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    ALR TRANSISTOR Search Results

    ALR TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ALR TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LPG GAS SENSOR

    Abstract: CO Gas sensor gas sensor gas module sensor CO Sensor "Co Sensor" alcohol sensor module Hair Curler LPG GAS SENSOR application basic stamp BS2 ic
    Text: Web Site: www.parallax.com Forums: forums.parallax.com Sales: sales@parallax.com Technical: support@parallax.com Office: 916 624-8333 Fax: (916) 624-8003 Sales: (888) 512-1024 Tech Support: (888) 997-8267 CH4 (Methane) Gas Sensor Module (#27930) CO (Carbon Monoxide) Gas Sensor Module (#27931)


    Original     		PDF

    AM336-1

    Abstract: ZPD 6.8 ITT ZPD ITT ZPD ITT 6,8 ITT ZPD 4.7 ZPD ITT diode 3 3 ZPD 15 ITT ZPD ITT 10 Zener ZPD 24 blue BST60
    Text: IC FOR OPTO DETECTOR AM 336 FEATURES GENERAL DESCRIPTION • 2 Operation Modes Proximity and Barrier • External Synchronisation in the Barrier Mode • Ambient Light Rejection • Adjustable Threshold and Hysteresis • Normally Open and Normally Closed


    Original     		PDF SFH40x; SFH41x; SFH48x; SHF21x SFH22x 100nF BST60; BCX51 AM336-1 ZPD 6.8 ITT ZPD ITT ZPD ITT 6,8 ITT ZPD 4.7 ZPD ITT diode 3 3 ZPD 15 ITT ZPD ITT 10 Zener ZPD 24 blue BST60

    2sa174

    Abstract: 2SA1748 2SC4562
    Text: Transistor 2SA1748 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4562 Unit: mm 2.1±0.1 • Features +0.1 0.3–0 0.65 1.3±0.1 0.65 1 3 2 Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage


    Original     		PDF 2SA1748 2SC4562 2sa174 2SA1748 2SC4562

    2SA1791

    Abstract: 2SC4656
    Text: Transistor 2SA1791 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4656 Unit: mm 1.6±0.15 Ratings Unit VCBO –50 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –5 V Collector current IC –50


    Original     		PDF 2SA1791 2SC4656 2SA1791 2SC4656

    schematic ultrasonic fogger

    Abstract: acoustic filter 40khz CAR alarm INTEGRATED CIRCUIT 40KHZ ULTRASONIC transducers DA5546 fogger car intrusion ultrasonic sensor vehicle ultrasonic sensor intrusion alarm 40KHz ultrasonic interface 40khz ULTRASOUND DRIVER
    Text: Mixed-Signal ASICs Introduction The mixed signal ASIC, as its name implies, combines elements of the analog world and the digital world into one customized IC. The ability to combine analog functions of all levels of complexity onto the same chip as the more


    Original     		PDF 31-Jan-96 schematic ultrasonic fogger acoustic filter 40khz CAR alarm INTEGRATED CIRCUIT 40KHZ ULTRASONIC transducers DA5546 fogger car intrusion ultrasonic sensor vehicle ultrasonic sensor intrusion alarm 40KHz ultrasonic interface 40khz ULTRASOUND DRIVER

    2SA1748

    Abstract: 2SC4562
    Text: Transistor 2SA1748 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4562 0.425 Unit: mm +0.1 0.3Ð0.0 • Features 5û 1 2 0.2±0.1 ● 2.1±0.1 ● 3 High transition frequency fT. Small collector output capacitance Cob.


    Original     		PDF 2SA1748 2SC4562 2SA1748 2SC4562

    2SA1748

    Abstract: 2SC4562
    Text: Transistor 2SA1748 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4562 Unit: mm 2.1±0.1 • Features +0.1 0.3–0 0.65 1.3±0.1 0.65 1 3 2 Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage


    Original     		PDF 2SA1748 2SC4562 2SA1748 2SC4562

    2SA1791

    Abstract: 2SC4656
    Text: Transistor 2SA1791 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4656 Unit: mm 0.2+0.1 –0.05 Parameter Symbol Ratings Unit VCBO –50 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –5 V


