5SLA 3600E170300
Abstract: 5SYA2039 3600E170300
Text: Data Sheet, Doc. No. 5SYA 1416-03 06-2012 5SLA 3600E170300 HiPak Single DIODE Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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3600E170300
C9113
CH-5600
5SLA 3600E170300
5SYA2039
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G330100 Doc. No. 5SYA1563-00 Apr.06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • High power density • AlSiC base-plate for high power
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1200G330100
5SYA1563-00
CH-5600
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din 41240
Abstract: A734127 A735066 A734102 A735025 A734130 alsic A734111 A734109 A735026
Text: ALSIC HV 160 . 500 V 8 000 h / 105°C 4,7 . 2200 µF ∅ 10 . 35.5 mm Spécifications applicables - 55°C / + 105°C / 56 jours/days L.L. Specifications DIN 41240 - Classe d'utilisation - 55 + 105°C CECC 30 300 Longue durée CEI 60 384-4 Longue durée
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5000h
din 41240
A734127
A735066
A734102
A735025
A734130
alsic
A734111
A734109
A735026
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A720044
Abstract: A7201 alsic 105 A720063 a720 ALSIC 145 A720041 ALSIC 175 A720061 iec 384-4 ll
Text: 500 h / 175°C 64 000 h / 105°C ALSIC 175 10 . 63 V 22 . 4700 µF ∅ 10 . 16 mm Spécifications applicables - 55°C / + 175°C / 56 jours/days L.L. Specifications NFC 83 110 - Longue durée CECC 30 300 CEI 60 384-4 longue durée NFC 83 110 - Long life
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FZ800R12KS4
Abstract: No abstract text available
Text: Technische Information / technical information FZ800R12KS4_B2 IGBT-Module IGBT-modules Hochleistungsmodul mit AlSiC Bodenplatte und schnellem IGBT2 für hochfrequentes Schalten High Power Module with AlSiC base plate and short tail IGBT2 for high switching frequency
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FZ800R12KS4
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Untitled
Abstract: No abstract text available
Text: QID0660011 Powerex, Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Dual IGBT Module 600 Amperes / 600 Volts Description: Powerex Dual IGBT power module is configured as a half bridge inverter. The Aluminum Silicon Carbide (AlSiC) baseplate offers light weight
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QID0660011
-600A/
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 6500 V 600 A ABB HiPakTM IGBT Module 5SNA 0600G650100 Doc. No. 5SYA1558-02 Jan 06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability
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0600G650100
5SYA1558-02
CH-5600
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DFM600XXM45-F000
Abstract: DS5915-1
Text: DFM600XXM45-F000 Fast Recovery Diode Module DS5915-1.0 June 2007 LN25309 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 1200A Rating
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DFM600XXM45-F000
DS5915-1
LN25309)
DFM600XXM45-F000
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DFM400NXM33-F000
Abstract: 3300V FRD
Text: DFM400NXM33-F000 Fast Recovery Diode Module DS5910-1.0 March 2007 LN25214 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 800A Rating
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DFM400NXM33-F000
DS5910-1
LN25214)
DFM400NXM33-F000
3300V FRD
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DFM200PXM33-F000
Abstract: basic ac motor reverse forward electrical diagram
Text: DFM200PXM33-F000 Fast Recovery Diode Module DS5908- 1.0 March 2007 LN25211 . FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base with AlN substrates • Low FIT Rate KEY PARAMETERS VRRM VF
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DFM200PXM33-F000
DS5908-
LN25211)
DFM200PXM33-F000
3300-volt,
basic ac motor reverse forward electrical diagram
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5SLD0650J450300
Abstract: No abstract text available
Text: VRRM = IF = 4500 V 2x 650 A ABB HiPakTM DIODE Module 5SLD 0650J450300 PRELIMINARY Doc. No. 5SYA 1599-00 Nov 07 • Ultra low-loss, rugged SPT+ diode • Smooth switching SPT+ diode for good EMC • Industry standard package • High power density • AlSiC base-plate for high power
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0650J450300
CH-5600
5SLD0650J450300
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5SYA2042
Abstract: 5SNA0400J650100
