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    ADSH 13 Search Results

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    WED2DL36513V25BC

    Abstract: WED2DL36513V35BC WED2DL36513V38BC WED2DL36513V40BC WED2DL36514V25BC WED2DL36514V35BC WED2DL36514V38BC
    Text: WED2DL36513V WED2DL36513AV 512Kx36 Synchronous Pipeline Burst SRAM PRELIMINARY* FEATURES DESCRIPTION • Fast clock speed: 200, 166, 150 & 133MHz The WEDC SyncBurst - SRAM family employs high-speed, lowpower CMOS designs that are fabricated using an advanced


    Original     		PDF WED2DL36513V WED2DL36513AV 512Kx36 133MHz WED2DL36514AV25BC 512Kx36 WED2DL36514AV35BC WED2DL36514AV38BC WED2DL36513V25BC WED2DL36513V35BC WED2DL36513V38BC WED2DL36513V40BC WED2DL36514V25BC WED2DL36514V35BC WED2DL36514V38BC

    Untitled

    Abstract: No abstract text available
    Text: SSRAM AS5SS256K36 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM FEATURES z z z z z z z z z z z OPTIONS z z MARKING -8.5* -10 DQ 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 80 79 78 77 76


    Original     		PDF AS5SS256K36 100-pin 100-lea AS5SS256K36 -40oC 85oC1 -55oC 125oC

    Untitled

    Abstract: No abstract text available
    Text: SSRAM AS5SS256K36 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM FEATURES z z z z z z z z z z z OPTIONS z z MARKING -8.5* -10 DQ 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 80 79 78 77 76


    Original     		PDF AS5SS256K36 100-pin 100-lea AS5SS256K36 -40oC 85oC1 -55oC 125oC

    Untitled

    Abstract: No abstract text available
    Text: SB61S1024B Silicon-Based Technology Very High Speed and Low Power Memory 32Kx 32 BURST-PIPELINED CMOS SYNCHRONOUS SRAM PRELIMINARY Description: The SB61S1024B series products are 32,768-words by 32-bits burst-pipelined CMOS synchronous SRAMs fabricated with advanced 8" wafer submicron CMOS technology. Using advanced


    Original     		PDF SB61S1024B SB61S1024B 768-words 32-bits 100-pin

    cd 555

    Abstract: WED2DL36513V25BC WED2DL36513V35BC WED2DL36513V38BC WED2DL36513V38BI WED2DL36513V40BC WED2DL36513V40BI
    Text: WED2DL36513V White Electronic Designs 512Kx36 Synchronous Pipeline Burst SRAM FEATURES DESCRIPTION • Fast clock speed: 200, 166, 150 & 133MHz The WEDC SyncBurst - SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 16Mb


    Original     		PDF WED2DL36513V 512Kx36 133MHz 512Kx36, WED2DL36513V25BC 512Kx36 WED2DL36513V35BC WED2DL36513V38BC WED2DL36513V40BC cd 555 WED2DL36513V25BC WED2DL36513V35BC WED2DL36513V38BC WED2DL36513V38BI WED2DL36513V40BC WED2DL36513V40BI

    11 ak 30 a4

    Abstract: adsh 13 SB61S1024B-4 SB61S1024B-5
    Text: SB61S1024B Silicon-Based Technology Very High Speed and Low Power Memory 32Kx 32 BURST-PIPELINED CMOS SYNCHRONOUS SRAM PRELIMINARY Description: The SB61S1024B series products are 32,768-words by 32-bits burst-pipelined CMOS synchronous SRAMs fabricated with advanced 8" wafer submicron CMOS technology. Using advanced


    Original     		PDF SB61S1024B SB61S1024B 768-words 32-bits 100-pin 11 ak 30 a4 adsh 13 SB61S1024B-4 SB61S1024B-5

    ftr 02

    Abstract: F.TR.02 19 IDT BH package marking marking a7r
    Text: AL5DS9xx9V Data Sheets 3.3V Synchronous Dual-Port SRAM AL5DS9349V/59V/69V/79V/89V 4K/8K/16K/32K/64K x 18 AL5DS9269V/79V/89V 16K/32K/64K x 16 AL5DS9149V/59V/69V/79V/89V/99V 4K/8K/16K/32K/64K/128K x 9 AL5DS9069V/79V/89V/99V 16K/32K/64K/128K x 8 Preliminary AL5DS9xx9V


