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    ADVANCED Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPN8R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 32 A, 0.0084 Ohm@10V, TSON Advance Visit Toshiba Electronic Devices & Storage Corporation
    TPN19008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 34 A, 0.019 Ohm@10V, TSON Advance Visit Toshiba Electronic Devices & Storage Corporation
    TPN12008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 26 A, 0.0123 Ohm@10V, TSON Advance Visit Toshiba Electronic Devices & Storage Corporation
    SSM6J808R Toshiba Electronic Devices & Storage Corporation MOSFET, P-ch, -40 V, -7 A, 0.035 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    SF Impression Pixel

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    Texas Instruments ADVANCED-BQMTESTER

    BOARD ADV MULTI-CH TEST & PROG
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    DIGIKEY KIT ADVANCEDHANDSOLDERING

    SOLDERING FOR ELECTRONICS ASSEM
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    Fluke Networks FTADVANCED-75X

    NAVATEK ENGINEERING KIT
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    Nihon Pulse Industry Co Ltd CMD-4CR-EV-ADVANCED

    Commander 4-axis controller kit
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    IDEC Corporation TRAINING-OPTION5-ADVANCED

    3DAY TRAINING FEE ADVANCED KIT
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    ADVANCED Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    0003-3111-011 Advanced Photonix INGAAS, 0.06MM, TO-46 Original PDF
    0003-3111-111 Advanced Photonix INGAAS, 0.06MM AA, TO-46 ISO Original PDF
    0008-3111-011 Advanced Photonix INGAAS, 0.10MM, TO-46 Original PDF
    0008-3111-111 Advanced Photonix INGAAS, 0.10MM AA, TO-46 ISO Original PDF
    002-151-001 Advanced Photonix PHOTODIODE 800-1700NM .05MM 1206 Original PDF
    003-151-001 Advanced Photonix PHOTODIOD 800-1700NM .075MM 1206 Original PDF
    004-11-41-211 Advanced Photonix PHOTODETECTOR BALL TO-46 Original PDF
    0050-3111-011 Advanced Photonix INGAAS, 0.25MM, TO-46 Original PDF
    0050-3111-111 Advanced Photonix INGAAS, 0.25MM AA, TO-46 ISO Original PDF
    008-11-41-211 Advanced Photonix SENSOR PHOTODIODE TO46-3 Original PDF
    008-2151-112 Advanced Photonix UV-A SENSOR, GAN, TO-46 Original PDF
    008-2161-112 Advanced Photonix UV-B SENSOR, ALGAN, TO-46 Original PDF
    008-2171-112 Advanced Photonix UV-C SENSOR, ALGAN, TO-46 Original PDF
    0090-3111-185 Advanced Photonix PHOTODIODE 800-1700NM SMD 1206 Original PDF
    012-11-41-211 Advanced Photonix SENSOR PHOTODIODE TO46-3 Original PDF
    012-121-011 Advanced Photonix PHOTODIODE 10V 0.3MM TO46 Original PDF
    012-151-001 Advanced Photonix PHOTODIODE 800-1700NM .3MM 1206 Original PDF
    012-70-62-541 Advanced Photonix High Speed Small Area APDs Original PDF
    012-UVA-011 Advanced Photonix PHOTODIODE UV 220-370NM TO46 Original PDF
    012-UVB-011 Advanced Photonix PHOTODIODE UV 220-320NM TO46 Original PDF
    ...

