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    ALL MOSFET VHF POWER AMPLIFIER Search Results

    ALL MOSFET VHF POWER AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd

    ALL MOSFET VHF POWER AMPLIFIER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    apt449a

    Abstract: APT9701 APT9702 hf class AB power amplifier mosfet uhf 200w mosfet mosfet HF amplifier APT9801 200W PUSH-PULL what is the drawback of operating system HF Amplifier 200w
    Text: Technical Brief APTB 981 Capabilities of Low-cost High Voltage RF Power MOSFETs at HF and VHF Richard Frey, P.E. Advanced Power Technology Inc. 405 SW Columbia St., Bend, Oregon, 97702 ABSTRACT Plastic power MOSFET transistors have found increasing acceptance in all fields of power electronic applications


    Original     		APT9701. ARF448A/B, APT9702. ARF449A/B APT9801. apt449a APT9701 APT9702 hf class AB power amplifier mosfet uhf 200w mosfet mosfet HF amplifier APT9801 200W PUSH-PULL what is the drawback of operating system HF Amplifier 200w PDF

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 3N201-3N203 DUAL GATE MOSFET VHF AMPLIFIER MAXIMUM RATINGS Rating Drain-source voltage Symbol Value Unit VDS 25 Vdc 30 Vdc 50 mAdc ±10 mAdc VDG1 Drain-gate voltage VDG2 Drain current ID IG1 Gate current IG2 Total device dissipation @ TA = 25°C


    Original     		3N201-3N203 MIL-PRF-19500, PDF

    rd70huf2

    Abstract: RD70 HUF2 RD70HUF w18 transistor MITSUBISHI RF POWER MOS FET rd70 2x500mA AN-VHF-049
    Text: < Silicon RF Power Semiconductors > RD70HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 70W 24.60 18.00 DESCRIPTION a' RD70 Lot HUF2 No-G ○ 6 9 a 7 8 3.63 3.10 3.61 2.40 3 4 2 1 RD70HUF2 13.50 ○ 8 Lot No-G 7 ○ 6 5 APPLICATION For output stage of high power amplifiers in VHF/UHF


    Original     		RD70HUF2 175MHz, 530MHz, RD70HUF2 75Wtyp, 530MHz 84Wtyp, 175MHz RD70 HUF2 RD70HUF w18 transistor MITSUBISHI RF POWER MOS FET rd70 2x500mA AN-VHF-049 PDF

    transistor D 1557

    Abstract: RD15HVF1 RD15HV D 1413 transistor MOSFET RF POWER TRANSISTOR VHF 703 MOSFET TRANSISTOR Semiconductor 1346 transistor transistor 45 f 123 UHF POWER mosfet 3w transistor d1 391
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz15W 520MHz,15W 3.2+/-0.4 1.3+/-0.4 3.6+/-0.2 2 9+/-0.4 1.2+/-0.4 0.8+0.10/-0.15 APPLICATION 1 2 3 For output stage of high power amplifiers in VHF/UHF


    Original     		RD15HVF1 175MHz15W 520MHz RD15HVF1 175MHz 520MHz transistor D 1557 RD15HV D 1413 transistor MOSFET RF POWER TRANSISTOR VHF 703 MOSFET TRANSISTOR Semiconductor 1346 transistor transistor 45 f 123 UHF POWER mosfet 3w transistor d1 391 PDF

    RD70 HUF2

    Abstract: W105 TRANSISTOR ML1 RD70HUF2
    Text: < Silicon RF Power MOS FET Discrete > RD70HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 70W 24.60 18.00 DESCRIPTION a' 0.60 2 FEATURES 3 RD70 Lot HUF2 No-G 6 9 a 4 3.61 2.40 3 2 1 6 5 RD70HUF2 13.50 Lot No-G 8 7 APPLICATION For output stage of high power amplifiers in VHF/UHF


    Original     		RD70HUF2 175MHz, 530MHz, RD70HUF2 RD70 HUF2 W105 TRANSISTOR ML1 PDF

    RD70HVF

    Abstract: RD70HV vhf power transistor 50W 175MHz70W MOSFET 2095 transistor 50w rf power transistor 520-MHz
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers


    Original     		RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz 520MHz RD70HVF RD70HV vhf power transistor 50W MOSFET 2095 transistor 50w rf power transistor 520-MHz PDF

    RD70HVF1

    Abstract: RD70HVF transistor d 1710 S 170 MOSFET TRANSISTOR vhf power transistor 50W 100OHM 50w rf power transistor d 2095 transistor MOSFET 2095 transistor
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers


