AEQ05DM06AV Search Results

AMG-Q05DM06AV

Abstract: JESD625-A 1378P AMGQ05DM06AV frankfurt
Text: AMG-Q05DM06AV N/P-MOS H-BRIDGE 1. Functional Description of the AMG-Q05DM06AV The AMG-Q05DM06AV is built by utilizing one of the latest state-of-the-art trench technologies to achieve ultra low resistance RDS on for the power MOSFETs. The complementary Hbridge consists of 2 PMOS/NMOS transistor pairs. Based on this trench-technology the input