Untitled
Abstract: No abstract text available
Text: RF3930D RF3930D 10W GaN on SiC Power Amplifier Die Package: Die The RF3930D is a 48V, 10W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general
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RF3930D
RF3930D
42dBm
DS130906
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RF Power Amplifier 125KHz
Abstract: RFHA5966AX 4500m 1n4148 die GAAS FET AMPLIFIER x-band 10w RFHA5966A x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm
Text: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features 20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF
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RFHA5966AX
RFHA5966A
4500m
4000m
41dBm
RFHA5966A
1N4148,
RF Power Amplifier 125KHz
1n4148 die
GAAS FET AMPLIFIER x-band 10w
x-Band Hemt Amplifier
95GHZ
10Ghz RF Power 10w amplifier
"15 GHz" power amplifier 41dBm
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MMIC X-band amplifier
Abstract: No abstract text available
Text: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features 20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF
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RFHA5966A
RFHA5966AX
41dBm
RFHA5966A
Radar023
1N4148,
DS111023
MMIC X-band amplifier
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY RFHA3832 RFHA3832 10W GaN Wide-Band Power Amplifier The RFHA3832 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density
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RFHA3832
RFHA3832
DS131205
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Amplifier 10W bluetooth
Abstract: DS1304 RFMD HEMT GaN SiC Gan hemt transistor RFMD ejector RF3930d 3930D SiC diode die
Text: RF3930D 10W GaN on SiC Power Amplifier Die Package: Die Features • Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain = 19dB at 2GHz 48V Typical Performance Output Power: 16W at P3dB Drain Efficiency: 70% at P3dB
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RF3930D
RF3930D
DS130412
Amplifier 10W bluetooth
DS1304
RFMD HEMT GaN SiC
Gan hemt transistor RFMD
ejector
3930D
SiC diode die
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Untitled
Abstract: No abstract text available
Text: RF3930D 10W GaN ON SIC POWER AMPLIFIER DIE Package: Die Features Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=19dB at 2GHz 48V Typical Performance RF IN VGQ Pin 1 CUT RF OUT VDQ Pin 2 • Output Power: 16W at P3dB
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RF3930D
DS110406
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RF3930D
Abstract: RF3930
Text: RF3930D 10W GaN ON SIC POWER AMPLIFIER DIE Package: Die Features Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=19dB at 2GHz 48V Typical Performance RF IN VGQ Pin 1 CUT RF OUT VDQ Pin 2 • Output Power: 16W at P3dB
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RF3930D
RF3930D
DS110406
RF3930
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12w sot23
Abstract: equivalent ic st3232 mini audio amplifier 2w TSSOP16 ST2378E TS4984 TS4990 TS4994 TSM108 li-ion ic prot
Text: Data communication Digital Part number Dx/Rx Description ICC mA ST3222E ST3232 ST3232E ST3237 ST3237E ST3241E ST3243E STLVDS050 STLVDS051 STLVDS104 STLVDS105 STLVDS31 STLVDS32 STLVDS3486 STLVDS3487 STLVDS47 ST2551E* ST2378E ST3378E* 2/2 2/2 2/2 5/3 5/3 3/5
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ST3222E
ST3232
ST3232E
ST3237
ST3237E
ST3241E
ST3243E
STLVDS050
STLVDS051
STLVDS104
12w sot23
equivalent ic st3232
mini audio amplifier 2w
TSSOP16
ST2378E
TS4984
TS4990
TS4994
TSM108
li-ion ic prot
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mosfet d408
Abstract: transistor d407 TRANSISTOR D405 mosfet D403 transistor tp122 D408 mosfet tp122 transistor D408 transistor D303-1 TRANSISTOR D400
Text: 3-Phase AC/BLDC High Voltage Power Stage Board Users Guide 3PHACBLDCHVPSUG Rev. 1 01/2007 freescale.com 3-Phase AC/BLDC High-Voltage, Power-Stage Board Users Guide by: Petr Frgal Freescale Semiconductor Czech System Center To provide the most up-to-date information, the revision of our documents on the World Wide Web will be
