Untitled
Abstract: No abstract text available
Text: PULSE MODULATED AND POWER GATED AMPLIFIERS AFSW/AFTL SERIES FEATURES PULSE MODULATED • Modulation rates up to 500 kHz PRF • Video leakage approximately 250 mV • Rise time . < 50 ns • Fall time . < 250 ns POWER GATED
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AFSW3-04000800-10
AFSW4-08001200-11
AFSW3-02000800-15
AFSW3-00100600-16
AFSW3-006
AFTL3-04000800-09
AFTL4-08001200-11
AFTL3-02000800-15
AFTL3-00100600-16
AFTL3-00100800-20
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M904
Abstract: 0BS00
Text: TC59SM916/08/04AFT/AFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 8,388,608-WORDS x 4BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 33,554,432-WORDS × 4BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM
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TC59SM916/08/04AFT/AFTL-70
608-WORDS
16-BITS
216-WORDS
432-WORDS
M904
0BS00
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Untitled
Abstract: No abstract text available
Text: PULSE MODULATED AND POWER GATED AMPLIFIERS AFSW/AFTL SERIES FEATURES PULSE MODULATED • Modulation rates up to 500 kHz PRF • Video leakage approximately 250 mV • Rise time . < 50 ns • Fall time . < 250 ns POWER GATED
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Original
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PDF
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AFSW3-04000800-10
AFSW4-08001200-11
AFSW3-02000800-15
AFSW3-00100600-16
AFSW3-00100800-20
AFSW4-00101200-30
AFSW5-00101800-35
AFTL4-08001200-11
AFTL3-02000800-15
AFTL3-00100600-16
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TC59SM716AFT
Abstract: TC59SM716
Text: TC59SM716/08/04AFT/AFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 2,097,152-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM
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TC59SM716/08/04AFT/AFTL-70
152-WORDS
16-BITS
304-WORDS
608-WORDS
TC59SM716AFT/AFTL
TC59SM708AFT/AFTL
TC59SM704AFT/AFTL
TC59SM716AFT
TC59SM716
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toshiba 7 pin a215
Abstract: A227
Text: TOSHIBA TC514800AJL/AFTL70/80 524,288 WORD X 8 BIT DYNAMIC RAM DESCRIPTION The TC514800AJL/AFTL is the new generation dynamic RAM organized 524,288 word by 8 bit. The TC514800AJL/AFTL utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit
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TC514800AJL/AFTL70/80
TC514800AJL/AFTL
toshiba 7 pin a215
A227
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Untitled
Abstract: No abstract text available
Text: • li 6 INTEGRATED CIRCUIT TO SH IB A TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC51V4400APL / AJ L / A SJ L / A Z L / AFTL / ATRL - 8 0 / 1 0 SILICON GATE CMOS TECH NICAL DATA TENTATIVE D A TA 1.048.576 W ORD x 4 BIT DYN AM IC RAM DESCRIPTION The TC51V4400APL/AJL/ASJL/AZL/AFTL/ATRL is the new generation dynamic RAM organized
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TC51V4400APL
TC51V4400APL/AJL/ASJL/AZL/AFTL/ATRL
TC51V4400APL/AJL/ASJL/AZL/
300/35aÃ
TC51V4400APLâ
T50P26
54MAX
TSOP26
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY12N11A70,70L,75,75L,80,80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY12N11A is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM708AFT/AFTL DRAMs and an unbuffer on a printed circuit board.
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THMY12N11
216-WORD
64-BIT
THMY12N11A
TC59SM708AFT/AFTL
168-pin
64-bit
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PCI33
Abstract: No abstract text available
Text: THLY64N11A70,70L,75,75L,80,80L TOSHIBA TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY64N11A is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM716AFT/AFTL DRAMs on a printed circuit board.
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THLY64N11
608-WORD
64-BIT
THLY64N11A
TC59SM716AFT/AFTL
75/75L
PCI33
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC51V4400ASJL/AFTL80 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC51V 4400ASJL/AFTL is the new generation dynam ic RAM organized 1,048,576 w ord by 4 bit. The TC51V 4400A SJL/AFTL utilizes T oshiba's CM OS silicon gate process technology as w ell as advanced
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TC51V4400ASJL/AFTL80
TC51V
4400ASJL/AFTL
TC51V4400ASJL/AFTL
TC51V4400/
512KX4
QQE542fl
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rao 07-2
Abstract: No abstract text available
Text: TOSHIBA TH M Y64N 11A 70#70L,75f75L#80#80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY64N11A is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM716AFT/AFTL DRAMs and an unbuffer on a printed circuit board.