    Original     		PDF 2SA1791 2SC4656 2SA1791 2SC4656

    2SA1791

    Abstract: 2SC4656
    Text: Transistor 2SA1791 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4656 Unit: mm 1.6±0.15 Ratings Unit VCBO –50 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –5 V Collector current IC –50


    Original     		PDF 2SA1791 2SC4656 2SA1791 2SC4656

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch mm FEATURES .119(3.00) .110(2.80) • Collector current IC = -200mA .103(2.60) • Both normal and Pb free product are available : .047(1.20)


    Original     		PDF MMBT3906 -200mA MIL-STD-202, OT-23,

    "marking s1a" sot-23

    Abstract: 1N916 MMBT3904
    Text: DATA SHEET MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch mm FEATURES .119(3.00) .110(2.80) .103(2.60) .047(1.20) • Collector current IC = 200mA • Pb free product are available : 99% Sn above can meet Rohs


    Original     		PDF MMBT3904 200mA MIL-STD-202G, OT-23, "marking s1a" sot-23 1N916 MMBT3904

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch mm FEATURES .119(3.00) .110(2.80) .103(2.60) • Collector current IC = 200mA • Both normal and Pb free product are available : .047(1.20)


    Original     		PDF MMBT3904 200mA MIL-STD-202, OT-23,

    M2A MARKING SOT-23

    Abstract: M2A transistor 1N914 MMBT2222A TRANSISTOR NPN SI SOT-23 ROHS M2A SOT23 marking M2A
    Text: DATA SHEET MMBT2222A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch mm FEATURES .119(3.00) .110(2.80) .103(2.60) • Collector current IC = 600mA • In compliance with EU RoHS 2002/95/EC directives .047(1.20)


    Original     		PDF MMBT2222A 600mA 2002/95/EC MIL-STD-750, OT-23, M2A MARKING SOT-23 M2A transistor 1N914 MMBT2222A TRANSISTOR NPN SI SOT-23 ROHS M2A SOT23 marking M2A

    s2A PART MARKING SOT-23

    Abstract: transistor SOT23 YC 30 MARKING S2A SOT-23 1N916 MMBT3906 YC sot 23 s2A SOT23
    Text: DATA SHEET MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch mm FEATURES .119(3.00) .110(2.80) • Collector current IC = -200mA .103(2.60) • Both normal and Pb free product are available : .047(1.20)


    Original     		PDF MMBT3906 -200mA MIL-STD-202, OT-23, s2A PART MARKING SOT-23 transistor SOT23 YC 30 MARKING S2A SOT-23 1N916 MMBT3906 YC sot 23 s2A SOT23

    M2A MARKING SOT-23

    Abstract: 1N914 MMBT2222A MARKING M2A SOT-23 sot23 m2a mmbt2222a m2a
    Text: DATA SHEET MMBT2222A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch mm FEATURES .119(3.00) .110(2.80) .103(2.60) .047(1.20) • Collector current IC = 600mA • Pb free product are available : 99% Sn above can meet Rohs


    Original     		PDF MMBT2222A 600mA MIL-STD-202G, OT-23, M2A MARKING SOT-23 1N914 MMBT2222A MARKING M2A SOT-23 sot23 m2a mmbt2222a m2a

    2N117

    Abstract: 2N118 2N119 2N11R Cmd 2026 B-IA8 Transistor hall 2S50 9w9w knb 1532
    Text: MIL-S-19500/2B U June 196S SUpEWEDfNG MfL-S-19500/2A 28 May 1963 MfL-S-19500/35B NAVY 3 January 1966 (See 6.2. ) MILITARY SEMICONDUCTOR SPECIF’fCATfON DE VfCE, TRANSISTOR, TYPES 2N117. 2N118, NPN, .WLICON, AND 2N119 LOW-POWER This specification ie ma.~tory


    Original     		PDF MIL-S-19500/2B MfL-S-19500/2A MfL-S-19500/35B 2N117. 2N118, 2N119 2NI17 2N117 2N118 2N119 2N11R Cmd 2026 B-IA8 Transistor hall 2S50 9w9w knb 1532

    847C

    Abstract: 848B BC846 BC847 BC848 BC849 BC850 C846a c847b 849B
    Text: BC846,BC847,BC848,BC849,BC850 SERIES NPN GENERAL PURPOSE TRANSISTORS 30/45/65 Volts VOLTAGE 225 mWatts CURRENT FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • In compliance with EU RoHS 2002/95/EC directives


