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    NXP Semiconductors MIMXRT1011CAE4A

    IC MCU 32BIT EXT MEM 80FQFP
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    DigiKey MIMXRT1011CAE4A Tray 1,101 1
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    Avnet Americas MIMXRT1011CAE4A Tray 2,880 13 Weeks 96
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    Mouser Electronics MIMXRT1011CAE4A 233
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    Newark MIMXRT1011CAE4A Bulk 2,880 96
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    MIMXRT1011CAE4A Bulk 1,268 1
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    Chip1Stop MIMXRT1011CAE4A Tray 480
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    EBV Elektronik MIMXRT1011CAE4A 15 Weeks 96
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    Sensata Technologies P265-50A-E4A

    SENSOR PRES ABS 0-50PSI 1/4"NPT
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    DigiKey P265-50A-E4A Bulk 2 1
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    TME P265-50A-E4A 4 1
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    Festo CPX-4AE-4AA-H

    INPUT MODULE
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    DigiKey CPX-4AE-4AA-H Bulk 1
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    California Eastern Laboratories (CEL) PS7113L-2A-E4-A

    SSR RELAY SPST-NO 350MA 0-100V
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    DigiKey PS7113L-2A-E4-A Reel 1,000
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    California Eastern Laboratories (CEL) PS7113L-1A-E4-A

    SSR RELAY SPST-NO 350MA 0-100V
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    AE4A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JESD22-A110-B HIGHLY ACCELERATED TEMPERATURE AND

    Abstract: No abstract text available
    Text: V•I Chip – BCM Bus Converter Module TM B048K480T30 + + –K – • >97% efficiency • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1165 W/in3 • <1 µs transient response • Small footprint – 280 W/in • >3.5 million hours MTBF


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    PDF B048K480T30 P/N27688 07/04/10M JESD22-A110-B HIGHLY ACCELERATED TEMPERATURE AND

    transistor af 126

    Abstract: JESD22-B-107-A J-STD-029 mount chip transistor 332
    Text: V•I Chip – BCM Bus Converter Module TM B048K120T20 Vin = 42 - 53 V Vout = 10.5 - 13.25 V Iout = 17.0 A K = 1/4 Rout = 25 mΩ max • 48V to 12V V•I Chip Converter • >96% efficiency • 200 Watt 300 Watt for 1 mS • 125°C operation • High density – up to 800 W/in3


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    PDF B048K120T20 7/03/10M transistor af 126 JESD22-B-107-A J-STD-029 mount chip transistor 332

    JESD22-A-103A

    Abstract: jesd22-a-104B JESD22 A-102 JESD22-A-101 JESD22-B-107-A converter 48 to 24 switching
    Text: PRELIMINARY V•I Chip Bus Converter Module BCM V•I Chip – BCM Bus Converter Module TM B048K480T30 K indicates BGA configuration. For other mounting options see Part Numbering below. • 48 V to 48 V V•I Chip Converter • Typical efficiency 96% • 300 Watt 450 Watt for 1 ms


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    PDF B048K480T30 JESD22-A-103A jesd22-a-104B JESD22 A-102 JESD22-A-101 JESD22-B-107-A converter 48 to 24 switching

    48V-to-12V

    Abstract: smd TRANSISTOR marking T1
    Text: V•I Chip – BCM Bus Converter Module TM B048K120T15 Vin = 42 - 53 V Vout = 10.5 - 13.25 V Iout = 12.5 A K = 1/4 Rout = 32 mΩ max • 48V to 12V V•I Chip Converter • >96% efficiency • 150 Watt 225 Watt for 1 ms • 125°C operation • High density – up to 600 W/in3


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    PDF B048K120T15 11/03/10M 48V-to-12V smd TRANSISTOR marking T1

    IPC 9701

    Abstract: transistor marking JB
    Text: BCM V•I Chip – BCM Bus Converter Module TM B048K480T30 K indicates BGA configuration. For other mounting options see Part Numbering below. • 48 V to 48 V V•I Chip Converter • >97% efficiency • 300 Watt 450 Watt for 1 ms • 125°C operation + +


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    PDF B048K480T30 P/N27688 10/04/10M IPC 9701 transistor marking JB

    LMH6618

    Abstract: LMH6618MK LMH6618MKE TSOT23 MARKING AE4A ae4a
    Text: General Description Features The LMH6618 single, with shutdown and LMH6619 (dual) are 130 MHz rail-to-rail input and output amplifiers designed for ease of use in a wide range of applications requiring high speed, low supply current, low noise, and the ability to drive


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    PDF LMH6618 LMH6619 LMH6618 LMH6619 LMH6618/LMH6619 TSOT23 LMH6618MK LMH6618MKE LMH6618MK LMH6618MKE TSOT23 MARKING AE4A ae4a

    JESD22-A-103A

    Abstract: JESD22-A-104B JESD22-A113-B V048K020T080 JESD22-A108B
    Text: VTM V•I Chip – VTM Voltage Transformation Module TM • 48 V to 2 V V•I Chip Converter • 125°C operation • 80 A 120 A for 1 ms • 1 µs transient response V048K020T080 K indicates BGA configuration. For other mounting options see Part Numbering below.


