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    ACY TRANSISTOR Search Results

    ACY TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ACY TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking ACY

    Abstract: transistor ACY PNP acy transistor marking ACY SOT-23
    Text: 2SA1313 SOT-23-3L Transistor PNP SOT-23-3L 1. BASE 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features — — — Excellent hFE Linearity : hFE(2) =25(Min)at VCE =-6V,IC=- 400mA. High Voltage :VCEO=-50V(Min) Complements the 2SC3325. 2.80 1.60 0.15 1.90 MARKING : ACO,ACY


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    PDF 2SA1313 OT-23-3L OT-23-3L 400mA. 2SC3325. -100mA -10mA -20mA -100A marking ACY transistor ACY PNP acy transistor marking ACY SOT-23

    MAX805

    Abstract: MAX690CPA MAX690 MAX704 MAX802 MAX804 MAX806 MAX690_EPA
    Text: 19-0243; Rev 1; 9/94 3.0V/3.3V Microprocessor Supervisory Circuits ow ind tW se Re ail r-F r we to Po ara mp ail Co r-F we acy Po ccur A ery ld att h ho res p-B itc u Sw Th ck t Ba se Re t al Inpu ut nu Ma t t se np Re se Re ✓ MAX704 MAX802 MAX804


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    PDF MAX690 MAX704 MAX802 MAX805 MAX804 MAX806 MAX805 MAX690CPA MAX690 MAX704 MAX802 MAX804 MAX806 MAX690_EPA

    Untitled

    Abstract: No abstract text available
    Text: High Frequency Switch Mode Li-Ion Battery Charger ADP3804 = Preliminary Technical Data FEATURES Li -Io n Bat t er y Ch ar g er Fi x ed 12,525 V, 12.600 V, o r A d j u st ab l e Bat t er y Vo l t ag e Hi g h En d -o f -Ch ar g e Vo l t ag e A ccu r acy ؎ 0.4% @ +25


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    PDF ADP3804 P3804. P3804

    MAX805

    Abstract: MAX690CPA MAX690 MAX704 MAX802 MAX804 MAX806
    Text: 19-0243; Rev 1; 9/94 3.0V/3.3V Microprocessor Supervisory Circuits ow ind tW se Re ail r-F r we to Po ara mp ail Co r-F we acy Po ccur A ery ld att h ho res p-B itc u Sw Th ck t Ba se Re t al Inpu ut nu Ma t t se np Re se Re ✓ MAX704 MAX802 MAX804


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    PDF MAX690 MAX704 MAX802 MAX805 MAX804 MAX806 MAX805 MAX690CPA MAX690 MAX704 MAX802 MAX804 MAX806

    marking ACY

    Abstract: marking ACY SOT-23 transistor ACY PNP 2SA1313 2SC3325 aco transistor acy transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SA1313 SOT-23-3L TRANSISTOR PNP FEATURES z Excellent hFE Linearity : hFE(2) =25(Min)at VCE =-6V,IC=- 400mA. z High Voltage :VCEO=-50V(Min) z Complements the 2SC3325.


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    PDF OT-23-3L 2SA1313 OT-23-3L 400mA. 2SC3325. -100A -100mA -400mA -100mA -10mA marking ACY marking ACY SOT-23 transistor ACY PNP 2SA1313 2SC3325 aco transistor acy transistor

    MAX6511

    Abstract: marking ACY MAX6511UT065-T MAX6512 MAX6513 MAX6613 Aaoi marking marking code acw dfn AAPK
    Text: 19-1819; Rev 2; 10/04 Low-Cost, Remote SOT Temperature Switches The MAX6511/MAX6512/MAX6513 are fully integrated, remote temperature switches that use an external P-N junction typically a diode-connected transistor as the sensing element to measure the remote temperature.


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    PDF MAX6511/MAX6512/MAX6513 MAX6511 MAX6513 MAX6512 T1433-1 T1433-2 marking ACY MAX6511UT065-T MAX6613 Aaoi marking marking code acw dfn AAPK

    marking code acw

    Abstract: marking ACY SOT23-6 MARKING ada MAX6511
    Text: 19-1819; Rev 2; 10/04 Low-Cost, Remote SOT Temperature Switches The MAX6511/MAX6512/MAX6513 are fully integrated, remote temperature switches that use an external P-N junction typically a diode-connected transistor as the sensing element to measure the remote temperature.