    Original     		PDF AL5DS9349V/59V/69V/79V/89V 4K/8K/16K/32K/64K AL5DS9269V/79V/89V 16K/32K/64K AL5DS9149V/59V/69V/79V/89V/99V 4K/8K/16K/32K/64K/128K AL5DS9069V/79V/89V/99V 16K/32K/64K/128K 2002-Copyright ftr 02 F.TR.02 19 IDT BH package marking marking a7r

    Untitled

    Abstract: No abstract text available
    Text: tm TE CH Preliminary T35L3232B SYNCHRONOUS BURST SRAM 32K x 32 SRAM FEATURES GENERAL DESCRIPTION ¡E FT pin for user configurable pipeline or flow-through operation. ¡E Fast Access times: - Pipeline – 3.8 / 4 / 4.5 ns - Flow-through – 9 / 10 / 11ns ¡ESingle 3.3V +0.3V/-0.165V power supply


    Original     		PDF T35L3232B

    T35L6432B

    Abstract: No abstract text available
    Text: tm TE CH Preliminary T35L6432B SYNCHRONOUS BURST SRAM 64K x 32 SRAM Pipeline and Flow-Through Burst Mode T35L6432B-4T FEATURES ¡E FT pin for user configurable pipeline or flowthrough operation. ¡E Fast Access times: - Pipeline – 3.8 / 4 / 4.5 / 5 ns - Flow-through – 9 / 10 / 11 / 12 ns


    Original     		PDF T35L6432B T35L6432B-4T 100-LEAD T35L6432B

    AMBE 2

    Abstract: NET-2000 AMBE-1000 AMBE-2000 ambe2 4P4C handset NET2000 audio sender wireless AMBE-2020 VOCODERS voip
    Text: Digital Voice Systems, Inc. The Speech Compression Specialists Net-2000 Voice Codec Unit User’s Manual Version 1.0 March 2004 Net-2000 Voice Codec Unit User’s Manual Version 1.0, March 2004 Copyright, 2004 Digital Voice Systems, Inc 234 Littleton Road


    Original     		PDF Net-2000 Net-2000 Net-2000TM AMBE 2 AMBE-1000 AMBE-2000 ambe2 4P4C handset NET2000 audio sender wireless AMBE-2020 VOCODERS voip

    A63G7332

    Abstract: No abstract text available
    Text: A63G7332 Series PRELIMINARY November 1997, Version 1.0 128K X 32 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output Features Fast access times: 4.5/5/5.5 ns Single +3.3V+10% or +3.3V-5% power supply Separate +2.5V+0.4V/-0.12V isloated ouptut buffer


    Original     		PDF A63G7332 100-pin

    80486 microprocessor pin out diagram

    Abstract: ZL112 80486 microprocessor block diagram and pin diagram CY7C1031 CY7C1032 80486 microprocessor circuit diagram block diagram of processor 80486 wd153 intel 80486 pin diagram i486 sx
    Text: CY7C1031 CY7C1032 CYPRESS 64K x 18 Synchronous Cache RAM Functional Description Features • Supports 66-MHz Pentium microprocessor cache sys­ tems with zero wait states • 64K by 18 common I/O • Fast clock-to-output times — 8.5 ns • Two-bit wraparound counter supporting Pentium mi­


    OCR Scan     		PDF 66-MHz 7C1031) 7C1032) 52-pin CY7C1031 CY7C1032 CY7C1031 CY7C1032 80486 microprocessor pin out diagram ZL112 80486 microprocessor block diagram and pin diagram 80486 microprocessor circuit diagram block diagram of processor 80486 wd153 intel 80486 pin diagram i486 sx

    Untitled

    Abstract: No abstract text available
    Text: CY7C1331 CY7C1332 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR Features • Direct interface with the processor and external cache controller • Supports 50-M Hz Pentium processor cache systems with zero wait states • Asynchronous output enable T h e CY7C1331 is designed fo r Intel Pen­


    OCR Scan     		PDF CY7C1331 CY7C1332 CY7C1331 CY7C1332 52-Lead

    MT58LC32K32C5

    Abstract: z3-z1 D01400 LG ctv circuit diagram
    Text: PRELIMINARY SYNCHRONOUS SRAM 32K x 32/36 SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • Fast access times: 4.5, 5, 6, 7, 8 and 9ns Fast O E# access times: 4.5,5 and 6ns Single +3.3V +10%/-5% p ow er supply


