Bv 42 transistor
Abstract: No abstract text available
Text: SGS-THOMSON 5 7 , AM81719-040 RF & M ICROW AVE TRANSISTO RS T ELEM ETR Y APPLICATIONS P R E L IM IN A R Y D A T A REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P o u t = 40 W MIN. WITH 7 dB GAIN
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AM81719-040
AM81719-040
Bv 42 transistor
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AM81719-040
Abstract: No abstract text available
Text: AM81719-040 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 40 W MIN. WITH 7 dB GAIN .400 X .400 2 LFL M228
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AM81719-040
AM81719-040
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Untitled
Abstract: No abstract text available
Text: AM81719-040 NPN RF POWER TRANSISTOR PACKAGE STYLE 400 2L FLG E DESCRIPTION: The ASI AM81719-040 is a Common Base Device Designed for Class C, CW communications Applications up to 1.85 GHz. FEATURES INCLUDE: • Input/Output Matching • Gold Metallization
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AM81719-040
AM81719-040
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M147
Abstract: AM81719-030
Text: AM81719-030 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 28 W MIN. WITH 6.7 dB GAIN
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AM81719-030
AM81719-030
M147
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AM81719-030
Abstract: M147
Text: AM81719-030 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 28 W MIN. WITH 6.7 dB GAIN
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AM81719-030
AM81719-030
M147
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LM228
Abstract: AM81719-040 DSA00379325
Text: AM81719-040 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS . . . PRELIMINARY DAT A REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 40 W MIN. WITH 7 dB GAIN .400 X .400 2 LF L M228
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AM81719-040
AM81719-040
LM228
DSA00379325
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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DMO12
Abstract: sung wei AM95C60 dm38 DM16 24 DM20 DM32 DM33 DM35 DM37
Text: Am95C60 Quad Pixel Dataflow Manager PRELIMINARY DISTINCTIVE CHARACTERISTICS Generates mixed text and graphics within Display Mem ory Draws vectors up to 3.3 million pixels per second, or places text at 50,000 characters per second One chip handles four Display Memory planes of any
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Am95C60
DMO12
sung wei
dm38
DM16 24
DM20
DM32
DM33
DM35
DM37
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Untitled
Abstract: No abstract text available
Text: S G S - T H O M S O N A T /. M «glLilgm 5ÜIDIgi_A M 817 1 9 -0 3 0 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS P R E L IM IN A R Y D A T A i REFRACTO RY/G O LD METALLIZATION • EM ITTER SITE BALLASTED . LOW THERMAL RESISTANCE . IN PU T/O U TPU T MATCHING
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AM81719-030
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S042
Abstract: AM81719-030 AM81719-040 AM82022-020 AM82223-001 AM82223-003 AM82223-006 AM82223-010
Text: S IL IC O N P O W E R T R A N S IS T O R S A group of high efficiency, c o m m o n -b ase p ow er d evices have been specifically optim ized for d a ta link and other telem etry applications in th e 1.7 - 2 .4 G H z range. E m itter-ballasted, refractory-gold m etallized die g eom etries are
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AM81719-030
AM81719-040
AM82022-020
AM82223-001
AM82223-003
AM82223-006
S042
AM82223-010
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DM20
Abstract: DM32 DM33 DM35 DM37 DM38
Text: Am95C60 Quad Pixel Dataflow Manager PRELIMINARY DISTINCTIVE CHARACTERISTICS Generates mixed text and graphics within Display Mem ory Draws vectors up to 3.3 million pixels per second, or places text at 50,000 characters per second One chip handles four Display Memory planes of any
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Am95C60
DM20
DM32
DM33
DM35
DM37
DM38
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transistor 5cw
Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000
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CDMA2000
2N6084
BLV102
CA5815CS
D1020UK
LF2810A
MRF175LV
MSC75652
PH1600-7
SD1466
transistor 5cw
transistor 5cw 61
sd1466
transistor 6cw
TRANSISTOR REPLACEMENT GUIDE
6CW transistor
MS3016
transistor selection guide
PH1516-2
STM1645-10
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SO42
Abstract: sd1393 Transistor amplifier SD1393 SD1470 sd1393 01 sd2931 fm SD57045 LT5232 sd1446 SD4100
Text: Selection Guide April 2000 VHF/UHF and 900 MHz Cellular Applications TYPE FREQ. MHz POUT (W) Gain min. (dB) Vcc (V) Class (%) Efficiency (°C/W) RTHj-c PD54003 PD54008 PD55003* PD55008 PD55015 PD57002* PD57006* PD57018 PD57030S PD57045S 520 520 520 520 520
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PD54003
PD54008
PD55003*
PD55008
PD55015
PD57002*
PD57006*
PD57018
PD57030S
PD57045S
SO42
sd1393
Transistor amplifier SD1393
SD1470
sd1393 01
sd2931 fm
SD57045
LT5232
sd1446
SD4100
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DM-313
Abstract: dm2g Am95C60 b
Text: A D V A N C E D ni C R O D E V I C E S fli I •■ 0257525 D Ë J DBS7SES GDSS23D 7 ni ■ ADVANCED M ICRO DEVICE?. 8 9 D 25230 Dyt 3 'O f Am95C60 Quad Pixel Dataflow Manager PRELIMINARY > 3 DISTINCTIVE CHARACTERISTICS Generates mixed text and graphics within Display Memory
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GDSS23D
Am95C60
AIS-B-20M
DM-313
dm2g
Am95C60 b
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7330-9
Abstract: No abstract text available
Text: ADVANCED MICRO DEVICES * D Ë | 0E57555 ODBISTT 7 | ~ 0257525 ADVANCED MICRO DEVICES 76C 21579 A m 8 1 7 1 / A m 8 1 7 2 D T 'r t '3 % '0 ? Video Data Assembly FIFO VDAF ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • • • Supports smooth panning and hardware windows
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Am8171/Am8172
Am8172,
Am8171,
Am8171
7330-9
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON 5 •y Ï . A M 8 1 7 1 9 -0 4 0 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS P R E L IM IN A R Y D A T A ■ ■ » ■ ■ REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE
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AM81719-040
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175185 PIN
Abstract: No abstract text available
Text: SILICON POWER TRANSISTORS TELEMETRY/COMMUNICATIONS TRANSISTORS A group of high efficiency, common-base power devices have been specifically optimized for data link and other telemetry/communications applications in the 1.7 - 2.4 GHz range. Emitter-ballasted, refractory-gold metallized die
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AM81719-030
AM81719-040
AM81720-012
AM82223-010
175185 PIN
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MSC1002
Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition
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28Vdc
MSC1002
AVIA c cube
IC CD 4440 amplifier circuit diagram
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