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    PDF MAX6511/MAX6512/MAX6513 MAX6511 MAX6513 MAX6512 T1433-2 marking code acw marking ACY SOT23-6 MARKING ada

    HY 1201

    Abstract: No abstract text available
    Text: MCP9509/10 Resistor-Programmable Temperature Switches Features Description • • • • Microchip Technology’s MCP9509/10 devices are programmable logic output temperature switches. The temperature switch threshold can be programmed with a single external resistor, which provides high design


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    PDF MCP9509/10 MCP9509/10 MCP9509 MCP9510 DS22114A-page HY 1201

    Newmarket Transistors

    Abstract: NKT Semiconductors Newmarket nkt NKT216 2N1305 NKT213 2N1309 germanium transistors NPN ACY21 OC72
    Text: N ew m arket Sem iconductors Germanium A lloy Transistors P N P Germanium A llo y Transistors REFERENCE T A B LE Maximum ratings. C haracteristics at T 4 = 25°C. Code ACY ACY ACY ACY ACY ACY ACY ACY 17 18 19 20 21 22 39 40 BVC eo BVcao BV ebo IcM V V V A


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    PDF 27714R 27716E 27717C 7718A 27719X 27710F 15627E 15628C 5629A 15631B Newmarket Transistors NKT Semiconductors Newmarket nkt NKT216 2N1305 NKT213 2N1309 germanium transistors NPN ACY21 OC72

    IAO5 Sharp

    Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
    Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The


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    PDF Q60103- thS10 to3530 to4600 to4600 IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071

    103MA

    Abstract: Q62901-B1 transistor ACY PNP Q60103-Y32-F ACY 23 V legiert
    Text: ACY 23 ACY 32 PIVIF’-Transistoren fü r NF-Vorstufen ACY 23 und ACY 32 sind legierte PNP-Germanium-Transistoren im Gehäuse 1 A 3 DIN 41 871 TO-1 ähnl. . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Der Kollektoranschluß wird mit einem roten Punkt am Gehäuserand gekennzeichnet. Die Transistoren sind besonders


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    PDF Q60I03-Y23-E Q60I03-Y23-F Q60130-Y32-E Q60103-Y32-F Q62901-B1 /ACY32 101mA 103MA Q62901-B1 transistor ACY PNP Q60103-Y32-F ACY 23 V legiert

    transistor ACY PNP

    Abstract: acy transistor AF200 transistor W1A germanium af transistors Germanium Transistor hfcf 5101B AMB2560 ACY23
    Text: ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The collector terminal is indicated by a red dot on the case rim. The transistors are designed


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    PDF Q60103- thS10 transistor ACY PNP acy transistor AF200 transistor W1A germanium af transistors Germanium Transistor hfcf 5101B AMB2560 ACY23

    transistor k520

    Abstract: IC K520 transistor ACY PNP acy transistor 1518 B TRANSISTOR ACY23 ACY23V ACY32 Q60103-Y23-E Q60103-Y23-F
    Text: 2SC D 023SbGS GGOMOMl H M S I E G • , _ PNP Transistors for AF Input Stages SIEMENS AKTIENGESELLSCHAF ACY 23 15C 04041 D f t C YA 2 ACY 23 and ACY 32 are alloyed germanium PNP transistors in 1 A 3 DIN 41871 case similar to TO-1 . All leads are electrically insulated from the case. The collector terminal


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    PDF ACY32 Q60103-Y23-E Q60103-Y23-F Q60103-Y32-E Q60103-Y32-F Q62901-B1 fl23SbOS QQQ404b ACY23 transistor k520 IC K520 transistor ACY PNP acy transistor 1518 B TRANSISTOR ACY23V ACY32 Q60103-Y23-E Q60103-Y23-F

