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    1GG7

    Abstract: No abstract text available
    Text: Agilent 1GG7-8045 2-26.5 GHz High Power Output Amplifier TC724 Data Sheet Features Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: 2980 x 770 µm 117.3 × 30.3 mils ±10 µm (±0.4 mils) 127 ± 15 µm (5.0 ± 0.6 mils) 75 × 75 µm (2.95 × 2.95 mils), or larger


    Original     		PDF 1GG7-8045 TC724 Agilent83040 400mA) TC724/rev 1GG7

    TC724

    Abstract: 1GG7 1GG7-8045 GaAs MMIC ESD, Die Attach and Bonding Guidelines Traveling Wave Amplifier
    Text: Agilent 1GG7-8045 2-26.5 GHz High Power Output Amplifier TC724 Data Sheet Features Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: 2980 x 770 µm 117.3 × 30.3 mils ±10 µm (±0.4 mils) 127 ± 15 µm (5.0 ± 0.6 mils) 75 × 75 µm (2.95 × 2.95 mils), or larger


    Original     		PDF 1GG7-8045 TC724 TC724 Agilent83040 400mA) TC724/rev 1GG7 1GG7-8045 GaAs MMIC ESD, Die Attach and Bonding Guidelines Traveling Wave Amplifier