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MRF947T1 equivalent
Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi
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2SA1977
2SA1978
2SC2351
2SC3355
2SC3357
2SC3545
2SC3583
2SC3585
2SC4093
2SC4094
MRF947T1 equivalent
MRF947T1 equivalent transistor
NJ1006
BFP320
fll120mk
FLL101ME
MGF4919G
fujitsu gaas fet fhx76lp
HPMA-2086
MMBR521L
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UMK105BJ102KV-F
Abstract: RFMD PA LTE 258-G RFPA2089 LL1608-FSL10NJ lte transceiver
Text: RFPA2089 RFPA2089 InGaP HBT Power Amplifier 0.25W, 50MHz to 2700MHz InGaP HBT POWER AMPLIFIER 0.25W, 50MHz to 2700MHz Package: SOT-89 GND 4 Features -60dBc ACPR at 13dBm WCDMA 0.25W Output Power P1dB Excellent Linearity to DC Power Ratio
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RFPA2089
50MHz
2700MHz
RFPA2089
OT-89
-60dBc
13dBm
65GHz
UMK105BJ102KV-F
RFMD PA LTE
258-G
LL1608-FSL10NJ
lte transceiver
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Untitled
Abstract: No abstract text available
Text: RFPA2089 RFPA2089 InGaP HBT Power Amplifier 0.25W, 50MHz to 2700MHz InGaP HBT POWER AMPLIFIER 0.25W, 50MHz to 2700MHz Package: SOT-89 GND 4 Features -60dBc ACPR at 13dBm WCDMA 0.25W Output Power P1dB Excellent Linearity to DC Power Ratio
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RFPA2089
50MHz
2700MHz
OT-89
-60dBc
13dBm
65GHz
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860mhz rf amplifier circuit diagram
Abstract: UMTS gsm RFMD PA LTE
Text: RFPA2089 RFPA2089 InGaP HBT Power Amplifier 0.25W, 50MHz to 2700MHz InGaP HBT POWER AMPLIFIER 0.25W, 50MHz to 2700MHz Package: SOT-89 GND 4 Features -60dBc ACPR at 13dBm WCDMA 0.25W Output Power P1dB Excellent Linearity to DC Power Ratio High Gain: 17.5dB at 2.65GHz
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RFPA2089
50MHz
2700MHz
RFPA2089
OT-89
-60dBc
13dBm
65GHz
860mhz rf amplifier circuit diagram
UMTS gsm
RFMD PA LTE
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RFPA2089
Abstract: RFMD PA LTE
Text: RFPA2089 RFPA2089 InGaP HBT Power Amplifier 0.25W, 50MHz to 2700MHz InGaP HBT POWER AMPLIFIER 0.25W, 50MHz to 2700MHz Package: SOT-89 GND 4 Features -60dBc ACPR at 13dBm WCDMA 0.25W Output Power P1dB Excellent Linearity to DC Power Ratio
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RFPA2089
50MHz
2700MHz
RFPA2089
OT-89
-60dBc
13dBm
65GHz
RFMD PA LTE
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Untitled
Abstract: No abstract text available
Text: RFPA1012 RFPA1012 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package Style: DFN, 8-Pin, 2mm x 2mm Features High Linearity: OIP3 = 44dBm at 900MHz Low Noise: NF = 3.5dB at 900MHz Low DC Power: 5V, 90mA
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RFPA1012
400MHz
2700MHz
44dBm
900MHz
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WiFi transceiver
Abstract: 860mhz rf amplifier circuit diagram LQP15MN6N2B02D ERJ2RKF1000X 500R07S2R4
Text: RFPA1012 RFPA1012 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz to 2700MHz Power Amplifier Package Style: DFN, 8-Pin, 2mm x 2mm Features 1 8 VBIAS Low Noise: NF = 3.5dB at 900MHz RFIN 2 7 RFOUT/VCC Low DC Power: 5V, 90mA NC 3 400MHz to 2700MHz Operation
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RFPA1012
400MHz
2700MHz
RFPA1012
44dBm
900MHz
WiFi transceiver
860mhz rf amplifier circuit diagram
LQP15MN6N2B02D
ERJ2RKF1000X
500R07S2R4
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860mhz rf amplifier circuit diagram
Abstract: wifi transceiver ERJ2RKF1000X lot date code panasonic ERJ lot date code panasonic Merix LQP15MN6N2B02D ERJ2GEJ202 GRM155R71H102KA01E RFPA1012
Text: RFPA1012 RFPA1012 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package Style: DFN, 8-Pin, 2mm x 2mm Features 1 8 VBIAS Low Noise: NF = 3.5dB at 900MHz RFIN 2 7 RFOUT/VCC Low DC Power: 5V, 90mA NC 3 400MHz to 2700MHz Operation
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RFPA1012
400MHz
2700MHz
