AHW-25
Abstract: AHW-10 AHW-250 strong 5202 AHW 19 AHW 25
Text: AHW Series Gold Aluminum Housed Wirewound Resistors MERITEK FEATURES • High power rating, small size and ultra precision. • Standard winding &non-inductive winding types. • High stability, strong construction. ELECTRICAL SPECIFICATION Characteristics
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JIS-C-5202
200ppm/
DC500V
AC3000V
60Sec.
AHW-25
AHW-10
AHW-250
strong 5202
AHW 19
AHW 25
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Wirewound Resistors 300w
Abstract: AHW-10 AHW-25
Text: AHW Series Gold Aluminum Housed Wirewound Resistors MERITEK FEATURES • High power rating, small size and ultra precision. • Standard winding &non-inductive winding types. • High stability, strong construction. ELECTRICAL SPECIFICATION Characteristics
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JIS-C-5202
200ppm/
DC500V
AC3000V
AHW-50
AHW-100
Wirewound Resistors 300w
AHW-10
AHW-25
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FMU 860
Abstract: DZ45 d8107 4b55 E8-10 C708 CD05 x0b5 CI 4553 3i54
Text: ?:*8/</>=: +@=0=+AB*0 CD05.*:+",% !"#$%&'()*+%,+-./0121+!34+35678*1 95:+7)+05+$,+;<+':=>1</11/5> @*1D:/)0/5> E8$)MP5B3<.$&0$.)MID)60#8)0"#$%&'*)(&07$&)!;)0.) ($.0%"$():,&)3>)?-0#.@.)HFHI),&)EHI)#&'".10.0,") '//*0+'#0,".4)!#)0"#$%&'#$.)');F)*'.$&)60#8)'")$*$+#&,<
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uPD70F3561
Abstract: uPD70F35 V850E2/FK4-H
Text: dfgdfg Cover Data Sheet 32 V850E2/FK4-H 32-bit Single-Chip Microcontroller µPD70F3561 Renesas Electronics www.renesas.com R01DS0143ED0100 2013-05-24 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change
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V850E2/FK4-H
32-bit
PD70F3561
R01DS0143ED0100
EASE-DS-0038-1
uPD70F3561
uPD70F35
V850E2/FK4-H
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uPD70F35
Abstract: UPD70F40 R01DS0142ED0100
Text: dfgdfg Cover Data Sheet 32 V850E2/FL4 32-bit Single-Chip Microcontroller µPD70F3559 µPD70F4011 µPD70F3560 µPD70F4012 Renesas Electronics www.renesas.com R01DS0142ED0100 2013-05-24 Notice 1. All information included in this document is current as of the date this
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V850E2/FL4
32-bit
PD70F3559
PD70F4011
PD70F3560
PD70F4012
R01DS0142ED0100
uPD70F35
UPD70F40
R01DS0142ED0100
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uPD70F3564
Abstract: V850E2/FL4-H
Text: dfgdfg Cover Data Sheet 32 V850E2/FL4-H 32-bit Single-Chip Microcontroller µPD70F3564 Renesas Electronics www.renesas.com R01DS0144ED0100 2013-05-24 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change
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V850E2/FL4-H
32-bit
PD70F3564
R01DS0144ED0100
EASE-DS-0032-1
uPD70F3564
V850E2/FL4-H
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uPD70F3558
Abstract: V850E2 FK4 uPD70F3555 renesas v850e2 hardware manual FK4-G V850E2/FK4 uPD70F35 v850e2 Fx4
Text: dfgdfg Cover Data Sheet 32 V850E2/FK4 V850E2/FK4-G 32-bit Single-Chip Microcontroller µPD70F3555 µPD70F4007 µPD70F3556 µPD70F4008 µPD70F3557 µPD70F4009 µPD70F3558 µPD70F4010 µPD70F3592 Renesas Electronics www.renesas.com R01DS0141ED0100 2013-05-24
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V850E2/FK4
V850E2/FK4-G
32-bit
PD70F3555
PD70F4007
PD70F3556
PD70F4008
PD70F3557
PD70F4009
PD70F3558
uPD70F3558
V850E2 FK4
uPD70F3555
renesas v850e2 hardware manual
FK4-G
V850E2/FK4
uPD70F35
v850e2 Fx4
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44-PIN
Abstract: LH5PV16256
Text: LH5PV16256 CMOS 4M 256K x 16 Pseudo-Static RAM FEATURES DESCRIPTION • 262,144 words × 16 bit organization The LH5PV16256 is a 4M bit Pseudo-Static RAM with a 262,144 words × 16 bit organization. • Power supply: +3.0 ± 0.15 V • Access time: 120 ns (MAX.)
