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    1N914

    Abstract: M28F256 PDIP32 PLCC32 memory write protect m28f512
    Text: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE IN 1s RANGE


    Original     		PDF M28F256 PLCC32 PDIP32 M28F256 1N914 PDIP32 PLCC32 memory write protect m28f512

    M28F512

    Abstract: PDIP32 PLCC32 1N914 m28f512-25
    Text: M28F512 512 Kbit 64Kb x8, Bulk Flash Memory 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical 10,000 ERASE/PROGRAM CYCLES


    Original     		PDF M28F512 PLCC32 PDIP32 M28F512 PDIP32 PLCC32 1N914 m28f512-25

    M28F512

    Abstract: PDIP32 PLCC32
    Text: M28F512 512 Kbit 64Kb x8, Bulk Flash Memory DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical


    Original     		PDF M28F512 PLCC32 PDIP32 M28F512 100ns 120ns 150ns 200ns AI00549 PDIP32 PLCC32

    1N914

    Abstract: M28F512 PDIP32 PLCC32
    Text: M28F512 512K 64K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE


    Original     		PDF M28F512 M28F512 1N914 PDIP32 PLCC32

    M28F512-25

    Abstract: 1N914 M28F512 PDIP32 PLCC32
    Text: M28F512 512K 64K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE


    Original     		PDF M28F512 M28F512 M28F512-25 1N914 PDIP32 PLCC32

    M28F512

    Abstract: M28F512-25
    Text: M28F512 512K 64K x 8, Chip Erase FLASH MEMORY DATA BRIEFING FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE


    Original     		PDF M28F512 PDIP32 PLCC32 M28F512 100ns 120ns 150ns 200ns M28F512-25

    M28F512

    Abstract: PDIP32 PLCC32
    Text: M28F512 512K 64K x 8, Bulk Erase FLASH MEMORY DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 100µA max


    Original     		PDF M28F512 M28F512 PDIP32 100ns 120ns 150ns 200ns AI00549 PDIP32 PLCC32

    1N914

    Abstract: M28F512 PDIP32 PLCC32
    Text: M28F512 512K 64K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE


    Original     		PDF M28F512 M28F512 1N914 PDIP32 PLCC32

    1N914

    Abstract: M28F256 PDIP32 PLCC32 memory write protect m28f512
    Text: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE IN 1s RANGE


    Original     		PDF M28F256 PLCC32 PDIP32 M28F256 1N914 PDIP32 PLCC32 memory write protect m28f512

    M28F512-25

    Abstract: 1N914 M28F512 FCA3
    Text: S G S -T H O M S O N r= T ^ 7 # . M28F512 [t£ Ü B @ Ë lL l5 g Îfii* © l]© i 512K (64Kx 8, Chip Erase FLASH MEMORY • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Standby Current: 200jiA Max ■ 10,000ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE


    OCR Scan     		PDF M28F512 000ERASE/PROGRAM M28F512 PDIP32 DDb6731 PLCC32 PLCC32 M28F512-25 1N914 FCA3

    Untitled

    Abstract: No abstract text available
    Text: r Z J S G S -T H O M S O N M28F512 512K 64K x 8, Chip Erase FLASH MEMORY • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Standby Current: 200|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMMING TIME 10ns


    OCR Scan     		PDF M28F512 PDIP32 PLCC32 M28F512

    Untitled

    Abstract: No abstract text available
    Text: C T ^7# S G S 'T H O M S O N [ID Ä IIL IIg T O ® * ! M 28F512 512K 64K x 8, Chip Erase FLASH MEMORY • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Standby Current: 100|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMING TIME 10|is


    OCR Scan     		PDF 28F512 M28F512 PLCC32

    1N914

    Abstract: M28F512 T237
    Text: S G S -T H O M S O N M28F512 M [f3 @ !!i© W ;i R î] S l 512K (64K x 8, Chip Erase) FLASH MEMORY • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Standby Current: 100|jA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMING TIME 10|is


    OCR Scan     		PDF M28F512 M28F512 7TBT537 PLCC32 PLCC32 1N914 T237

    m28f512-25

    Abstract: No abstract text available
    Text: M28F512 512 Kbit 64Kb x8, Bulk Erase Flash Memory • ■ ■ ■ ■ ■ 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10jis typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION - Stand-by Current: 5(iA typical


    OCR Scan     		PDF M28F512 10jis M28F512 PLCC32 m28f512-25