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    AH-16 SOT23 Search Results

    AH-16 SOT23 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    ADR391BUJZ-REEL7 Analog Devices SOT23-5 Voltage Reference Visit Analog Devices Buy
    ADR391AUJZ-R2 Analog Devices SOT23-5 Voltage Reference Visit Analog Devices Buy
    ADR391AUJZ-REEL7 Analog Devices SOT23-5 Voltage Reference Visit Analog Devices Buy
    AD8005ARTZ-REEL7 Analog Devices SOT23 180MHz,400uA Current Fee Visit Analog Devices Buy

    AH-16 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MAX4281

    Abstract: MasterCard pin code MAX4074 MAX4075 MAX4076 MAX4077 MAX4174 MAX4175 MAX4274 MAX4275
    Text: ER LE µPOW NEW AVAILAB S ION VERS WORLD’S FIRST FACTORYPROGRAMMABLE GainAmps IN SOT23 0.1% Accuracy, Optimized Frequency Compensation, and Low Power! 1 Choose the Gain 2 3 Order a GainAmp PART GAIN INTERNAL VCC/2 BIAS GAINBANDWIDTH PRODUCT MHz MAX4074_/


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    PDF MAX4074_ MAX4174_ MAX4175_ MAX4075_ MAX4274_ 23rds MAX4281/4282/4284 MAX4281 MasterCard pin code MAX4074 MAX4075 MAX4076 MAX4077 MAX4174 MAX4175 MAX4274 MAX4275

    t06 marking sot23

    Abstract: BC857 3ft marking 6Ct SOT23 SOT89 marking cec marking da sot89 MARKING BL SOT89 SOT23 "Marking Code" t04 SOT89 MARKING CODE marking t04 sot23 marking 1G SOT23
    Text: Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER PACKAGE MARKING CODE PACKAGE 2PA1576Q FtQ SC-70 BC808W 5Ht SOT323 2PA1576R FtR SC-70 BC808-16 5Ep SOT23 2PA1576S FtS SC-70 BC808-16W


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    PDF 2PA1576Q SC-70 BC808W OT323 2PA1576R BC808-16 2PA1576S BC808-16W t06 marking sot23 BC857 3ft marking 6Ct SOT23 SOT89 marking cec marking da sot89 MARKING BL SOT89 SOT23 "Marking Code" t04 SOT89 MARKING CODE marking t04 sot23 marking 1G SOT23

    zener y21

    Abstract: BZX84C2V4 bzx84c18 diode zener marking 58 BZX84C2V7 BZX84C3V0 BZX84C3V3 BZX84C3V6 BZX84C3V9 BZX84C4V3
    Text: 300mW Surface Mount Zener Diodes BZX84C2V4 - BZX84C75 300mW Surface Mount Zener Diodes Features • • • • • Silicon Planar Power Zener Diodes 350mW Power Dissipation Standard Zener Voltage Tolerance is ± 5 % Ideally Suited for Automated Assembly Processes


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    PDF 300mW BZX84C2V4 BZX84C75 350mW OT-23 OT-23, MIL-STD-202G, zener y21 bzx84c18 diode zener marking 58 BZX84C2V7 BZX84C3V0 BZX84C3V3 BZX84C3V6 BZX84C3V9 BZX84C4V3

    led driver sot23-6

    Abstract: No abstract text available
    Text: PRODUCT DATASHEET AHK3293 PowerLinearTM 3 Channel 1x LED Driver Ge n e r a l D e scr ipt ion Fe a t u r e s The AHK3293 is a linear current-sink LED driver, capable of driving one, two or three LEDs up to 30.2mA each. Featuring individual low resistance, low drop-out voltage


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    PDF AHK3293 AHK3293 led driver sot23-6

    Untitled

    Abstract: No abstract text available
    Text: MMBZ5221B~MMBZ5261B SILICON PLANAR ZENER DIODES 3 1 2 SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Range Symbol Value Unit PD 350 mW


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    PDF MMBZ5221B MMBZ5261B OT-23 MMBZ5256B MMBZ5257B MMBZ5258B MMBZ5259B MMBZ5260B

    MMBZ5228B

    Abstract: 7v5, sot-23 MMBZ5261B MMBZ5221B MMBZ5223B MMBZ5225B MMBZ5226B MMBZ5227B MMBZ5229B MMBZ5230B
    Text: MMBZ5221B~MMBZ5261B SILICON PLANAR ZENER DIODES 3 1 2 SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit PD 350 mW RθJA 417 Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O Power Dissipation


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    PDF MMBZ5221B MMBZ5261B OT-23 MMBZ5221B MMBZ5228B 7v5, sot-23 MMBZ5261B MMBZ5223B MMBZ5225B MMBZ5226B MMBZ5227B MMBZ5229B MMBZ5230B

