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Advanced Semiconductor Inc AGR09085EF RF MOSFET Transistors 865-895MHz 105Watt Gain 18dB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	AGR09085EF					1 $65.26 10 $55.46 100 $51.8 1000 $51.8 10000 $51.8	Get Quote

AGR09085EF Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
AGR09085EF		Agere Systems	Transistor Mosfet N-CH 65V 8.5A TRAY		Original	PDF

AGR09085EF Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
mosfet j122 Abstract: AGR09085EF J118 MOSFET j122 mosfet AGR09085E AGR09085EU JESD22-C101A RM73B2B120J Text: AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	PDF	AGR09085E Hz--895 AGR09085E del00 AGR09085EU AGR09085EF mosfet j122 AGR09085EF J118 MOSFET j122 mosfet AGR09085EU JESD22-C101A RM73B2B120J
mosfet j122 Abstract: J118 MOSFET j122 mosfet ALT500 Text: AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	PDF	AGR09085E Hz--895 iGR09085EF DS04-055RFPP DS04-028RFPP) mosfet j122 J118 MOSFET j122 mosfet ALT500
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet November 2003 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	PDF	AGR09085E Hz--895 delivering10-12, DS04-055RFPP DS04-028RFPP)
Untitled Abstract: No abstract text available Text: DRAFT COPY ONLY Preliminary Data Sheet November 2003 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	PDF	AGR09085E Hz--895 ca1212 DS04-028RFPP DS03-057RFPP)
z921 Abstract: No abstract text available Text: DRAFT COPY ONLY Preliminary Data Sheet September 2003 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	PDF	AGR09085E Hz--895 c2000, DS03-057RFPP DS01-209RFPP) z921
AGRA10EM Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station	Original	PDF	CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
J118 MOSFET Abstract: j122 mosfet AGR09085E AGR09085EF AGR09085EU JESD22-A114 gl 3201 J122 transistor mosfet j122 RM73B2B120J Text: Preliminary Data Sheet January 2003 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	PDF	AGR09085E Hz--895 AGR09085E incorporati2-4106) DS01-209RFPP J118 MOSFET j122 mosfet AGR09085EF AGR09085EU JESD22-A114 gl 3201 J122 transistor mosfet j122 RM73B2B120J
AGR09085EF Abstract: AGR09085E AGR09085EU JESD22-C101A j122 mosfet Text: Preliminary Data Sheet April 2004 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	PDF	AGR09085E Hz--895 AGR09085E DS04-152RFPP DS04-055RFPP) AGR09085EF AGR09085EU JESD22-C101A j122 mosfet
JESD22-C101A Abstract: AGR09085E AGR09085EF AGR09085EU ne 22 mosfet Text: Preliminary Data Sheet May 2004 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	PDF	AGR09085E Hz--895 AGR09085E DS04-199RFPP DS04-152RFPP) JESD22-C101A AGR09085EF AGR09085EU ne 22 mosfet