Untitled
Abstract: No abstract text available
Text: Photo transistors KDT-3001A Unit : mm DIMENSIONS The KDT-3001A is a high-sensitivity NPN silicon phototransistor mounted in φ3mm(T-1) all plastic mold type. This photo transistor is both compact and easy to mount. FEATURES • φ3mm(T-1) all plastic mold type
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KDT-3001A
KDT-3001A
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Advanced Schottky Family
Abstract: No abstract text available
Text: fax id: 7250 Mearmation Parameter Measurement Information Features • Function, pinout, speed, and drive compatible with F Logic • All products capable of live insertion • All 3.3V products are 5V tolerant • All products meet FCT Logic JEDEC Standard No. 8A
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OPTIMOS
Abstract: OPTIMOS TRANSISTOR SPP80N06S2L-07
Text: Saber Libraries for OptiMOS Power Transistors Models provided by Infineon are not warranted by Infineon as fully representing all the specifications and operating characteristics of the semiconductor product to which the model relates. The models describe the characteristics of typical devices. In all cases, the
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500ms
SPD14N06S2
OPTIMOS
OPTIMOS TRANSISTOR
SPP80N06S2L-07
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coolmos pspice model power
Abstract: CoolMOS power ic CoolMOS Power Transistor CoolMOS analyses SPP20N60S5 500 coolmos
Text: PSpice Libraries for CoolMOS Power Transistors Models provided by Infineon are not warranted by Infineon as fully representing all the specifications and operating characteristics of the semiconductor product to which the model relates. The models describe the characteristics of typical devices. In all cases, the
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SIPC69N60C3
Abstract: sipc01n80c2 SPA11N60C3 equivalent SIPC26N80C3 SPW20N60S5 equivalent SIPC14N60C3 SIPC16N80C3 SPA03N60S5 SPP11N60S5 equivalent CoolMOS Power Transistor
Text: Saber Libraries for CoolMOS Power Transistors Models provided by Infineon are not warranted by Infineon as fully representing all the specifications and operating characteristics of the semiconductor product to which the model relates. The models describe the characteristics of typical devices. In all cases, the
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tPA20N60C3
SPB20N60C3
SPP20N60C3
SPW20N60C3
SIPC26N60C3
SPW47N60C3
SIPC69N60C3
OT223
SPNA02N80C2
SIPC01N80C2
SIPC69N60C3
sipc01n80c2
SPA11N60C3 equivalent
SIPC26N80C3
SPW20N60S5 equivalent
SIPC14N60C3
SIPC16N80C3
SPA03N60S5
SPP11N60S5 equivalent
CoolMOS Power Transistor
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pspice high frequency mosfet
Abstract: thermal simulation of IC package BSO604NS2 pspice high frequency transistor OPTIMOS TRANSISTOR
Text: PSpice Libraries for OptiMOS n-Channel Power Transistors Models provided by Infineon are not warranted by Infineon as fully representing all the specifications and operating characteristics of the semiconductor product to which the model relates. The models describe the characteristics of typical devices. In all cases, the
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all mosfet equivalent book
Abstract: spd30p06p SPD30P06P equivalent SPU30P06P
Text: PSpice Libraries for p-Channel Power Transistors Models provided by Infineon are not warranted by Infineon as fully representing all the specifications and operating characteristics of the semiconductor product to which the model relates. The models describe the characteristics of typical devices. In all cases, the
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OPTIMOS TRANSISTOR
Abstract: OPTIMOS BSO604NS2
Text: PSpice Libraries for OptiMOS n-Channel Power Transistors Models provided by Infineon are not warranted by Infineon as fully representing all the specifications and operating characteristics of the semiconductor product to which the model relates. The models describe the characteristics of typical devices. In all cases, the
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picoammeter
Abstract: qasd 12134 wlr Series sequential logic circuit experiments
Text: Definition of Terms DC Characteristics Currents Positive current is defined as conventional current flow into a device Negative current is defined as current flow out of a device All current limits are specified as absolute values Voltages All voltages are referenced to the ground pin All
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MILSTD-883C
TM-3015
picoammeter
qasd
12134
wlr Series
sequential logic circuit experiments
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Untitled
Abstract: No abstract text available
Text: CY7C1360A/GVT71256D36 CY7C1362A/GVT71512D18 PRELIMINARY 256K x 36/512K x 18 Pipelined SRAM and a 2-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input CLK . The synchronous inputs include all addresses, all data inputs, address-pipelining
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CY7C1360A/GVT71256D36
CY7C1362A/GVT71512D18
36/512K
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CY7C1360A1-150AC
Abstract: CY7C1362A1 GVT71512DA18
Text: CY7C1360A1/GVT71256DA36 CY7C1362A1/GVT71512DA18 PRELIMINARY 256K x 36/512K x 18 Pipelined SRAM eral circuitry and a 2-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input CLK . The synchronous inputs include all addresses, all data inputs, address-pipelining
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CY7C1360A1/GVT71256DA36
CY7C1362A1/GVT71512DA18
36/512K
CY7C1360A1-150AC
CY7C1362A1
GVT71512DA18
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CLP212s
Abstract: ICS Sensors 1220 FT 147 M 78215 T0218 T0247 T092 ft 103 CLP212T 78315
Text: THE MAX CLIP SYSTEM ™ THE THE PROPRIETARY PROPRIETARY THERMAL THERMAL MANAGEMENT MANAGEMENT SOLUTION SOLUTION FOR FOR ALL ALL POWER POWER COMPONENTS COMPONENTS AAVID THERMALLOY ONE COOL IDEA AFTER ANOTHER THE MAX CLIP SYSTEM™ FOR POWER TRANSISTORS How do you optimize the thermal management of power transistors while saving labor and costs?