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THMY64N11
608-word
64-bit
THMY64N11A
TC59SM716AFT/AFTL
168-pin
64-bit
rao 07-2
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Untitled
Abstract: No abstract text available
Text: 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC514400ASJL/AFTL/ATRL is the new generation dynam ic RA M organized 1,048,576 word by 4 bit. The TC514400ASJL/AFTL/ATRL utilizes T oshiba’s CM OS silicon gate process technology as w ell as
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------------TC514400ASJI/AFH/ATRL60/70/80
TC514400ASJL/AFTL/ATRL
14400A
512K54
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a114 est
Abstract: TC51V4400AF RSI05
Text: TOSHIBA TC51V440QASJI7AFILS0 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC51V4400ASJL/AF1L is the new generation dynamic RAM organized 1,048,576 word by 4 bit. The TC51V4400ASJL/AFTL utilizes Toshiba’s CMOS silicon gate process technology as well as advanced
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TC51V440QASJI7AFILS0
TC51V4400ASJL/AF1L
TC51V4400ASJL/AFTL
TC51V4400/
512KX4
a114 est
TC51V4400AF
RSI05
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220E-2
Abstract: D2W220DD18 V220DD AMP110 lt 860 D2W120DD D2W120DG D2W220DD D2W220DF I5BI
Text: Mu f u ^ O jA r m s ^ [l](6 n [| ]^ (0 )V r m s m. A C JU — (CFU+AftlO mttkmm D2W120UD D2W120DF D2W120DG D2W220DD D2W220DF D2W220DG « D2W220DD1 8 D2W220DF1 8 D2W220DG18 U L S ìtè N O . (ff#fllÌP.30) : E69031 C S A : LR49089 T li V : R75169/R85136 MS.:(Iti) 65g
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D2W120DD
D2W120DG
D2W220DD
D2W220DF
D2W220DG
D2W220DDI
D2W220DF1
D2W220DG1
E69031
LR49089
220E-2
D2W220DD18
V220DD
AMP110
lt 860
I5BI
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70l7
Abstract: No abstract text available
Text: TO SH IBA THMY12E11A70,70L,75,75L,80,80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY12E H A is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of nine TC59SM708AFT/AFTL DRAMs and an unbuffer on a printed circuit board.
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THMY12E11A70
THMY12EHA
216-word
72-bit
TC59SM708AFT/AFTL
72-bit
75/75L
70l7
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Untitled
Abstract: No abstract text available
Text: 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC514400ASJL/AFTL/ATRL is the new generation dynamic RAM organized 1,048,576 word by 4 bit. The TC514400ASJL/AFTL/ATRL utilizes Toshiba’s CMOS silicon gate process technology as well as
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-----------TC51440QASJL/AFII/ATOL60/70/80
TC514400ASJL/AFTL/ATRL
TC514400ASJL/
512K54
00254CH
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Untitled
Abstract: No abstract text available
Text: TOSHIBA T H LY 6 4 N 1 1A 7 0 f70Lf75f75Lf80f80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY64N11A is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM716AFT/AFTL DRAMs on a printed circuit board.
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THLY64N11
608-word
64-bit
THLY64N11A
TC59SM716AFT/AFTL
75/75L
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LH0032
Abstract: No abstract text available
Text: EL2006/EL2006A EL2006/EL2006A WISH PERFORMANCE AHAL06 WfTESRÄtED CIRCUITS ffifffl Gttltt FdSt F ET llipUt Op Aftlß F e a tu r e s G en era l D e sc r ip tio n • • • • • • • 90 dB open loop gain 450 W/fj .s slew rate 40 M H z b andw idth N o th erm al tail
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EL2006/EL2006A
AHAL06
LH0032
EL2006/EL2006A
LH0032
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THLY12N01 A70,70L,75,75L,80,80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY12N01A is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM716AFT/AFTL DRAMs on a printed circuit board.
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THLY12N01
THLY12N01A
216-word
64-bit
TC59SM716AFT/AFTL
75/75L
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C551001
Abstract: No abstract text available
Text: 120-312 H3 S - / J / 7 TOSHIBA 1Mbit Static RAM TC551001APL-L/AFL-L /AFTL-L/ATRL-L LV Data Sheet INTEGRATED CIRCUIT TOSHIBA TOSHIBA DIGITAL INTEGRATED CIRCUIT TECHNICAL DATA TC551001APL / AFL / AFTL / ATRL - 70L, - 85L, - 1 0L (LV) ” SILICON GATE CMOS
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TC551001APL-L/AFL-L
TC551001APL
TC551001
C551001
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A9RV
Abstract: A9RC
Text: TOSHIBA TC514800AJLL/AFILLt70/80 524,288 WORD X 8 BIT DYNAMIC RAM DESCRIPTION The TC514800AJLL/AFTLL is the new generation dynamic RAM organized 524,288 word by 8 bit. The TC514800AJLL/AFTLL utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit
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TC514800AILL/AFTLL70/80
TC514800AJLL/AFTLL
TC514800AJLLVAFTLL
TC514800AJLL/
AFTLL-70/80
A9RV
A9RC
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D036
Abstract: D018 D019 D032 D051
Text: T O S H IB A THMY25E01A70,70L,75,75L,80,80L TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY25E01A is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM708AFT/AFTL DRAMs and an unbuffer on a printed circuit board.
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THMY25E01
432-WORD
72-BIT
THMY25E01A
TC59SM708AFT/AFTL
72-bit
75/75L
D036
D018
D019
D032
D051
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Untitled
Abstract: No abstract text available
Text: T H M Y 6 4 E 1 1A 7 0 #70L,75f75L#80#80L TOSHIBA TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY64E11A is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of 5 TC59SM716AFT/AFTL DRAMs and an unbuffer on a printed circuit board.
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THMY64E11
608-WORD
72-BIT
THMY64E11A
TC59SM716AFT/AFTL
168-pin
72-bit
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Untitled
Abstract: No abstract text available
Text: TOSHIBA T H M Y 6 4 N 1 1A 7 0 #70L,75f75L#8 0 #80L TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY64N11A is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM716AFT/AFTL DRAMs and an unbuffer on a printed circuit board.
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OCR Scan
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THMY64N11
608-WORD
64-BIT
THMY64N11A
TC59SM716AFT/AFTL
168-pin
64-bit
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Untitled
Abstract: No abstract text available
Text: ^ TTL CONTROLLED AMPLIFIERS AFTL SERIES FEATURES • TTL Switched Power Supply • Built-In TTL Driver • Ideal for: - Remote Power Control - Low Power Consumption - Thermal Management Systems • Standard AFS Low Noise Performance • Specifications: - Rise Time <2.0 ps
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FTL4-02001800-23
AFTL5-G01Q1800-25
AFTL4-00102650-40
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