ACTV M3 Search Results

ACTV M3 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
SF-SFPP2EACTV-005		Amphenol Cables on Demand	Amphenol SF-SFPP2EACTV-005 5m Active SFP+ Cable - Amphenol 10GbE SFP+ Active Direct Attach Copper Cable (16.4 ft)	Datasheet

ACTV M3 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
concurrent rdram Abstract: RDRAM CONCURRENT es a 00112 concurrent rdram 72 mbit concurrent RDRAM 72 9 rambus concurrent rdram R64MC-50-600 SVP-32 rdram clock generator concurrent RDRAM 72 Text: Preliminary Information Concurrent RDRAM ® 16/18Mbit 2Mx8/9 & 64/72Mbit (8Mx8/9) RAMBUS Overview The 16/18/64/72-Mbit Concurrent Rambus DRAMs (RDRAM) are extremely high-speed CMOS DRAMs organized as 2M or 8M words by 8 or 9 bits. They are capable of bursting unlimited lengths of data at 1.67 ns	Original	16/18Mbit 64/72Mbit 16/18/64/72-Mbit 600MHz DL0029-07 concurrent rdram RDRAM CONCURRENT es a 00112 concurrent rdram 72 mbit concurrent RDRAM 72 9 rambus concurrent rdram R64MC-50-600 SVP-32 rdram clock generator concurrent RDRAM 72	PDF
53MC CONTROLLER Abstract: RDRAM SOP OKI D51 MD5764802-53MC MD5764802-60MC MSM5718C50-53GS-K MSM5718C50-60GS-K SHP32-P-1125-0 78D SOP Text: E2G1059-28-Y1 This version: Nov. 1998 MSM5718C50/MD5764802 Previous version: Jul. 1998 ¡ Semiconductor MSM5718C50/MD5764802 ¡ Semiconductor 18Mb 2M ¥ 9 & 64Mb (8M ¥ 8) Concurrent RDRAM DESCRIPTION The 18/64-Megabit Concurrent Rambus DRAMs (RDRAM ) are extremely high-speed	Original	E2G1059-28-Y1 MSM5718C50/MD5764802 18/64-Megabit SHP32-P-1125-0 53MC CONTROLLER RDRAM SOP OKI D51 MD5764802-53MC MD5764802-60MC MSM5718C50-53GS-K MSM5718C50-60GS-K 78D SOP	PDF
RDRAM SOP Abstract: OKI D51 concurrent rdram MD5764802-53MC MD5764802-60MC MSM5718C50-53GS-K MSM5718C50-60GS-K SHP32-P-1125-0 ACTV m3 OKI D51 a24 Text: E2G1059-39-21 This version: Feb. 1999 MSM5718C50/MD5764802 Previous version: Nov. 1998 ¡ Semiconductor MSM5718C50/MD5764802 ¡ Semiconductor 18Mb 2M ¥ 9 & 64Mb (8M ¥ 8) Concurrent RDRAM DESCRIPTION The 18/64-Megabit Concurrent Rambus DRAMs (RDRAM ) are extremely high-speed	Original	E2G1059-39-21 MSM5718C50/MD5764802 18/64-Megabit RDRAM SOP OKI D51 concurrent rdram MD5764802-53MC MD5764802-60MC MSM5718C50-53GS-K MSM5718C50-60GS-K SHP32-P-1125-0 ACTV m3 OKI D51 a24	PDF