RFPA1012
44dBm
900MHz
860mhz rf amplifier circuit diagram
wifi transceiver
ERJ2RKF1000X
lot date code panasonic ERJ
lot date code panasonic
Merix
LQP15MN6N2B02D
ERJ2GEJ202
GRM155R71H102KA01E
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coilcraft 0805LS-102XJLC
Abstract: ERJ-3GEY0R00V ERJ3GEYJ122V RFCA8818PCK-410 MW-846-C-DD-75 grm188r61a105ka61d
Text: RFCA8818 RFCA8818 Dual CATV 40MHz to 1008MHz High Linearity, Low Noise GaAs Amplifier Dual CATV 40MHz to 1008MHz High Linearity, Low Noise GaAs Amplifier Package: Thermally Enhanced SOIC-8 Features 75 Push-Pull Amplifier 40MHz to 1008MHz Operation
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RFCA8818
40MHz
1008MHz
RFCA8818
coilcraft 0805LS-102XJLC
ERJ-3GEY0R00V
ERJ3GEYJ122V
RFCA8818PCK-410
MW-846-C-DD-75
grm188r61a105ka61d
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RFCA8818PCK-410
Abstract: MW-846-C-DD-75
Text: RFCA8818 RFCA8818 Dual CATV 40MHz to 1008MHz High Linearity, Low Noise GaAs Amplifier Dual CATV 40MHz to 1008MHz High Linearity, Low Noise GaAs Amplifier Package: Thermally Enhanced SOIC-8 Features 75 Push-Pull Amplifier 40MHz to 1008MHz Operation
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RFCA8818
40MHz
1008MHz
RFCA8818
RFCA8818PCK-410
MW-846-C-DD-75
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Untitled
Abstract: No abstract text available
Text: IS31AP2110 20W STEREO CLASS-D AUDIO AMPLIFIER WITH POWER LIMIT AND DYNAMIC TEMPERATURE CONTROL September 2014 GENERAL DESCRIPTION FEATURES The IS31AP2110 is a high efficiency stereo Class-D audio amplifier with adjustable power limit function and dynamic temperature control. The loudspeaker driver
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IS31AP2110
IS31AP2110
eTSSOP-28
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Untitled
Abstract: No abstract text available
Text: IS31AP2110 20W STEREO CLASS-D AUDIO AMPLIFIER WITH POWER LIMIT AND DYNAMIC TEMPERATURE CONTROL Advanced Information May 2014 GENERAL DESCRIPTION FEATURES The IS31AP2110 is a high efficiency stereo class-D audio amplifier with adjustable power limit function and
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IS31AP2110
IS31AP2110
eTSSOP-28
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class d power amplifier schematic
Abstract: class d amplifier schematic zobel class g power amplifier schematic class d amplifier amplifier 5w CLASS D 5W LM4675 LM48310 LM48510
Text: Class D Amplifier FAQ By John Guy Applications Engineer National Semiconductor Corp. Purpose of this FAQ This FAQ is intended to capture a variety of knowledge about the selection, application, and measurement of Class D amplifiers. The emphasis of this FAQ is towards Class D
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com/howto/212000761
class d power amplifier schematic
class d amplifier schematic
zobel
class g power amplifier schematic
class d amplifier
amplifier 5w
CLASS D 5W
LM4675
LM48310
LM48510
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ecg msp430
Abstract: I/ecg simulator circuit
Text: ADS1x9xECG-FE Demonstration Kit User's Guide Literature Number: SLAU384A December 2011 – Revised April 2012 Contents . 5 . 5
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SLAU384A
ecg msp430
I/ecg simulator circuit
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fujitsu XTB71
Abstract: XTB71 Maxim MAX8774 G2998F11U xtb71 fujitsu Marvell 88E1116 TRANSISTOR SMD K23 Alcor Micro au6371 NEC lcd inverter schematic 88E1116
Text: 5 4 3 2 1 First International Computer,Inc D D Portable Computer Group HW Department Board name : MotherBoard Schematic C Project : AMD S1 + Nvidia C51D + MCP51 Version : 0.2 XTB71 C Initial Date : 12/13/2006 Confidential B B Manager Sign by : Avery Lee Drawing by
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MCP51
XTB71)
XTB71
C166B9-12204-L
22pin
fujitsu XTB71
XTB71
Maxim MAX8774
G2998F11U
xtb71 fujitsu
Marvell 88E1116
TRANSISTOR SMD K23
Alcor Micro au6371
NEC lcd inverter schematic
88E1116
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