    Original     		RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz 520MHz RD70HVF transistor d 1710 S 170 MOSFET TRANSISTOR vhf power transistor 50W 100OHM 50w rf power transistor d 2095 transistor MOSFET 2095 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE4150 UltraCMOS Low Frequency Passive Mixer with Integrated LO Amplifier • Ultra-high linearity Quad MOSFET array with integrated LO amplifier • Ideal for mobile radio and Up/down conversion applications • Low conversion loss


    Original     		PE4150 20-lead PE4150 PDF

    RD15HVF1-101

    Abstract: RD15HVF1 D 1413 transistor D1560 tc 1601 a rd15hvf transistor marking zg TRANSISTOR 2229 transistor D 1557 6015d
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE 3.2±0.4 3.6±0.2 9±0.4 1.2±0.4 2.5 2.5 For output stage of high power amplifiers in VHF/UHF


    Original     		RD15HVF1 175MHz520MHz 175MHz 520MHz RD15HVF1 RD15HVF1-101 D 1413 transistor D1560 tc 1601 a rd15hvf transistor marking zg TRANSISTOR 2229 transistor D 1557 6015d PDF

    VDD291

    Abstract: EK-4150-01 Ek41 PE4150 IDSD transmission line transformers passive mixer PE4150MLI
    Text: Product Specification PE4150 UltraCMOS Low Frequency Passive Mixer with Integrated LO Amplifier Product Description The PE4150 is an ultra-high linearity Quad MOSFET mixer with an integrated LO amplifier. The LO amplifier allows for LO drive levels of less than 0dBm to produce IIP3 values similar to


    Original     		PE4150 PE4150 15dBm VDD291 EK-4150-01 Ek41 IDSD transmission line transformers passive mixer PE4150MLI PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE4150 Product Description The PE4150 is an ultra-high linearity Quad MOSFET mixer with an integrated LO amplifier. The LO amplifier allows for LO drive levels of less than 0dBm to produce IIP3 values similar to a Quad MOSFET Array driven with a 15 dBm LO


    Original     		PE4150 PE4150 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE4150 Product Description The PE4150 is an ultra-high linearity Quad MOSFET mixer with an integrated LO amplifier. The LO amplifier allows for LO drive levels of less than 0dBm to produce IIP3 values similar to a Quad MOSFET Array driven with a 15 dBm LO


    Original     		PE4150 PE4150 PDF

    RD15HVF1

    Abstract: rd15hvf RD15HV 175mhz gp 845 100OHM mitsubishi rf RD15HVF1 UHF POWER mosfet 3w
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz15W 520MHz,15W DESCRIPTION OUTLINE RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica


    Original     		RD15HVF1 175MHz15W 520MHz RD15HVF1 175MHz 520MHz rd15hvf RD15HV 175mhz gp 845 100OHM mitsubishi rf RD15HVF1 UHF POWER mosfet 3w PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE4150 UltraCMOS Low Frequency Passive Mixer with Integrated LO Amplifier The PE4150 is an ultra-high linearity Quad MOSFET mixer with an integrated LO amplifier. The LO amplifier allows for LO drive levels of less than 0dBm to produce IIP3 values


    Original     		PE4150 PE4150 PDF

    all mosfet vhf power amplifier

    Abstract: VF175-225 RF GAIN LTD VF175 silicone paste mosfet vhf power amplifier mosfet amplifier class ab rf vf17 H101X CLASS AB MOSFET RF amplifier
    Text: VF175-225 175 W VHF Amplifier Designed for VHF TV broadcast transmitters, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability. • • • • • • 175 - 225 MHz 48 Volts Input/Output 50 Ω Pout : 175 W min


    Original     		VF175-225 Opera-225 40W267 all mosfet vhf power amplifier VF175-225 RF GAIN LTD VF175 silicone paste mosfet vhf power amplifier mosfet amplifier class ab rf vf17 H101X CLASS AB MOSFET RF amplifier PDF

    tda 2038

    Abstract: TDA3791 tda vertical IC tv crt tda 3658 dbx 2151 TDA8302 tda9854 TDA 3030 tda 2790 transistor BF960
    Text: Philips Semiconductors Selection guide Alphanumerical index ALPHANUMERICAL INDEX PAGE 80C528; 83C528 CMOS single-chip 8-bit microcontroller; l2C-bus 80C652; 83C652 CMOS single-chip 8-bit microcontroller; l2C-bus 44 50 83C654 CMOS single-chip 8-blt microcontroller; l2C-bus


