Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    ACTRON INTERNATIONAL Search Results

    ACTRON INTERNATIONAL Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    DC1767A Analog Devices LTC2997 Demo Board - Internal/ Visit Analog Devices Buy
    LTC1470CS8#PBF Analog Devices 1x & 2x PCMCIA Protected 3.3V/ Visit Analog Devices Buy
    LTC1314CS#PBF Analog Devices PCMCIA Sw Matrixw/ Built-In N- Visit Analog Devices Buy
    LTC1470CS8#TRPBF Analog Devices 1x & 2x PCMCIA Protected 3.3V/ Visit Analog Devices Buy
    LTC1472CS#TRPBF Analog Devices Protected PCMCIA VCC & VPP Sw Visit Analog Devices Buy
    LTC1471CS#TRPBF Analog Devices 1x & 2x PCMCIA Protected 3.3V/ Visit Analog Devices Buy

    ACTRON INTERNATIONAL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Design Considerations for the SST FlashFlex51 Family Microcontroller

    Abstract: Actron endrich Oasis actron international 6812 microcontroller NORTH AMERICA SALES AND DISTRIBUTION Northern Design Electronics Thorson Pacific 522-1150
    Text: Design Considerations for the SST FlashFlex51 Family Microcontroller Application Note August 1999 1.0 INTRODUCTION • The following design considerations outline applications of generally accepted PCB design practices to prevent data corruption issues that could be encountered when


    Original     		PDF FlashFlex51 SST89F54/58 Design Considerations for the SST FlashFlex51 Family Microcontroller Actron endrich Oasis actron international 6812 microcontroller NORTH AMERICA SALES AND DISTRIBUTION Northern Design Electronics Thorson Pacific 522-1150

    transistor Bc 949

    Abstract: Oasis Nexus S SA 613 Nexus S camera
    Text: Features and Performances of Reprogrammable Nonvolatile Byte-wide Floating Gate Memories Technical Paper Revised March 1999 1.0 INTRODUCTION Over the past 20 to 25 years, various floating gate devices have been increasingly used for reprogrammable nonvolatile memory NVM applications.


    Original     		PDF

    32107

    Abstract: SST27SF256 oasis TTL 7452 A115 32-PIN A103 A114 Tekelec TA 27721
    Text: 256 Kilobit 32K x 8 SuperFlash MTP SST27SF256 Preliminary Specifications FEATURES: • 5.0V Read Operation (4.5V to 5.5V) • Superior Reliability – Endurance: At least 1000 Cycles – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical)


    Original     		PDF SST27SF256 SST27SF256 32107 oasis TTL 7452 A115 32-PIN A103 A114 Tekelec TA 27721

    oasis

    Abstract: 32-PIN A103 A114 A115 SST27SF020 90-3C-PH 2t926
    Text: 2 Megabit 256K x 8 SuperFlash MTP SST27SF020 Preliminary Specifications FEATURES: • 5.0V Read Operation (4.5V to 5.5V) • Superior Reliability – Endurance: At least 1000 Cycles – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical)


    Original     		PDF SST27SF020 SST27SF020 oasis 32-PIN A103 A114 A115 90-3C-PH 2t926

    SST39VF200-70-4C-EK

    Abstract: oasis SST39VF200 XX98 ST39VF200-90-4C-U1 SST39VF200-90-4C-EK SST39VF200-90-4I-EK
    Text: 2 Megabit 128K x 16-Bit Multi-Purpose Flash SST39VF200 Advance Information FEATURES: • Organized as 128K x16 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention


    Original     		PDF 16-Bit) SST39VF200 SST39VF200-70-4C-EK oasis SST39VF200 XX98 ST39VF200-90-4C-U1 SST39VF200-90-4C-EK SST39VF200-90-4I-EK

    TA 7644 BF

    Abstract: cmos power TCP 8108 NEXUS FLASH ERASE oasis TCP 8108 32-PIN F01A SST31LH041 830049
    Text: 4 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH041 Advance Information FEATURES: • Organized as 512K x 8 Flash + 128K x 8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector Erase and Byte Program:


    Original     		PDF SST31LH041 D16116 TA 7644 BF cmos power TCP 8108 NEXUS FLASH ERASE oasis TCP 8108 32-PIN F01A SST31LH041 830049

    cmos power TCP 8108

    Abstract: oasis TCP 8108 SST39VF400 jedec mo-142 dd
    Text: 4 Megabit 256K x 16-Bit Multi-Purpose Flash SST39VF400 Advance Information FEATURES: • Organized as 256 K X 16 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention


    Original     		PDF 16-Bit) SST39VF400 cmos power TCP 8108 oasis TCP 8108 SST39VF400 jedec mo-142 dd

    TA 7644 BF

    Abstract: oasis 32-PIN
    Text: 512 Kilobit 64K x 8 Page Mode EEPROM SST29EE512A / SST29LE512A / SST29VE512A Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for SST29EE512A – 3.0-3.6V for SST29LE512A – 2.7-3.6V for SST29VE512A • Superior Reliability


    Original     		PDF SST29EE512A SST29LE512A SST29VE512A SST29EE512A SST29LE512A SST29EE512A/29LE512A/29VE512A TA 7644 BF oasis 32-PIN

    oasis

    Abstract: No abstract text available
    Text: 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit High Speed Multi-Purpose Flash SST39LH512 / SST39LH010 / SST39LH020 / SST39LH040 Advance Information FEATURES: • Organized as 64K x8/ 128K x8/ 256K x8/ 512K x8 • Single 3.0-3.6V Read and Write Operations • Superior Reliability


    Original     		PDF SST39LH512 SST39LH010 SST39LH020 SST39LH040 SST39LH010 oasis

    29VE010A

    Abstract: SW2-303 metatech 300 microtek ups circuit diagram oasis TA 7644 BF SST29EE010A SST29LE010A SST29VE010A
    Text: 1 Megabit 128K x 8 Page Mode EEPROM SST29EE010A / SST29LE010A / SST29VE010A Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the SST29EE010A – 3.0-3.6V for the SST29LE010A – 2.7-3.6V for the SST29VE010A • Superior Reliability


    Original     		PDF SST29EE010A SST29LE010A SST29VE010A SST29EE010A SST29LE010A SST29EE010A/29LE010A/29VE010A 29VE010A SW2-303 metatech 300 microtek ups circuit diagram oasis TA 7644 BF SST29VE010A

    27721

    Abstract: Actron diagram ta 306 oasis 29ee020
    Text: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020A / SST29LE020A / SST29VE020A Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the SST29EE020A – 3.0-3.6V for the SST29LE020A – 2.7-3.6V for the SST29VE020A • Superior Reliability


    Original     		PDF SST29EE020A SST29LE020A SST29VE020A SST29EE020A SST29LE020A SST29EE020A/29LE020A/29VE020A 27721 Actron diagram ta 306 oasis 29ee020

    oasis

    Abstract: 32-PIN F01A SST31LH041 Actron
    Text: 4 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH041 Advance Information FEATURES: • Organized as 512K x 8 Flash + 128K x 8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector Erase and Byte Program:


    Original     		PDF SST31LH041 D16116 oasis 32-PIN F01A SST31LH041 Actron

    Bf 353

    Abstract: NEXUS FLASH ERASE oasis 32-PIN F01A SST31LH021
    Text: 2 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH021 Advance Information FEATURES: • Organized as 256K x 8 flash + 128K x 8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector Erase and Byte Program:


    Original     		PDF SST31LH021 D16116 Bf 353 NEXUS FLASH ERASE oasis 32-PIN F01A SST31LH021

    NEXUS FLASH ERASE

    Abstract: endrich oasis LH1605 A190 Carlo Gavazzi A1668
    Text: 16 Megabit 1M x 16-Bit High Speed Multi-Purpose Flash SST39LH160Q / SST39LH160 Advance Information FEATURES: • Organized as 1 M X 16 • Latched Address and Data • Single 3.0-3.6V Read and Write Operations • Fast Sector Erase and Word Program: - Sector Erase Time: 18 ms (typical)


