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    AEC-Q101 TO220AB Search Results

    AEC-Q101 TO220AB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM6J808R Toshiba Electronic Devices & Storage Corporation MOSFET, P-ch, -40 V, -7 A, 0.035 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K819R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 10 A, 0.0258 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K809R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K504NU Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 30 V, 9.0 A, 0.0195 Ohm@10V, UDFN6B, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation

    AEC-Q101 TO220AB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: STPS2545CT-Y Automotive power Schottky rectifier Datasheet − production data Features A1 • Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low thermal resistance ■ Avalanche capability specified ■ AEC-Q101 qualified


    Original     		PDF STPS2545CT-Y AEC-Q101 O-220AB

    Untitled

    Abstract: No abstract text available
    Text: STPS2545CT-Y Automotive power Schottky rectifier Datasheet − production data Features • A1 Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low thermal resistance ■ Avalanche capability specified ■ AEC-Q101 qualified


    Original     		PDF STPS2545CT-Y AEC-Q101 O-220AB

    Untitled

    Abstract: No abstract text available
    Text: MBR6040CT 60.0Amp Schottky Barrier Rectifier TO-220AB Pb RoHS COMPLIANCE Features Low power loss, high efficiency High current capability, Low forward voltage drop. Plastic material used carries Underwriters Laboratory Classification 94V-0 Qualified as per AEC-Q101


    Original     		PDF MBR6040CT O-220AB AEC-Q101 260/10S/ MIL-STD-202,

    STPS2545CTY

    Abstract: No abstract text available
    Text: STPS2545CT-Y Automotive power Schottky rectifier Features • A1 Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low thermal resistance ■ Avalanche capability specified ■ AEC-Q101 qualified K A2 A2 A1 Description


    Original     		PDF STPS2545CT-Y AEC-Q101 O-220AB STPS2545CTY

    Untitled

    Abstract: No abstract text available
    Text: VS-HFA30TA60CHN3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 2 x 15 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • AEC-Q101 qualified, meets JESD 201 class 1A whisker test • Material categorization:


    Original     		PDF VS-HFA30TA60CHN3 AEC-Q101 O-220AB VS-HFA30TA60CHN3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    FGB3440G2

    Abstract: No abstract text available
    Text: FGB3440G2_F085 / FGD3440G2_F085 FGP3440G2_F085 EcoSPARK 2 335mJ, 400V, N-Channel Ignition IGBT Features Applications o „ SCIS Energy = 335mJ at TJ = 25 C „ Automotive lgnition Coil Driver Circuits „ Logic Level Gate Drive „ Coil On Plug Applications „ Qualified to AEC Q101


    Original     		PDF FGB3440G2 FGD3440G2 FGP3440G2 335mJ, 335mJ O-263AB O-220AB O-252AA ESCIS25

    Untitled

    Abstract: No abstract text available
    Text: New Product VS-HFA30TA60CHN3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 2 x 15 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • AEC-Q101 qualified, meets JESD 201 class 1A whisker test • Material categorization:


    Original     		PDF VS-HFA30TA60CHN3 AEC-Q101 O-220AB O-220AB VS-HFA30TAtrademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: VS-HFA30TA60CHN3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 2 x 15 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • AEC-Q101 qualified, meets JESD 201 class 1A whisker test • Material categorization: for definitions of


    Original     		PDF VS-HFA30TA60CHN3 AEC-Q101 O-220AB VS-HFA30TA60CHN3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SQP120N06-06 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.006 ID (A) • AEC-Q101 Qualifiedd


    Original     		PDF SQP120N06-06 AEC-Q101 O-220AB O-220 SQP120N06-06-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SQP120N10-09 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 100 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.0095 ID (A) • AEC-Q101 Qualifiedd


    Original     		PDF SQP120N10-09 AEC-Q101 O-220 SQP120N10-09-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: BUK951R6-30E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high


    Original     		PDF BUK951R6-30E

    Untitled

    Abstract: No abstract text available
    Text: BUK954R8-60E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high


    Original     		PDF BUK954R8-60E

    Untitled

    Abstract: No abstract text available
    Text: BUK752R7-60E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high


    Original     		PDF BUK752R7-60E

    Untitled

    Abstract: No abstract text available
    Text: SQP120N06-06 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.006 ID (A) • AEC-Q101 Qualifiedd


    Original     		PDF SQP120N06-06 AEC-Q101 O-220AB O-220 SQP120N06-06-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: BUK951R9-40E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high


    Original     		PDF BUK951R9-40E

    Untitled

    Abstract: No abstract text available
    Text: BUK953R5-60E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high


    Original     		PDF BUK953R5-60E

    Untitled

    Abstract: No abstract text available
    Text: BUK954R4-80E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high


    Original     		PDF BUK954R4-80E

    Untitled

    Abstract: No abstract text available
    Text: BUK753R8-80E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high


    Original     		PDF BUK753R8-80E

    Untitled

    Abstract: No abstract text available
    Text: SQP60N06-15 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.015 ID (A) • AEC-Q101 Qualifiedd


    Original     		PDF SQP60N06-15 AEC-Q101 O-220AB O-220 SQP60N06-15-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SQP120N10-3m8 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 100 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.0038 ID (A) • AEC-Q101 Qualifiedd


    Original     		PDF SQP120N10-3m8 AEC-Q101 O-220 SQP120N10-3m8-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SQP60N06-15 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.015 ID (A) • AEC-Q101 Qualifiedd


    Original     		PDF SQP60N06-15 AEC-Q101 O-220AB O-220 SQP60N06-15-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SQP120N10-3m8 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 100 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.0038 ID (A) • AEC-Q101 Qualifiedd


    Original     		PDF SQP120N10-3m8 AEC-Q101 O-220 SQP120N10-3m8-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    BUK953

    Abstract: No abstract text available
    Text: BUK953R2-40E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high


    Original     		PDF BUK953R2-40E BUK953

    BUK753

    Abstract: BUK753R5-60E
    Text: BUK753R5-60E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high


    Original     		PDF BUK753R5-60E BUK753 BUK753R5-60E