    ADVANCED Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Low Drop Out Regulators

    Abstract: 7585C DIL 16
    Text: o UCC2930-3\UCC3930-3 IIMTKORATKO C IR C U IT S ADVANCED INFORMATION UNITRODE Cellular Telephone Power Converter DESCRIPTION FEATURES BiCMOS Low Power RF/Cellular power management Negative 2.5 Volt @ 5 m A regulator for GaAs MESFET Separate Micro-power 3.3 V logic


    OCR Scan     		UCC2930-3\UCC3930-3 UCC2930-3\UCC3930-3 Low Drop Out Regulators 7585C DIL 16 PDF

    toshiba p300

    Abstract: kd qa
    Text: INTEGRATED T O SH IB A 8 -B IT CIRCUIT TECHNICAL TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC74ACT299P/F/FW DATA SILICON MONOLITHIC PIPO SHIFT REGISTER WITH ASYNCHRONOUS CLEAR The TC74ACT299 is an advanced high speed CMOS 8-BIT PIPO SHIFT REGISTER fabricated with silicon gate and


    OCR Scan     		TC74ACT299P/F/FW TC74ACT299 20PIN 20PIN 300mil 685TYP toshiba p300 kd qa PDF

    TC74AC373

    Abstract: No abstract text available
    Text: INTEGRATED T O SH IB A CIRCUIT TECHNICAL TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC74AC37BP/F/FW/FS DATA SILICON MONOLITHIC OCTAL D -TYP E LATCH WITH 3 -STATE OUTPUT The TC74AC373 is an advanced high speed CMOS OCTAL LATCH with 3 - STATE OUTPUT fabricated with silicon


    OCR Scan     		TC74AC37BP/F/FW/FS TC74AC373 20PIN 300mil 685TYP 20PIN PDF

    74ALS05

    Abstract: diode sy 106 diode sy 180 10
    Text: TOSHIBA TENTATIVE TC74VHC05F/FN/FT TO SH IBA C M O S DIGITAL INTEGRATED CIRCUIT SILICON M O N O LITH IC TC74VHC05F, TC74VHC05FN, TC74VHC05FT HEX INVERTER OPEN DRAIN _ The TC74VHC05 is an advanced high speed CMOS INVERTER fabricated with silicon gate C2MOS technology.


    OCR Scan     		TC74VHC05F/FN/FT TC74VHC05F, TC74VHC05FN, TC74VHC05FT TC74VHC05 TC74VHC04, 74ALS05 diode sy 106 diode sy 180 10 PDF

    A9RV

    Abstract: 5s a315 A327
    Text: TOSHIBA TC514900AJLL-70/80 524,288 WORD X 9 BIT DYNAMIC RAM DESCRIPTION The TC514900AJLL is the new generation dynamic RAM organized 524,288 word by 9 bit. The TC514900AJLL utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit


    OCR Scan     		TC514900AJLL-70/80 TC514900AJLL TC514900AJLI/70/80 TC514900AJLL70/80 A9RV 5s a315 A327 PDF

    UFNF430

    Abstract: diode ed 2437 UFNF432
    Text: POWER MOSFET TRANSISTORS U F N F 4 3 0 U F N F 4 3 1 500 Volt, 1.5 Ohm N-Channel U F N F 4 3 2 U F N F 4 3 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rostom and a high transconductance.


    OCR Scan     		UFNF430 UFNF431 UFNF432 UFNF433 UFNF430 diode ed 2437 UFNF432 PDF

    K2545

    Abstract: cx 2808 tlc2652 TLC2652A D3157
    Text: TLC2652, TLC2652A Advanced LinCMOS1 PRECISION CHOPPER-STABILIZED OPERATIONAL AMPLIFIERS D3157, SEPTEMBER 1988 0008, JG, or P PACKAGE Extremely Low Offset Voltage . . 1 nV Max TOP VIEW Extremely Low Change in Offset Voltage with Temperature . . . 0.003nV/°CTyp


    OCR Scan     		TLC2652, TLC2652A D3157, 003nV/ TLC2652 K2545 cx 2808 D3157 PDF

    UC494

    Abstract: No abstract text available
    Text: SSSSSÄ UNITRODE UC494A UC495A UC494AC UC495AC Advanced Regulating Pulse Width Modulators FEATURES • Dual u n com m itted 40V, 2 0 0 m A output tran sistors » 1% a ccu rate 5V reference • Dual error am p lifie rs • W ide range, v a riab le dead tim e


    OCR Scan     		UC494A UC495A UC494AC UC495AC C495A: UC495A) UC494 PDF

    260-pin

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1864J/FT-10/12/15 PRELIMINARY SILICON GATE CMOS 65,536 WORD x 18 BIT CMOS STATIC RAM Description TheTC55V1864J/FT is a 1,179,648 bit high speed CMOS static random access memory organized as 65,536 words by 18 bits and operated from a single 3.3V : upply. Toshiba’s advanced CMOS technology and circuit design enable high speed operation.