    OCR Scan     		PDF MT58LC32K32/36C5 MT58LC32KA2/36C5 MT58LC32K32C5 z3-z1 D01400 LG ctv circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MT58LC128K16C6 128K X 16 SYNCBURST SRAM l^ ic n o N 128K X 16 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST COUNTER FEATURES • • • • • • • • OPTIONS MARKING • Timing 12ns clock cycle 83 MHz 13ns clock cycle (75 MHz)


    OCR Scan     		PDF MT58LC128K16C6 100-pin

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 64K x 16/18 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT FEATURES PIN ASSIGNMENT Top View • • • • • • • • Fast access tim es: 4.5, 5, 6, 7, 8 and 9ns Fast O E # access tim e: 4.5, 5 and 6ns


    OCR Scan     		PDF MT58LC64K16/18D8 6LC44K

    CY7C178

    Abstract: CY7C179 AL4A
    Text: PRELIMINARY '# CYPRESS 32Kx 18 Synchronous Cache RAM Features • Direct interface with the processor and external cache controller • Supports 66-MHz Pentium micro­ processor cache systems with zero wait states • Asynchronous output enable • I/Os capable o f 3.3V operation


    OCR Scan     		PDF CY7C178 CY7C179 66-MHz CY7C178) CY7C179) 52-pin CY7C179 inter-12JC 52-Lead AL4A

    Untitled

    Abstract: No abstract text available
    Text: CY7C1031 CY7C1032 PRELIMINARY ?CYPRESS Functional Description continued Single Write Accesses Initiated by ADSP This access is initiated when the following conditions are satisfied at clock rise: (1) is LOW and (2) AD5P is LOW. ADSP-triggered write cycles are completed in two clock periods. The address at Ao


    OCR Scan     		PDF CY7C1031 CY7C1032 CY7C1031 CY7C1032 CY7C1032â 52-Lead

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 128K • • • • • • • • • PIN ASSIGNMENT Top View 100-Pin TQFP Fast access times: 4 .5 ,5 ,6 ,7 ,8 and 9ns Fast OE# access time: 4.5,5 and 6ns Single +3.3V +10%/-5% power supply SNOOZE MODE for reduced power standby Common data inputs and data outputs


    OCR Scan     		PDF 100-Pin 100-lead bus11T 160-PIN

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE SYNCHRONOUS SRAM 64K x 32/36 SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT FEATURES • • • • • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 4.5, 5, 5.5, 6 and 7ns


    OCR Scan     		PDF MT58LC64K32/36G1 LC64K32/36G1

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE MT58LC32K32/36E1 32K x 32/36 SYNCBURST SRAM |V | = R O N 32K x 32/36 SRAM O D A A il O t lM IV I +3-3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES PIN ASSIGNMENT (Top View Fast access times: 8.5,9, 10 and 11ns Fast OE# access time: 5ns


    OCR Scan     		PDF MT58LC32K32/36E1

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M T58LC128K16/18D8 128K X 16/18 SYNCBURST SRAM |U |IC = R O N 128Kx 16/18 SRAM +3.3V SUPPLY, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT FEATURES • • • • • • • • • • PIN ASSIGNMENT Top View 100-Pin TQFP Fast access tim es: 4.5, 5, 6, 7, 8 and 9ns


    OCR Scan     		PDF T58LC128K16/18D8 MT58LC126K16M808

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M T58LC256K16/18F1 256K X 16/18 SYNCBURST SRAM l ^ i c n o N SYNCHRONOUS SRAM 256K x 16/18 SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED AND SELECTABLE BURST COUNTER FEATURES • • • • • • • • • • • • • • • • • OPTIONS 100-Pin TQFP


    OCR Scan     		PDF T58LC256K16/18F1 MT58LC256K16M8F1

    az18

    Abstract: No abstract text available
    Text: ADVANCE 256K SYNCHRONOUS SRAM MT58LC256K16/18B3 16/18 SYNCBURST SRAM X 2 5 6 K X 1 6 /1 8 S R A M +3.3V SUPPLY, FLOW-THROUGH AND BURST COUNTER FEATURES • • • • • • • • • • • • • • • • Fast access times: 8.5, 9, 10 and 11ns Fast OE# access time: 5ns


    OCR Scan     		PDF MT58LC256K16/18B3 100-lead MT58LC256K16/1SB3 i11937 az18