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    ADVANCED PHOTONIX Search Results

    ADVANCED PHOTONIX Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPN8R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 32 A, 0.0084 Ohm@10V, TSON Advance Visit Toshiba Electronic Devices & Storage Corporation
    TPN19008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 34 A, 0.019 Ohm@10V, TSON Advance Visit Toshiba Electronic Devices & Storage Corporation
    TPN12008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 26 A, 0.0123 Ohm@10V, TSON Advance Visit Toshiba Electronic Devices & Storage Corporation
    SSM6J808R Toshiba Electronic Devices & Storage Corporation MOSFET, P-ch, -40 V, -7 A, 0.035 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation

    ADVANCED PHOTONIX Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Non-Cooled Large Area Blue Silicon Avalanche Photodiode SD 630-70-74-500 Advanced Photonix, Inc. PACKAGE DIMENSIONS INCHES Connector center pin cathode Connector outer jacket anode SHV PACKAGE FEATURES DESCRIPTION APPLICATIONS • Low noise • High gain • High Speed


    Original     		PDF 675nm

    avalanche photodiode bias and high voltage

    Abstract: avalanche Photodiode 300 nm
    Text: Non-Cooled Large Area Blue Silicon Avalanche Photodiode SD 630-70-74-500 Advanced Photonix, Inc. PACKAGE DIMENSIONS INCHES Connector center pin cathode Connector outer jacket anode SHV PACKAGE FEATURES DESCRIPTION APPLICATIONS • Low noise • High gain • High Speed


    Original     		PDF 675nm 675nm avalanche photodiode bias and high voltage avalanche Photodiode 300 nm

    Untitled

    Abstract: No abstract text available
    Text: Non-Cooled Large Area Blue Silicon Avalanche Photodiode SD 630-70-74-500 Advanced Photonix, Inc. PACKAGE DIMENSIONS INCHES Connector center pin cathode Connector outer jacket anode SHV PACKAGE FEATURES DESCRIPTION APPLICATIONS • Low noise • High gain • High Speed


    Original     		PDF 675nm 675nm

    Untitled

    Abstract: No abstract text available
    Text: Non-Cooled Large Area Red Silicon Avalanche Photodiode SD 630-70-72-500 Advanced Photonix, Inc. PACKAGE DIMENSIONS INCHES Connector center pin cathode Connector outer jacket anode SHV PACKAGE FEATURES DESCRIPTION APPLICATIONS • Low noise • High gain • High Speed


    Original     		PDF 675nm 675nm

    PDB-C609-3

    Abstract: PDB-C609
    Text: Solderable Silicon Photodiodes PDB-C609-3 Advanced Photonix, Inc. PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] ±.050 [1.27] 1.00 [25.4] 30 AWG BUSS WIRE, ANODE .021 [0.53] .014 [0.36] BACKSIDE METAL, CATHODE CHIP DIMENSIONS INCH [mm] CHIP DIMENSIONS INCH [mm]


    Original     		PDF PDB-C609-3 PDB-C609-3 4x10-13 660nm PDB-C609

    SHV CONNECTOR

    Abstract: qe connector
    Text: Non-Cooled Large Area Red Silicon Avalanche Photodiode SD 630-70-72-500 Advanced Photonix, Inc. PACKAGE DIMENSIONS INCHES Connector center pin cathode Connector outer jacket anode SHV PACKAGE FEATURES DESCRIPTION APPLICATIONS • Low noise • High gain • High Speed


    Original     		PDF 675nm 675nm SHV CONNECTOR qe connector

    avalanche photodiode

    Abstract: avalanche Photodiode 300 nm
    Text: Non-Cooled Large Area Red Silicon Avalanche Photodiode SD 630-70-72-500 Advanced Photonix, Inc. PACKAGE DIMENSIONS INCHES Connector center pin cathode Connector outer jacket anode SHV PACKAGE FEATURES DESCRIPTION APPLICATIONS • Low noise • High gain • High Speed


    Original     		PDF 675nm avalanche photodiode avalanche Photodiode 300 nm

    PDI-E803

    Abstract: No abstract text available
    Text: GaAlAs High Power IR LED Emitters PDI-E803 Advanced Photonix, Inc. PACKAGE DIMENSIONS INCH [mm] CL 0.145 [3.68] 0.229 [5.82] 0.218 [5.54] 45° 0.040 [1.02] CL 1.00 [25.4] MIN 0.189 [4.80] 0.040 [1.02] 0.029 [0.74] Ø0.019 [0.48] Ø0.016 [0.41] CL Ø0.195 [4.95]


