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    AMI EQUIVALENT GATES OF EACH CORE CELL Search Results

    AMI EQUIVALENT GATES OF EACH CORE CELL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    AMI EQUIVALENT GATES OF EACH CORE CELL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    m6845

    Abstract: NA51 transistor AMI 52 732 V DL651 M82530 MXI21 dl541 DF421 DF101 grid tie inverter schematics
    Text: “The new 0.6µm gate array and standard cell families from AMI provide outstanding quality and selection . . . setting performance standards in 0.6µm ASIC products . . . ” • 130 ps gate delays fanout = 2, interconnect length = 0mm ■ Double and Triple Metal Interconnect; up to 900,000 gate


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    PDF Table128, m6845 NA51 transistor AMI 52 732 V DL651 M82530 MXI21 dl541 DF421 DF101 grid tie inverter schematics

    NA21 transistor

    Abstract: kt 825 equivalent DF101 NA21 MGMC51 DL651 NA51 transistor power transistor na51 ami equivalent gates ami equivalent gates of each core cell
    Text: “The new 0.8µm Standard Cell family from AMI delivers superior performance and flexibility . . . one of the lowest cost and highest performance 0.8µm standard cell ASIC products available today . . .” • Designed for 3V, 5V, or 3V/5V mixed supplies


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    TTL 740 NAND propagation delay

    Abstract: NA51 equivalent transistor AMI8G65 OB83 G392 IB09X1 MG82C54 MICROCONTROLLER-8051 NA21 na52 transistor
    Text: "AMI’s 0.8µm Gate Array family is simply the best 0.8µm on the market . . . one of the highest performance, yet lowest cost array products available today . . ." • Designed for 3V, 5V, or 3V/5V mixed supplies ■ 210 ps gate delays fanout = 2 ■ 5,000 to 663,000 available gate densities


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    rda 5807 sp

    Abstract: rda 5807 rda 5807 sp fm receiver ic Elcom vhdl code M8490 IC TDA 2208 NA51 transistor datasheet nsm 3914 am 2901 verilog na44
    Text:  0LFURQ &026 *DWH $UUD\ 'DWD %RRN $0,/*  9ROW Copyright  1999 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the


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    tda 8210

    Abstract: rtl 8112 NA51 transistor datasheet 8085 microprocessor simulator NA52 transistor datasheet AMI MG82C54 NA51 transistor data sheet 8 BIT ALU design with verilog/vhdl code na2x tda 4020
    Text:  0LFURQ &026 *DWH $UUD\ 'DWD %RRN $0,+*  9ROW Copyright  1999 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the


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    PQFP240

    Abstract: XP560E-FBGA484 XCV200E-PQ240 xcv2000e-bg560 XCV100E-FG256 XCV100Efg256 PQFP208 XILINX XCV600E-BG432 XP704E-PBGA676 XCV400E-PQ240
    Text: XPressArray 0.18µ Hybrid Gate Array 1.0 Key Features • Supports LVTTL, LVCMOS, PCI, PCI-X, AGP-2X, HSTL, SSTL, GTL/+, LVPECL, LVDS, BLVDS • 1.8V, 2.5V and 3.3V capable I/O • True 3.3V and 5V tolerance with no external resistor necessary • Up to 832 user I/Os


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    PDF 240K-PQFP208 XP220E-FBGA324 XP164E-FBGA144 XP164E-LQFP144 XP220E-PQFP208 XP220E-PQFP240 XP270E-FBGA324 XP270E-PBGA356 PQFP240 XP560E-FBGA484 XCV200E-PQ240 xcv2000e-bg560 XCV100E-FG256 XCV100Efg256 PQFP208 XILINX XCV600E-BG432 XP704E-PBGA676 XCV400E-PQ240