    MMBZ5221B

    Abstract: MMBZ5223B MMBZ5225B MMBZ5226B MMBZ5227B MMBZ5228B MMBZ5229B MMBZ5230B MMBZ5231B MMBZ5261B
    Text: MMBZ5221B~MMBZ5261B SILICON PLANAR ZENER DIODES 3 1 2 SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit PD 350 mW RθJA 417 Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O Power Dissipation


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    PDF MMBZ5221B MMBZ5261B OT-23 MMBZ5221B MMBZ5223B MMBZ5225B MMBZ5226B MMBZ5227B MMBZ5228B MMBZ5229B MMBZ5230B MMBZ5231B MMBZ5261B

    Untitled

    Abstract: No abstract text available
    Text: MMBZ5221B-MMBZ5261B Silicon Planar Zener Diodes SOT-23 Features 3.10 2.70 0.19 0.08 3 1 1.02 0.89 2.04 1.78 Mechanical Data — 2 3.00 2.20 — — Zener Breakdown Voltage Range 2.4 V to 47 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications


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    PDF MMBZ5221B-MMBZ5261B OT-23 OT-23

    Zener Diode 7V5 BH

    Abstract: 7v5, sot-23 MMBZ5231 MMBZ5221B MMBZ5225 MMBZ5226 MMBZ5227 MMBZ5228 MMBZ5229 MMBZ5261B
    Text: MMBZ5221B~MMBZ5261B SILICON PLANAR ZENER DIODES Low Voltage General Purpose Voltage Regulator Diodes 3 1 2 SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25OC Working Voltage Range Working Voltage Tolerance Symbol Value Unit Vz 4.3 to 47 ±5 V % Power Dissipation


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    PDF MMBZ5221B MMBZ5261B OT-23 8mmx10mmx0 Zener Diode 7V5 BH 7v5, sot-23 MMBZ5231 MMBZ5225 MMBZ5226 MMBZ5227 MMBZ5228 MMBZ5229 MMBZ5261B

    MMBZ5221B

    Abstract: MMBZ5223B MMBZ5225B MMBZ5226B MMBZ5227B MMBZ5228B MMBZ5229B MMBZ5230B MMBZ5231B MMBZ5261B
    Text: MMBZ5221B~MMBZ5261B SILICON PLANAR ZENER DIODES Low Voltage General Purpose Voltage Regulator Diodes 3 2 1 SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit 1) 300 mW 2) 225 mW Power Dissipation Ptot Power Dissipation


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    PDF MMBZ5221B MMBZ5261B OT-23 MMBZ5223B MMBZ5225B MMBZ5226B MMBZ5227B MMBZ5228B MMBZ5229B MMBZ5230B MMBZ5231B MMBZ5261B

    MMBZ5221B

    Abstract: MMBZ5223B MMBZ5225B MMBZ5226B MMBZ5227B MMBZ5228B MMBZ5229B MMBZ5230B MMBZ5231B MMBZ5261B
    Text: MMBZ5221B~MMBZ5261B SILICON PLANAR ZENER DIODES Low Voltage General Purpose Voltage Regulator Diodes 3 1 2 SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value PD 350 RθJA 417 Junction Temperature Tj 150 O Storage Temperature Range


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    PDF MMBZ5221B MMBZ5261B OT-23 MMBZ5221B MMBZ5223B MMBZ5223B MMBZ5225B MMBZ5226B MMBZ5227B MMBZ5228B MMBZ5229B MMBZ5230B MMBZ5231B MMBZ5261B

    zener diode BZ 22

    Abstract: MMBZ5221B MMBZ5223B MMBZ5225B MMBZ5226B MMBZ5227B MMBZ5228B MMBZ5229B MMBZ5230B MMBZ5231B
    Text: MMBZ5221B~MMBZ5261B SILICON PLANAR ZENER DIODES 3 1 2 SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Range Symbol Value Unit PD 350 mW


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    PDF MMBZ5221B MMBZ5261B OT-23 MMBZ5259B MMBZ5260B zener diode BZ 22 MMBZ5223B MMBZ5225B MMBZ5226B MMBZ5227B MMBZ5228B MMBZ5229B MMBZ5230B MMBZ5231B

    sot-23 MARKING CODE ZA

    Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23
    Text: SURFACE-MOUNTED DEVICE MARKINGS Because of their smali size, it's not possible to show types/ values on most surface-mounted components. The following tables show the code markings used to identify most common surface-mounted transistors and diodes. Note that the same


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    PDF OT-23, OT-89 OT-143 BZV49 OT-23 2SC2059K sot-23 MARKING CODE ZA b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23

    PXTA14

    Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
    Text: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.