    101F

    Abstract: ACY23 ACY23V ACY32 ACY32V Q60103-Y23-E Q60103-Y23-F Q60103-Y32-E Q60103-Y32-F Q62901-B1
    Text: 2SC D • 023SbOS 0004041 4 PNP Transistors for AF Input Stages SIEMENS AKTIENGESELLSCHAF ISIE6 1 5C 04041 D ACY23 ACY32 ACY 23 and ACY 32 are alloyed germanium PNP transistors in 1 A 3 DIN 41871 case similar to T0-1 . All leads are electrically insulated from the case. The collector terminal


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    PDF 00QMQ41 ACY23 ACY32 Q60103-Y23-E Q60103-Y23-F Q60103-Y32-E Q60103-Y32-F Q62901-B1 fl23SbQS 000404b 101F ACY23V ACY32V Q62901-B1

    Funkamateur

    Abstract: zeilentransformator thyristor BT Germanium drossel funktionsgenerator ScansUX974 Hallgenerator tonkopf BT thyristor
    Text: Fach­ abkürzungen Russisch 1 FUNKAMATEUR-lnformation Russische Abkürzungen auf dem G ebiet der Elektrotechnik/Elektronik und ihre deutsche Bedeutung A ABK ABM ABT AHM AHY AK AM AM AM AH AOM AI1B A nn A II^ M APr o APK APM APH APn APC A py Apy APJI Acy


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    GP500

    Abstract: ACY33 bnsu germanium af transistors Germanium Transistor transistor ACY PNP
    Text: ACY33 PIMP Transistor fo r A F-driver and pow er stages The ACY 33 is a germanium PNP alloyed transistor in a case 1 A 3 DIN 41871 similar TO —1 . All leads are electrically insulated from the case. The collector terminal is indicated by a red dot on the rim of the case.


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    PDF ACY33 ACY33 --Y33 Q60103 GP500 bnsu germanium af transistors Germanium Transistor transistor ACY PNP

    NKT275

    Abstract: OC75 OC81DN OC72 OC78 NKT213 germanium transistors PNP oc75 oc76 ACY35 nkt 275
    Text: PNP Germanium Transistors PNP Germanium A F Alloy Transistors in T 0 1 metal case Common Characteristics fr Vc£ Cob <VC B = 6 V , \E = 0 •6 V , lc = 1mA) 1 MHz Characteristics at T amb = 2 5 °C Maximum ratings Type Low Noise Types 40 pF B V C fO V B V CSO


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    nkt 110/12

    Abstract: ACY39 NKT221 germanium transistors PNP NKT 90 ACY20 ma902 ACY41 026 pnp
    Text: PNP Germanium Transistors PN P Germanium A F A llo y Transistors in T 0 5 metal case fr <vce~ 6V-'c 1 m A Com m on Characteristics Type A C Y 18 19 20 21 22 39 A C Y 40 A C Y 41 A C Y 44 NKT221 N K T 222 N K T 223 N K T 224 N K T 225 N K T 226* N K T 227


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    kt420

    Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
    Text: Introduction This summary contains abridged information on the range of NKT semiconductor products, and the five main product groups are listed below. a HYBRID MICROCIRCUITS b) SILICON TRANSISTORS c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS


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    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    transistor vergleichsliste

    Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
    Text: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N


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    Untitled

    Abstract: No abstract text available
    Text: HFA1113 S e m iconductor September 1998 850MHz, Low Distortion, Output Limiting, Programmable Gain, Buffer Amplifier The HFA1113 is a high speed Buffer featuring user programmable gain and output limiting coupled with ultra high speed performance. This buffer is the ideal choice for


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    PDF HFA1113 850MHz, HFA1113 1600nm

    Untitled

    Abstract: No abstract text available
    Text: HFA1113 Semiconductor Data Sheet February 1999 850MHz, Low Distortion, Output Limiting, Programmable Gain, Buffer Amplifier The HFA1113 is a high speed Buffer featuring user programmable gain and output limiting coupled with ultra high speed performance. This buffer is the ideal choice for


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    PDF HFA1113 850MHz, HFA1113 1-800-4-HARRIS