    XP170E

    Abstract: XP220E XP272E XP378E XP444E XP568E XP708E XP830E 124mA Cell-based ASICs - Reference Library
    Text: XPressArray 0.18µ Hybrid Gate Array 1.0 Key Features • Supports LVTTL, LVCMOS, PCI, PCI-X, HSTL, SSTL, GTL/+, LVPECL, LVDS, BLVDS • 1.5V, 1.8V, 2.5V and 3.3V capable I/O • True 3.3V and 5V tolerance with no external resistor necessary • Up to 830 user I/Os


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    PDF 1-50MHz 200-800MHz 1-800MHz 50-150ps 5-10ps 55-120ps 100-2000ps 100-500ps FOUT90, FOUT180, XP170E XP220E XP272E XP378E XP444E XP568E XP708E XP830E 124mA Cell-based ASICs - Reference Library

    Untitled

    Abstract: No abstract text available
    Text: XPressArray 0.18µ Hybrid Gate Array 1.0 Key Features • Supports LVTTL, LVCMOS, PCI, PCI-X, HSTL, SSTL, GTL/+, LVPECL, LVDS, BLVDS • 1.5V, 1.8V, 2.5V and 3.3V capable I/O • True 3.3V and 5V tolerance with no external resistor necessary • Up to 830 user I/Os


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    PDF 1-50MHz 200-800MHz 1-800MHz 50-150ps 5-10ps 55-120ps 100-2000ps 100-500ps FOUT90, FOUT180,

    0.5um amis cmos

    Abstract: AMI500XXXX rom 512x4 AMI500HXSC FPGA 144 CPGA 172 PLCC ASIC 135C AMI500MXSC AMI500SXSC DF101 NA21
    Text: 0.5 Micron CMOS Standard Cell Data Book AMI500XXXX 5.0 Volt Revision 1.1 Copyright  2002 AMI Semiconductor, Inc. AMIS . All rights reserved. Trademarks registered. Information furnished by AMIS in this publication is believed to be accurate. Devices sold by AMIS are covered by the


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    PDF AMI500XXXX 0.5um amis cmos AMI500XXXX rom 512x4 AMI500HXSC FPGA 144 CPGA 172 PLCC ASIC 135C AMI500MXSC AMI500SXSC DF101 NA21

    Untitled

    Abstract: No abstract text available
    Text: XPressArray 0.18µm Structured ASIC Datasheet 1.0 Key Features • Supports LVTTL, LVCMOS, PCI, PCI-X, HSTL, SSTL, GTL/+, LVPECL, LVDS, BLVDS • 1.5V, 1.8V, 2.5V and 3.3V capable I/O • True 3.3V tolerance with no external resistor necessary • Up to 830 user I/Os


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    PDF 40MHz 200-800MHz 1-800MHz 50-150ps 5-10ps 55-120ps 100-2000ps 100-500ps FOUT90, FOUT180,

    0.5um amis cmos

    Abstract: AMI350LXSC AMI350XXXX DF101 NA21 NA22 135C AMI350HXSC AMI350MXSC micron lable information
    Text: 0.35 Micron CMOS Standard Cell Data Book AMI350XXXX 3.3 Volt Revision 1.1 Copyright  2002 AMI Semiconductor, Inc. AMIS . All rights reserved. Trademarks registered. Information furnished by AMIS in this publication is believed to be accurate. Devices sold by AMIS are covered by the


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    PDF AMI350XXXX 0.5um amis cmos AMI350LXSC AMI350XXXX DF101 NA21 NA22 135C AMI350HXSC AMI350MXSC micron lable information

    8085 mini projects

    Abstract: full subtractor circuit using decoder and nand ga DF102 ic tda 2030 8085 mini projects with low budget AMI 9198 na44 DF422 16 BIT ALU design with verilog/vhdl code AMI 8232
    Text:  0LFURQ &026 6WDQGDUG &HOO 'DWD %RRN $0,/6  9ROW Copyright  1999 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the


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    schematic diagram online UPS

