Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    ADVANCED POWER TECHNOLOGY EUROPE Search Results

    ADVANCED POWER TECHNOLOGY EUROPE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPN8R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 32 A, 0.0084 Ohm@10V, TSON Advance Visit Toshiba Electronic Devices & Storage Corporation
    TPN19008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 34 A, 0.019 Ohm@10V, TSON Advance Visit Toshiba Electronic Devices & Storage Corporation
    TPN12008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 26 A, 0.0123 Ohm@10V, TSON Advance Visit Toshiba Electronic Devices & Storage Corporation
    SSM6J808R Toshiba Electronic Devices & Storage Corporation MOSFET, P-ch, -40 V, -7 A, 0.035 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation

    ADVANCED POWER TECHNOLOGY EUROPE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    thermistor ntc 50k

    Abstract: NTC 15K APT0406 thermistor 68k ADVANCED POWER TECHNOLOGY EUROPE ptc 96016 thermistor ntc 15k NTC Thermistor NTC 203 PTC NTC SENSORS
    Text: Application note APT0406 November 2004 Using NTC Temperature Sensors Integrated into Power Modules Pierre-Laurent Doumergue R&D Engineer Advanced Power Technology Europe Chemin de Magret 33700 Mérignac, France Introduction Most APTE Advanced Power Technology


    Original     		APT0406 thermistor ntc 50k NTC 15K APT0406 thermistor 68k ADVANCED POWER TECHNOLOGY EUROPE ptc 96016 thermistor ntc 15k NTC Thermistor NTC 203 PTC NTC SENSORS PDF

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR PDF

    5017BVR

    Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60 PDF

    APT6015LVR

    Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR PDF

    APT100GF60LR

    Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
    Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of


    Original     		PDF

    800w class d circuit diagram schematics

    Abstract: schematic diagram inverter 12v to 24v 1000w schematic diagram inverter 2000w SCHEMATIC WITH IR2153 1000w class d circuit diagram schematics 200w dc to ac inverter Circuit diagram AC to DC smps for plasma tv circuit diagram 12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM schematic diagram AC to DC converter 800W IRF 9234
    Text: POWER MANAGEMENT PRODUCT SELECTION GUIDE Volume 2 THE POWER MANAGEMENT LEADER 1 THE POWER MANAGEMENT LEADER: International Rectifier is a pioneer and world leader in advanced power management technology, from digital, analog and mixed signal ICs to advanced circuit devices, power systems, and components.


    Original     		PDF

    schematic diagram inverter 12v to 24v 1000w

    Abstract: 1000w class d circuit diagram schematics IRF 9234 schematic diagram inverter 12v to 24v 30a 12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM 800w class d circuit diagram schematics laptop LCD inverter SCHEMATIC 12vdc to 230vac mosfet inverter 700w audio amplifier circuit diagram schematic diagram inverter 2000w
    Text: POWER MANAGEMENT PRODUCT SELECTION GUIDE Volume 1 THE POWER MANAGEMENT LEADER 1 THE POWER MANAGEMENT LEADER: International Rectifier is a pioneer and world leader in advanced power management technology, from digital, analog and mixed signal ICs to advanced circuit devices, power systems, and components.


    Original     		PDF

    sot-227 footprint

    Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
    Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter PDF

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


    Original     		PDF

    mj 1504 transistor equivalent

    Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
    Text: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as


    Original     		PDF

    APT5010LVR

    Abstract: TO264 footprint APT5010B2VR 072K barco APT9902 094k SIL-PAD to-247 Orcus
    Text: APPLICATION NOTE By: APT9902 Denis Grafham CUTTING-EDGE MOUNT DOWN METHODS BOOST POWER SEMICONDUCTOR PERFORMANCE 1 APT9902 Cutting-Edge Mount Down Methods Boost Power Semiconductor Performance and Cut System Costs Denis Grafham, European Applications Advanced Power Technology


    Original     		APT9902 B-1330 O-264 APT5010LVR TO264 footprint APT5010B2VR 072K barco APT9902 094k SIL-PAD to-247 Orcus PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced v0.1 IGLOOTM Low-Power Flash FPGAs with Flash*FreezeTM Technology Features and Benefits Advanced I/O • • • • Low Power • • • • • • 1.2 V or 1.5 V Core Voltage for Low Power Supports Single-Voltage System Operation 5 µW Power Consumption in Flash*Freeze Mode


    Original     		130-nm, PDF

    9AB TRANSISTOR

    Abstract: No abstract text available
    Text: Advanced v0.3 IGLOOTM Low-Power Flash FPGAs with Flash*FreezeTM Technology Features and Benefits Advanced I/O • • • • Low Power • • • • • • 1.2 V or 1.5 V Core Voltage for Low Power Supports Single-Voltage System Operation 5 µW Power Consumption in Flash*Freeze Mode


    Original     		130-nm, 9AB TRANSISTOR PDF

    dflipflop

    Abstract: cortex-m1
    Text: Advanced v0.5 IGLOO Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits Advanced I/O • • • • Low Power • • • • • • 1.2 V or 1.5 V Core Voltage for Low Power Supports Single-Voltage System Operation 5 µW Power Consumption in Flash*Freeze Mode


