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    ITT Interconnect Solutions CA3106F20-11P-B-F80

    Circular MIL Spec Connector
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    830049 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    32107

    Abstract: SST27SF256 oasis TTL 7452 A115 32-PIN A103 A114 Tekelec TA 27721
    Text: 256 Kilobit 32K x 8 SuperFlash MTP SST27SF256 Preliminary Specifications FEATURES: • 5.0V Read Operation (4.5V to 5.5V) • Superior Reliability – Endurance: At least 1000 Cycles – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical)


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    PDF SST27SF256 SST27SF256 32107 oasis TTL 7452 A115 32-PIN A103 A114 Tekelec TA 27721

    TA 7644 BF

    Abstract: cmos power TCP 8108 NEXUS FLASH ERASE oasis TCP 8108 32-PIN F01A SST31LH041 830049
    Text: 4 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH041 Advance Information FEATURES: • Organized as 512K x 8 Flash + 128K x 8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector Erase and Byte Program:


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    PDF SST31LH041 D16116 TA 7644 BF cmos power TCP 8108 NEXUS FLASH ERASE oasis TCP 8108 32-PIN F01A SST31LH041 830049

    Untitled

    Abstract: No abstract text available
    Text: North American Sales Offices C A N A DA Ciber Electronica, S.A. de C.V. Arquitectos No. 102 64700 Monterrey, Nuevo Leon MEXICO Phone/Fax: 528 359-8933 ALBERTA r.n. Longman Sales, Inc. 6815 - 8th St. NE, Suite 178 Calgary, Alberta T2E 7H7 Phone: (403) 295-6324


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: North American Sales Offices CANADA MEXICO ALBERTA Ciber Electronica, S.A. de C.V. Av. Lopez Mateos Sur 1480, Suite 301 Col. Campo de Polo Chapalita Guadalajara, Jalisco Mexico CP 45040 Phone: 52 3-647-5217/647-1998 Fax: (52) 3-121-3331 E-Mail: cservice@ciber.com.mx


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    PDF 2635-37th

    SST39VF200-70-4C-EK

    Abstract: oasis SST39VF200 XX98 ST39VF200-90-4C-U1 SST39VF200-90-4C-EK SST39VF200-90-4I-EK
    Text: 2 Megabit 128K x 16-Bit Multi-Purpose Flash SST39VF200 Advance Information FEATURES: • Organized as 128K x16 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention


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    PDF 16-Bit) SST39VF200 SST39VF200-70-4C-EK oasis SST39VF200 XX98 ST39VF200-90-4C-U1 SST39VF200-90-4C-EK SST39VF200-90-4I-EK

    Design Considerations for the SST FlashFlex51 Family Microcontroller

    Abstract: Actron endrich Oasis actron international 6812 microcontroller NORTH AMERICA SALES AND DISTRIBUTION Northern Design Electronics Thorson Pacific 522-1150
    Text: Design Considerations for the SST FlashFlex51 Family Microcontroller Application Note August 1999 1.0 INTRODUCTION • The following design considerations outline applications of generally accepted PCB design practices to prevent data corruption issues that could be encountered when


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    PDF FlashFlex51 SST89F54/58 Design Considerations for the SST FlashFlex51 Family Microcontroller Actron endrich Oasis actron international 6812 microcontroller NORTH AMERICA SALES AND DISTRIBUTION Northern Design Electronics Thorson Pacific 522-1150

    Untitled

    Abstract: No abstract text available
    Text: iiili 8 Megabit 1M x 8-Bit Multi-Purpose Flash _ SST39VF080Q_ Advance Information FEATURES: • Organized as 1M x 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:


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    PDF SST39VF080Q_ SST39VF080Q

    Untitled

    Abstract: No abstract text available
    Text: 21Ü 16 Megabit FlashBank Memory SST38UF166 Advance Information FEATURES: • • • Single 2.2-2.8V Read and Write Operations Read Access Time Separate Memory Banks for Code or Data - - Latched Address and Data Superior Reliability End of Write Detection


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    PDF SST38UF166

    Untitled

    Abstract: No abstract text available
    Text: 8 Megabit Flash + 2 Megabit SRAM ComboMemory SST32LH802 Advance Inform ation FEATURES: • Organized as 512 K x16 Flash + 128Kx16 SRAM or 512K x8 x2 Flash + 128K x8 x2 SRAM • Single 3.0-3.6V Read and Write Operations • Concurrent Operation - Read from or write to SRAM while erase/


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    PDF SST32LH802 128Kx16 SST32LH802

    Untitled

    Abstract: No abstract text available
    Text: 512 Kilobit 64K x 8 SuperFlash MTP SST37VF512 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention


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    PDF SST37VF512 32-Pin SST37VF512 pro-657-0204

    Untitled

    Abstract: No abstract text available
    Text: NEC fjPD42601 1,048,576 x 1-BIT SILICON FILE NEC Electronics Inc. PRELIMINARY INFORMATION Description Pin Configurations The ¿/PD42601 silicon file is an economical mass storage device specifically designed to replace mag­ netic disk drives in silicon disk, solid-state recording,


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    PDF fjPD42601 /PD42601 //PD42601 CEL-001069