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LH5PV16256
LH5PV16256
44-PIN
I/O15
I/O14
I/O13
I/O12
I/O11
I/O10
44TSOP
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ssl 110 sn
Abstract: t1c4 SMAJ SERIES io SMA-J RL-209 RL209 8MAJ24A s3 86A uc 1604
Text: SMAJ SERIES FEATURES l lwngto2OoVPfw For aurtaa mourMod appllm l Raltabbbw~ l -amI ~-pbElctochnlque Phslklluuwhu underwaoa Labmmy lhrnmaMQ claWkMM OlVO 0 HIgIl toinpwrha aokMng: 250 410 SocQndr rr trrwulr l TVprcslblesath&nluA&ow10V l l Fa~respormethw:typkAlyb+rthMl.Op
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ow10V
13oCP
16OClr
ssl 110 sn
t1c4
SMAJ SERIES io
SMA-J
RL-209
RL209
8MAJ24A
s3 86A
uc 1604
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Untitled
Abstract: No abstract text available
Text: TPS77901, TPS77918, TPS77925, TPS77930 250-mA LDO REGULATOR WITH INTEGRATED RESET IN A MSOP8 PACKAGE SLVS283D – MARCH 2000 – REVISED OCTOBER 2000 D D D D D D D D D D Open Drain Power-On Reset With 220-ms Delay 250-mA Low-Dropout Voltage Regulator Available in 1.8-V, 2.5-V, 3-V, Fixed Output
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TPS77901,
TPS77918,
TPS77925,
TPS77930
250-mA
SLVS283D
220-ms
TPS77930)
TPS77918)
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35L004006416
Abstract: NexFlash Technologies
Text: NexFlash Technologies, Inc. CONFIDENTIAL Preliminary Specification 35L004006416 Specification, Rev - Embedded High Speed NexFLASH Memory Low Power 1-Mbit 64K x 16 Embedded FN-FN FLASH Memory Features • FN-FN FLASH Technology • 0.35um, 3-well CMOS Technology
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35L004006416
64-byte
16-bit
NexFlash Technologies
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MARKING AHU
Abstract: 3 pin reset ic SOT23 marking codes MV SOT23 MXD1810 MXD1813 MXD1815 MXD1818 MARKING ael CC SOT23-3
Text: 19-2243; Rev 0; 10/01 Low-Power µP Reset Circuits in 3-Pin SC70/SOT23 The MXD1810–MXD1813/MXD1815–MXD1818 family of microprocessor µP reset circuits monitor power supplies in µP and digital systems. These devices provide excellent circuit reliability and low cost by eliminating
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SC70/SOT23
MXD1810
MXD1813/MXD1815
MXD1818
MXD1815
MXD1818)
MXD1813)
100ms
MXD1813/
MARKING AHU
3 pin reset ic
SOT23 marking codes
MV SOT23
MXD1813
MARKING ael
CC SOT23-3
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MARKING AHW
Abstract: AHW SOT23 MD1818 MXD1810 MXD1813 MXD1815 MXD1818 mark ahu ahW MARKING
Text: 19-2243; Rev 1; 12/05 Low-Power P Reset Circuits in 3-Pin SC70/SOT23 The MXD1810–MXD1813/MXD1815–MXD1818 family of microprocessor μP reset circuits monitor power supplies in μP and digital systems. These devices provide excellent circuit reliability and low cost by eliminating
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SC70/SOT23
MXD1810
MXD1813/MXD1815
MXD1818
MXD1815
MXD1818)
MXD1813)
100ms
MXD1813/
MARKING AHW
AHW SOT23
MD1818
MXD1813
mark ahu
ahW MARKING
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RK-71
Abstract: ctsk UO-35
Text: rEHEPATOPHbm nEHTOfl PENTODE rK-71 reHepaTopHbiti neHTOfl TK-71 npe,qHa3HaMeH r e H e p u p o B a H u n K o n e 6 aHw /i m y c u n e H u n m o li^ h o c tm b C T am iO H apH bix p a flM O T e x H M H e cK M x y c T a H O B K a x . OBLIQUE CBEflEHMfl K a T O fl -
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lK-71
TK-71
RK-71
ctsk
UO-35
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HM65256BLP-10
Abstract: dp - 20t DG250 HM65256BFP-12T HM65256B HM65256BFP-10T HM65256BFP-15T HM65256BFP-20T HM65256BLFP-10T HM65256BLFP-12T
Text: HM65256B Series 5.0 V S u p p ly 32,768-w ord x 8-bit H ig h S p e e d P s u e d o S ta tic R A M Features • Single 5 V ±10% • Access time — CE access time: 100/120/150/200 ns — Address access time: 50/60/75/100 ns (in static column mode) • Cycle time
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HM65256B
768-word
HM65256BLSP-10
HM65256BLSP-12
HM65256BLSP-15
HM65256BLSP-20
44rb203
A8-A14
44tbp03
HM65256BLP-10
dp - 20t
DG250
HM65256BFP-12T
HM65256BFP-10T
HM65256BFP-15T
HM65256BFP-20T
HM65256BLFP-10T
HM65256BLFP-12T
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FSP 30
Abstract: No abstract text available
Text: HM511666 Series Preliminary 65,536-Word x 16-Bit Dynamic RAM • DESCRIPTION HM511666JP Series The Hitachi HM511666 are CMOS dynamic RAM orga nized as 65,536-word x 16-bit. HM511666 have realized higher density, higher performance and various functions by
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HM511666
536-Word
16-Bit
16-bit.