    Original     		PDF PDI-E803 PDI-E803

    PDI-E801

    Abstract: AN-880
    Text: GaAlAs High Power IR LED Emitters PDI-E801 Advanced Photonix, Inc. PACKAGE DIMENSIONS INCH [mm] CL 0.145 [3.68] 45° 0.040 [1.02] 1.00 [25.4] MIN 0.145 [3.68] CL 0.112 [2.84] 0.098 [2.49] Ø0.019 [0.48] Ø0.016 [0.41] CL Ø0.195 [4.95] Ø0.178 [4.52] 0.100 [2.54]


    Original     		PDF PDI-E801 PDI-E801 AN-880

    Untitled

    Abstract: No abstract text available
    Text: GaAlAs High Power IR LED Emitters PDI-E825 Advanced Photonix, Inc. PACKAGE DIMENSIONS INCH [mm] CL 45° 0.040 [1.02] 0.145 [3.68] 1.00 [25.4] MIN CL 0.222 [5.64] Ø0.019 [0.48] Ø0.016 [0.41] CL 0.100 [2.54] Ø0.230 [5.84] CATHODE CL ANODE AND CASE L.E.D.


    Original     		PDF PDI-E825 PDI-E825

    Untitled

    Abstract: No abstract text available
    Text: Advanced Photonix, Inc. 1240 Avenida Acaso Camarillo, CA 93012 805 987-0146 InGaAs Photodiodes These InGaAs photodiodes have high sensitivity low noise characteristics, which makes them optimum for industrial and medical applications. The devices detect light from 800 nm to 1700 nm. The


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAlAs High Power IR LED Emitters PDI-E801 Advanced Photonix, Inc. PACKAGE DIMENSIONS INCH [mm] CL 0.145 [3.68] 45° 0.040 [1.02] 1.00 [25.4] MIN 0.145 [3.68] CL 0.112 [2.84] 0.098 [2.49] Ø0.019 [0.48] Ø0.016 [0.41] CL Ø0.195 [4.95] Ø0.178 [4.52] 0.100 [2.54]


    Original     		PDF PDI-E801 PDI-E801

    uv photodiode

    Abstract: PDU-G102B 320nm
    Text: UV Enhanced GaN Detectors PDU-G102B Advanced Photonix, Inc. PACKAGE DIMENSIONS INCH [mm] Ø.210 [5.35] .055 [1.40] 2X Ø.017 [0.43] Ø .118 [3.00] CATHODE VIEWING ANGLE 61° ANODE .100 [2.54] .500 [12.70] Ø.181 [4.60] .087 [2.21] CHIP CHIP DIMENSIONS INCH [mm]


    Original     		PDF PDU-G102B 320nm PDU-G102B 200nm 350nm uv photodiode

    AN-880

    Abstract: PDI-E802
    Text: GaAlAs High Power IR LED Emitters PDI-E802 Advanced Photonix, Inc. PACKAGE DIMENSIONS INCH [mm] CL 0.145 [3.68] 45° 0.040 [1.02] 1.00 [25.4] MIN 0.145 [3.68] CL 0.082 [2.08] Ø0.019 [0.48] Ø0.016 [0.41] CL Ø0.195 [4.95] Ø0.178 [4.52] 0.100 [2.54] CATHODE


    Original     		PDF PDI-E802 PDI-E802 AN-880

    Untitled

    Abstract: No abstract text available
    Text: GaAlAs High Power IR LED Emitters PDI-E802 Advanced Photonix, Inc. PACKAGE DIMENSIONS INCH [mm] CL 0.145 [3.68] 45° 0.040 [1.02] 1.00 [25.4] MIN 0.145 [3.68] CL 0.082 [2.08] Ø0.019 [0.48] Ø0.016 [0.41] CL Ø0.195 [4.95] Ø0.178 [4.52] 0.100 [2.54] CATHODE


    Original     		PDF PDI-E802 PDI-E802

    Untitled

    Abstract: No abstract text available
    Text: GaAlAs High Power IR LED Emitters PDI-E805 Advanced Photonix, Inc. CL 0.145 [3.68] PACKAGE DIMENSIONS INCH [mm] 45° 0.040 [1.02] 1.00 [25.4] MIN CL 0.222 [5.64] Ø0.019 [0.48] Ø0.016 [0.41] CL 0.100 [2.54] Ø0.230 [5.84] CATHODE CL ANODE AND CASE L.E.D.


