Untitled
Abstract: No abstract text available
Text: CMLDF001 AMERICAN MICROSYSTEMS, INC June, 1998 Preliminary AMI 0.6 micron CMOS AMI 0.6 micron CMOS C6H Differential D Flip Flop Features • limited voltage swing • useful for low noise applications • positive edge triggered VDD Din Dinf Description
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CMLDF001
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Untitled
Abstract: No abstract text available
Text: CMLDTS AMERICAN MICROSYSTEMS, INC June, 1998 Preliminary AMI 0.6 micron CMOS AMI 0.6 micron CMOS C6H Differential to CMOS converter Features • limited voltage swing differential inputs • single-ended CMOS output • low propagation delay VDD in Description
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100Mhz
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high frequency flip flop
Abstract: ami 0.6 micron CMLDF021
Text: CMLDF021 AMERICAN MICROSYSTEMS, INC June, 1998 Preliminary AMI 0.6 micron CMOS AMI 0.6 micron CMOS C6H Differential D Flip Flop with set Features • limited voltage swing • useful for low noise applications • positive edge triggered • asynchronous set input
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CMLDF021
100Mhz,
high frequency flip flop
ami 0.6 micron
CMLDF021
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false
Abstract: Micron NAND high voltage 2 input and digital
Text: CMLNA21 AMERICAN MICROSYSTEMS, INC June, 1998 Preliminary AMI 0.6 micron CMOS AMI 0.6 micron CMOS C6H Differential 2 input NAND Features • limited voltage swing • useful for low noise applications • low propagation delay VDD in1 in1f in2 in2f Description
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CMLNA21
100Mhz
false
Micron NAND
high voltage 2 input and
digital
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0.6 um cmos process
Abstract: No abstract text available
Text: CMLINV1 AMERICAN MICROSYSTEMS, INC June, 1998 Preliminary AMI 0.6 micron CMOS AMI 0.6 micron CMOS C6H Differential inverter Features • limited voltage swing • useful for low noise applications • low propagation delay VDD in Description A high speed, low-power general purpose
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100Mhz
0.6 um cmos process
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AMI AMERICAN
Abstract: No abstract text available
Text: IBCPH3 AMERICAN MICROSYSTEMS, INC June, 1998 Preliminary AMI 0.6 micron CMOS Single Poly Comparator Schematic Symbol Description P-Channel differential input comparator with hysteresis. Digital model is designed for a differential input. . AVDD PADM PD
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m6845
Abstract: NA51 transistor AMI 52 732 V DL651 M82530 MXI21 dl541 DF421 DF101 grid tie inverter schematics
Text: “The new 0.6µm gate array and standard cell families from AMI provide outstanding quality and selection . . . setting performance standards in 0.6µm ASIC products . . . ” • 130 ps gate delays fanout = 2, interconnect length = 0mm ■ Double and Triple Metal Interconnect; up to 900,000 gate
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Table128,
m6845
NA51 transistor
AMI 52 732 V
DL651
M82530
MXI21
dl541
DF421
DF101
grid tie inverter schematics
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Untitled
Abstract: No abstract text available
Text: IBCNH3 AMERICAN MICROSYSTEMS, INC June, 1998 Preliminary AMI 0.6 micron CMOS Single Ploy Comparator Description Schematic Symbol N-Channel differential input comparator with hysteresis. Digital model is designed for a differential input. . AVDD PADM PD
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AMPNDI01
Abstract: No abstract text available
Text: AMPNDI01 AMERICAN MICROSYSTEMS, INC June, 1998 Preliminary AMI 0.6 micron CMOS point. Inputs must be capacitively coupled. Requires a voltage reference. Limiting Amplifier Features • fully differential architecture • wide frequency range • high gain
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AMPNDI01
AMPNDI01
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single CMOS analog comparator
Abstract: CM001IS03
Text: CM001IS03 AMERICAN MICROSYSTEMS, INC June, 1998 Preliminary AMI 0.6 micron CMOS C6H Single Poly Comparator with Hysteresis Description Features Schematic Symbol • • • Simple 2 stage comparator with hysteresis and output stage Nominal 20mV Hysteresis
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CM001IS03
single CMOS analog comparator
CM001IS03
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AMPPDI02
Abstract: No abstract text available
Text: AMPPDI02 AMERICAN MICROSYSTEMS, INC June, 1998 Preliminary AMI 0.6 micron CMOS Variable Gain Amplifier Stage AVDD Features • single stage building block • fully differential architecture • single-ended AGC control • wide frequency response IN+ OUT+
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AMPPDI02
AMPPDI02
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AMERICAN MICROSYSTEMS
Abstract: No abstract text available
Text: IBELVX3 AMERICAN MICROSYSTEMS, INC June, 1998 Preliminary AMI 0.6 micron CMOS Single Poly Comparator Schematic Symbol Description PECL input comparator cell. Receives 3v PECL input levels. Digital model is designed for a differential input. AVDD PADM PD
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Untitled
Abstract: No abstract text available
Text: IBCPX3 AMERICAN MICROSYSTEMS, INC June, 1998 Preliminary AMI 0.6 micron CMOS Single Poly Comparator Schematic Symbol Description P-Channel differential input comparator cell. Digital model is designed for a single ended input. AVDD PADM PD VREF TRUTH TABLE
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AMERICAN MICROSYSTEMS
Abstract: No abstract text available
Text: IBEXX3 AMERICAN MICROSYSTEMS, INC June, 1998 Preliminary AMI 0.6 micron CMOS Single Poly Comparator Schematic Symbol Description PECL input comparator cell. Receives 5v PECL input levels. Digital model is designed for a differential input. AVDD PADM PD
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RSSI
Abstract: AMERICAN MICROSYSTEMS AMPNDI02 full wave rectifier SINGLE PHASE
Text: AMPNDI02 AMERICAN MICROSYSTEMS, INC June, 1998 Preliminary AMI 0.6 micron CMOS Limiting Amplifier with RSSI Features • receive signal strength indication RSSI • wide frequency range • low propagation delay AVSS IN+ VREF IN- OUT+ RSSI OUT- Description
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AMPNDI02
70MHz
RSSI
AMERICAN MICROSYSTEMS
AMPNDI02
full wave rectifier SINGLE PHASE
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AMERICAN MICROSYSTEMS
Abstract: No abstract text available
Text: IBCNX3 AMERICAN MICROSYSTEMS, INC June, 1998 Preliminary AMI 0.6 micron CMOS Single Poly Comparator Schematic Symbol Description N-Channel differential input comparator cell. Digital model is designed for a single ended input. AVDD PADM PD VREF TRUTH TABLE
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Untitled
Abstract: No abstract text available
Text: AMI AMERICAN MICROSYSTEMS, INC. DAC/ADC CA008FD2 +4.5Vto +5.5V 1.5 mA rail-to-rail voltage output 8-Bt 200 KSPS Rash DAC AMI 0.6 micron CMC6 Features General Description • The converter has been realized as a single 8-Bit DAC. • Guaranteed monotonic by design.
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CA008FD2
DAC08R02
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Untitled
Abstract: No abstract text available
Text: AMI ADC16FD2 AMERICAN MICROSYSTEMS, INC. DAC/ADC 5V 16 B t ADC28 KSPS, Resistive Ladder ADO AMI 0.6 micron CMC6 Features General Description • 16 bit parallel output, 16 bits resolution. The ADC16R02 is realized in resistive ladder architecture. The part operates from a single 5V supply. This 16 bit
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ADC16FD2
ADC28
ADC16R02
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successive approximation adc ic
Abstract: No abstract text available
Text: AMI ADC10FD5 A M E R IC A N MICROSYSTEMS, INC. DAC/ADC +4.5VTD+5.5V 10-Bt 84 KSPS Successive Approxi mation ADC AMI 0.6 micron CMC6 Features General Description • The ADC10C05 is a 10 bit successive approximation charge redistribution ADC. The cell has been designed to operate from separate
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ADC10FD5
10-Bt
ADC10C05
ADC10R05
10-bit
successive approximation adc ic
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Untitled
Abstract: No abstract text available
Text: AMI ADC10P03 AMERICAN MICROSYSTEMS, INC. 5y 10-Bt 20 MSPS, Rpline AIX DAC/ADC AMI 0.6 micron CMC6 Features Applications • Maximum range of the input is 2 V p-p • DST Modems • Power consumption 650mW • High-speed data acquisition • Analog operating voltage 4.75V to 5.25V
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ADC10P03
10-Bt
650mW
ADC10P03
10-01MSPS,
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AD-009
Abstract: AD009
Text: AMI AD009FD3 AMERICAN MICROSYSTEMS, INC. 5V 9 B t 60 KSPS, Resistive Ladder ADO DAC/ADC AMI 0.6 micron CMC6 Features General Description • Maximum range of the input is 0.5 to 3.5 volts above analog ground The ADC09R03 is realized as a resistive ladder architecture. The part operates on one single 5V supply.
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AD009FD3
ADC09R03
AD-009
AD009
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Untitled
Abstract: No abstract text available
Text: AMI AD008FD4 AMERICAN MICROSYSTEMS, INC. DAC/ADC +4.5Vto +5.5V 8-Bt 100 MSPS Rash ADC AMI 0.6 micron CMC6 Features General Description • The converter has been realized as a single 8-Bit Flash ADC. The ADC08R04 is a single, 8-bit, fully decoded, flash ADC. The part operates from a single +4.5 V to +5.5 V
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AD008FD4
ADC08R04
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ami06
Abstract: No abstract text available
Text: ADG06RD2 AMERICAN MICROSYSTEMS, INC. +4.5Vto 5.5V 6-Bt 100 MSPS, Rash ADC DAC/ADC AMI 0.6 micron CMC6 Features General Description • Single 6-Bit ADC The AMI06R02 is realized as a 6-bit, high-speed, analog to digital converter fabricated on a 0.6|j process.
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ADG06RD2
100mW
100MSPS
AMI06R02
ADC06R02
ami06
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AMI AMERICAN
Abstract: No abstract text available
Text: •Ami ADC10C01 AMERICAN MICROSYSTEMS, INC AMI 0.6 micron CMOS C6L Double Poly June, 1998 P relim inary Charge Redistribution SAR ADC Features • 10 bit unsigned binary output Description The 10bit successive approxim ation charge redistribution ADC uses 12 clock
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ADC10C01
10bit
AMI AMERICAN
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