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    ADZ11 - PNP Search Results

    ADZ11 - PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73128RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency PNP Transistor Array Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    ADZ11 - PNP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ADZ12

    Abstract: DTG-1200 DTG-2400 germanium DTG2400 adz11 dtg1200 2N513A 2N2075A 2N2075
    Text: POWER GERMANIUM PNP Item Number Part Number I C 5 10 15 20 >= 30 40 See Index See Index See Index Germanium Germanium SemieonTeeh Germanium See Index See Index See Index 15 15 15 15 15 15 15 15 15 15 ~~~~~~ ~eelndex ~~ 2N314S 2N2079 2N2079A 2N2S12 2Nl0318


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    PDF 2Nl147A 2NS778 2N1358A DTG2100 COT9408 DTG1040 2NS788 2N2075 2N2075A 2N314S ADZ12 DTG-1200 DTG-2400 germanium DTG2400 adz11 dtg1200 2N513A

    ASZ15

    Abstract: AF127 AF126 AF125 AF124 ASZ18 ASZ16 AF117 ADZ12 AF116
    Text: 52 T ran sistors Continued Notes Minimum value Average value Max. unilateralized power gain Max. frequency of oscillation With heat sink Max. total dissipation in free air at 25°C ambient temp. Vcbo: Max. collector-to-t»ase voltage, emitter open-circuited


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    PDF ADZ11 100kcnl AF114 ASY27 150mW 0mc111 ASY28 14mcl2> ASY29 ASZ15 AF127 AF126 AF125 AF124 ASZ18 ASZ16 AF117 ADZ12 AF116

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


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    PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711