m15m Abstract: MSM5718C50 MSM5718C50-53GS-K MSM5718C50-60GS-K Text: e Pr lim MSM5718C50 18-Megabit Concurrent RDRAM 2M ¥ 9 DESCRIPTION The 18-Megabit Concurrent Rambus DRAMs (RDRAM ) are extremely high-speed CMOS DRAMs organized as 2M words by 9 bits. They are capable of bursting unlimited lengths of data at 1.67 ns per byte (13.3 ns per eight bytes). The use of Rambus Signaling Level (RSL) technology permits	Original	MSM5718C50 18-Megabit SHP-32 m15m MSM5718C50 MSM5718C50-53GS-K MSM5718C50-60GS-K	PDF
MIL-STD-1553 schematic fpga Abstract: PM-DB2791 3C80 555 timer project holt ic 6110 3EC0 an555 6110RT_FPGA_2.ZIP Holt 1553 Controller - HI6110 1A80 Text: AN-555 HI-6110 RT FPGA Integration Application Note May 4, 2012 Introduction This application note demonstrates how to implement a MIL-STD-1553 remote terminal RT using an HI-6110 single message processor managed by a field-programmable gate array (FPGA). The provided	Original	AN-555 HI-6110 MIL-STD-1553 MIL-STD-1553 schematic fpga PM-DB2791 3C80 555 timer project holt ic 6110 3EC0 an555 6110RT_FPGA_2.ZIP Holt 1553 Controller - HI6110 1A80	PDF
concurrent RDRAM 72 9 Abstract: MD5764802 MSM5718C50 18MSHP concurrent RDRAM 72 Text: J2G1059-39-21 ¡ 電子デバイス作成：1999年 2月前回作成：1998年11月 MSM5718C50/MD5764802 l MSM5718C50/MD5764802 18Mb（2Mx9）& 64Mb（8M×8）Concurrent RDRAM n 概要 18/64メガビットコンカレントRambus‘ DRAM（RDRAM）は2Mまたは8Mワード×8または9ビット構	Original	J2G1059-39-21 MSM5718C50/MD5764802 MSM5718C50/MD5764802 18Mb2M 64Mb8M 18/64Rambus` 600MHz 600MB/s480MB/s RSL1332 242KB concurrent RDRAM 72 9 MD5764802 MSM5718C50 18MSHP concurrent RDRAM 72	PDF
OKI D51 a24 Abstract: OKI D51 MD5764802 MSM5718C50 MD5764802-53MC 141oC concurrent rdram concurrent RDRAM 72 9 13c64 concurrent rdram oki Text: お客様各位資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコンダクタ株式会社に承継されました。従いまして、本資料中には「沖電気工業株	Original	J2G1059-39-21 MSM5718C50/MD5764802 MSM5718C50/MD5764802 18Mb2M 64Mb8M 18/64Rambus` 600MHz 600MB/s480MB/s RSL1332 242KB OKI D51 a24 OKI D51 MD5764802 MSM5718C50 MD5764802-53MC 141oC concurrent rdram concurrent RDRAM 72 9 13c64 concurrent rdram oki	PDF
5460 bsz Abstract: 0C00 SH7206 A13A2 Text: APPLICATION NOTE SH7206 Group Example of BSC SDRAM Interface Setting 32-Bit Bus Introduction This document describes the synchronous DRAM (SDRAM) interface of the bus state controller (BSC) and provides a practical example of SDRAM connection. Target Device	Original	SH7206 32-Bit SH7206 REJ05B0657-0100 5460 bsz 0C00 A13A2	PDF
5460 bsz Abstract: 0C00 SH7206 Text: APPLICATION NOTE SH7206 Group Example of BSC SDRAM Interface Setting 16-Bit Bus Introduction This document describes the synchronous DRAM (SDRAM) interface of the bus state controller (BSC) and provides a practical example of SRAM connection. Target Device	Original	SH7206 16-Bit SH7206 REJ05B0656-0100 5460 bsz 0C00	PDF
0C00 Abstract: SH7670 0xa55a Text: APPLICATION NOTE SH7670 Group Example of BSC SDRAM Interface Connection 32-Bit Data Bus Introduction This application note introduces the synchronous DRAM (SDRAM) interface of the bus state controller (BSC) of SH7670/SH7671/SH7672/SH7673 products and includes a sample application.	Original	SH7670 32-Bit SH7670/SH7671/SH7672/SH7673 SH7670 REJ06B0782-0100/Rev 0C00 0xa55a	PDF
_INITSCT Abstract: MT48LC4M16A2 H8S/2377 E10A-USB Text: APPLICATION NOTE H8S Family SDRAM Control Introduction This sample task connects the SDRAM to the H8S microcomputer by using the SDRAM control function of the bus controller. Target Device H8S/2377R Contents 1. Overview . 2	Original	H8S/2377R REJ06B0500-0200/Rev _INITSCT MT48LC4M16A2 H8S/2377 E10A-USB	PDF
hfdw Abstract: No abstract text available Text: _ ü 16/18Mbit 2Mx8/9 & 64/72Mbit (8Mx8/9) ConcurrentRDRAM Overview VDD GND BUSDATA[8] GND BUSDATA[7] (NC) BUSENABLE VDD BUSDATA[6] GND BUSDATA[5] VDDA RXCLK GNDA TXCLK VDD BUSDATA[4] GND BUSCTRL SIN VREF SOUT BUSDATA[3] GND BUSDATA[2] (NC)	OCR Scan	16/18Mbit 64/72Mbit 16/18/64/72-M 600MHz hfdw	PDF
KM49RC2H-A60 Abstract: RDRAM CONCURRENT KM49RC2H samsung datecode samsung concurrent rdram RC2H-A66 concurrent RDRAM 72 9 concurrent rdram Text: KM48RC2H/KM49RC2H Concurrent RDRAM 2M X 8 / 2 M x 9 Concurrent RDRAM Overview Ordering Information The 16 / 18Mbit Concurrent Rambus DRAMs RDRAM are Part No. Org. frequency KM49RC2H-A60 2M X 9 600Mhz extremely high-speed CMOS DRAMs organized as 2M words	OCR Scan	KM48RC2H/KM49RC2H 18Mbit 667MHz SHP-32 KM49RC2H-A60 RDRAM CONCURRENT KM49RC2H samsung datecode samsung concurrent rdram RC2H-A66 concurrent RDRAM 72 9 concurrent rdram	PDF
HY5RC1809 Abstract: concurrent rdram L3C analog hyundai concurrent rdram hyundai rdram concurrent RDRAM 72 HY5RC1809-66 concurrent rdram hyundai concurrent rdram 72 mbit HY5RC1809-53 Text: HY5RC1809 / 6408 Series “HYUNDAI 18Mb 2Mx9 / 64Mb(8Mx8), Concurrent RDRAM Preliminary Overview The 18/64M b C o n cu rre n t R am bus DRAMs (RDRAM) are extremely high-speed CMOS DRAMs organized as 2M words by 9 bits or 8M words by 8 bits. They are capable of bursting unlimited length of	OCR Scan	18/64M SVP-32 HY5RC1809 concurrent rdram L3C analog hyundai concurrent rdram hyundai rdram concurrent RDRAM 72 HY5RC1809-66 concurrent rdram hyundai concurrent rdram 72 mbit HY5RC1809-53	PDF