Text: VCE IC = = 6500 V 400 A ABB HiPakTM IGBT Module 5SNA 0400J650100 Doc. No. 5SYA 1592-03 04-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability AlN substrate for low thermal
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0400J650100
CH-5600
5SYA2042
5SNA0400J650100
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5SNA1200G450300
Abstract: 1200G450300 cosmi
Text: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450300 PRELIMINARY Doc. No. 5SYA 1401-00 Dec 08 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power
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1200G450300
CH-5600
5SNA1200G450300
1200G450300
cosmi
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IC 7400 configuration
Abstract: 5SNA1200G450300
Text: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450300 Doc. No. 5SYA 1401-01 Mar 09 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power
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1200G450300
CH-5600
IC 7400 configuration
5SNA1200G450300
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IC 7400 configuration
Abstract: No abstract text available
Text: VCE IC = = 4500 V 650 A ABB HiPakTM IGBT Module 5SNA 0650J450300 Doc. No. 5SYA 1598-03 Apr 12 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power
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0650J450300
CH-5600
IC 7400 configuration
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5SNA1000G450300
Abstract: cosmi 5SNA 1000G450300
Text: VCE IC = = 4500 V 1000 A ABB HiPakTM IGBT Module 5SNA 1000G450300 PRELIMINARY Doc. No. 5SYA 1597-00 Oct 07 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power
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1000G450300
CH-5600
5SNA1000G450300
cosmi
5SNA 1000G450300
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1426-00 05-2012 5SNG 0250P330305 ABB HiPakTM IGBT Module VCE = 3300 V IC = 250 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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0250P330305
CH-5600
0250P330305
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1416-03 06-2012 5SLA 3600E170300 ABB HiPakTM Single Diode Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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3600E170300
CH-5600
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Untitled
Abstract: No abstract text available
Text: VRRM = IF = 4500 V 2x 650 A ABB HiPakTM DIODE Module 5SLD 0650J450300 Doc. No. 5SYA 1599-01 May 08 • Ultra low-loss, rugged SPT+ diode • Smooth switching SPT+ diode for good EMC • Industry standard package • High power density • AlSiC base-plate for high power
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0650J450300
CH-5600
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5SLD0650J450300
Abstract: Abb diode ABB Switzerland
Text: VRRM = IF = 4500 V 2x 650 A ABB HiPakTM DIODE Module 5SLD 0650J450300 Doc. No. 5SYA 1599-02 Jan 09 • Ultra low-loss, rugged SPT+ diode • Smooth switching SPT+ diode for good EMC • Industry standard package • High power density • AlSiC base-plate for high power
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0650J450300
CH-5600
5SLD0650J450300
Abb diode
ABB Switzerland
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200E330100 Doc. No. 5SYA1556-04 04-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling capability
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1200E330100
5SYA1556-04
CH-5600
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5SYA2039
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1413-02 04-2012 5SNA 0500J650300 ABB HiPakTM IGBT Module VCE = 6500 V IC = 500 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability
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0500J650300
CH-5600
0500J650300|
5SYA2039
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IGBT CHIP 600V ABB
Abstract: No abstract text available
Text: VCE IC = = 1200 V 2400 A ABB HiPakTM IGBT Module 5SNA 2400E120100 PRELIMINARY Doc. No. 5SYA1561-00 Apr 06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power
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2400E120100
5SYA1561-00
CH-5600
IGBT CHIP 600V ABB
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 4500 V 650 A ABB HiPakTM IGBT Module 5SNA 0650J450300 PRELIMINARY Doc. No. 5SYA 1598-00 Nov 07 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power
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0650J450300
CH-5600
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