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    PDF V048K020T080 V048K020T080 09/04/10M JESD22-A-103A JESD22-A-104B JESD22-A113-B JESD22-A108B

    MARKING AE4A

    Abstract: LMH6618 LMH6619MAx LMH6618MK LMH6618MKE TSOT23
    Text: LMH6618 Single/LMH6619 Dual 130 MHz, 1.25 mA RRIO Operational Amplifiers General Description Features The LMH6618 single, with shutdown and LMH6619 (dual) are 130 MHz rail-to-rail input and output amplifiers designed for ease of use in a wide range of applications requiring high


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    PDF LMH6618 Single/LMH6619 LMH6618 LMH6619 LMH6619 MARKING AE4A LMH6619MAx LMH6618MK LMH6618MKE TSOT23

    Untitled

    Abstract: No abstract text available
    Text: V•I Chip – BCM Bus Converter Module TM B048K480T30 + + –K – • >97% efficiency • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1165 W/in3 • <1 µs transient response • Small footprint – 280 W/in • >3.5 million hours MTBF


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    PDF B048K480T30 P/N27688 06/04/10M

    Untitled

    Abstract: No abstract text available
    Text: VTM V•I Chip – VTM Voltage Transformation Module TM • 48 V to 1.5 V V•I Chip Converter • 125°C operation • 100 A 150 A for 1 ms • 1 µs transient response V048K015T100 K indicates BGA configuration. For other mounting options see Part Numbering below.


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    PDF V048K015T100 V048K015T100 10/04/10M

    smd RO25

    Abstract: No abstract text available
    Text: V•I Chip – BCM Bus Converter Module TM B048K120T20 + + –K – • >96% efficiency • 200 Watt 300 Watt for 1 ms • 125°C operation • High density – up to 800 W/in3 • 1 µs transient response • Small footprint – 200 W/in • >3.5 million hours MTBF


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    PDF B048K120T20 06/04/10M smd RO25

    Untitled

    Abstract: No abstract text available
    Text: V•I Chip – BCM Bus Converter Module TM B048K120T20 Vin = 42 - 53 V Vout = 10.5 - 13.25 V Iout = 17.0 A K = 1/4 Rout = 25 mΩ max • 48V to 12V V•I Chip Converter • >96% efficiency • 200 Watt 300 Watt for 1 mS • 125°C operation • High density – up to 800 W/in3


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    PDF B048K120T20 8/03/10M

    14bcm

    Abstract: No abstract text available
    Text: V•I Chip – BCM Bus Converter Module TM B048K096T24 + + –K – • >96% efficiency • 240 Watt 360 Watt for 1 ms • 125°C operation • High density – up to 960 W/in3 • <1 µs transient response • Small footprint – 240 W/in • >3.5 million hours MTBF


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    PDF B048K096T24 07/04/10M 14bcm

    JESD22-A-103A

    Abstract: JESD22-A-104B JESD22-A113-B JESD22-B-107-A V048K480T006 337 BGA footprint
    Text: PRELIMINARY VTM V048K480T006 V•I Chip – VTM Voltage Transformation Module TM • 48 V to 48 V V•I Chip Converter • 125°C operation • 6.3 A 9.4 A for 1 ms • 1 µs transient response • High density – 1218 W/in3 K indicates BGA configuration. For other


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    PDF V048K480T006 V048K480T006 JESD22-A-103A JESD22-A-104B JESD22-A113-B JESD22-B-107-A 337 BGA footprint

    IPC-9701

    Abstract: JESD22-A-101
    Text: PRELIMINARY V•I Chip Voltage Transformation Module BCM V•I Chip – BCM Bus Converter Module TM B048K120T30 K indicates BGA configuration. For other mounting options see Part Numbering below. • 48 V to 12 V V•I Chip Converter • 96% efficiency • 300 Watt 450 Watt for 1 ms


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    PDF B048K120T30 IPC-9701 JESD22-A-101