    Original     		PDF PDI-E805 PDI-E805

    PDI-E805

    Abstract: No abstract text available
    Text: GaAlAs High Power IR LED Emitters PDI-E805 Advanced Photonix, Inc. CL 0.145 [3.68] PACKAGE DIMENSIONS INCH [mm] 45° 0.040 [1.02] 1.00 [25.4] MIN CL 0.222 [5.64] Ø0.019 [0.48] Ø0.016 [0.41] CL 0.100 [2.54] Ø0.230 [5.84] CATHODE CL ANODE AND CASE L.E.D.


    Original     		PDF PDI-E805 PDI-E805

    PDI-E825

    Abstract: No abstract text available
    Text: GaAlAs High Power IR LED Emitters PDI-E825 Advanced Photonix, Inc. PACKAGE DIMENSIONS INCH [mm] CL 0.145 [3.68] 45° 0.040 [1.02] 1.00 [25.4] MIN CL 0.222 [5.64] Ø0.019 [0.48] Ø0.016 [0.41] CL 0.100 [2.54] Ø0.230 [5.84] CATHODE CL ANODE AND CASE L.E.D.


    Original     		PDF PDI-E825 PDI-E825

    Untitled

    Abstract: No abstract text available
    Text: GaAlAs High Power IR LED Emitters PDI-E803 Advanced Photonix, Inc. FEATURES DESCRIPTION • High output power • High reliability • Narrow emission angle APPLICATIONS The PDI-E803 is an 880 nm high power GaAlAs infrared emitter, packaged in a hermetic TO-46


    Original     		PDF PDI-E803 PDI-E803

    InGaAs photodiode spectral response

    Abstract: Advanced Photonix pin InGaAs chip
    Text: InGaAs Photodetectors SD 060-11-41-211 Advanced Photonix, Inc. PACKAGE DIMENSIONS INCH [mm] 0.075 [1.90] 3X Ø0.018 [0.5] Ø0.360 [9.14] Ø0.240 [6.10] 1 Ø0.200 [Ø5.08] PIN CIRCLE Ø0.325 [8.25] 113° 2 3 CHIP 0.165 [4.19] BOTTOM VIEW 0.50 [12.7] CHIP DIMENSIONS INCH [mm]


    Original     		PDF 1310nm, 1310nm 79X10-14 1310nm InGaAs photodiode spectral response Advanced Photonix pin InGaAs chip

    SD441-23-41-221

    Abstract: Advanced Photonix Inc high speed laser detector
    Text: Advanced Photonix, Inc. 1240 Avenida Acaso Camarillo, CA 93012 805 987-0146 SD441-23-41-221 Quad NIR Enhanced Silicon P-Type Detector The SD441-23-41-221 features a large area 1064nm enhanced high voltage P-type silicon segmented quadrant detector mounted in a


    Original     		PDF SD441-23-41-221 1064nm 1064nm, Advanced Photonix Inc high speed laser detector

    PDI-E804

    Abstract: No abstract text available
    Text: GaAlAs High Power IR LED Emitters PDI-E804 Advanced Photonix, Inc. PACKAGE DIMENSIONS INCH [mm] CL 0.145 [3.68] 45° 0.040 [1.02] 1.00 [25.4] MIN 0.100 [2.54] MAX CL Ø0.019 [0.48] Ø0.016 [0.41] CL 0.100 [2.54] Ø0.168 [4.27] CATHODE CL ANODE AND CASE L.E.D.


    Original     		PDF PDI-E804 PDI-E804

    Untitled

    Abstract: No abstract text available
    Text: GaAlAs High Power IR LED Emitters PDI-E804 Advanced Photonix, Inc. PACKAGE DIMENSIONS INCH [mm] CL 0.145 [3.68] 45° 0.040 [1.02] 1.00 [25.4] MIN 0.100 [2.54] MAX CL Ø0.019 [0.48] Ø0.016 [0.41] CL 0.100 [2.54] Ø0.168 [4.27] CATHODE CL ANODE AND CASE L.E.D.


    Original     		PDF PDI-E804 PDI-E804

    Untitled

    Abstract: No abstract text available
    Text: CONTENTS Advanced Photonix Capabilities. 2 PIN Photodiode Theory o f O p eratio n.6 Glossary o f T e rm s. 8


    OCR Scan     		PDF