Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet November 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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AGR18090E
Characteristic10-12,
DS04-033RFPP
DS02-326RFPP)
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18-12 049 transistor
Abstract: Transistor J182 TRANSISTOR Z10 100B100JW500X AGR18090E AGR18090EF AGR18090EU C1812C105K5RACTR JESD22-A114 RF POWER TRANSISTOR
Text: Preliminary Data Sheet September 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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AGR18090E
AGR18090E
amplR21090U
AGR18090EF
AGR18090F
M-AGR21090F
12-digit
18-12 049 transistor
Transistor J182
TRANSISTOR Z10
100B100JW500X
AGR18090EF
AGR18090EU
C1812C105K5RACTR
JESD22-A114
RF POWER TRANSISTOR
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PDF
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J182 transistor
Abstract: "RF Power Amplifier" AGR18090EF 100B100JW500X AGR18090E AGR18090EU C1812C105K5RACTR JESD22-C101A
Text: Preliminary Data Sheet April 2004 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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Original
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AGR18090E
AGR18090E
DS04-157RFPP
DS04-104RFPP)
J182 transistor
"RF Power Amplifier"
AGR18090EF
100B100JW500X
AGR18090EU
C1812C105K5RACTR
JESD22-C101A
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AGR18090EF
Abstract: No abstract text available
Text: Preliminary Data Sheet September 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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Original
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AGR18090E
AGR18090EF
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PDF
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Transistor J182
Abstract: No abstract text available
Text: Preliminary Data Sheet September 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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Original
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AGR18090E
DS02-326RFPP
Transistor J182
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PDF
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100B100JW500X
Abstract: AGR18090E AGR18090EF AGR18090EU C1812C105K5RACTR JESD22-C101A
Text: Preliminary Data Sheet February 2004 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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Original
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AGR18090E
AGR18090E
DS04-104RFPP
DS04-033RFPP)
100B100JW500X
AGR18090EF
AGR18090EU
C1812C105K5RACTR
JESD22-C101A
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PDF
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