SF30JC10
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode W tm SF30JC10 O U TLIN E 100V 30A Feature • Tj=150°C • Tj=150°C • • Full Molded 7 [Æ -JU K • fîlR=1.0mA • Low Ir=1.0 itiA • if & f lÆ S Ê ê C U C C U • Resistance for thermal run-away • Dielectric Strength 2kV
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SF30JC10
Tc-10
SF30JC10
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Twin Diode W tm OUTLINE D8LC20UR 200V 8A Feature • m s 'ix • trr= 35ns • • Low Noise • trr=35ns • Full Molded 7 [Æ - JU K Main Use • Sw itching Regulator • Fly Wheel • 8 < B , O A , PsBfl • Hom e Appliance, Office Automation, Lighting
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D8LC20UR
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode W tm OUTLINE S20J C 10 100V 20A Feature • Tj=150°C • Tj=150°C • fîlR = 0 . 7 m A • High lo Rating • Low lR=0.7mA :u c < u • Resistance for thermal run-away Main Use • y -h P C .L C D t= ^ i • Secondary rectification for A dapter
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ld20u
Abstract: 5ld20u
Text: Super Fast Recovery Diode Twin Diode Wtm D5LD20U OUTLINE 200V 5A Feature • m s 'ix • L o w N oise • trr=35ns • trr= 3 5 n s • 7 [Æ - J U K • Full M o ld e d Main Use • S w itc h in g R eg u lator • Fly W heel • 8 < B , O A , PsBfl •
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D5LD20U
i50Hz
ld20u
5ld20u
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Untitled
Abstract: No abstract text available
Text: E R N 2 6 4 o o a • : Outline Drawings Units mm HIGH VOLTAGE FAST RECOVERY DIODE ■ W fi : Features • rÉSS6fiŒ.:*;i3E • ± i£ # H Αê' • ¥ ü * iê High voltage, high current Diffused type Flat package type ¿52 ; Applications ¿43 • -i > / <-9, T a-y/ ' 7 iJ-fr'TJl'
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50HzJE?
I95t/R89)
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SIH31
Abstract: FLT 26.000
Text: SIH31 R ( 1 o 5 a ) : O utline D raw ings GENERAL-USE RECTIFIER DIODE Features H ig h reverse v o lta g e c a p a b ility • Z .M S tu d m o u n te d : Applications • ' < y T ,) ~ B a t t e r y • c h a rg e rs B ru sh -less g e n e ra to rs • O th e rs .
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SIH31
SIH31
50HzjE3£
l95t/R
FLT 26.000
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TsE 151
Abstract: LR2000-A ERS03 ERS03-40 H160 T151 T760 T810 T930
Text: ERS03 1600A i Outline Drawings GENERAL IS E RECTIFIER DIODE Features • D iffu s e d -ju n c tio n • Flat p a cka g e typ e • E i i § ! : Applications • E le ctric ra ilw a y a n d ch e m ic a l use rectifie rs • V e h ic le use re ctifie rs •
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ERS03
16ooa)
ERS03-40
50HziE3Â
l95t/R89
TsE 151
LR2000-A
ERS03-40
H160
T151
T760
T810
T930
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Untitled
Abstract: No abstract text available
Text: Bridoft Otoà» -K S Q .I.P . Square In-line Package Input/Output fn-lin* Packaa« O U T L IN E D IM E N S IO N S S3WBD 6 0 0 V 2 .3 A • R A TIN G S $Ê3j'4t^/Ëfë Absolute Maximum Ratings À a js Item Symbol ig'S-gC fi« O perating J u n c tio n Tem perature
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50HzJE3Â
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Untitled
Abstract: No abstract text available
Text: Super Past Recovery Diode Single Diode OUTLINE DIMENSIONS D5L60 Case : fTO-220 600V 5A • il« a •SBJŒ •trr5 0 n s 2.7 ±a* • « ü iE 2 K V S ü I •PFC • sr b •TV+B. SS0E WWfem. RATINGS •jfcëfcfll:fcïE!Î& Absolute Maximum Ratings bE-Éj
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D5L60
fTO-220
50HzjE8Ã
50HzJE3Â
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Diode LT 442
Abstract: No abstract text available
Text: U ^yP -P z m t -K U tipe Super Fast Recovery Diode W l Single Diode • M 2 tH£E] D10L20U OUTLINE DIMENSIONS C ase : ITO -220 2 0 0 V 10 A n m •t r r 3 5 n s • y J L Æ -J L /K m s •S R ® m y u -T t^ iis • m m . OA. H8BJ1 •ilia * m m ti& m fa
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D10L20U
50HzjE
50HzjE3Â
Diode LT 442
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Untitled
Abstract: No abstract text available
Text: Axial Diode Single Diode • O U T L IN E D IM E N S IO N S S3VD 600V 3.5A ■ R A T IN G S Absolute Maximum Ratings iM n n @ Item Sym bol 4& 'Ut g n d iL s - A a t 0° - T y p e ^ N o . -^ S 3V 20 T s tg S t o r a g e T e m p e ra tu re
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Untitled
Abstract: No abstract text available
Text: *8?/kx Us<7 a—P^. SH* K U type Super Fast Recovery Diode Surface Mounting Device • O U T L IN E D IM E N S IO N S DE3L20U 200V 3A ■ R A TIN G S Absolute Maximum Ratings m Item a IE # Symbol S to ra g e Tem perature O perating J u n c tio n Tem perature
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DE3L20U
DE3L20U
50HzjE3£
10msj
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f20jc10
Abstract: F20JC
Text: Schottky Barrier Diode Twin Diode Wtm SF20JC10 OUTLINE 100V 20A Feature • Tj=150°C • Tj=150°C • 7 [Æ -J U K • fîlR = 0 .7 m A • Full Molded •if&flÆSÊêCUCCU • Resistance for thermal run-away • Dielectric Strength 2kV • Low lR=0.7mA
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SF20JC10
i50Hz
f20jc10
F20JC
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ic s1wb
Abstract: No abstract text available
Text: Dual In-line Package Bridge Diode • O U T L IN E D IM E N S IO N S S1WB A D/DB 600V 1A ■ R A T IN G S Absolute Maximum Ratings m a S ym b ol is # a s S to ra g e T e m p e ra tu re O p e ra tin g J u n c tio n T e m p e ra tu re -i±AsM ^M I± Average R ectified Forward C urre n t
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50HzJE3ê
ic s1wb
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Twin Diode W tm OUTLINE D8LD20U 200V 8A Feature • m s 'ix • Lo w Noise •7 • trr=35ns • trr=35ns • Full M olded [Æ -JU K Main Use • Sw itching Regulator • WMs OA, PsBfl • Fly W heel • • C om m unication, Factory Autom ation
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D8LD20U
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Untitled
Abstract: No abstract text available
Text: P - P Z & U - F Super Fast Recovery Diode Single Diode OUTLINE DIMENSIONS SF8L60 600V 8A •H U E •trr7 0 n s • m ± 7 i\ Æ - ib K •Â  Œ 2 K V S K E H U •RFC •SRSÌB •y u -m -o b •TV+B, • Æ tè fi RATINGS Absolute Maximum Ratings * B n
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SF8L60
50HzjEB*
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ma180
Abstract: EGN05 T151 X103 al012
Text: E G N 5 3 o a : Outline drawings G E N E R A L -U S E T H YR IST O R • t ir S : Features Compression contact type • tQJ±&1Ate • ftB E High voltage capability • B W f - :t '7 i/ E Ji# $ (d v / d t )a v' * # i ' Large dv/dt : Applications •i —
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EGN05
m247p
EGN05-
50HziEffiift
fct45
4i-i23i
l95t/R89
Shl50
ma180
T151
X103
al012
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200a liu
Abstract: EGL16 H125 X103 kj 004
Text: EGL16 150A : Outline drawings GENERAL-USE THYRISTOR : Features • Compression contact type • fiiS t/ I High voltage capability • (dv/dt) Large dv/dt : Applications • 9— Mot or control applications •t— Heat er control applications • Static switchs
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EGL16-
50HziE3i
I95t/R89)
200a liu
EGL16
H125
X103
kj 004
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ERG75
Abstract: T151 T760 T810 A23G
Text: ERG75 45A : Outline Drawings FAST RECOVERY DIODE Features • t — Pl aner chip • Soft recovery type • Stud mounted : Applications • Switching power supplies • 'f-av't— Free-wheel diode • Others. M axim um Ratings and Characteristics '• Absolute Maximum Ratings
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ERG75
ERG75
eBTB30Â
EaT05
I95t/R89)
T151
T760
T810
A23G
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PDF
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ERD51
Abstract: SID01 asj-111
Text: ERD51 ,SID01 9 a> : Outline Drawings GENERAL-USE RECTIFIER DIODE > Features + Glass passivated chip • » « ¡g L S fiW E C V R S M # '» » .' High non-repetitive peak reverse voltage (VRSM) fsm ) A '^ ^ v v High surge current capability : Applications
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ERD51
SID01
SID01
ERD51
asj-111
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DBF60
Abstract: DBF60C
Text: - KNo. N 2 7 9 9 A r = m m m i* = 3 . - z J. - X No.2799 t ÿ < tz£ \\ y ' =i D B F 6 0 — 6 .0 A Ä 4 0 7 ïi g •ifÿ A ■>< r / ' í - v s ^ i : » - y7 v l)it# í { S îU S S p p 0 K f * j£ „ ■-tir /v g liË ^ Œ : V rh = 200V,600V„ ■
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N2799A
DBF60â
DBF60C
125X125X
50HwEffiifc
22895GI
/4068KN
DFB60
DBF60
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F20NC15M
Abstract: f20nc15 f20nc SF20NC15M IMX 138 J533 0l75
Text: Schottky Barrier Diode Twin Diode Wtm OUTLINE SF2 0 N C 1 5 M 15 0 V 2 0 A Feature • Tj=150°C • Tj=150°C • High lo Rating • Full Molded • 7 [Æ -J U K • fîlR = 0 .4 m A • L ow Ir= 0 .4 itiA • if& flÆ SÊêCU CCU • Resistance for thermal run-away
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SF20NC15M
FTQ-220A
F20NC15M
waveii50Hz
F20NC15M
f20nc15
f20nc
SF20NC15M
IMX 138
J533
0l75
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S30NC15
Abstract: marking WMM
Text: Schottky Barrier Diode Twin Diode Wtm S30NC15 OUTLINE 150V 30A Feature • L o w V f= 0.88V • < 6 V f=0 .8 8 V • L ow lR=0.5m A • filR = 0 .5 m A • R esista n ce fo r th e rm a l ru n -a w a y :u c < u Main Use • S w itc h in g R eg u la to r • DC/DC Z \ y i K - S
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S30NC15
waveii50Hz
S30NC15
marking WMM
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EGH16-06
Abstract: No abstract text available
Text: EGH16 75A - i r a i w x : O u tlin e d r a w in g s * GENERAL-USE THYRISTOR • 4# ^ : F e a tu re s • i n C o m p r e s s i o n • S W /E contact type High voltage capability • Large d v /d t : A p p lic a tio n s 9 • #1 M o to r control applications
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EGH16
EGH1606
50HzjE3
50HzjE
19S24-Sy
EGH16-06
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