    Original     		130-nm, 128vanced dflipflop cortex-m1 PDF

    hct192

    Abstract: CMOS decade counter phl 78 74HC 74HCT C1995 MM54HCT192 MM74HCT192
    Text: MM54HCT192 MM74HCT192 Synchronous Decade Up Down Counters General Description These high speed synchronous counters utilize advanced silicon-gate CMOS technology to achieve the high noise immunity and low power consumption of CMOS technology along with the speeds of low power Schottky TTL The


    Original     		MM54HCT192 MM74HCT192 MM74HCT192 hct192 CMOS decade counter phl 78 74HC 74HCT C1995 PDF

    application note 979

    Abstract: No abstract text available
    Text: Advanced v0.6 IGLOO Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits Advanced I/O • • • • Low Power • • • • • • 1.2 V or 1.5 V Core Voltage for Low Power Supports Single-Voltage System Operation 5 µW Power Consumption in Flash*Freeze Mode


    Original     		130-nm, 128anced application note 979 PDF

    P3B-12

    Abstract: equivalent ic of ca 3130 Zener Diode marking b27
    Text: Advanced v0.7 IGLOO Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits Advanced I/O • • • • Low Power • • • • • • 1.2 V or 1.5 V Core Voltage for Low Power Supports Single-Voltage System Operation 5 µW Power Consumption in Flash*Freeze Mode


    Original     		130-nm, P3B-12 equivalent ic of ca 3130 Zener Diode marking b27 PDF

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


    Original     		des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit PDF

    APT0405

    Abstract: TRANZORB IGBT parallel DRIVE OSCILLATION GE215 g3 diode "ADVANCED POWER TECHNOLOGY EUROPE" SP6 CASE TO SINK SP6 CASE TO SINK THERMAL RESISTANCE "SP6 CASE TO SINK" THERMAL RESISTANCE capacitor RG
    Text: Application note APT0405 November 2004 Parallel Connection of IGBT and MOSFET Power Modules. Serge Bontemps Product Manager Advanced Power Technology Europe Chemin de Magret 33700 Merignac, France Introduction Several dice are usually connected in parallel within high current power modules.


    Original     		APT0405 APT0405 TRANZORB IGBT parallel DRIVE OSCILLATION GE215 g3 diode "ADVANCED POWER TECHNOLOGY EUROPE" SP6 CASE TO SINK SP6 CASE TO SINK THERMAL RESISTANCE "SP6 CASE TO SINK" THERMAL RESISTANCE capacitor RG PDF

    3.5kw pfc

    Abstract: UC3854 for PFC 3.5kw 2kw uc3854 smps with uc2854 5010B2VR Power Factor Correction with the UC3854 UNITRODE Claudio de Sa e Silva uc3854 Application PFC 1.5kw 3kw smps pfc
    Text: APT 0101 By: Denis Grafham IMPROVED POWER MOSFETS BOOST EFFICIENCY IN A 3.5kW SINGLE PHASE PFC IMPROVED POWERMOSFETS BOOST EFFICIENCY IN A 3.5KW SINGLE PHASE PFC Author: Denis Grafham, European Applications, Advanced Power Technology, F-24300 Nontron Abstract:


    Original     		F-24300 NH03054. D-90471 UC1854/UC2854/UC3854 pp171-177, D-90471N 3.5kw pfc UC3854 for PFC 3.5kw 2kw uc3854 smps with uc2854 5010B2VR Power Factor Correction with the UC3854 UNITRODE Claudio de Sa e Silva uc3854 Application PFC 1.5kw 3kw smps pfc PDF

    EZ 941

    Abstract: 100K0 CM8870 CM8888 CM8888-2 MMD6150
    Text: ADVANCED PRODUCT INFORMATION CALIFORNIA MICRO CMOS Integrated DTMF Transceiver Features • Advanced CMOS technology for low power consumption and increased noise immunity • Complete DTMF Transmitter/Receiver


    OCR Scan     		CM8888/CM8888-1/CM8888-2 20-pin 28-pin cm8888 CM8888-2 CM8888-1 EZ 941 100K0 CM8870 MMD6150 PDF

    DTMF cm8880

    Abstract: No abstract text available
    Text: ADVANCED PRODUCT INFORMATION ^ CALIFORNIA MICRO DEVICES CM8880/CM8880-1/CM8880-2 CMOS Integrated DTMF Transceiver General Description Features • Advanced CMOS technology for low power consumption and increased noise immunity • Complete DTMF Transmitter/Receiver


    OCR Scan     		CM8880/CM8880-1/CM8880-2 20-pin 28-pin CMSS80 CM8880-2 CM8880 CM8880-1 DTMF cm8880 PDF

    tt 93 n 08

    Abstract: No abstract text available
    Text: PD - 9.1365A HEXFET Power MOSFET • • • • • Surface Mount IRFR120N Straight Lead (IRFU120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the


    OCR Scan     		IRFR120N) IRFU120N) tt 93 n 08 PDF