    Abstract: na44 AMI 9198 NA51 MG82C54 32 BIT ALU design with verilog/vhdl code book national semiconductor AMI 8232 AMIS 690 DF411
    Text:  0LFURQ &026 6WDQGDUG &HOO 'DWD %RRN $0,/6  9ROW Copyright  1999 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the


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    NA2X

    Abstract: 16 BIT ALU design with verilog/vhdl code QN-08 1329 vhdl code gold sequence code tda 2030 ic 5 pins AMI 9198 na44 MG82C54 32 BIT ALU design with verilog/vhdl code 8085 memory organization
    Text:  0LFURQ &026 6WDQGDUG &HOO 'DWD %RRN $0,+6  9ROW Copyright  1999 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the


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    XC3S1000-FT256

    Abstract: XC3S1000-FG456 XC2VP30-FF896 XILINX/SPARTAN-3 XC3S200 XC2V3000-BG728 XC2VP4-FG456 XC3S200FT256 XC2V1000-FG456 XC2V3000-FG676 XC2VP20 fg676
    Text: XPressArray-II 0.15mm Structured ASIC Data Sheet 1.0 Key Features • Next-generation 0.15µm structured ASIC • Platform for high-performance 1.5V/1.2V ASICs and FPGA-to-ASIC conversions • NRE and production cost savings • Significant time-to-market advantages


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    PDF 210MHz 500MHz 332kbits 18kbit 330MHz XC3S1000-FT256 XC3S1000-FG456 XC2VP30-FF896 XILINX/SPARTAN-3 XC3S200 XC2V3000-BG728 XC2VP4-FG456 XC3S200FT256 XC2V1000-FG456 XC2V3000-FG676 XC2VP20 fg676

    AMI500XXXX

    Abstract: AMI500HXSC micron lable information 135C AMI500HXPR AMI500HXPS AMI500MXSC AMI500SXSC NA21 NA22
    Text: 0.5 Micron CMOS Standard Cell Data Book AMI500XXXX 5.0 Volt Revision 1.1 Copyright  2002 AMI Semiconductor, Inc. AMIS . All rights reserved. Trademarks registered. Information furnished by AMIS in this publication is believed to be accurate. Devices sold by AMIS are covered by the


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    PDF AMI500XXXX AMI500XXXX AMI500HXSC micron lable information 135C AMI500HXPR AMI500HXPS AMI500MXSC AMI500SXSC NA21 NA22

    resistor 1r-1W

    Abstract: XP444HE XP568HE XP708HE XP830HE XP170HE XP220HE XP272HE XP378HE LVPECL33
    Text: XPressArray High Density 0.18µm Structured ASIC Datasheet 1.0 Key Features • Supports LVTTL, LVCMOS, PCI, PCI-X, HSTL, SSTL, GTL/+, LVPECL, LVDS, BLVDS • 1.5V, 1.8V, 2.5V and 3.3V capable I/O • True 3.3V tolerance with no external resistor necessary


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    PDF g1-50MHz 200-800MHz 1-800MHz 50-150ps 5-10ps 55-120ps 100-2000ps 100-500ps FOUT90, FOUT180, resistor 1r-1W XP444HE XP568HE XP708HE XP830HE XP170HE XP220HE XP272HE XP378HE LVPECL33

    Untitled

    Abstract: No abstract text available
    Text: XPressArray-II 0.15mm Structured ASIC Data Sheet 1.0 Key Features • Next-generation 0.15µm structured ASIC • Platform for high-performance 1.5V/1.2V ASICs and FPGA-to-ASIC conversions • NRE and production cost savings • Significant time-to-market advantages


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    PDF 210MHz 500MHz 332kbits 18kbit 330MHz

    ra1613

    Abstract: FB360 HSTL18 XC2V3000-BG728 XC3S1000-FT256 XC3S200-ft256 X2P376 X2P528 X2P680 BGA 728 35x35 1.27
    Text: XPressArray-II 0.15mm Structured ASIC Data Sheet 1.0 Key Features • Next-generation 0.15mm hybrid structured ASIC • Initializable distributed memory at speeds up to 210MHz • Platform for high-performance 1.5V/1.2V ASICs and FPGAto-ASIC conversions • Configurable signal, core and I/O power supply pin locations


