Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    AGR19090EF Search Results

    SF Impression Pixel

    AGR19090EF Price and Stock

    Advanced Semiconductor Inc AGR19090EF

    RF MOSFET Transistors 1.93-1.99GHz 36Watt Gain 15dB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics AGR19090EF
    • 1 $76.43
    • 10 $64.96
    • 100 $60.39
    • 1000 $60.39
    • 10000 $60.39
    		Get Quote

    AGR19090EF Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    AGR19090EF Agere Systems MOSFET Original PDF
    AGR19090EF Agere Systems 90 W, 1930 MHz - 1990 MHz, PCS LDMOS RF Power Transistor Original PDF

    AGR19090EF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet November 2003 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19090E is a 90 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19090E Hz--1990 AGR19090EU AGR19090EF Dissipation10-12, DS04-034RFPP DS01-117RFPP)

    100B100JCA500X

    Abstract: AGR19090E AGR19090EF AGR19090EU JESD22-C101A R190 19090
    Text: AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19090E Hz--1990 AGR19090E AGR19090EU AGR19090EF 100B100JCA500X AGR19090EF AGR19090EU JESD22-C101A R190 19090

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Brief April 2003 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19090E is a 90 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19090E Hz--1990 AGR19090EU AGR19090EF PB03-094RFPP PB03-068RFPP)

    100B100JCA500X

    Abstract: AGR19090E AGR19090EF AGR19090EU CDR33BX104AKWS JESD22-C101A
    Text: Preliminary Data Sheet April 2004 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19090E Hz--1990 AGR19090E DS04-160RFPP DS04-079RFPP) 100B100JCA500X AGR19090EF AGR19090EU CDR33BX104AKWS JESD22-C101A

    AGRA10EM

    Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
    Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station


    Original     		PDF CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM

    Untitled

    Abstract: No abstract text available
    Text: AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19090E Hz--1990

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet July 2003 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19090E is a 90 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19090E Hz--1990 AGR19090EU AGR19090EF DS01-117RFPP

    100B100JCA500X

    Abstract: AGR19090E AGR19090EF AGR19090EU CDR33BX104AKWS JESD22-C101A
    Text: Preliminary Data Sheet March 2004 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19090E Hz--1990 AGR19090E DS04-079RFPP DS04-034RFPP) 100B100JCA500X AGR19090EF AGR19090EU CDR33BX104AKWS JESD22-C101A

    transistor A114

    Abstract: transistor C101 AGR19090E AGR19090EF AGR19090EU JESD22-A114
    Text: Preliminary Product Brief May 2003 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19090E is a 90 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19090E Hz--1990 AGR19090E AGR19090EU AGR19090EF IS-95 PB03-113RFPP PB03-094RFPP) transistor A114 transistor C101 AGR19090EF JESD22-A114