7n52
Abstract: 1525P
Text: STB7N52K3, STD7N52K3 STF7N52K3, STP7N52K3 N-channel 525 V, 0.72 Ω, 6 A SuperMESH3 Power MOSFET in D²PAK, DPAK, TO-220FP and TO-220 packages Datasheet — production data Features Order codes TAB VDSS RDS on max. ID TAB Pw 2 3 1 2 3 STB7N52K3 STD7N52K3
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STB7N52K3,
STD7N52K3
STF7N52K3,
STP7N52K3
O-220FP
O-220
STB7N52K3
STF7N52K3
7n52
1525P
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4n62k
Abstract: 4N62 STF4N62K3 STFI4N62K3 i-pak Package zener diode 4N62K3
Text: STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 N-channel 620 V, 1.7 Ω typ., 3.8 A SuperMESH3 Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 and IPAK packages Datasheet — production data Features Order codes STF4N62K3 STFI4N62K3 STI4N62K3
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STF4N62K3,
STFI4N62K3,
STI4N62K3,
STP4N62K3,
STU4N62K3
O-220FP,
O-220
STF4N62K3
STFI4N62K3
STI4N62K3
4n62k
4N62
i-pak Package zener diode
4N62K3
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stp26nm60
Abstract: STW26NM60N 26NM60N STP26NM60N 26nm60 STI26NM60N STB26NM60N STB26NM60 STF26NM60N
Text: STB26NM60N, STF26NM60N, STI26NM60N STP26NM60N, STW26NM60N N-channel 600 V, 0.135 Ω typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages Datasheet — production data Features Type VDSS RDS on max ID STB26NM60N 600 V
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STB26NM60N,
STF26NM60N,
STI26NM60N
STP26NM60N,
STW26NM60N
O-220,
O-220FP
O-247
STB26NM60N
STF26NM60N
stp26nm60
STW26NM60N
26NM60N
STP26NM60N
26nm60
STB26NM60
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2N62K3
Abstract: STD2N62K3 STP2N62K3
Text: STB2N62K3, STD2N62K3, STF2N62K3, STP2N62K3, STU2N62K3 N-channel 620 V, 3 Ω, 2.2 A SuperMESH3 Power MOSFET in D²PAK, DPAK, TO-220FP, TO-220 and IPAK packages Datasheet — production data Features TAB Order codes VDSS RDS on max ID PTOT 3 2 3 STB2N62K3
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STB2N62K3,
STD2N62K3,
STF2N62K3,
STP2N62K3,
STU2N62K3
O-220FP,
O-220
STB2N62K3
STD2N62K3
STF2N62K3
2N62K3
STP2N62K3
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STY112
Abstract: 112N65 STY112N65M5
Text: STY112N65M5 N-channel 650 V, 0.019 Ω, 96 A, MDmesh V Power MOSFET in Max247 package Datasheet — production data Features Order code VDSS @TjMAX RDS on max ID STY112N65M5 710 V < 0.022 Ω 96 A • Higher VDSS rating ■ Higher dv/dt capability ■ Excellent switching performance
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STY112N65M5
Max247
Max247
STY112
112N65
STY112N65M5
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STP13NM60
Abstract: 13NM60 STD13NM60 STF13NM60 STU13NM60 stb13nm60 13nm60n STW1 STB13NM60N MJ430
Text: STx13NM60N N-channel 600 V, 0.28 Ω, 11 A MDmesh II Power MOSFET in D²PAK, DPAK, TO-220FP, I²PAK, TO-220, IPAK, TO-247 Features TAB Order codes VDSS @Tjmax RDS(on) max TAB 3 ID 1 3 1 STB13NM60N STD13NM60N STF13NM60N STI13NM60N STP13NM60N STU13NM60N
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STx13NM60N
O-220FP,
O-220,
O-247
STB13NM60N
STD13NM60N
STF13NM60N
STI13NM60N
STP13NM60N
STU13NM60N
STP13NM60
13NM60
STD13NM60
STF13NM60
STU13NM60
stb13nm60
13nm60n
STW1
MJ430
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10n62k3
Abstract: STF10N62K3 STI10N62K3 STF10N62K3 ST 10N6 10n62
Text: STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 N-channel 620 V, 0.68 Ω typ., 3.8 A SuperMESH3 Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 packages Datasheet − production data Features Type VDSS RDS on max Pw ID 3 STF10N62K3 STFI10N62K3 STI10N62K3
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STF10N62K3,
STFI10N62K3,
STI10N62K3,
STP10N62K3
O-220FP,
O-220
STF10N62K3
STFI10N62K3
STI10N62K3
10n62k3
STF10N62K3 ST
10N6
10n62
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f10nk50z
Abstract: f10nk f10nk50 STF10NK F10N STF10NK50Z
Text: STF10NK50Z N-channel 500 V, 0.55 Ω, 9 A Zener-protected SuperMESH Power MOSFET in TO-220FP package Datasheet — production data Features Order code VDSS RDS on max ID PTOT STF10NK50Z 500 V < 0.7 Ω 9A 30 W • Extremely high dv/dt capability ■ 100% avalanche tested