    1/CHN 326

    Abstract: No abstract text available
    Text: 21Ü 2 Megabit 256K x 8 Multi-Purpose Flash SST39SF020 Data Sheet FEATURES: • • • Organized as 256 K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)


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    PDF SST39SF020 1/CHN 326

    27721

    Abstract: No abstract text available
    Text: iiili 16 Megabit 2M x 8-Bit Multi-Purpose Flash _ SST39VF016Q_ Advance Information FEATURES: • Organized as 2 M X 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:


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    PDF SST39VF016Q_ SST39VF016Q Multi58-4276 27721

    oasis

    Abstract: SST39VF400 SST39VF400 read code
    Text: 4 Megabit 256K x 16-Bit Multi-Purpose Flash f SST39VF400 r Advance Information FEATURES: • Organized as 256 K X 16 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - • • 2 KWord sectors Uniform 32 KWord blocks Fast Read Access Time:


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    PDF 16-Bit) SST39VF400 oasis SST39VF400 SST39VF400 read code

    actron ab

    Abstract: 11a18 CHN 949 VF800
    Text: 21Ü 8 Megabit 512K x 16-Bit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information FEATURES: • Organized as 512 K X 16 • Single 2.7-3.6V Read and Write Operations • V • • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention


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    PDF 16-Bit) SST39VF800Q SST39VF800 SST39VF800Q actron ab 11a18 CHN 949 VF800

    CHN 602

    Abstract: CHN 847
    Text: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020 / SST29LE020 / SST29VE020 Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • Fast Read Access Time: 120 and 150 ns - 5.0V-only for the SST29EE020 3.0-3.6V for the SST29LE020 2.7-3.6V for the SST29VE020


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    PDF SST29EE020 SST29LE020 SST29VE020 CHN 602 CHN 847

    CHN 847

    Abstract: chn 734
    Text: 1 Megabit 128K x 8 Page Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • • - • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention Low Power Consumption


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    PDF SST29EE010 SST29LE010 SST29VE010 and-1102 CHN 847 chn 734

    Hyde Park Electronics

    Abstract: 4001 PA PIONEER
    Text: /AN Ü ^ Sales Offices, Distributors & Representatives September 1991 Altera U.S. Sales Offices N O R TH ER N C A LIFORNIA C O R PO R A TE H EAD Q U A R TER S Altera Corporation 2610 Orchard Parkway San Jose, C A 95134-2020 TEL: (408) 984-2800 FAX: (408) 248-7097


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    Untitled

    Abstract: No abstract text available
    Text: 512 Kilobit 64K x 8 Page Mode EEPROM SST29EE512A / SST29LE512A / SST29VE512A Data Sheet FEATURES: • Single Voltage Read and Write Operations - 5.0V-only for SST29EE512A - 3.0-3.6V for SST29LE512A - 2.7-3.6V for SST29VE512A • Superior Reliability - Endurance: 100,000 Cycles (typical)


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    PDF SST29EE512A SST29LE512A SST29VE512A SST29EE512A SST29LE512A SST29EE512A/29LE512A/29VE512A

    CHN 512

    Abstract: CHN 314 1/CHN 852
    Text: 21Ü 512 Kilobit 64K x 8 Multi-Purpose Flash SST39SF512 Data Sheet FEATURES: • • • Organized as 64K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)


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    PDF SST39SF512 CHN 512 CHN 314 1/CHN 852

    chn 347

    Abstract: No abstract text available
    Text: 1 Megabit 128K x 8 SuperFlash MTP SST37VF010 Preliminary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention


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    PDF SST37VF010 32-Pin SST37VF010 chn 347

    Untitled

    Abstract: No abstract text available
    Text: 512 Kbit /1 Mbit / 2 Mbit / 4 Mbit High Speed Multi-Purpose Flash SST39LH512 / SST39LH010 / SST39LH020 / SST39LH040 Advance Information FEATURES: • • • Organized as 64K x8/ 128K x8/ 256K x8/ 512K x8 Superior Reliability Uniform 4 KByte sectors Fast Read Access Time:


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    PDF SST39LH512 SST39LH010 SST39LH020 SST39LH040 SST39LH010

    D27C1001a

    Abstract: PD27C1001A 27C1001A
    Text: SEC //PD27C1001A 131,072 X 8-BIT CMOS UV EPROM NEC Electronics Inc. Description Pin Configuration T h e ¿/PD27C1001A is a 1,048,576-bit ultraviolet eras­ able and e lectrically program m able read-only memory fabricated with double-polysilicon C M O S technology


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    PDF uPD27C1001A 576-bit The//F5D27C1001A 32-pin //PD27C1001A 32-Pln PD27C1001A //PD27C1001A 27C1001A D27C1001a PD27C1001A 27C1001A

    Ff-352

    Abstract: Ff352 HE 301 chn 511 CHN 549 chn 440
    Text: 16 Megabit 1M x 16-Bit High Speed Multi-Purpose Flash SST39LH160Q / SST39LH160 Advance Information FEATURES: • Organized as 1 M X 16 • Latched Address and Data • Single 3.0-3.6V Read and Write Operations • Fast Sector Erase and Word Program: •


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    PDF 16-Bit) SST39LH160Q SST39LH160 SST39LH160Q Ff-352 Ff352 HE 301 chn 511 CHN 549 chn 440