AM29F060
Abstract: Am29F080
Text: PRELIMINARY Am29F080 Advanced 8 Megabit 1,048,576 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory iw IÌ DISTINCTIVE CHARACTERISTICS • 5.0 Volt ±10% for read and write operations — Minimizes system level power requirements ■ Compatible with JEDEC-standards
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Am29F080
40-pin
44-pin
AM29F060
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AM29F060
Abstract: AM29F060B
Text: •1H?•L:f*1!f»Av AMDZ1 Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ■ 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.35(un process technology
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Am29F080B
Am29F080
preve-539-6490
-eO3296
0H276-6O3211
AM29F060
AM29F060B
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CHINA TV uoc
Abstract: X886 Am29F08QB AM29F060
Text: AM D3 Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation —- Minimizes system level power requirements ■ Manufactured on 0.35 |jm process technology
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Am29F080B
Am29F080
-l276-803299
55M-6/98-0
21503D
BQQ-57Q-G48
CHINA TV uoc
X886
Am29F08QB
AM29F060
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