HM511666
40-pin
FSP 30
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Untitled
Abstract: No abstract text available
Text: HM511666 Series Preliminary 65,536-Word x 16-Bit Dynamic RAM • DESCRIPTION HM511666JP Series The Hitachi HM511666 are CMOS dynamic RAM orga nized as 65,536-word x 16-bit. HM511666 have realized higher density, higher performance and various functions by
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HM511666
536-Word
16-Bit
HM511666JP
16-bit.
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applications of Mobile Train Radio Communication
Abstract: Sheriff
Text: ANTENEXK A Company that Achieves Excellence. A Product that delivers Quality and Performance. A message from o ur President,. A word about our future . We founded A N T E N E X in 1990 determined to deliver antenna products that yielded the ulti mate in value to the communications industry. Our
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HM514102
Abstract: No abstract text available
Text: HM514102B/BL Series 4,194,304-word x 1-bit Dynamic RAM T h e H itach i H M 5 1 4 1 0 2 B / B L is a C M O S d y n a m i c RAM o rg an ized 4 , 19 4 , 3 0 4 - w o r d x O rd erin g Inform ation l-b it. Type No. Access time HM514102BS/BLS-7 HM514102BS/BLS-8
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HM514102B/BL
304-word
HM514102BS/BLS-7
HM514102BS/BLS-8
300-mil,
20-pin
CP-20D)
400-mil,
ZP-20)
HM514102
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ls14
Abstract: delay line kappa
Text: SERIES L S 1 4 /L D S 1 4 LSTTL 1 4 -P IN 5-TAP LOW POWER SCHOTTKY DELAY LINE RECOMMENDED OPERATING CON DITIO NS M IN TYP MAX UNIT 4.75 2.0 5.00 5.25 V V V mA mA mA °C VC C S upply V o lta g e V|H H igh-Level In p u t V o lta g e FEATURES • A v a ila b le in A u to -ln s e rtab le (LS14)
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LS14/LDS14
14-PIN)
LDS14)
14-Pin
ls14
delay line kappa
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Untitled
Abstract: No abstract text available
Text: SERIES MHV H4 _ HIGH VOLTAGE CONNECTORS Description Contents SUHNER MHV connectors are coaxial miniature high voltage (MHV = Miniature High Voltage) connectors with 5 kV rms test voltage (mated pairs). The MHV connectors have a working voltage up
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MARKING AHW
Abstract: AHW MARKING CODE
Text: SHARP SHARP LH6P82Z1 •Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company. •When using the products covered herein, please observe the conditions written herein
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LH6P82Z1
TSOP48-P-1218
AA1046
CV537
LH6P82Z1,
MARKING AHW
AHW MARKING CODE
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EGH16-06
Abstract: No abstract text available
Text: EGH16 75A - i r a i w x : O u tlin e d r a w in g s * GENERAL-USE THYRISTOR • 4# ^ : F e a tu re s • i n C o m p r e s s i o n • S W /E contact type High voltage capability • Large d v /d t : A p p lic a tio n s 9 • #1 M o to r control applications
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EGH16
EGH1606
50HzjE3
50HzjE
19S24-Sy
EGH16-06
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HM514402
Abstract: 514402 HM514402BZ
Text: HM514402B/BL Series 1,048,576-word x 4-bit Dynamic RAM The H ita ch i H M 5 I4 4 0 2 B /B L is a C M O S dynam ic RAM o rg a n iz e d 1,0 4 8 , 5 7 6 - w o rd x O rd erin g Inform ation 4 - b it . H M 5 1 4 4 0 2 B /B L has r e a liz e d h ig h e r d e n s ity ,
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HM514402B/BL
576-word
20pin
20-pin
HM514402BS/BLS-7
HM514402BS/BLS-8
HM514402
514402
HM514402BZ
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