Untitled
Abstract: No abstract text available
Text: TECHNOLOGY BACKGROUND AMD DL160 and DL320 Series Flash: New Densities, New Features 2 Am29DL16x and Am29DL32x Series: New Densities, New Features Introduction The DL160 series and DL320 series are the newest devices in the family of low power Simultaneous Read/Write Flash devices from AMD. These devices utilize the same
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DL160
DL320
Am29DL16x
Am29DL32x
Am29DL400
Am29DL800
2271A
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AM29LV
Abstract: DL160 AM29DL323
Text: AMD DL160 and DL320 Series Flash: New Densities, New Features Technology Background July 2003 The following document refers to Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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DL160
DL320
2271A
AM29LV
AM29DL323
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DL160
Abstract: No abstract text available
Text: TECHNOLOGY BACKGROUND Back AMD DL160 and DL320 Series Flash: New Densities, New Features 2 Am29DL16x and Am29DL32x Series: New Densities, New Features Introduction The DL160 series and DL320 series are the newest devices in the family of low power Simultaneous Read/Write Flash devices from AMD. These devices utilize the same
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DL160
DL320
Am29DL16x
Am29DL32x
Am29DL400
Am29DL800
2271A
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Untitled
Abstract: No abstract text available
Text: Migration from 16 Megabit to 64 Megabit Flash Memory Devices Application Note This document will assist board-designers in creating a seamless migration path from AMD 16 Mb or 32 Mb low voltage LV flash and Simultaneous Read/Write (DL) devices to higher densities.
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LV320
LV640U
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atmel 8086
Abstract: 49f020 m29F DATASHEET AM29F002 002N AT49 SST39SF010A SST39SF020A SST39SF040 SST39VF020
Text: Designing In SST’s Multi-Purpose Flash 39 Series Byte-wide Products Designing In SST’s Multi-Purpose Flash (39 Series) Byte-wide Products Application Note April 2003 INTRODUCTION This application note introduces the SST 39 series - SST’s mainstream Multi-Purpose Flash (MPF) product line. It
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Am29F
SST39VF080
AT49LV008A-based
S72014-03-000
atmel 8086
49f020
m29F DATASHEET
AM29F002
002N
AT49
SST39SF010A
SST39SF020A
SST39SF040
SST39VF020
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SST39WF160x
Abstract: AM29F SST25VF016B tsop i 12mmx20mm 48-WFBGA SST38VF640x TSOP 28 SPI memory Package flash FLASH CROSS sst39vf040 WFBGA-48 48TSOP
Text: Silicon Storage Technology, Inc. NOR Flash Cross Reference Guide 1.8V, 3V, 5V www.SST.com Comparison Guide Spansion Company Density Spansion SST SST AM29F SST39SF S29AL S29GL SST39VF SST38VF S29AS SST39WF 1 ~ 32 Mb 2 ~ 16 Mb 1 ~ 4 Mb 4 ~ 32 Mb 16 Mb ~ 1Gb
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AM29F
SST39SF
S29AL
S29GL
SST39VF
SST38VF
S29AS
SST39WF
SST39WF160x
AM29F
SST25VF016B
tsop i 12mmx20mm
48-WFBGA
SST38VF640x
TSOP 28 SPI memory Package flash
FLASH CROSS sst39vf040
WFBGA-48
48TSOP
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atmel 8086
Abstract: 49f020 Am29 Flash Family m29F DATASHEET sst 90 AT49 SST39SF010A SST39SF020A AM29F002 SST39VF010
Text: Designing In SST’s Multi-Purpose Flash 39 Series Byte-wide Products Application Note October 2005 Designing In SST’s Multi-Purpose Flash (39 Series) Byte-wide Products INTRODUCTION This application note introduces the SST 39 series - SST’s mainstream Multi-Purpose Flash (MPF) product line. It
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SST39VF080
AT49LV008A-based
S72014-04-000
atmel 8086
49f020
Am29 Flash Family
m29F DATASHEET
sst 90
AT49
SST39SF010A
SST39SF020A
AM29F002
SST39VF010
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7474
Abstract: 98P03ABK
Text: SUPPLEMENT Am29BDD160G Known Good Die—Die Revision 1 16 Megabit 1 M x 16-Bit/512 K x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURE ADVANTAGES • Simultaneous Read/Write operations
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Am29BDD160G
16-Bit/512
32-Bit)
7474
98P03ABK
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spansion am29f top marking
Abstract: spansion top marking am29lv JC42 MBM29F S29CD016G S29CD-G 75281 170-nm spansion am29f part marking
Text: S29CD016G Known Good Die 16-Megabit 512 K x 32-Bit CMOS 2.5-Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory SUPPLEMENT This product has been retired and is not recommended for designs. Please contact your Spansion representative for alternates.
