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    AM28F Price and Stock

    ARCOTEK AM28F020-200EC

    FLASH NOR 2MB 12V TSOP 200ns
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    DigiKey AM28F020-200EC Tube 1,935 100
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    AMD AM28F512-120JC

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    Bristol Electronics AM28F512-120JC 51
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    AMD AM28F020-200PC

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    Bristol Electronics AM28F020-200PC 5
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    AMD AM28F020-120C3JI

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    Bristol Electronics AM28F020-120C3JI 87
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    AMD AM28F010-150JC

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    Bristol Electronics AM28F010-150JC 90 2
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    AM28F010-150JC 76
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    Quest Components AM28F010-150JC 164
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    AM28F010-150JC 60
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    AM28F010-150JC 72
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    AM28F010-150JC 35
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    AM28F010-150JC 34
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    AM28F010-150JC 72
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    AM28F010-150JC 110
    • 1 $8.31
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    AM28F010-150JC 233
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    AM28F010-150JC 131
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    Find more AM28F price and stock on Findchips.com

    AM28F Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Type PDF
    Am28F010 Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    AM28F010 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    AM28F010-120/BUA Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    AM28F010-120/BXA Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    AM28F010-120C3/BUA Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    AM28F010-120C3/BXA Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    AM28F010-120C3DC Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    AM28F010-120C3DCB Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    AM28F010-120C3DE Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    AM28F010-120C3DEB Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    AM28F010-120C3DI Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    AM28F010-120C3DIB Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    AM28F010-120C3JC Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    AM28F010-120C3JI Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    AM28F010-120C3LC Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    AM28F010-120C3LCB Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    AM28F010-120C3LE Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    AM28F010-120C3LEB Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    AM28F010-120C3LI Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    AM28F010-120C3LIB Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    ...

    AM28F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AM28F020

    Abstract: No abstract text available
    Text: FINAL Am28F020 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current


    Original     		PDF Am28F020 32-pin

    AM28F020

    Abstract: 32 pin EPROM 2 megabit flash memory am28f020-150
    Text: AMENDMENT Am28F020 Data Sheet 1996 Flash Products Data Book/Handbook INTRODUCTION This amendment supersedes information regarding the Am28F020 device in the 1996 Flash Products Data Book/Handbook, PID 11796D. This document includes replacement pages for the Am28F020 data sheet,


    Original     		PDF Am28F020 11796D. 14727E. IN3064 14727E-17 14727E-18 32 pin EPROM 2 megabit flash memory am28f020-150

    AM28F256

    Abstract: A1H Transistor AM28F256-150PC
    Text: FINAL Am28F256 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current


    Original     		PDF Am28F256 32-Pin A1H Transistor AM28F256-150PC

    AM28F256A

    Abstract: Am29Fxxx
    Text: FINAL Am28F256A 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current ■ Embedded Erase Electrical Bulk Chip-Erase


    Original     		PDF Am28F256A 32-Pin Am29Fxxx

    Am26F020

    Abstract: No abstract text available
    Text: FINAL Am28F020 Advanced 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory n j ïie ls DISTINCTIVE CHARACTERISTICS • High performance ■ — 90 ns maximum access time ■ CMOS Low power consumption ■ ■ Compatible with JEDEC-standard byte-wide


    OCR Scan     		PDF Am28F020 32-Pin Am26F020

    Untitled

    Abstract: No abstract text available
    Text: AMDEI Am28F020A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current


    OCR Scan     		PDF Am28F020A 32-pin

    28F020A

    Abstract: 28F020T
    Text: FIN A L a Am28F020A Advanced Micro Devices 262,144 x 8-Bit CMOS Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High perform ance - 90 ns m aximum access time, I CMOS low power consum ption - 30 m A m aximum active current - 100 nA m aximum standby current


    OCR Scan     		PDF Am28F020A 32-Pin 28F020A 28F020A 28F020T

    Untitled

    Abstract: No abstract text available
    Text: AMD£I Am28F256 256 Kilobit 32 K X 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ Flasherase Electrical Bulk Chip-Erase — One second typical chip-erase


    OCR Scan     		PDF Am28F256 32-Pin AM28F256

    AMD 28F512

    Abstract: No abstract text available
    Text: a F IN A L Advanced Micro Devices Am28F512 65,536 X 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • High perform ance - 70 ns m aximum access time ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Low power consum ption - 30 m A m aximum active current


    OCR Scan     		PDF Am28F512 32-pin 28F512 AMD 28F512

    Untitled

    Abstract: No abstract text available
    Text: n FIN A L Am28F256 Advanced 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • ■ High performance ■ CMOS Low power consumption ■ ■ — 0.5 second typical chip program ■ — 32-pin PDIP — 32-pin PLCC