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STF10NK50Z
O-220FP
O-220FP
f10nk50z
f10nk
f10nk50
STF10NK
F10N
STF10NK50Z
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139N65M5
Abstract: STY139N65M5
Text: STY139N65M5 N-channel 650 V, 0.014 Ω, 130 A, MDmesh V Power MOSFET in Max247 package Datasheet — production data Features Order code VDSS @TjMAX RDS on max ID STY139N65M5 710 V < 0.017 Ω 130 A • Max247 worldwide best RDS(on) ■ Higher VDSS rating
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STY139N65M5
Max247
Max247
139N65M5
STY139N65M5
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13N60M2
Abstract: STL13N60M2
Text: STL13N60M2 N-channel 600 V, 0.39 Ω typ., 7 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet − production data Features Order code VDS @ TJmax RDS on max ID STL13N60M2 650 V 0.42 Ω 7A • Extremely low gate charge • Lower RDS(on) x area vs previous generation
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STL13N60M2
DocID026363
13N60M2
STL13N60M2
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Untitled
Abstract: No abstract text available
Text: STB46N30M5 Automotive-grade N-channel 300 V, 53 A, 0.037 Ω typ., MDmesh V Power MOSFET in a D2PAK package Datasheet - production data Features TAB Order code VDS RDS on max. ID STB46N30M5 300 V 0.04 Ω 53 A • Designed for automotive applications and
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STB46N30M5
AEC-Q101
DocID026126
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Untitled
Abstract: No abstract text available
Text: STP90N6F6 N-channel 60 V, 0.0059 Ω typ., 84 A STripFET VI DeepGATE™ Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS on max. ID PTOT STP90N6F6 60 V 0.0068 Ω 84 A 136 W • Figure 1: Internal schematic diagram
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STP90N6F6
O-220
DocID025190
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PDF
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Untitled
Abstract: No abstract text available
Text: STT5N2VH5 N-channel 20 V, 0.025 Ω typ., 5 A STripFET V Power MOSFET in a SOT23-6L package Datasheet — production data Features Order code VDS RDS on max ID PTOT STT5N2VH5 20 V 0.04 Ω (VGS=2.5 V) 5 A 4 5 6 1.6 W • Very low profile package 3 2 • Conduction losses reduced
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OT23-6L
OT23-6L
DocID026116
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PDF
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Untitled
Abstract: No abstract text available
Text: STL9N60M2 N-channel 600 V, 0.76 Ω typ., 4.8 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet - production data Features Order code VDS @ TJmax RDS on max STL9N60M2 ID 0.86 Ω 650 V 4.8 A • Extremely low gate charge 1
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STL9N60M2
DocID025655
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STS11N3LLH5
Abstract: 001411A
Text: STS11N3LLH5 N-channel 30 V, 0.012 Ω, 11 A, SO-8 STripFET V Power MOSFET Features Type VDSS RDS on max ID STS11N3LLH5 30 V < 0.014 Ω 11 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)
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STS11N3LLH5
STS11N3LLH5
001411A
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Untitled
Abstract: No abstract text available
Text: STL9N3LLH5 N-channel 30 V, 0.015 Ω, 9 A, PowerFLAT 3.3x3.3 STripFET™ V Power MOSFET Features Type VDSS RDS(on) max ID STL9N3LLH5 30 V < 0.019 Ω 9 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)
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7610
Abstract: marking 7610 STT5NF20V stt2 mosfet
Text: STT5NF20V N-channel 20 V, 0.030 Ω, 5 A SOT23-6L 2.5 V drive STripFET II Power MOSFET Preliminary data Features Type VDSS STT5NF20V 20 V RDS on ID < 0.035 Ω @ 4.5 V < 0.045 Ω @ 2.5 V 5A Applications • SOT23-6L Switching Description This Power MOSFET is the latest development of
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STT5NF20V
OT23-6L
7610
marking 7610
STT5NF20V
stt2 mosfet
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w45nm50fd