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S29CD016G
16-Megabit
32-Bit)
spansion am29f top marking
spansion top marking am29lv
JC42
MBM29F
S29CD-G
75281
170-nm
spansion am29f part marking
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Untitled
Abstract: No abstract text available
Text: S29CD016G Known Good Die 16 Megabit 512 K x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory Data Sheet Supplement Distinctive Characteristics Architecture Advantages Versatile I/O control — Device generates data output voltages and tolerates
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S29CD016G
32-Bit)
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10438
Abstract: No abstract text available
Text: S29CD016G Known Good Die 16 Megabit 512 K x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory Data Sheet Supplement Distinctive Characteristics Architecture Advantages Versatile I/O control — Device generates data output voltages and tolerates
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S29CD016G
32-Bit)
10438
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Spansion good die
Abstract: No abstract text available
Text: S29CD016G Known Good Die 16-Megabit 512 K x 32-Bit CMOS 2.5-Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory SUPPLEMENT Distinctive Characteristics Architecture Advantages — Program/Erase: 50 mA max — Standby mode: CMOS: 150 µA max
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S29CD016G
16-Megabit
32-Bit)
Spansion good die
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7474 14 PIN
Abstract: Am29BDD160GB
Text: SUPPLEMENT Am29BDD160G Known Good Die—Die Revision 1 16 Megabit 1 M x 16-Bit/512 K x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURE ADVANTAGES • Simultaneous Read/Write operations
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Am29BDD160G
16-Bit/512
32-Bit)
7474 14 PIN
Am29BDD160GB
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25091
Abstract: No abstract text available
Text: SUPPLEMENT Am29BDD160G Known Good Die—Die Revision 1 16 Megabit 1 M x 16-Bit/512 K x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURE ADVANTAGES • Simultaneous Read/Write operations
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Am29BDD160G
16-Bit/512
32-Bit)
20anged
25091
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spansion top marking am29lv
Abstract: S29CL016J S29CD016J S29CD-J S29CL-J Spansion wafer marking spansion am29f part marking
Text: S29CD016J/S29CL016J Known Good Die 16 Megabit 512k x 32-Bit CMOS 2.6 or 3.3 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory Supplement (Advance Information) General Description The Spansion S29CD016J and S29CL016J devices are Floating Gate products fabricated in 110 nm process technology.
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S29CD016J/S29CL016J
32-Bit)
S29CD016J
S29CL016J
S29CD-J)
S29CL-J)
S29CD016J/S29CL016J
spansion top marking am29lv
S29CD-J
S29CL-J
Spansion wafer marking
spansion am29f part marking
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MB 16651
Abstract: MB 16651 G 98n03 Am29F JC42 MBM29F S29CD032G S29CD-G spansion am29f top marking 74228
Text: S29CD032G Known Good Die 32 Megabit 1 M x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory Data Sheet Supplement This product has been retired and is not recommended for designs. Please contact your Spansion representative for alternates.
