2SC2085
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification 2SC2085 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High breakdown voltage ·High transition frequency APPLICATIONS ·For line-operated AF amplifier and chrominance output applications PINNING
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2SC2085
O-220
O-220)
2SC2085
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2SC2085
Abstract: 300V power amplifier
Text: SavantIC Semiconductor Product Specification 2SC2085 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High breakdown voltage ·High transition frequency APPLICATIONS ·For line-operated AF amplifier and chrominance output applications PINNING
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2SC2085
O-220
O-220)
2SC2085
300V power amplifier
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12 pin RJ45 LED
Abstract: RJ45 CONNECTOR PLUG 12 pin rj45 connector 12 pin rj45 with integrated LED RJ45 connector 1x2 3 PIN LED RJ45 LED 8 pin RJ45 connector 16 pin rj45 with integrated LED RJ45 10 pin
Text: PULSEJACK TM PowerJack G-UP10 Description: www.pulseeng.com 10/100 Base-TX RJ45 Multi-port with LEDs and integrated magnetics – Designed for most leading PHY manufacturers with the addition of Power Feeding over the signal pairs according to IEEE 802.3.AF
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G-UP10
12 pin RJ45 LED
RJ45 CONNECTOR PLUG
12 pin rj45 connector
12 pin rj45 with integrated LED
RJ45 connector 1x2
3 PIN LED
RJ45 LED
8 pin RJ45 connector
16 pin rj45 with integrated LED
RJ45 10 pin
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Untitled
Abstract: No abstract text available
Text: PULSEJACK TM PowerJack G-UP10 www.pulseeng.com Description: 10/100 Base-TX RJ45 Multi-port with LEDs and integrated magnetics – Designed for most leading PHY manufacturers with the addition of Power Feeding over the signal pairs according to IEEE 802.3.AF
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G-UP10
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7806 4A
Abstract: RJ45 jack 1X4 12 pin rj45 with integrated LED JG0 Series 3, C JG0-0032NL 12 pin RJ45 LED RJ45 connector 1x2 D-71083 J416 JG0-0031
Text: PULSEJACK TM PowerJack G-UP10 www.pulseeng.com Description: 10/100 Base-TX RJ45 Multi-port with LEDs and integrated magnetics – Designed for most leading PHY manufacturers with the addition of Power Feeding over the signal pairs according to IEEE 802.3.AF
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G-UP10
7806 4A
RJ45 jack 1X4
12 pin rj45 with integrated LED
JG0 Series 3, C
JG0-0032NL
12 pin RJ45 LED
RJ45 connector 1x2
D-71083
J416
JG0-0031
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JG0-0031NL
Abstract: No abstract text available
Text: PulseJack 1XN, Tab-Up, PoE Description: 100 Base-TX RJ45 Multi-port with LEDs and integrated magnetics - Designed for most leading PHY manufacturers with the addition of Power Feeding over the signal pairs according to IEEE 802.3.AF Features and Benefits:
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JG0-0031NL
JG0-0032NL
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Untitled
Abstract: No abstract text available
Text: PulseJack TM PowerJack G-UP10 www.pulseeng.com Description: 10/100 Base-TX RJ45 Multi-port with LEDs and integrated magnetics – Designed for most leading PHY manufacturers with the addition of Power Feeding over the signal pairs according to IEEE 802.3.AF
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G-UP10
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RJ45 jack 1X4
Abstract: JG0-0032NL 12 pin RJ45 LED RJ45 connector 1x2 B402 D-71083 J416 JG0-0031
Text: PulseJack TM PowerJack G-UP10 www.pulseeng.com Description: 10/100 Base-TX RJ45 Multi-port with LEDs and integrated magnetics – Designed for most leading PHY manufacturers with the addition of Power Feeding over the signal pairs according to IEEE 802.3.AF
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G-UP10
JG0-0031NL
JG0-0032NL
RJ45 jack 1X4
JG0-0032NL
12 pin RJ45 LED
RJ45 connector 1x2
B402
D-71083
J416
JG0-0031
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bbs 6102
Abstract: m37540e8fp DSA003632 AN6136
Text: MITSUBISHI MICROCOMPUTERS 7540 Group RY A IMIN ge. ion. icat to chan ecif l sp ubject a in af es not mits ar li is is : Th metric e ic Not e para Som L SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER DESCRIPTION The 7540 Group is the 8-bit microcomputer based on the 740 family
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16-bit
M37540M4-XXXGP
M37540E8GP
P22/AN2
P23/AN3
P24/AN4
P25/AN5
P10/RXD1
P11/TXD1
bbs 6102
m37540e8fp
DSA003632
AN6136
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BU2727AX
Abstract: BU2525AF
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700V.