Abstract: data sheet of w45nm50fd STW45NM50FD w45nm50f W45NM50
Text: STW45NM50FD N-channel 500 V, 0.07 Ω, 45 A, TO-247 FDmesh Power MOSFET with fast diode Features Type VDSS RDS(on) max ID STW45NM50FD 500 V < 0.1 Ω 45 A • 100% avalanche tested ■ High dv/dt and avalanche capabilities ■ Low input capacitance and gate charge
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STW45NM50FD
O-247
w45nm50fd
data sheet of w45nm50fd
STW45NM50FD
w45nm50f
W45NM50
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95N3LLH6
Abstract: 95n3l STP95N3LLH6 STB95N3LLH6 STD95N3LLH6 152-28 15228 STD95N3L
Text: STB95N3LLH6, STD95N3LLH6 STP95N3LLH6, STU95N3LLH6 N-channel 30 V, 0.0037 Ω , 80 A, D2PAK, DPAK, IPAK, TO-220 STripFET VI DeepGATE™ Power MOSFET Features Type VDSS RDS on max ID 30 V 0.0042 Ω STD95N3LLH6 30 V 0.0042 Ω 80 A STP95N3LLH6 30 V 0.0042 Ω
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STB95N3LLH6,
STD95N3LLH6
STP95N3LLH6,
STU95N3LLH6
O-220
STP95N3LLH6
STB95N3LLH6
95N3LLH6
95n3l
STP95N3LLH6
STB95N3LLH6
STD95N3LLH6
152-28
15228
STD95N3L
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PDF
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F7NM80
Abstract: D7NM8 D7NM80 P7NM80 STD7NM80 TO-251 footprint STD7NM80-1 STP7NM80 STF7NM80
Text: STD7NM80, STD7NM80-1 STF7NM80, STP7NM80 N-channel 800 V, 0.95 Ω, 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh Power MOSFET Features Type VDSS RDS on ID STD7NM80 800 V < 1.05 Ω 6.5 A STD7NM80-1 800 V < 1.05 Ω 6.5 A STF7NM80 800 V < 1.05 Ω 6.5 A STP7NM80
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STD7NM80,
STD7NM80-1
STF7NM80,
STP7NM80
O-220,
O-220FP,
STD7NM80
STF7NM80
F7NM80
D7NM8
D7NM80
P7NM80
STD7NM80
TO-251 footprint
STD7NM80-1
STP7NM80
STF7NM80
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75N3LLH6
Abstract: STD75N3LLH6 smd diode code B4 ST STD75N3L STU75N3LLH6 095B4 75n3l TO-251 footprint
Text: STD75N3LLH6 STU75N3LLH6, STU75N3LLH6-S N-channel 30 V, 0.0042 Ω, 75 A, DPAK, IPAK, Short IPAK STripFET VI DeepGATE™ Power MOSFET Features Type VDSS RDS on max ID STD75N3LLH6 30 V < 0.0055 Ω 75 A STU75N3LLH6 30 V < 0.0059 Ω 75 A STU75N3LLH6-S 30 V
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STD75N3LLH6
STU75N3LLH6,
STU75N3LLH6-S
STU75N3LLH6
75N3LLH6
STD75N3LLH6
smd diode code B4 ST
STD75N3L
STU75N3LLH6
095B4
75n3l
TO-251 footprint
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STD150N3LLH6
Abstract: 150N3LLH6 STP150N3LLH6 stp150n3 TO-251 footprint STU150N3LLH6
Text: STD150N3LLH6 STP150N3LLH6, STU150N3LLH6 N-channel 30 V, 0.0024 Ω , 80 A, DPAK, IPAK, TO-220 STripFET VI DeepGATE™ Power MOSFET Features Type VDSS RDS on max ID STD150N3LLH6 30 V 0.0028 Ω 80 A STP150N3LLH6 30 V 0.0033 Ω 80 A STu150N3LLH6 30 V 0.0033 Ω
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STD150N3LLH6
STP150N3LLH6,
STU150N3LLH6
O-220
STP150N3LLH6
STD150N3LLH6
150N3LLH6
STP150N3LLH6
stp150n3
TO-251 footprint
STU150N3LLH6
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STW35N65M5
Abstract: STP35N65M5 35N65M5 STB35N65M5 STF35N65M5 STW35N65 STI35N65M5
Text: STB35N65M5, STF35N65M5, STI35N65M5 STP35N65M5, STW35N65M5 N-channel 650 V, 0.085 Ω, 27 A, MDmesh V Power MOSFET in D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features Type VDSS @ TJMAX RDS on max 710 V 710 V 710 V 710 V 710 V < 0.098 Ω < 0.098 Ω < 0.098 Ω
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STB35N65M5,
STF35N65M5,
STI35N65M5
STP35N65M5,
STW35N65M5
O-220FP,
O-220,
O-247
STB35N65M5
STF35N65M5
STW35N65M5
STP35N65M5
35N65M5
STB35N65M5
STF35N65M5
STW35N65
STI35N65M5
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STD90N4F3
Abstract: STI90N4F3 STP90N4F3 STU90N4F3
Text: STD90N4F3, STI90N4F3 STP90N4F3, STU90N4F3 N-channel 40 V, 5.0 mΩ, 80 A, DPAK, TO-220, IPAK, I2PAK STripFET III Power MOSFET Features Type • ■ VDSS RDS on max ID Pw STD90N4F3 40 V < 5.8mΩ 80 A 110 W STI90N4F3 40 V < 6.2 mΩ 80 A 110 W STP90N4F3
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STD90N4F3,
STI90N4F3
STP90N4F3,
STU90N4F3
O-220,
STD90N4F3
STP90N4F3
O-220
STD90N4F3
STI90N4F3
STP90N4F3
STU90N4F3
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