    OCR Scan     		TC55V1864J/FT-10/12/15 TheTC55V1864J/FT TC55V1864J/FT TC55V1864J/ B-143 260-pin PDF

    AC5947N

    Abstract: HDSP-6508 AC5947NF 75498 AC5947 DIGITAL IC 7493 ic 7493 supply voltage power supply current 12 pin 4 digit 7 segment display SN7694N
    Text: ADVANCED C IR C U IT S PRELIM INARY AC5947N 18-SEGMENT D IS P L A Y DRIVER 12/11/79 N O R N F D U AL-IN-LINE PACKAGE TO P VIEW On chip latches for the A S C II input data ’C Output enable for display blanking and duty cycle dimming u *[ »C •c ’[


    OCR Scan     		AC5947N 18-SEGMENT ASC11 e00-inch 24-mm) 400-inch 16-mm) AC5947NF. HDSP-6508 AC5947NF 75498 AC5947 DIGITAL IC 7493 ic 7493 supply voltage power supply current 12 pin 4 digit 7 segment display SN7694N PDF

    ic 6283 circuit diagram

    Abstract: amplifier ic 6283 amplifier circuit using 6283 d 6283 ic
    Text: IN T E G R A T E D C IR C U I T S UC1853 UC2853 UC3853 U N IT R Q D E ADVANCED INFORMATION High Power Factor Preregulator Complete 8-pin Power Factor Solution Reduced External Components RMS Line Voltage Compensation Precision Multiplier/Squarer/Divider Internal 75kHz


    OCR Scan     		UC1853 UC2853 UC3853 75kHz UC1854, ic 6283 circuit diagram amplifier ic 6283 amplifier circuit using 6283 d 6283 ic PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC74LVX4245FS Dual Supply Octal B u s Transceiver The TC74LVX4245 is a dual supply, advanced high speed C M O S O CTAL B U S T R A N SC E IV E R fabricated with silicon gate C M O S technology. Designed for use as an interface between a 5V bus and a


    OCR Scan     		TC74LVX4245FS TC74LVX4245 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC7WH74FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7WH74FU D-TYPE FLIP FLOP WITH PRESET AND CLEAR The TC7WH74FU is an advanced high speed CMOS D-FLIP FLOP fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent


    OCR Scan     		TC7WH74FU TC7WH74FU PDF

    BE423

    Abstract: No abstract text available
    Text: TOSHIBA TC5118325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC5118325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC5118325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to pro­


    OCR Scan     		TC5118325BJ/BFT-70 TC5118325BJ/BFT TC5118325BJ/ 400mil) I/024 I/025 I/032 BE423 PDF

    ufn440

    Abstract: UFN441
    Text: POWER MOSFET TRANSISTORS UFN440 UFN441 UFN442 UFN443 500 Volt, 0.85 Ohm N-Channel FEA TU RES D ESCRIPTIO N • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low R dscow and a high transconductance.


    OCR Scan     		UFN440 UFN441 UFN442 UFN443 UFN441 UFN442 PDF

    TC5117800bnt-60

    Abstract: TC5117800B
    Text: TOSHIBA TC5117800BNJ/BNT-60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM Description The TC5117800BNT is the fast page dynamic RAM organized 2,097,152 words by 8 bits. The TC5117800BNT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,


    OCR Scan     		TC5117800BNJ/BNT-60/70 TC5117800BNT TC5117800bnt-60 TC5117800B PDF

    UFN432

    Abstract: mosfet UFN432 UFN 432 UFN431 UFN433
    Text: POWER MOSFET TRANSISTORS 500 Volt, 1.5 Ohm N-Channel UFN430 UFN431 UFN432 UFN433 FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance.