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S29CD032G
32-Bit)
MB 16651
MB 16651 G
98n03
Am29F
JC42
MBM29F
S29CD-G
spansion am29f top marking
74228
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c 5929 hot
Abstract: No abstract text available
Text: SUPPLEMENT Am29BL802C Known Good Die 8 Megabit 512 K x 16-Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ Minimum 100,000 erase cycle guarantee
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Am29BL802C
16-Bit)
c 5929 hot
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TS044
Abstract: AMD AM29F010B PACKAGE SA20-SA23 SA14-SA11 SA26-SA23 AM29F010 AM29F032
Text: Table of Contents Product Selector Guide Am30LV0064D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Am29LV010B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Am29F160D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
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Am30LV0064D
Am29LV010B
Am29F160D
Am29F010B
Am29F002B/Am29F002NB
Am29PL160C
Am29BL162C
Am29F004B
TS044
AMD AM29F010B PACKAGE
SA20-SA23
SA14-SA11
SA26-SA23
AM29F010
AM29F032
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S29CL032J
Abstract: S29CD032J cd032j S29Cl032 Spansion Flash Spansion wafer marking JC42 S29CD-J S29CL-J CL032J
Text: S29CD032J/S29CL032J Known Good Die 32 Megabit 1M x 32-Bit CMOS 2.6 or 3.3 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory with VersatileI/O Supplement (Preliminary) General Description The Spansion S29CD032J and S29CL032J devices are Floating Gate products fabricated in 110 nm process technology.
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S29CD032J/S29CL032J
32-Bit)
S29CD032J
S29CL032J
S29CD-J)
S29CL-J)
S29CD032J/S29CL032J
cd032j
S29Cl032
Spansion Flash
Spansion wafer marking
JC42
S29CD-J
S29CL-J
CL032J
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Untitled
Abstract: No abstract text available
Text: SUPPLEMENT Am29BL802C Known Good Die 8 Megabit 512 K x 16-Bit CMOS 3.0 Volt-only, Burst-mode, Boot Sector Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ Minimum 100,000 erase cycle guarantee
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Am29BL802C
16-Bit)
ACN2016)
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S29CL016J
Abstract: S29CL032 S29CD016J am29lv JC42 S29CD-J S29CL-J CD016J cl016 CL-016
Text: S29CD016J/S29CL016J Known Good Die 16 Megabit 512k x 32-Bit CMOS 2.6 or 3.3 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory with VersatileI/O Supplement (Preliminary) General Description The Spansion S29CD016J and S29CL016J devices are Floating Gate products fabricated in 110 nm process technology.
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S29CD016J/S29CL016J
32-Bit)
S29CD016J
S29CL016J
S29CD-J)
S29CL-J)
S29CD016J/S29CL016J
S29CL032
am29lv
JC42
S29CD-J
S29CL-J
CD016J
cl016
CL-016
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MICRON mcp
Abstract: 31136 S71NS064JA0 S71NS128JA0
Text: S71NS128JA0/S71NS064JA0 Stacked Multi-Chip Product MCP 128 Megabit (8 M x 16-Bit) and 64 Megabit (4 M x 16-Bit), 110 nm CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memories with 16 Megabit (1M x 16-Bit) pSRAM Distinctive Characteristics
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S71NS128JA0/S71NS064JA0
16-Bit)
31136A1
MICRON mcp
31136
S71NS064JA0
S71NS128JA0
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amd 15h power
Abstract: TSOP-48 pcb LAYOUT TSOP 48 LAYOUT AM29LV640 TSOP-48 FOOTPRINT
Text: Implementing a Common Layout for AMD MirrorBit and Intel StrataFlash™ Memory Devices Application Note -XO\ 7KH IROORZLQJ GRFXPHQW UHIHUV WR 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ
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31136
Abstract: S71NS064JA0 spansion top marking am29lv S71NS128JA0 NF16-NF19 S99DCNLB044MSA002
Text: S71NS128JA0/S71NS064JA0 Stacked Multi-Chip Product MCP 128 Megabit (8 M x 16-Bit) and 64 Megabit (4 M x 16-Bit), 110 nm CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memories with 16 Megabit (1M x 16-Bit) pSRAM Distinctive Characteristics
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S71NS128JA0/S71NS064JA0
16-Bit)
31136A2
31136
S71NS064JA0
spansion top marking am29lv
S71NS128JA0
NF16-NF19
S99DCNLB044MSA002
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