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    PDF OT143, OT323, OD123 OD323 BZV49 BAW56W BSR40 2PB709AR BAW56 BSR41 PXTA14 mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401

    el 847

    Abstract: el847
    Text: r&iTOKO TK651XX STEP-UP VOLTAGE CONVERTER WITH VOLTAGE MONITOR APPLICATIONS FEATURES Guaranteed 0.9 V Operation Battery Powered Systems Very Low Quiescent Current Cellular Telephones Internal Bandgap Reference Pagers High Efficiency MOS Switching Personal Communications Equipment


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    PDF TK651XX TK651xx IC-xxx-TK651 el 847 el847

    J646

    Abstract: samsung 649 o647
    Text: PACKAGE DIMENSIONS Dimensions in Milimeters SOT-23 2 9 0 . 0 20 L SOT-89 ¿ 5 0 . 0 20 1 - Í — C 643 ELECTRONICS PACKAGE DIMENSIONS Dimensions in Milimeters TO-92 T 0-92 L EE TO -92S T O -126 o 3 72-020 644 ELECTRONICS PACKAGE DIMENSIONS 645 ELECTRONICS


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    PDF OT-23 OT-89 O-92/TO-92S/TO-92L J646 samsung 649 o647

    vqb 71

    Abstract: 074I sem 304 SD50G1
    Text: TELEDYNE COMPONENTS awbüa HflE J> aoot.444 t. SD5000, SD5001, SD5002 SEM ICO N D U CTO R T 7 e5 7 ~ / / N-CHANNEL ENHANCEMENT-MODE QUAD D-MOS FET ANALOG SWITCH ARRAYS ORDERING INFORMATION Sort«! Chip* fn W«fffe Pack SD5000CHP SD50CHCHP 1$-PfnCsram!c Dual In-Line Package


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    PDF SD5000CHP SD5000J SD500QN SD5000, SD5001, SD5002 SD50CHCHP SD5001J SD5002CH« SD5Q02M vqb 71 074I sem 304 SD50G1

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC MPS6522 D | 7*^4145 0007327 1 | PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: Veto =25V • Collector Dissipation: P c max =625mW A BSO LU TE MAXIMUM RATINGS (Ta=25°C) Characteristic


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    PDF MPS6522 T-29-21 625mW 2N3906

    p 605 transistor

    Abstract: p 605 transistor equivalent
    Text: IME 0 SA MS UN G SEMICONDUCTOR INC I 7Tb4142 0007375 1 I PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA76 T-29 -29 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: Vch =50V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


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    PDF 7Tb4142 MPSA76 625mW MPSA75 p 605 transistor p 605 transistor equivalent

    transistor 711

    Abstract: DO 127 samsung tv
    Text: IME D I 7 ^ 4 1 4 2 Q007b?7 b | NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5016 SAM SUN G SEM ICOND UC TO R INC T-33-11 V COLOR TV HORIZONTAL OUTPUT APPLICATIONS TO-3P F High Collector-Bass Vottags Vcso=1500V ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Characteristic


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    PDF Q007b KSD5016 T-33-11 GQG77fe transistor 711 DO 127 samsung tv

    samsung 217

    Abstract: samsung tv NPN Transistor 1A 800V to - 92 ksd5002
    Text: SAMSUNG SEMICONDUCTOR 14E INC D 7^4142 0QQ7t41 7 KSD5002 "T-33-13 COLOR TV HORIZONTAL OUTPUT APPLICATIONS (DAMPER DIODE BUILT IN HIGH Collector-Base Voltage V c so = 1500V ABSOLUTE MAXIMUM RATINGS (TB= 2 5 0C) Characteristic I NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR


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    PDF 0QQ7t41 KSD5002 GQG77fe samsung 217 samsung tv NPN Transistor 1A 800V to - 92 ksd5002

    MPSA10

    Abstract: No abstract text available
    Text: S AM S UNG SEMICONDUCTOR INC IME MPSA20 D J 7*^14142 0007351 I I T ‘ ^ ¿ / NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V c e o “ 40V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (T,=25°C)


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    PDF MPSA20 625mW MPSA10

    M41J

    Abstract: CDG4469 diagram of ic 7941 digital controlled attenuator 206af
    Text: TELEDYNE COMPONENTS 5f lE D Ô W b D S □□O bBai 1 SEMICONDUCTOR 8-BIT HIGH FREQUENCY DIGITAL CONTROLLED ATTENUATOR FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Input Voltage up to 6.0V„US Attenuation Range of 0 to 127.5dB Precise Attenuation Selectable in 0.5dB steps


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    PDF OT-143) M41J CDG4469 diagram of ic 7941 digital controlled attenuator 206af

    3SD21

    Abstract: tt 2144 bv ui 302 0220
    Text: TELEDYNE COMPONE NTS EflE D Ml fi'ilTbaa QQ0b3fi3 1 M _ - r - 3 , z -y 1 0 2 1 0 ,8 0 2 1 1 ,5 0 2 1 2 , SD 2 1 3 ,S D 2 1 4 ,S D 2 1 5 SEM IC O N D U C TO R N-CHANNEL ENHANCEMENT-MODE D-MOS FET SWITCHES ORDERING INFORMATION


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    PDF O-206AF CTO-72) SD210DE SD210DBR SD211DE SD211DE/R SD211CHP SD212DE SD212DE/R SD212CHP 3SD21 tt 2144 bv ui 302 0220