    BCM reflow

    Abstract: smd transistor marking SG smd transistor v2 IPC-9701
    Text: V•I Chip – BCM Bus Converter Module TM B048K120T10 Vin = 42 - 53 V Vout = 10.5 - 13.25 V Iout = 8.3 A K = 1/4 Rout = 32 mΩ max • 48V to 12V V•I Chip Converter • >96% efficiency • 100 Watt 150 Watt for 1 ms • 125°C operation • High density – up to 400 W/in3


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    PDF B048K120T10 11/03/10M BCM reflow smd transistor marking SG smd transistor v2 IPC-9701

    mpga479

    Abstract: intel 94v-0 MOTHERBOARD MANUAL M25N-2 MPGA479M M26N A139 E1 P22-R22 AB22-AB23 AB24-AB25 AF17-AF18
    Text: Intel® Mobile Processor Micro-FCPGA Socket mPGA479M Design Guidelines November 2001 Revision 1.0 Order Number: 298520-001 mPGA479 Socket Design Guidelines, Rev 1.0 R Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual


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    PDF mPGA479M) mPGA479 mPGA479M intel 94v-0 MOTHERBOARD MANUAL M25N-2 M26N A139 E1 P22-R22 AB22-AB23 AB24-AB25 AF17-AF18

    JESD-22-B103-A

    Abstract: No abstract text available
    Text: BCM V•I Chip – BCM Bus Converter Module TM B048K120T20 K indicates BGA configuration. For other mounting options see Part Numbering below. • 48 V to 12 V V•I Chip Converter • >96% efficiency • 200 Watt 300 Watt for 1 ms • 125°C operation • High density – up to 800 W/in3


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    PDF B048K120T20 11/04/10M JESD-22-B103-A

    SG 94 DIODE SMD

    Abstract: No abstract text available
    Text: VTM V•I Chip – VTM Voltage Transformation Module TM • 48 V to 1.5 V V•I Chip Converter • 125°C operation • 90 A 135 A for 1 ms • 1 µs transient response V048K015T090 K indicates BGA configuration. For other mounting options see Part Numbering below.


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    PDF V048K015T090 V048K015T090 10/04/10M SG 94 DIODE SMD

    Untitled

    Abstract: No abstract text available
    Text: LMH6618,LMH6619 LMH6618 Single/LMH6619 Dual 130 MHz, 1.25 mA RRIO Operational Amplifiers Literature Number: SNOSAV7C LMH6618 Single/LMH6619 Dual 130 MHz, 1.25 mA RRIO Operational Amplifiers General Description Features The LMH6618 single, with shutdown and LMH6619 (dual)


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    PDF LMH6618 LMH6619 Single/LMH6619 LMH6618

    JESD22-A-103A

    Abstract: JESD22-A-104B JESD22-A113-B JESD22-B-107-A V048K120T025
    Text: PRELIMINARY VTM V048K120T025 V•I Chip – VTM Voltage Transformation Module TM • 48 V to 12 V V•I Chip Converter • 125°C operation • 25 A 37.5 A for 1 ms • 1 µs transient response • High density – 1200 W/in3 K indicates BGA configuration. For other


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    PDF V048K120T025 V048K120T025 JESD22-A-103A JESD22-A-104B JESD22-A113-B JESD22-B-107-A

    Untitled

    Abstract: No abstract text available
    Text: BCM V•I Chip – BCM Bus Converter Module TM B048K480T30 + + –K – • >97% efficiency • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1165 W/in3 • <1 µs transient response • Small footprint – 280 W/in • >3.5 million hours MTBF


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    PDF B048K480T30 P/N27688 08/04/10M

    Untitled

    Abstract: No abstract text available
    Text: S P SPT7 8 6 f T 10-BIT, 40 MSPS,160 mW A/D CONVERTER SIGNAL PROCESSING TECHNOLOGIES FEATURES APPLICATIONS • • • • • • • • • • • All High-Speed Applications Where Low Power Dissipation is Required • Video Imaging • Medical Imaging


    OCR Scan
    PDF 10-BIT, SPT7861 10-bit SPT7861 aE4aS17

    Untitled

    Abstract: No abstract text available
    Text: L M H 6 6 1 8 ,L M H 6 6 1 9 LMH6618 Single/LMH6619 Dual 130 MHz, 1.25 mA RRIO Operational Amplifiers Texa s In s t r u m e n t s Literature Number: SNOSAV7C Sem iconductor LM H 6618 S in g le /L M H 6 6 1 9 Dual 130 M Hz, 1.25 m A RR IO O pera tio n al A m p lifie rs


    OCR Scan
    PDF LMH6618 Single/LMH6619 LMH6618 LMH6619 LMH6619