON/OFF switch application RF remote control circuit diagram RF based remote control trw RF POWER TRANSISTOR 4 channel long range RF based remote control diagram remote control receiver and transmitter SMD codes databook light dependent resistor "universal remote control" chip circuit diagram of very long range remote control

    lexan 940

    Abstract: diagram remote control receiver and transmitter lexan 920A RF based remote control APPLICATION RF remote control circuit diagram "universal remote control" chip infrared remote control ON/OFF switch application RF based remote control BSH103 FDC37C669
    Text: HSDL-3002 IrDA Data Compliant Low Power 115.2 kbit/s with Remote Control Transmission Infrared Transceiver Data Sheet Description Features The HSDL-3002 is a small form factor single enhanced infrared IR transceiver module that provides the combination of (1) interface between logic and IR


    Original     		PDF HSDL-3002 HSDL-3002 5988-7424EN 5988-4165EN lexan 940 diagram remote control receiver and transmitter lexan 920A RF based remote control APPLICATION RF remote control circuit diagram "universal remote control" chip infrared remote control ON/OFF switch application RF based remote control BSH103 FDC37C669

    lexan transparent

    Abstract: No abstract text available
    Text: Agilent HSDL-3002 IrDA Data Compliant Low Power 115.2 kbit/s with Remote Control Transmission Infrared Transceiver Data Sheet Description The HSDL-3002 is a small form factor single enhanced infrared IR transceiver module that provides the combination of (1) interface


    Original     		PDF HSDL-3002 825-class 5988-7424EN 5989-4165EN lexan transparent

    3002

    Abstract: BSH103 FDC37C669 FDC37N769 HSDL-3002 HSDL-3002-007 HSDL3602 HSDL-3602 PC87109 2 pin ir led receiver 455
    Text: Agilent HSDL-3002 IrDA Data Compliant Low Power 115.2 kbit/s with Remote Control Transmission Infrared Transceiver Data Sheet Description The HSDL-3002 is a small form factor single enhanced infrared IR transceiver module that provides the combination of (1) interface


    Original     		PDF HSDL-3002 HSDL-3002 5988-7424EN 3002 BSH103 FDC37C669 FDC37N769 HSDL-3002-007 HSDL3602 HSDL-3602 PC87109 2 pin ir led receiver 455

    Untitled

    Abstract: No abstract text available
    Text: BLM6G10-30; BLM6G10-30G W-CDMA 860 MHz - 960 MHz power MMIC Rev. 2 — 1 March 2011 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 860 MHz to 960 MHz. Available in Gull Wing for surface mount SOT822-1 or flat lead


    Original     		PDF BLM6G10-30; BLM6G10-30G OT822-1) OT834-1) BLM6G10-30

    c102 TRANSISTOR

    Abstract: LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217 PTFA220041M
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency


    Original     		PDF PTFA220041M PTFA220041M PG-SON-10 c102 TRANSISTOR LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217

    BLMG1

    Abstract: mmic e3 4350B HSOP16 BLM6G10-30G
    Text: BLM6G10-30; BLM6G10-30G W-CDMA 860 MHz - 960 MHz power MMIC Rev. 2 — 1 March 2011 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 860 MHz to 960 MHz. Available in Gull Wing for surface mount SOT822-1 or flat lead


    Original     		PDF BLM6G10-30; BLM6G10-30G OT822-1) OT834-1) BLM6G10-30 BLMG1 mmic e3 4350B HSOP16 BLM6G10-30G

    Untitled

    Abstract: No abstract text available
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power ampliier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,


    Original     		PDF PTFA220041M PTFA220041M PG-SON-10

    SMD r801

    Abstract: TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,


    Original     		PDF PTFA220041M PTFA220041M SMD r801 TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223

    c102 TRANSISTOR

    Abstract: tl113 c103 TRANSISTOR TRANSISTOR c104 NFM18PS105R0J3 c103 TRANSISTOR equivalent c104 TRANSISTOR PTFA220041M TL108 tl111
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency


    Original     		PDF PTFA220041M PTFA220041M c102 TRANSISTOR tl113 c103 TRANSISTOR TRANSISTOR c104 NFM18PS105R0J3 c103 TRANSISTOR equivalent c104 TRANSISTOR TL108 tl111

    b25353

    Abstract: B25355 B25650 metallschicht
    Text: Designing the Future Unser Haus entwickelt und fertigt für die Leistungselektronik ein breites Spektrum hochmoderner Gleich- und Wechselspannungskondensatoren. Damit sind wir Marktführer in Europa und weltweit ein Anbieter, der sich auch in Schlüsselmärkten wie USA und Japan einen guten Namen