TMS626802 Abstract: SDRAM 1994 Texas Instruments Text: i m gv^uuvci 1 048576-WORD BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS182B - FEBRUARY 1994 - REVISED JUNE 1995 Organization . . . 1M x 8 x 2 Banks 3.3-V Power Supply ±10% Tolerance Two Banks for On-Chip Interleaving (Gapless Accesses)	OCR Scan	1048576-WORD SMOS182B 100-MHz SMOS182B- R-PDSO-G44) TMS626802 SDRAM 1994 Texas Instruments	PDF
texas instruments 77261 Abstract: TEXAS 77261 N03J Text: TMS626802 1048576-WORD BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS182A - FEBRUARY 1994 - REVISED JUNE 1995 Organization . . . 1M x 8 x 2 Banks 3.3-V Power Supply ±10% Tolerance Two Banks for On-Chip Interleaving (Gapless Accesses) High Bandwidth - Up to 100-MHz Data	OCR Scan	TMS626802 1048576-WORD SMOS182A 100-MHz texas instruments 77261 TEXAS 77261 N03J	PDF
TMS6264 Abstract: TMS626402 CLOCK30 AND-02 Text: 2097152-WORD BY 4-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS642B - FEBRUARY 1994 - REVISED JUNE 1995 DGEPACKAGE TOP VIEW • Organization . . . 2M x 4 x 2 Banks • 3.3-V Power Supply (±10% Tolerance) • Two Banks for On-Chip Interleaving	OCR Scan	2097152-WORD SMOS642B 100-MHz TMS626402 R-PDSO-G44) TMS626402 TMS6264 CLOCK30 AND-02	PDF
TMS626802 Abstract: SDRAM 1994 Texas Instruments 211-ER 62680 Text: TMS626802 1048576-WORD BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS1826 - FEBRUARY 1994 - REVISED JUNE 1995 Organization . . . 1M x 8 x 2 Banks 3.3-V Power Supply ±10% Tolerance Two Banks for On-Chip Interleaving (Gapless Accesses) High Bandwidth - Up to 100-MHz Data	OCR Scan	TMS626802 1048576-WORD SMOS1826 100-MHz SMOS182B- R-PDSO-G44) TMS626802 SDRAM 1994 Texas Instruments 211-ER 62680	PDF
SMOS182 Abstract: No abstract text available Text: TMS626802, TMS636802 1048576-WORD BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS182 - FEBRUARY 1994 TM S626802 LVTTL DGE PACKAGE (TO P VIE W ) 3.3-V Power Supply (10% Tolerance) Two Banks for On-Chip Interleaving (Gapless Accesses) vcc [ 1	OCR Scan	TMS626802, TMS636802 1048576-WORD SMOS182 100-MHz S626802	PDF
Untitled Abstract: No abstract text available Text: HM5216805-A60, HM5216405-A60 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-796 Z Preliminary, Rev. 0.0 Jun. 26, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5216805 Series,	OCR Scan	HM5216805-A60, HM5216405-A60 576-word 152-word ADE-203-796 HM5216805 HM5216405	PDF
Untitled Abstract: No abstract text available Text: HM5216165 Series 524,288-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-280B Z Rev. 2.0 Jun. 20, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5216165 is offered in 2 banks for improved performance.	OCR Scan	HM5216165 288-word 16-bit ADE-203-280B Hz/83 HM5216165-1 HM5216165-10/15	PDF
31ZA8 Abstract: No abstract text available Text: HM5216165 Series 524,288-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-280A Z Rev. 1.0 Dec. 20, 1996 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5216165 is offered in 2 banks for improved performance.	OCR Scan	HM5216165 288-word 16-bit ADE-203-280A Hz/83 Hz/66 HM5216165-10H HM5216165-10H) 31ZA8	PDF
Untitled Abstract: No abstract text available Text: HB526C164EN Series 524,288-word x 64-bit x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-628 Z Preliminary Rev. 0.0 . 18, 1996 Description The HB526C164EN belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been	OCR Scan	HB526C164EN 288-word 64-bit ADE-203-628 16-Mbit HM5216165TT) 24C02)	PDF
Untitled Abstract: No abstract text available Text: HM5264165 Series HM5264805 Series HM5264405 Series 1,048,576-word X 16-bit x 4-bank Synchronous Dynamic RAM 2,097,152-word X 8-bit x 4-bank Synchronous Dynamic RAM 4,194,304-word X 4-bit X 4-bank Synchronous Dynamic RAM HITACHI ADE-203-497 Z Preliminary Rev. 0.3	OCR Scan	HM5264165 HM5264805 HM5264405 576-word 16-bit 152-word 304-word ADE-203-497 HM5264165, HM5264805,	PDF

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ACTV M3 Search Results

ACTV M3 Result Highlights (1)

ACTV M3 Datasheets Context Search

concurrent rdram

53MC CONTROLLER

RDRAM SOP

m15m

MIL-STD-1553 schematic fpga

concurrent RDRAM 72 9

OKI D51 a24

5460 bsz

5460 bsz

0C00

_INITSCT

hfdw

KM49RC2H-A60

HY5RC1809

TMS626802

texas instruments 77261

TMS6264

TMS626802

SMOS182

Untitled

Untitled

31ZA8

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Untitled