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    AFT26HW050SR3 Search Results

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    NXP Semiconductors AFT26HW050SR3

    RF MOSFET LDMOS 28V NI780
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    Flip Electronics AFT26HW050SR3

    RF MOSFET LDMOS 28V NI780
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    DigiKey AFT26HW050SR3 Bulk 10
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    Rochester Electronics LLC AFT26HW050SR3

    RF MOSFET LDMOS 28V NI780
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    DigiKey AFT26HW050SR3 Bulk 4
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    Freescale Semiconductor AFT26HW050SR3

    RF Power Field-Effect Transistor, N-Channel, MOSFET
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    Rochester Electronics AFT26HW050SR3 4,794 1
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    AFT26HW050SR3 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AFT26HW050SR3 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, TRANS RF 2.6GHZ 9W NI780-4S4 Original PDF

    AFT26HW050SR3 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MMZ20363B

    Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
    Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless


    Original     		PDF

    WELWYN c21

    Abstract: No abstract text available
    Text: Document Number: AFT26HW050S Rev. 1, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N−Channel Enhancement−Mode Lateral MOSFETs These 9 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous


    Original     		AFT26HW050S AFT26HW050SR3 AFT26HW050GSR3 AFT26H050W26SR3 6/2013Semiconductor, WELWYN c21 PDF

    WELWYN c21

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT26HW050S Rev. 2, 7/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 9 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous


    Original     		AFT26HW050S AFT26HW050SR3 AFT26HW050GSR3 AFT26H050W26SR3 7/2013Semiconductor, WELWYN c21 PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: AFT26HW050S Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N−Channel Enhancement−Mode Lateral MOSFETs These 9 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous


    Original     		AFT26HW050S AFT26HW050SR3 AFT26HW050GSR3 5/2013Semiconductor, PDF