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BU2727AX
OT399
BU2727AX
BU2525AF
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BU2525
Abstract: BU2727 BU2525A BU2727AW
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AW GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to
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BU2727AW
OT429
BU2525
BU2727
BU2525A
BU2727AW
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BU2525AF
Abstract: BU2725AX
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.
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BU2725AX
OT399
BU2525AF
BU2725AX
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bu2525
Abstract: BU2525A BU2727A BY228
Text: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2727A GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to
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BU2727A
bu2525
BU2525A
BU2727A
BY228
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BU2727A
Abstract: BU2525A bu2525
Text: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2727A GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to
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BU2727A
BU2727A
BU2525A
bu2525
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BU2527
Abstract: bu2527afx BU2525AF BU2725AF TRansistor 1300 free
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.
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BU2725AF
OT199
BU2527
bu2527afx
BU2525AF
BU2725AF
TRansistor 1300 free
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RGN2004
Abstract: rgn 1064 rgn 4004 RGN1054 DN904 s41 604 lf RGN354 TL 413 RGN1404 L416D
Text: Type A4 A A 4 AM H e rste lle r GleicheType C a stilla C a stilla RENS 1274 RENS 1284 RENS 1294 AF 2 AF 3 AF 7 RENS 1244 C astilla C o stilla C a stilla C a s tilla C a stilla C a stilla C a stilla C a stilla C a s tilla A 4 DD A 4 DP 1 C a stilla C a stilla
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2SC2085
Abstract: No abstract text available
Text: Power T ransistors 2SC2085 2SC2085 Silicon PNP Triple-Diffused Planar Type Package Dimensions Line-Operated AF Amplifier Chrominance Output • Features • 1W output in class-A operation • L arg e co llecto r pow er dissipation Pc ■ Absolute Maximum Ratings (Ta=25°C)
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2SC2085
O-220AB
SC-46
Ic--10
Ic-50mA
Ic-100
200MHz
2SC2085
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rs3300cj
Abstract: RS3060CJ RS3021CJ RS3040CJ Q52-X3150 rs 1023 RS3150CJ Q51X1054 RS3010CL Q52-X3026
Text: Special-Purpose Tubes Special-purpose tubes are preferably used in RF/AF amplifiers, for pulse operation, modulation, in VHF and TV transmitters as well as for industrial heating. Type ! Q r ii^ 'n g r o d e ] P ric e e a c n !i + ; 5• - 1. RS 1002 A
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RS1Q26
RS3010CJ
RS3021CJ
3026a
RS3040CJ
RS3060CJ
RS3300CJ
Q54-X1CX32
Q54-X1003
Q54-X1006
Q52-X3150
rs 1023
RS3150CJ
Q51X1054
RS3010CL
Q52-X3026
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2sc144
Abstract: 2SC1446
Text: 2 S C 1 4 4 6 NPN zzXSsXrJ- U—"^SH /Si NPN Triple Diffused Planar B^ifijS^S^ffl^ffl/Line-Operated AF Amplifier *7 ^ ^/Chrominance Output Unit *mm 11.5max. Sfr/Features 4. 8max. 1. 5max. • A8fc lfi“C 1W O iiiiJ ^ i|^ > ix tvi ‘o /lW output in class-A operation
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2SC1446
Ic-10mA
100mA,
2sc144
2SC1446
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T0-92B
Abstract: transistors equivalent 2N3702 2N3404 2N5450 MPS3704 equivalent 2N5355 2n EQUIVALENT MPS3702 2N5221 equivalent
Text: 2N3702 MPS 3702 2 N 3706 MPS 3706 rough through PNP . KPN SILICON GENERAL PURPOSE AF TRANSISTORS • i . VT. r 4 - - T f " 7 • ! ‘ T- • • ^-y-XV" -ai. ^ V — r ^ - T K ; •‘ ’V ’ '' M . A I J" CASE T0-92B THE ABOVE TYPES ARE SILICON PLANAR EPITAXIAL
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t0-92b
t0-92a
2N3702
T0-92B.
MPS5J02
T0-92A.
2n/mps3702
2n/mps3705
2n/mps3706
2N/MP53702
transistors equivalent
2N3404
2N5450
MPS3704 equivalent
2N5355
2n EQUIVALENT
MPS3702
2N5221 equivalent
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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rgn 1064
Abstract: vergleichsliste mo465 telefunken hr 660 tungsram Ubf 11 TK4100 RGN2004 Telefunken g-2504 Telefunken ebf 11
Text: ' RÖHRENDATEN für Schule u, Werkstatt y ^ 1. VergleichstabeSIe F 2, Austauschliste Ausgabe 1928— 1945 . ' *en W ü n schen v ie le r Interessenten, en tsp rech en d , bringen w ir mit n ach fo lg e n d e r A ufstellung eine Vergleichsliste d e r e u ro p äisch en Röhren so w ie eine Austaüschrtste* die
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