    OCR Scan     		PDF Am28F256 32-Pin 28F256

    Untitled

    Abstract: No abstract text available
    Text: El Ad va n ce I n f o r m a t i o n Am28F010 Advanced Micro Devices 131,072 x 8-Bit C M O S Flash E 2PROM DISTINCTIVE CHARACTERISTICS • Flasherase Electrical Bulk Chlp-Erase ■ — One Second Typical Chip-Erase ■ Compatible with JEDEC Standard Byte


    OCR Scan     		PDF Am28F010 32-pln 32-pin 120ns 120ns. 28F010

    Untitled

    Abstract: No abstract text available
    Text: a Am28F020A Advanced Micro Devices 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current


    OCR Scan     		PDF Am28F020A 32-Pin 14jis.

    Untitled

    Abstract: No abstract text available
    Text: FINAL AMD£I Am28F256 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ Latch-up protected to 100 mA from -1 V to V c c +1 V ■ Flasherase Electrical Bulk Chip-Erase — 70 ns maximum access time


    OCR Scan     		PDF Am28F256 32-Pin TS032--32-Pin 16-038-TSOP-2 TSR032--32-Pin

    Untitled

    Abstract: No abstract text available
    Text: Am28F256 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ ■ CMOS Low power consumption Flasherase Electrical Bulk Chip-Erase


    OCR Scan     		PDF Am28F256 32-Pin 0257S2Ã

    Untitled

    Abstract: No abstract text available
    Text: a Am28F020 262,144 x 8-Bit CMOS Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ High performance - 90 ns maximum access time CMOS Low power consumption - 30 mA maximum active current -1 0 0 iA maximum standby current - No data retention power


    OCR Scan     		PDF Am28F020 32-Pin -32-pin

    Untitled

    Abstract: No abstract text available
    Text: AMD£I Am28F020A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — A ccess tim es as fast as 70 ns ■ CMOS low power consumption — 30 mA m axim um active current


    OCR Scan     		PDF Am28F020A 32-pin

    Untitled

    Abstract: No abstract text available
    Text: FINAL A M D ii Am28F512A 512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access tim e ■ CMOS low power consumption — 30 mA maximum active current


    OCR Scan     		PDF Am28F512A 32-Pin

    Untitled

    Abstract: No abstract text available
    Text: FINAL A M D ii Am28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Mem ory with Embedded Algorithm s DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Embedded Erase Electrical Bulk Chip Erase High performance


    OCR Scan     		PDF Am28F010A 32-pin

    AM28F256

    Abstract: No abstract text available
    Text: ADV MICRO MEMORY 4ÖE T> □2S7SEÖ GD30bSS 7 IAMD4 Preliminary Advanced Micro Devices Am28F256 32,768 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS High performance - 90 ns maximum access time Low power consumption - 30 mA maximum active current


    OCR Scan     		PDF GD30bSS Am28F256 32-pin -32-pin Am28F256-95C4JC Am28F256-95C3JC

    28F020

    Abstract: AM28F020
    Text: a Am28F020 Advanced Micro Devices 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • ■ High perform ance — 90 ns m aximum access time ■ ■ CMOS Low pow er consum ption — 100 nA m aximum standby current


    OCR Scan     		PDF Am28F020 32-Pin -32-pin 28F020

    AM28F020

    Abstract: qu34 A03404
    Text: Am28F020 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ ■ ■ CMOS Low power consumption ■ — 100 n A m a xim um s ta n d b y c u rre n t Flashrite Programming


    OCR Scan     		PDF Am28F020 32-Pin -32-pin 02S752Ã 3MD57 qu34 A03404

    Untitled

    Abstract: No abstract text available
    Text: FINAL AMD£I Am28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V High performance — Access tim es as fast as 70 ns * — 5 seconds typical chip erase, including


    OCR Scan     		PDF Am28F010A 32-pin 16-038-TSOP-2 TSR032â TSR032

    Untitled

    Abstract: No abstract text available
    Text: FINAL AMDH Am28F256A 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ — A ccess tim es as fast as 70 ns ■ CMOS low power consumption — 30 mA m axim um active current


    OCR Scan     		PDF Am28F256A 32-Pin 100speed

    Untitled

    Abstract: No abstract text available
    Text: FINAL A M D ii Am28F020A 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Mem ory with Embedded Algorithm s DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Embedded Erase Electrical Bulk Chip Erase High performance


    OCR Scan     		PDF Am28F020A 32-pin