    Original     		PDF BC846 BC847 BC848 BC849 BC850 100mA 2002/95/EC OT-23, MIL-STD-750, 83-FEB 847C 848B C846a c847b 849B

    847C

    Abstract: 848B BC846 BC847 BC848 BC849 BC850
    Text: BC846,BC847,BC848,BC849,BC850 SERIES NPN GENERAL PURPOSE TRANSISTORS 30/45/65 Volts VOLTAGE 225 mWatts CURRENT SOT- 23 Unit: inch mm FEATURES • General purpose amplifier applications .056(1.40) • Pb free product are available : 99% Sn above can meet Rohs


    Original     		PDF BC846 BC847 BC848 BC849 BC850 100mA OT-23, 846erefore, 847C 848B

    847C

    Abstract: BC846W BC847W BC848W BC849W BC850W
    Text: DATA SHEET BC846W,BC847W,BC848W,BC849W,BC850W SERIES NPN GENERAL PURPOSE TRANSISTORS 30/45/65 Volts VOLTAGE 150 mWatts CURRENT SOT-323 Unit: inch mm FEATURES • NPN epitaxial silicon, planar design .087(2.2) .070(1.8) • Collector current IC = 100mA • Both normal and Pb free product are available :


    Original     		PDF BC846W BC847W BC848W BC849W BC850W OT-323 100mA OT-323, MIL-STD-202, 846AW 847C

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET BC846,BC847,BC848,BC849,BC850 SERIES NPN GENERAL PURPOSE TRANSISTORS 30/45/65 Volts VOLTAGE 225 mWatts CURRENT SOT- 23 Unit: inch mm FEATURES • General purpose amplifier applications .056(1.40) • Both normal and Pb free product are available :


    Original     		PDF BC846 BC847 BC848 BC849 BC850 100mA OT-23,

    harris transistors

    Abstract: D40D1 D0407 D40-D
    Text: HARRIS SEMICOND SECTOR SbE D • 43G2271 00407bM 4^7 « H A S D40D Series File Number 2334 -V-33-Oe 1-Ampere Silicon N-P-N Power Transistors Complementary to the D41D Series Features: • High free-alr power dissipation • Low collector saturation voltage 0.5V typ. @ 1.0A Iq


    OCR Scan     		PDF 43G2271 00407bM -V-33-Oe O-202AB D40D-series D40D1 D40D2, D40D2 D40D5, harris transistors D0407 D40-D

    TRANSISTOR LD30

    Abstract: KJ01 ctm 2s rilg u421u
    Text: SDE J> D 68 IIFC 4A2bflflfl 0000438 75*3 U421, U422, U423, U424, U425, U426 7 - 3 1- 2 INTER F E T CORP DUAL N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • VERY HIGH INPUT IMPEDANCE DIFFERENTIAL AMPLIFIERS * ELECTROMETERS Absolute maximum ratings at 25°C freo-alr temperature.


    OCR Scan     		PDF Vdg-10to20V, TRANSISTOR LD30 KJ01 ctm 2s rilg u421u

    Untitled

    Abstract: No abstract text available
    Text: P ow er Transistors HARRI S S E M I C O N D S E CT OR D40D Series 27E D • M302271 GQ2G27b 3 ■¡HAS • File Number 15.2 " 1 3 3 -0 5 - 1-Ampere Silicon N-P-N Power Transistors Com plem entary to the D41D Series TERMINAL DESIGNATIONS Features: • High free-alr power dissipation


    OCR Scan     		PDF M302271 GQ2G27b D40D-series

    2N1420

    Abstract: 2N956 2n161 2N1507 2N956 TEXAS INSTRUMENTS 2N731
    Text: TYPES 2N731, 2N956, 2N1420, 2N1S07, N-P-N SILICON TRANSISTORS ¿ U t » ' ? J . U n - B U L L E T IN NO. DL-S 6 9 3 4 7 1 , MAY 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for Amplifier, Switching and Oscillator Applications


    OCR Scan     		PDF 2N731, 2N956, 2N1420, 2N1S07, 2N717, 2N718, 2N718A, 2N730, 2N956 2N1420 2n161 2N1507 2N956 TEXAS INSTRUMENTS 2N731