AL 108 TRANSISTOR Search Results

AL 108 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

AL 108 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SGS-1H0MS0N SD1457 IEL[ RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION P o u t = 75 W MIN. WITH 10.0 dB GAIN DESCRIPTION The SD1457 is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for FM VHF	OCR Scan	SD1457 SD1457	PDF
c5353 Abstract: Z11A Text: SGS-THOMSON IDOS BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11A . . . . . . V dss R dS{oi1 Id 50 V 0.055 a 27 A AVALANC HE RUG G EDNESS TECHNO LOG Y 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE HIGH CURR ENT CAPABILITY	OCR Scan	BUZ11A BUZ11A O-220 C23A90 C53530 c5353 Z11A	PDF
BC109 Abstract: bc107 BC 107 BC108 bc 230 BC178 BC179 bc 750 BC-1096 bc audio transistors Text: BC 107 BC 108 BC 109 SILICON PLANAR NPN LOV/ NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC 107, BC 108 and BC109 are silicon planar epitaxial NPN transistors in TO-18 metal case. They are suitable fo r use in driver stages, low noise input stages and signal processing circu its of television receivers.	OCR Scan	BC109 BC178 BC179. 100mA Jun108 bc107 BC 107 BC108 bc 230 BC179 bc 750 BC-1096 bc audio transistors	PDF
2SK1928 Abstract: No abstract text available Text: TOSHIBA 2SK1928 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOS Type rc-MOS II h iZ . High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - RiD S (O N ) = 0.7Q [Typ.) • High Forward Transfer Admittance	OCR Scan	2SK1928 ij100A/MS 2SK1928	PDF
2SK2314 Abstract: No abstract text available Text: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SK2314 DATA SILICON N CHANNEL MOS TYPE L 2- tt - M O S V (2SK2314) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE	OCR Scan	2SK2314 2SK2314) 100//A 2SK2314	PDF
UFN541 Abstract: ufn540 FN540 k96a UFN543 UFN542 FN541 Text: TH 0G10714 t UNITRODE CORP 9347963 UNITRODE 92D CORP POWER MOSFET TRANSISTORS 100 Volt, 0.085 Ohm N-Channel FEATURES • C o m p act Plastic Package • Fast Sw itching • Low Drive C urrent • Ease of Paralleling • No Second B reakdow n 10714 UFN540 UFN541	OCR Scan	0G10714 UFN540 UFN541 UFN542 UFN543 FN543 FN540 k96a UFN543 FN541	PDF
2SK2789 Abstract: No abstract text available Text: TOSHIBA 2SK2789 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2789 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in m m TO-220FL CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10.3MAX.	OCR Scan	2SK2789 to-22qfl	PDF
ZO 109 Abstract: BC 107 BC109 bc107 bc 109 BC108 bc 108 zo 107 X10-4 bc 230 Text: BC 107 BC 108 BC 109 SILICON PLANAR NPN LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC107, BC 108 and ESC 109 are silico n planar epitaxial NPN transistors in TO-18 metal case. They are suitable fo r use in driver stages, low noise input stages and signal processing circ u its of television receivers.	OCR Scan	BC109 BC177, BC178 BC179. ZO 109 BC 107 bc107 bc 109 BC108 bc 108 zo 107 X10-4 bc 230	PDF