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CY7C1381B
Abstract: CY7C1381BV25 CY7C1383B CY7C1383BV25
Text: 1 CY7C1381BV25 CY7C1383BV25 PRELIMINARY 512K x 36 / 1 Mb x 18 Flow-Thru SRAM Features burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input CLK . The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (CE), Burst Control Inputs (ADSC, ADSP, and ADV), Write Enables (BWa, BWb, BWc,
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CY7C1381BV25
CY7C1383BV25
CY7C1381B
CY7C1381BV25
CY7C1383B
CY7C1383BV25
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Insulated Gate Bipolar Transistors
Abstract: igbt transistors IGBT ixys igbt
Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode 2000 IXYS All rights reserved B2 - 1
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FLUKE 29 series II multimeter
Abstract: fluke 29 II
Text: CNX 3000 Wireless Multimeter Users Manual August 2012 2012 Fluke Corporation. All rights reserved. Specifications are subject to change without notice. All product names are trademarks of their respective companies. LIMITED WARRANTY AND LIMITATION OF LIABILITY
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Untitled
Abstract: No abstract text available
Text: CASE OUTLINES OF LEAD FORMED SMALL SIGNAL TRANSISTORS • All of Sanyo lead formed small signal transistor case outlines are illustrated below. • All dimensions are in mm, and dimensions which are not followed by min. or max. are represented by typical values.
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019A/2019B
2034/2034A
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4024B
Abstract: 4024B with truth table 4000B U304
Text: R&E 4024B INTERNATIONAL, INC. CMOS 7-STAGE BINARY COUNTER FEATURES ♦ ♦ ♦ ♦ ♦ 7 Fully Static Stages Buffered Outputs Available from All Stages Common Reset Line 8 MHz Counting Rate @ lOVdc All Inputs Buffered CONNECTION DIAGRAM all packages v dd nc
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4024B
4024B
4024B with truth table
4000B
U304
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226AA
Abstract: T0-226AA T0236AB T0226AA
Text: Sm all-Signal Small-Signal DMOS Transistors % T0-236AB SOT-23 T0-226AA (TO-92) 219
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T0-236AB
OT-23)
T0-226AA
226AA
T0-226AA
T0236AB
T0226AA
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sot36
Abstract: rohm surface mounted transistor series free all transistor equivalent book
Text: Introduction Introduction This data book provides data sheets for all surface mount transistors that are manufactured by ROHM Corporation. All transistors are manufactured with ROHM’s unique technology that provides a class of devices that are highly reliable. They are extremely compact to allow for high density mounting
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CMBTA13
Abstract: CMBTA14
Text: L CMBTA13 CMBTA14 N -P -N SM ALL-SIGN AL DARLINGTON TRANSISTORS N -P-N transistors PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMBTA13 = 1M CMBTA14 = IN _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BA SE 2 = EM ITTER 3 = C O LLEC TO R 2.6 2.4
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CMBTA13
CMBTA14
CMBTA13
CMBTA14
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TRANSISTORS
Abstract: 2SA POWER TRANSISTORS DIGITAL TRANSISTORS
Text: Introduction Introduction This data book provides data sheets for all leaded transistors that are manufactured by R O H M Co.,Ltd. All transistors are manufactured with R O H M ’s unique technology that provides a class of devices that are highly reliable. They are extremely compact to allow for high density mounting
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MA-406 8.0000M-C3
Abstract: No abstract text available
Text: ill ÆSj ra?MrtriL V u.Ajm-mm S micmsemj Comm erce Drive s r s s s ^ 18936-1013 s o i 332 RF & MICROWAVE TRANSISTORS UHF SMALL SIGNAL HtGH FT • ■5,5 GHï VfcHY LOW NCISfc ALL GOLD ME': ALLI2E0 HERMETIC PACKAGE PâN CONNECTIONS DESCRIPTION Ttw SOI 332 is an all gold met&iltefid NPN silicon
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smd npn 2n2222
Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200
Text: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.
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2PC1815L
2PC1815
10xx0.
7Z88986
smd npn 2n2222
bf471
BSR62 equivalent
EQUIVALENT TRANSISTOR bc549c
transistor bf 175
transistor bc547 PH in metal detector
tunnel diode
BSY95A
BF470
BC200
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Untitled
Abstract: No abstract text available
Text: R&E 4024B INTERNATIONAL, INC CMOS 7-STAGE BINARY COUNTER FE A T U R E S ♦ ♦ ♦ ♦ ♦ C O N N E C TIO N D IA G R A M all packages 7 Fully Static Stages Buffered Outputs Available from All Stages Common Reset Line 8 M H z Counting Rate @ lO Vdc All Inputs Buffered
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4024B
4024B
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