    Original     		PDF 16-Bit) SST39LH160Q SST39LH160 SST39LH160Q NEXUS FLASH ERASE endrich oasis LH1605 A190 Carlo Gavazzi A1668

    oasis

    Abstract: 29VE020 SST29EE020 SST29LE020 SST29VE020 ms-1307
    Text: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020 / SST29LE020 / SST29VE020 Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the SST29EE020 – 3.0-3.6V for the SST29LE020 – 2.7-3.6V for the SST29VE020 • Superior Reliability


    Original     		PDF SST29EE020 SST29LE020 SST29VE020 SST29EE020 SST29LE020 SST29EE020/29LE020/29VE020 oasis 29VE020 SST29VE020 ms-1307

    NEXUS FLASH ERASE

    Abstract: 353 flash oasis 32-PIN F01A SST31LH021 31LH021
    Text: 2 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH021 Advance Information FEATURES: • Organized as 256K x8 flash + 128K x8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector-Erase and Byte-Program:


    Original     		PDF SST31LH021 ye498404 NEXUS FLASH ERASE 353 flash oasis 32-PIN F01A SST31LH021 31LH021

    tekelec TA 355

    Abstract: NEXUS FLASH ERASE oasis SST31LH103
    Text: 1 Megabit Flash + 256 Kilobit SRAM ComboMemory SST31LH103 Advance Information FEATURES: • Organized as 64K x16 Flash + 16K x16 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations 2.7-3.6V without concurrent operation


    Original     		PDF SST31LH103 Cyc316116 tekelec TA 355 NEXUS FLASH ERASE oasis SST31LH103

    chn 348

    Abstract: CHN 314 chn 317 CHN 852 chn 440
    Text: 2 Megabit 256K x 8 SuperFlash MTP SST37VF020 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention


    OCR Scan     		PDF SST37VF020 32-Pin SST37VF020 chn 348 CHN 314 chn 317 CHN 852 chn 440

    CHN 345 X

    Abstract: No abstract text available
    Text: 4 Megabit 512K x 8 SuperFlash MTP SST37VF040 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention


    OCR Scan     		PDF SST37VF040 32-Pin SST37VF040 CHN 345 X

    CHN 512

    Abstract: CHN 314 1/CHN 852
    Text: 21Ü 512 Kilobit 64K x 8 Multi-Purpose Flash SST39SF512 Data Sheet FEATURES: • • • Organized as 64K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)


    OCR Scan     		PDF SST39SF512 CHN 512 CHN 314 1/CHN 852

    TEKELEC te 306

    Abstract: 30601
    Text: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020A / SST29LE020A / SST29VE020A Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • Fast Read Access Time: 120 and 150 ns - 5.0V-only for the SST29EE020A 3.0-3.6V for the SST29LE020A 2.7-3.6V for the SST29VE020A


    OCR Scan     		PDF SST29EE020A SST29LE020A SST29VE020A Reliability526-1102 TEKELEC te 306 30601

    27721

    Abstract: No abstract text available
    Text: iiili 16 Megabit 2M x 8-Bit Multi-Purpose Flash _ SST39VF016Q_ Advance Information FEATURES: • Organized as 2 M X 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:


    OCR Scan     		PDF SST39VF016Q_ SST39VF016Q Multi58-4276 27721

    Untitled

    Abstract: No abstract text available
    Text: 512 Kilobit 64K x 8 Page Mode EEPROM SST29EE512A / SST29LE512A / SST29VE512A Data Sheet FEATURES: • Single Voltage Read and Write Operations - 5.0V-only for SST29EE512A - 3.0-3.6V for SST29LE512A - 2.7-3.6V for SST29VE512A • Superior Reliability - Endurance: 100,000 Cycles (typical)


    OCR Scan     		PDF SST29EE512A SST29LE512A SST29VE512A SST29EE512A SST29LE512A SST29EE512A/29LE512A/29VE512A

    actron ab

    Abstract: 11a18 CHN 949 VF800
    Text: 21Ü 8 Megabit 512K x 16-Bit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information FEATURES: • Organized as 512 K X 16 • Single 2.7-3.6V Read and Write Operations • V • • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention


    OCR Scan     		PDF 16-Bit) SST39VF800Q SST39VF800 SST39VF800Q actron ab 11a18 CHN 949 VF800