lts 542 Abstract: UFN540 FN640 Text: POWER MOSFET TRANSISTORS U F N 5 4 0 U F N 5 4 1 100 Volt, 0.0 85 Ohm N-Channel U F N 5 4 2 U F N 5 4 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roaom and a high transconductance.	OCR Scan	UFN540 UFN541 UFN542 UFN543 lts 542 UFN540 FN640	PDF
TFK BC Abstract: TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330 Text: BC 107 • B C 1 0 8 - B C 109 BC 237 • BC 238 • BC 239 'W Silizium-NPN-Epitaxial -Planar NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen A p p lic a tio n s : AF pre and driver stages Features: Besondere Merkmale:	OCR Scan	BC108 BC109 TFK BC TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330	PDF
transistor itt 975 Abstract: BLX15 philips blx15 BY206 blx15 push pull hie bd135 PHILIPS 4312 amplifier Philips Application BLX15 TRANSISTOR blx15 4312 020 36640 Text: N AMER PHILIPS/DISCRETE bTE D • bbS3^31 002^574 b00 BLX15 IAPX J H.F./V.H.F. POWER TRANSISTOR Silicon n-p-n power transistor for use in industrial and military s.s.b. and c.w. equipment operating in the h.f. and v.h.f. band: • rated for 150 W P.E.P. at 1,6 M Hz to 28 MHz	OCR Scan	BLX15 transistor itt 975 BLX15 philips blx15 BY206 blx15 push pull hie bd135 PHILIPS 4312 amplifier Philips Application BLX15 TRANSISTOR blx15 4312 020 36640	PDF
Untitled Abstract: No abstract text available Text: 3QE » • 7 ^ 2 C 2 3 7 0D30734 H ■ ^ p 3 > °M £ fZ J SCS-THOMSON Ä 7# [M ^ m ie T T IM O tg S IR FK 4 H250 'T js S-THÖMSÖN N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE IR FK4H 250 V dss Ros on) Id 200 V 0 .02 1 Q 108 A . ■ . ■	OCR Scan	0D30734 SC04720 T-91-20 O-240) PC-029«	PDF
equalizer ic 5218 Abstract: mitsubishi 5218 M5226P Graphic Equalizer ic ic op 5218 5218 mitsubishi M5218 block diagram i3 processor Graphic equalizer circuit diagram graphic equalizer Text: MITSUBISHI SOUND PROCESSOR ICs M5226P/FP 5-ELEMENT GRAPHIC EQUALIZER 1C DESCRIPTION The M 5 2 2 6 is a 5-element graphic equalizer 1C best suited to audio systems. It has a built-in 5-element resonance circuits with transistor system and an output OP amp.	OCR Scan	M5226P/FP M5226 1000p 3900p C2Z11 4700p 1800p 156Hz 412Hz equalizer ic 5218 mitsubishi 5218 M5226P Graphic Equalizer ic ic op 5218 5218 mitsubishi M5218 block diagram i3 processor Graphic equalizer circuit diagram graphic equalizer	PDF
Tektronix 7603 Abstract: 109T2 43p transistor Tektronix 108T2 t2109 AL 108 transistor 7603 sonde de temperature Text: 10 8 T2 1 0 9 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA T R A N S IS T O R S N P N S IL IC IU M , M E S A D IF F U S E S ïfc Preferred device Dispositif recommandé • LF and HF large signal amplification Amplification BF ou H F grands signaux V v CEO	OCR Scan	CB-19 Tektronix 7603 109T2 43p transistor Tektronix 108T2 t2109 AL 108 transistor 7603 sonde de temperature	PDF