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    PDF 210MHz PCI33, PCI66, ra1613 FB360 HSTL18 XC2V3000-BG728 XC3S1000-FT256 XC3S200-ft256 X2P376 X2P528 X2P680 BGA 728 35x35 1.27

    Untitled

    Abstract: No abstract text available
    Text: XPressArray-II 0.15mm Structured ASIC Data Sheet 1.0 Key Features • Next-generation 0.15mm hybrid structured ASIC • Initializable distributed memory at speeds up to 210MHz • Platform for high-performance 1.5V/1.2V ASICs and FPGAto-ASIC conversions • Configurable signal, core and I/O power supply pin locations


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    PDF 210MHz PCI33, PCI66, X2P680 X2P846

    DL05L

    Abstract: lm 739 dl051d ODCSXE04 180 nm CMOS standard cell library AMI DL021D M91C360 ami 0.6 micron micron37 ami equivalent gates
    Text: Library Characteristics AMI AMERICAN MICROSYSTEMS, INC Description • Cost driven architecture: - Offers both 2 and 3 level metal interconnect to provide the lowest user cost for the number of gates and pads required. - Compiled memory blocks on standard cells are


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    PDF 2Kx32 16Kx32 256x16 R04cwxyz, R06cwxyz 4D55c DL05L lm 739 dl051d ODCSXE04 180 nm CMOS standard cell library AMI DL021D M91C360 ami 0.6 micron micron37 ami equivalent gates

    DIGITAL GATE EMULATOR USING 8085

    Abstract: 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent
    Text: Library Characteristics il A M I AMERICAN MICROSYSTEMS, INC. L ib ra ry Characteristics AMI6G 0.6 micron CMOS Gate Array AMI6Gx Gate Array Family Overview U S A B LE G ATES1 PART NUM B ER2 B O N D PAD S I/O C E L L S 2 LM 3 LM AMI6G4 1.39 1.85 44 52 AMI6G16S


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    PDF AMI6G16S AMI6G33S AMI6G41S AMI6G70S AMI6G106S AMI6G150S AMI6G202S AMI6G333 AMI6G471 AMI6G603 DIGITAL GATE EMULATOR USING 8085 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent

    bb 9790 schematic diagram

    Abstract: DIGITAL GATE EMULATOR USING 8085 TDA 1006 equivalents ami equivalent gates verilog code motor 04S75 M6845 TDB 2915 KM AMI8G34S AMI8G28S
    Text: Libraiy Characteristics AMERICAN MICROSYSTEMS INC. AMI8G 0.8 micron CMOS Gale Array AMI’s “AMI8Gx” series of 0.8|im gate arrays exploits a proprietary power grid and track routing architecture on a compact, channelless, sea-of-gates design to provide one


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    PDF 32-bits. MG65C02, MG29C01, MG29C10, MG80C85, MG82Cxx, MGMC51 Q172SÖ AMI86 DD17SbD bb 9790 schematic diagram DIGITAL GATE EMULATOR USING 8085 TDA 1006 equivalents ami equivalent gates verilog code motor 04S75 M6845 TDB 2915 KM AMI8G34S AMI8G28S

    Untitled

    Abstract: No abstract text available
    Text: GOULD 4055916 GOUL D IN C / GOULD A M I SEMI CONDUCTOR 03 DIV D • 03E MDSSTlb 1 1494 DQ114TM 0^ TABLE OF CONTENTS SECTION 1: DESIGN INFORMATION 1.1 CHOOSING AN ARRAY. 1-5 1.1.1 Determining Gate Count. 1-6


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    PDF DQ114TM