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    AGR19060E Price and Stock

    Advanced Semiconductor Inc AGR19060EF

    RF MOSFET Transistors 1.93-1.99GHz 12Watt Gain 15.5dB
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    Mouser Electronics AGR19060EF
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    AGR19060E Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AGR19060E Agere Systems 60 W, 1930 MHz-1990MHz, PCS LDMOS RF POWER Transistor Original PDF
    AGR19060E TriQuint Semiconductor 60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor Original PDF
    AGR19060EF Agere Systems MOSFET Original PDF
    AGR19060EF Agere Systems 60 W, 1930 MHz - 1990 MHz, PCS LDMOS RF Power Transistor Original PDF
    AGR19060EU Agere Systems MOSFET Original PDF

    AGR19060E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 7350

    Abstract: agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A j496
    Text: Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


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    PDF AGR19060E Hz--1990 AGR19060E DS04-159RFPP DS04-078RFPP) transistor 7350 agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060EF AGR19060EU JESD22-C101A j496

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Brief April 2003 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal


    Original
    PDF AGR19060E Hz--1990 AGR19060EU AGR19060EF PB03-093RFPP PB03-067RFPP)

    Transistor J182

    Abstract: No abstract text available
    Text: Preliminary Data Sheet July 2003 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original
    PDF AGR19060E Hz--1990 AGR19060EU AGR19060EF DS01-216RFPP Transistor J182

    transistor 7350

    Abstract: 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A transistor z14 L
    Text: Preliminary Data Sheet March 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original
    PDF AGR19060E Hz--1990 AGR19060E DS04-078RFPP DS01-216RFPP) transistor 7350 100B100JCA500X AGR19060EF AGR19060EU JESD22-C101A transistor z14 L

    c101 TRANSISTOR

    Abstract: transistor A114 AGR19060E transistor C101 AGR19060EF AGR19060EU JESD22-A114
    Text: Preliminary Product Brief May 2003 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original
    PDF AGR19060E Hz--1990 AGR19060E AGR19060EU AGR19060EF PB03-112RFPP PB03-093RFPP) c101 TRANSISTOR transistor A114 transistor C101 AGR19060EF AGR19060EU JESD22-A114

    transistor 7350 A

    Abstract: 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A transistor 7350
    Text: AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original
    PDF AGR19060E Hz--1990 AGR19060E AGR19060XU AGR19060EF AGR19060XE 12-digit transistor 7350 A 100B100JCA500X AGR19060EF AGR19060EU JESD22-C101A transistor 7350

    TGA2517

    Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
    Text: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint


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    PDF cus937 TGA2517 TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125

    TGA2517

    Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
    Text: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4


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    PDF

    AGRA10EM

    Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
    Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station


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    PDF CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM