MAAP-015036
Abstract: No abstract text available
Text: MAAP-015036 Power Amplifier, 15 W 8.5 - 10.5 GHz Rev. V1 Features Functional Schematic • 15 W Power Amplifier 42 dBm Saturated Pulsed Output Power 17 dB Large Signal Gain PSAT >40% Power Added Efficiency Dual Sided Bias Architecture
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MAAP-015036
MIL-STD-883
MAAP-015036
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BC142
Abstract: bc142 transistor transistor BC142
Text: BC142 AUDIO AMPLIFIER DESCRIPTION The BC142 is a silicon planar epitaxial NPN transistor in a TO-39 metal case specially intented for use as driver in high power audio amplifier. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value
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BC142
BC142
bc142 transistor
transistor BC142
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Untitled
Abstract: No abstract text available
Text: MAAP-015024 Power Amplifier, 8 W 14.5 - 17.5 GHz Rev. V3 Features • Functional Schematic 8 W Power Amplifier 20 dB Small Signal Gain 39 dBm Saturated Pulsed Output Power Dual Sided Bias Architecture 100% On-wafer DC & RF Power Tested
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MAAP-015024
MIL-STD-833
MAAP-015024
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2N4427
Abstract: BFR98 transistor 2N4427 2n4427-bfr98
Text: 2N4427 BFR98 VHF OSCILLATOR POWER AMPLIFIER DESCRIPTION The 2N4427 and BFR98 are silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. They are designed for VHF class A, B, or C amplifier and oscillator applications. TO-39 INTERNAL SCHEMATIC DIAGRAM
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2N4427
BFR98
2N4427
BFR98
2N4427-BFR98
transistor 2N4427
2n4427-bfr98
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Untitled
Abstract: No abstract text available
Text: MJB44H11T4 Low voltage NPN power transistor Datasheet - production data Features • Low collector-emitter saturation voltage TAB • Fast switching speed Applications • Power amplifier 3 1 • Switching circuits D2PAK Description Figure 1. Internal schematic diagram
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MJB44H11T4
MJB44H11
DocID022716
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FMA3058
Abstract: FMA3058-000-WP capacitor 100nf 0301C Filtronic
Text: FMA3058 Pilot Datasheet v2.5 2-20 GHZ BROADBAND MMIC AMPLIFIER FEATURES: • • • • • • • • FUNCTIONAL SCHEMATIC: 15dB Gain Low Noise Amplifier Single Supply Self Biased +5V @ 90mA 12 dBm P1dB Output Power at 20GHz pHEMT Technology Bias Control
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FMA3058
20GHz
FMA3058
2-20GHz
22-A114.
MIL-STD-1686
MILHDBK-263.
FMA3058-000-WP
capacitor 100nf
0301C
Filtronic
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FMA3058
Abstract: FMA3058-000-WP fma-3058
Text: FMA3058 2-20 GHZ BROADBAND MMIC AMPLIFIER FEATURES: • • • • • • • • Pilot Datasheet v2.5 FUNCTIONAL SCHEMATIC: 15dB Gain Low Noise Amplifier Single Supply Self Biased +5V @ 90mA 12 dBm P1dB Output Power at 20GHz pHEMT Technology Bias Control
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FMA3058
20GHz
FMA3058
2-20GHz
22-A114.
MIL-STD-1686
MILHDBK-263.
FMA3058-000-WP
fma-3058
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Untitled
Abstract: No abstract text available
Text: FMA3058 2-20 GHZ BROADBAND MMIC AMPLIFIER FEATURES: • • • • • • • • Pilot Datasheet v2.4 FUNCTIONAL SCHEMATIC: 15dB Gain Low Noise Amplifier Single Supply Self Biased +5V @ 90mA 12 dBm P1dB Output Power at 20GHz pHEMT Technology Bias Control
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FMA3058
20GHz
FMA3058
2-20GHz
22-A114.
MIL-STD-1686
MILHDBK-263.
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and pin diagram of TIP35C
Abstract: TIP35C transistor data sheet transistor tip35c tip35c equivalent TIP35C equivalents TIP35C-T3P-K TIP35C TIP36C TIP35CL
Text: UNISONIC TECHNOLOGIES CO., LTD TIP35C NPN SILICON TRANSISTOR HIGH POWER TRANSISTORS DESCRIPTION The UTC TIP35C is a NPN Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP36C. INTERNAL SCHEMATIC DIAGRAM
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TIP35C
TIP35C
TIP36C.
TIP35CL
TIP35C-T3P-K
TIP35CL-T3P-K
QW-R214-013
and pin diagram of TIP35C
TIP35C transistor
data sheet transistor tip35c
tip35c equivalent
TIP35C equivalents
TIP35C-T3P-K
TIP36C
TIP35CL
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transistor TIP36C
Abstract: TIP35C equivalents TIP36C TIP35C
Text: UNISONIC TECHNOLOGIES CO., LTD TIP36C PNP SILICON TRANSISTOR HIGH POWER TRANSISTORS DESCRIPTION The UTC TIP36C is a PNP Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP35C INTERNAL SCHEMATIC DIAGRAM
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TIP36C
TIP36C
TIP35C
TIP36CL
TIP36C-T3P-K
TIP36CL-T3P-K
QW-R214-014
transistor TIP36C
TIP35C equivalents
TIP35C
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schematics for a PA amplifier
Abstract: TQM613025 design of multi section directional coupler TQM613026 qualcomm rft
Text: TQM613026 Application Note Application Note for TQM613026 Power Amplifier-Duplexer Product TQM613026 TABLE OF CONTENTS • 1.0 Description • 2.0 Product Block Diagram and Operation • 3.0 Recommended Handset Schematic and Layout Considerations • 3.1 DC Block Recommendations
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TQM613026
TQM613026
schematics for a PA amplifier
TQM613025
design of multi section directional coupler
qualcomm rft
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD TIP35C NPN SILICON TRANSISTOR HIGH POWER TRANSISTORS DESCRIPTION The UTC TIP35C is a NPN Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP36C. INTERNAL SCHEMATIC DIAGRAM
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TIP35C
TIP35C
TIP36C.