    OCR Scan     		UFN430 UFN431 UFN432 UFN433 UFN430 UFN431 UFN432 mosfet UFN432 UFN 432 UFN433 PDF

    TC160G

    Abstract: toshiba LGA Nand TC170C14 TC26SC TC170C1 TC170C29
    Text: TOSHIBA TC170C CMOS Standard Cell 0.7\xm , 5.0V ASICs The 0.7nm, 5V TC170C allows higher area efficiency, system performance and device integration with lower power than previous generation 5V standard cell products Benefits • Advanced 0.7 micron CMOS process with fast 250ps gate


    OCR Scan     		TC170C 250ps TC160G toshiba LGA Nand TC170C14 TC26SC TC170C1 TC170C29 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC7SH04F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SH04F, TC7SH04FU INVERTER The TC7SH04 is an advanced high speed CMOS INVERTER fabricated with silicon gate C2MOS technology. It achieves The high speed operation similar to equivalent


    OCR Scan     		TC7SH04F/FU TC7SH04F, TC7SH04FU TC7SH04 PDF

    ac201

    Abstract: ac199
    Text: TC74ACT175P/F/FN QUAD D-TYPE FLIP FLOP WITH CLEAR The TC74ACT17S is an advanced high speed CMOS QUAD D -T Y P E F L IP -F L O P fabricated with silicon gate and double-layer m etal w iring CMOS technology. It achieves the high speed operation sim ilar to equivalent


    OCR Scan     		TC74ACT175P/F/FN TC74ACT17S AC-201 ac201 ac199 PDF

    TLCS-90

    Abstract: No abstract text available
    Text: TO SH IBA TMP90C846 CMOS 8-BIT MICROCONTROLLER TMP90C846F 1. OUTLINE AND CHARACTERISTICS The TMP90C846 is an advanced 8-bit microcontroller developed for application in the control of HDD/FDD high-speed mechanisms. The built-in functions include a high­ speed A/D converter minimum sampling rate: 400ns @ 10MHz with an external start


    OCR Scan     		TMP90C846 TMP90C846F TMP90C846 400ns 10MHz) 44-pin QFP44-P-1414D) TMP90C846. TLCS-90 PDF

    2N6797

    Abstract: No abstract text available
    Text: POWER MOSFET TRANSISTORS JTX JTXV 200 Volt, 0.4 Ohm N-Channel DESCRIPTION The U nitrode power M O SFET design u tilizes the m ost advanced technology available. This efficien t design ach ieves a very low Rosiom and a high transconductance. FEATURES • Fast Sw itching


    OCR Scan     		2N6797 2N6798 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 4,194,304 WORD x 1 BIT DYNAMIC RAM DESCRIPTION The TC514101AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514101AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating m argins, both internally and to the system user.


    OCR Scan     		TC514101AP/AJ/ASJ/AZ 300/350mil) TC514101AP/ASJ/AZ. TC514101AP/AJ/ASJ/A2-70, TC514101AP/AJ/ASJ/AZ-80 TC514101AP/AJ/ASJ/AZ-10 PDF

    TC514265DJ

    Abstract: TC514265D TC514265 SOJ40-P-400
    Text: TOSHIBA TC514265DJ/DFT-50/60/70 PRELIMINARY 262,144 WORD X 16 BIT EDO HYPER PAGE DYNAMIC RAM Description TheTC514265DJ/DFT is an EDO (hyper page) dynamic RAM organized as 262,144 words by 16 bits. TheTC514265DJ/ DFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide oper­


    OCR Scan     		TC514265DJ/DFT-50/60/70 TheTC514265DJ/DFT TheTC514265DJ/ TC514265DJ/DFT TC514265D J/DFT-50/60/70 DR04041293 TC514265DJ TC514265 SOJ40-P-400 PDF