4C6 toroid Abstract: UNELCO TP1940 108 motorola transistor 4C6 ferrite iWatt FERRITE TOROID dss125 Text: MOTOROLA SC XSTRS/R F 4bE D • b3b72SH GQRS l b f l MOTOROLA 3 ■ MOTb T=3^ - SEMICONDUCTOR TECHNICAL DATA T P 1940 The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode 300 W, 50 V, 108 MHz N-CHANNEL MOS BROADBAND RF POWER FET	OCR Scan	b3b72SH TP1940 20Bias 4C6 toroid UNELCO TP1940 108 motorola transistor 4C6 ferrite iWatt FERRITE TOROID dss125	PDF
M5226 Abstract: mitsubishi 5218 ic m5226 ic op 5218 Graphic Equalizer ic equalizer ic 5218 M5218 5218 mitsubishi block diagram graphic equalizer 5218 a op amp Text: MITSUBISHI SOUND PROCESSOR ICs M5226P/FP 5-ELEMENT GRAPHIC EQUALIZER IC DESCRIPTION The M 5 2 2 6 is a 5-element graphic equalizer 1C best suited to audio systems. It has a built-in 5-element resonance circuits with transistor system and an output OP amp.	OCR Scan	M5226P/FP M5226 1000p 3900p 4700p 1800p IT270p 156Hz 412Hz mitsubishi 5218 ic m5226 ic op 5218 Graphic Equalizer ic equalizer ic 5218 M5218 5218 mitsubishi block diagram graphic equalizer 5218 a op amp	PDF
C67078-S1327-A3 Abstract: No abstract text available Text: BUZ 72 AL SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 72 AL 100 V 9A 0.25 Ω TO-220 AB C67078-S1327-A3 Maximum Ratings Parameter Symbol	Original	O-220 C67078-S1327-A3 C67078-S1327-A3	PDF
BUZ11A Abstract: No abstract text available Text: *57 SGS-THOMSON TYPE BUZ11A IH iO lM iQ O I B U Z 11 A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V dss R DS on Id 50 V < 0.055 a 27 A • TYPICAL R Ds(on) = 0.048 Q AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C	OCR Scan	BUZ11A BUZ11A	PDF
2SK2314 Abstract: 2-10P1B Text: TO SHIBA 2SK2314 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL MOS TYPE L2-? r-M O S V 2SK2314 INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TO R DRIVE 10.3MAX. APPLICATIONS	OCR Scan	2SK2314 428/iH, 2SK2314 2-10P1B	PDF
tp9383 Abstract: No abstract text available Text: MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA TP9383 The RF Line V H F P o w e r T ra n sisto r • • • • • • 2 150 W — 108 MHz VHF POW ER TRANSISTOR . . . d e sign e d for use in the new generation of V H F -F M broadcast transm itters operating	OCR Scan	TP9383 tp9383	PDF
118-136-MHz Abstract: M113 SD1224-2 TRANSISTOR bu 406 Text: m m u IRRFProduçts^ F Products ^ m -• Microsemi P ro g re s s P o w e re d b y T e c h no log y 140 Com merce Drive Montgomeryville, PA 18936-1013 18936-1013 Tel: 215 631-9840 o m 00/1 O O U l Z Z Q - Z RF & MICROWAVE TRANSISTORS 108.152MHz APPLICATIONS	OCR Scan	cni00y1 152MHz 175MHz SD1224-2 SD1224-2 118-136MHz 200mA 10rtiA 500mA 118-136-MHz M113 TRANSISTOR bu 406	PDF
900mhz-1800mhz rf frequency amplifier circuit Abstract: PNP UHF transistor HFA3046 uhf transistor amplifier complementary npn-pnp PNP transistor 263 NPN transistor mhz s-parameter silicon bipolar transistor rf power amplifier UHF pnp transistor HFA3096 Text: Harris Semiconductor No. AN9315.1 Harris Linear November 1996 RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Author: Sang-Gug Lee Introduction HFA3046 This application note is focused on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays.	Original	AN9315 HFA3046, HFA3096, HFA3127, HFA3128 HFA3046 HFA3046/3096/3127/3128 800MHz 2500MHz) 10MHz 900mhz-1800mhz rf frequency amplifier circuit PNP UHF transistor HFA3046 uhf transistor amplifier complementary npn-pnp PNP transistor 263 NPN transistor mhz s-parameter silicon bipolar transistor rf power amplifier UHF pnp transistor HFA3096	PDF
Untitled Abstract: No abstract text available Text: FZ 600 R 06 KF 3 Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 600 V 600 A 1 ms 1200 A O Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,057 °C/W 2200 W V ge 20 V Inversdiode	OCR Scan	0DD202fl	PDF
ic 741c operational amplifier Abstract: ad520j Text: G E N E R A L DESCRIPTION The A N A L O G DEVICES A D 108, A D 2 0 8 and A D 3 0 8 are precision operational am plifiers fabricated on a single silicon chip. The use o f super beta transistors in the in p u t stage, along w ith improved process co n tro l, results in guaranteed in p u t	OCR Scan	AD502J, AD503J, AD505J, AD513J, AD520J, AD530J, ic 741c operational amplifier ad520j	PDF

AL 108 TRANSISTOR Search Results

AL 108 TRANSISTOR Result Highlights (5)

AL 108 TRANSISTOR Datasheets Context Search

Untitled

c5353

BC109

2SK1928

2SK2314

UFN541

2SK2789

ZO 109

lts 542

TFK BC

transistor itt 975

Untitled

equalizer ic 5218

Tektronix 7603

4C6 toroid

M5226

C67078-S1327-A3

BUZ11A

2SK2314

tp9383

118-136-MHz

900mhz-1800mhz rf frequency amplifier circuit

Untitled

ic 741c operational amplifier