TIP35CL-x-T3P-T
TIP35CG-x-T3P-T
QW-R214-013,
QW-R214-013
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2N6668
Abstract: No abstract text available
Text: 2N6668 SILICON PNP POWER DARLINGTON TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS: GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE SWITCHING AND AMPLIFIER ■ 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM
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2N6668
O-220
2N6668
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2N3114
Abstract: P008B
Text: 2N3114 HIGH VOLTAGE AMPLIFIER DESCRIPTION The 2N3114 is a silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. It is primarily intended for high voltage, medium power applications. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol
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2N3114
2N3114
P008B
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TIP35C
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD TIP35C NPN SILICON TRANSISTOR HIGH POWER TRANSISTORS DESCRIPTION The UTC TIP35C is a NPN Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP36C. INTERNAL SCHEMATIC DIAGRAM
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TIP35C
TIP35C
TIP36C.
TIP35CL-x-T3P-T
TIP35CG-x-T3P-T
TIP35CL-x-T3N-T
TIP35CG-x-T3N-T
QW-R214-013
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD TIP36C PNP SILICON TRANSISTOR HIGH POWER TRANSISTORS DESCRIPTION The UTC TIP36C is a PNP Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP35C. INTERNAL SCHEMATIC DIAGRAM
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TIP36C
TIP36C
TIP35C.
TIP36CL-x-T3P-T
TIP36CL-x-T3N-T
QW-R214-014
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gsm vco
Abstract: bfr93aw schematic gsm 900 amplifier k 3531 transistor
Text: CGY 98 GSM/PCN Dual Band Power Amplifier 1 Schematic of the CGY 98 PA Application 1.1 Application Board V1.2 Application Note No. 053 Two independent amplifier chains are implemented on the dual band amplifier board V1.2. Each one uses a BFP 420 SIEGET transistor for first-stage amplification, and the
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EHT09097
EHT09123
EHT09124
gsm vco
bfr93aw schematic
gsm 900 amplifier
k 3531 transistor
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD TIP36C PNP SILICON TRANSISTOR HIGH POWER TRANSISTORS DESCRIPTION The UTC TIP36C is a PNP Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP35C. INTERNAL SCHEMATIC DIAGRAM
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TIP36C
TIP36C
TIP35C.
TIP36CL-x-T3P-T
TIP36CG-x-T3P-T
QW-R214-014
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BFY50
Abstract: BFY51 bfy51 equivalent BFY50-BFY51 BFY50 equivalent DATASHEET BFY51 BFY52 BFY51I bfy50 cb
Text: BFY50/51 MEDIUM POWER AMPLIFIER DESCRIPTION The BFY50 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS
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BFY50/51
BFY50
BFY52
BFY50
BFY51
BFY51
bfy51 equivalent
BFY50-BFY51
BFY50 equivalent
DATASHEET BFY51
BFY51I
bfy50 cb
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amp_27006.0
Abstract: No abstract text available
Text: Category: Amplifiers CIRCUIT IDEAS FOR DESIGNERS Schematic no. amp_27006.0 Low Voltage Instrumentation Amplifier Description This circuit presents a low voltage instrumentation amplifier operating on +/-1V power supplies. This circuit is designed to amplify low level difference-mode signals over a common mode voltage range that may be
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100K/50K)
500K/100K)
amp_27006.0
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MA08506D
Abstract: No abstract text available
Text: MA08506D 8W Power Amplifier Die 9.5 - 10.5 GHz Advanced Information Features •= •= VDD VDD 38% Typical Power Added Efficiency 50 Ω Input/Output Impedance •= Self-Aligned MSAG MESFET Process RF IN RF OUT VGG Functional Schematic Description Maximum Ratings (T
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MA08506D
MA08506D
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15V 5A Power Supply Schematic
Abstract: 850C TPA02 TPA02A THALER CORPORATION ATPA02
Text: TPA02/ TPA02A Power Operational Amplifier THALER CORPORATION. Represented by: Rhopoint Components Ltd. www.rhopointcomponents.com FEATURES EQUIVALENT SCHEMATIC • COMMON COLLECTOR OUTPUT STAGE · CLOSE TO RAIL OUTPUT – ±1.2V TO RAIL · HIGH SLEW RATE – 20V/µsec.
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TPA02/
TPA02A
600ns
350kHz
TPA02
TPA02A
TPA02/02A
15V 5A Power Supply Schematic
850C
THALER CORPORATION
ATPA02
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IH33
Abstract: 1AP 164 gsm 900 amplifier d 317 transistor
Text: Infineon fechnoiogies CGY 98 GSM/PCN Dual Band Power Amplifier 1 Schematic of the CGY 98 PA Application 1.1 Application Board V1.2 Application Note No. 053 Two independent amplifier chains are implemented on the dual band amplifier board V1.2. Each one uses a BFP 420 SIEGET transistor for first-stage amplification, and the
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OCR Scan
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Untitled
Abstract: No abstract text available
Text: High-Reliability CA3000 Slash-Serles Linear ICs CA3020A/. High-Reliability Multipurpose Wide-Band Power Amplifier The CA3020A Slash / Series types are supplied in the 12lead TO-5 style package. Schematic diagram. TABLE A. POST BURN-IN, FINAL ELECTRICAL AND GROUP A SAMPLING TESTS
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OCR Scan
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CA3000
CA3020A/.
CA3020A
12lead
92LS-2
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