    OCR Scan     		80C528; 83C528 80C652; 83C652 83C654 83CE654 84C44X; 84C64X; 84C84X 87C528 tda 2038 TDA3791 tda vertical IC tv crt tda 3658 dbx 2151 TDA8302 tda9854 TDA 3030 tda 2790 transistor BF960 PDF

    TDA2658

    Abstract: BB909B VARICAP DIODE IC SOUND 2026 TDA 2038 tda2593 application TDA3791 tda vertical IC tv crt tda3833 TDA4865 philips audio amplifier ic guide
    Text: Philips Semiconductors Selection guide Functional index PAGE TUNING/TUNER Tuning SAB6456; SAB6456T Sensitive 1 GHz divide-by-64/divide-by-256 switchable prescaler 1347 SAB8726 Sensitive 2.6 GHz divide-by-2 prescaler 1353 TOA8725T Antenna signal processor 3785


    OCR Scan     		SAB6456; SAB6456T SAB8726 OA8725T TSA5511 TSA5512 TSA5514 TSA5515T TSA5520; TSA5521 TDA2658 BB909B VARICAP DIODE IC SOUND 2026 TDA 2038 tda2593 application TDA3791 tda vertical IC tv crt tda3833 TDA4865 philips audio amplifier ic guide PDF

    transistors mos

    Abstract: No abstract text available
    Text: 3N212 Dual Gate Mosfet VHF Amplifier N-Channel - Depletion 26.98 Transistors MOS. Page 1 of 1 Enter Your Part # Home Part Number: 3N212 Online Store 3N212 Diodes Dual Gate Mosfet VHF Amplifier(N -Channel - Depletion) Transistors Integrated Circuits Optoelectronics


    Original     		3N212 3N212 com/3n212 transistors mos PDF

    3N211

    Abstract: Depletion
    Text: 3N211 Dual Gate Mosfet VHF Amplifier N-Channel - Depletion 8.59 Transistors MOSF. Page 1 of 1 Enter Your Part # Home Part Number: 3N211 Online Store 3N211 Diodes Dual Gate Mosfet VHF Amplifier(N -Channel - Depletion) Transistors Integrated Circuits Optoelectronics


    Original     		3N211 3N211 com/3n211 Depletion PDF

    RD70HVF1-101

    Abstract: RD70HVF1 RD70HVF 70w power amplifier rd70hvf1 60W VHF circuit RF amplifier
    Text: < Silicon RF Power MOS FET Discrete > RD70HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers DRAWING 25.0+/-0.3 applications.


    Original     		RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz Oct2011 RD70HVF1-101 RD70HVF 70w power amplifier rd70hvf1 60W VHF circuit RF amplifier PDF

    A 1469 mosfet

    Abstract: Pch MOS FET S 170 MOSFET TRANSISTOR 100OHM RD30HVF1 mosfet 800 v MITSUBISHI RF POWER MOS FET
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE DRAWING RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.


    Original     		RD30HVF1 175MHz RD30HVF1 175MHz A 1469 mosfet Pch MOS FET S 170 MOSFET TRANSISTOR 100OHM mosfet 800 v MITSUBISHI RF POWER MOS FET PDF

    RD15HVF1

    Abstract: RD15HVF1-101 100OHM RF Transistor s-parameter vhf transistor D 1557
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE DESCRIPTION RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica


    Original     		RD15HVF1 175MHz520MHz RD15HVF1 175MHz 520MHz RD15HVF1-101 100OHM RF Transistor s-parameter vhf transistor D 1557 PDF

    transistor D 1666

    Abstract: MITSUBISHI RF POWER MOS FET RD30HVF1 RD30HVF1-101 mos 1718 transistor A 564 rf power transistor rd30hvf1 A 1469 mosfet transistor D 1762 1633 MOSFET
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.


    Original     		RD30HVF1 175MHz RD30HVF1 175MHz RD30HVF1-101 transistor D 1666 MITSUBISHI RF POWER MOS FET RD30HVF1-101 mos 1718 transistor A 564 rf power transistor rd30hvf1 A 1469 mosfet transistor D 1762 1633 MOSFET PDF

    A 1469 mosfet

    Abstract: RD30HVF1 transistor 38W 1599 transistor 100OHM MITSUBISHI RF POWER MOS FET TRANSISTOR D 1785 transistor D 1666 transistor 38W 3 pin
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE DRAWING RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.


    Original     		RD30HVF1 175MHz RD30HVF1 175MHz A 1469 mosfet transistor 38W 1599 transistor 100OHM MITSUBISHI RF POWER MOS FET TRANSISTOR D 1785 transistor D 1666 transistor 38W 3 pin PDF