    Original     		PDF

    617PS-40369

    Abstract: No abstract text available
    Text: AN11299 BGA301x - 40 MHz to 1006 MHz push-pull application Rev. 2 — 21 August 2013 Application note Document information Info Content Keywords BGA3012, BGA3015, BGA3018, evaluation board, CATV, drop amplifier, push-pull, wideband Abstract This application note describes the schematic and layout requirements


    Original     		PDF AN11299 BGA301x BGA3012, BGA3015, BGA3018, 617PS-40369

    Leader 8020 schematics Oscilloscope

    Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
    Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book infrared emitters and detectors vishay semiconductors vse-db0103-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vse-db0103-0810 Leader 8020 schematics Oscilloscope smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s

    xc 250

    Abstract: XC-55-P XC-01 XC-02 XC-06 XC-1209 XC-55-F XC-940 XC-941 XC-944
    Text: HIGH OUTPUT 940 nm INFRARED EMITTERS HIGH OUTPUT 697 nm VISIBLE EMITTERS Plastic Infrared Emitters XC-1209 Low Profile Visible Emitter TO-46 Infrared Emitters XC-940 XC-941 XC-55-F Series Plastic Visible Emitters 697 VISIBLE EMITTERS 940 nm HIGH OUTPUT INFRARED EMITTERS


    OCR Scan     		PDF XC-1209 XC-940 XC-941 XC-55-F XC-55-P XC-01 XC-02 XC-06 XC-1209 xc 250 XC-01 XC-02 XC-06 XC-941 XC-944

    XC-55-P

    Abstract: XC-88-30 XC-88P XC-10 XC-1288 XC-880 XC-881 XC-88-50 XC-88F XC-88-F
    Text: t SI SUPER HIGH OUTPUT 880 nm INFRARED EMITTERS Plastic Infrared Emitters TO-46 Infrared Emitters XC-1288 XC-880 XC-881 Low Profile IR TO-46 Header Emitter XC-88-F Series XC-88-P Series 880 nm S U P E R IN F R A R ED E M IT T E R S OPTO ELECTRON IC C H A R A C T E R IS T IC S


    OCR Scan     		PDF XC-1288 XC-880 XC-88-F XC-88-P XC-881 XC-881 XC-10 XC-88F XC-55-P XC-88-30 XC-88P XC-88-50

    npn phototransistor XC500A

    Abstract: IR Phototransistor Detector 880nm NPN Silicon Phototransistor XC-500A npn phototransistor package XC-802W emitter ir 3mm XC-500C XC800W XC-500E
    Text: DETECTORS/ PHOTOTRANSISTORS T1 PACKAGE XC-500 SERIES NPN SILICON PHOTOTRANSISTOR Package B Opto-Electrical Characteristic at 25 Ambient Sym b o l II M in Dark C urrent VCE = 10,H = Om W /cm 2 V BR CEO C o llecto r-B rea k d o w n Voltage lc = 100 n A V (B R )E C O


    OCR Scan     		PDF XC-500 880nm 20mW/cm2 XC-500A XC-500B XC-500C XC-500D XC-500E XC-800W npn phototransistor XC500A IR Phototransistor Detector 880nm NPN Silicon Phototransistor npn phototransistor package XC-802W emitter ir 3mm XC800W

    XC-55-P

    Abstract: XC-88P XC Series XC-10 XC-1288 XC-55-25 XC-55-F XC-88-F XC-88-P XC-880
    Text: INFRARED EMITTERS TYPICAL INSTANTANEOUS POWER OUTPUT VS FORWARD CURRENT 940 nm HIG H OUTPUT RELATIVE POWER OUTPUT NORMALIZED TO 100 mA 880 nm SUPER HIGH OUTPUT I, IN AMPERES ll IN AM PERES TYP INSTANTANEOUS POWER OUTPUT VS FORWARD CURRENT @ 25°C XC-55-25, XC-55-F AND XC-55-P SERIES


    OCR Scan     		PDF XC-55-25, XC-55-F XC-55-P XC-940/XC-941 XC-10, XC-1288 XC-880/XC-881 XC-88P XC Series XC-10 XC-55-25 XC-88-F XC-88-P XC-880