LPC2148 i2c
Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
Text: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.
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OT363
SC-88)
LPC2148 i2c
BGB210S
lpc2148 interfacing 2.8" TFT LCD DISPLAY
BGB210
embedded c code to interface lpc2148 with sensor
BGW200
TDA8932T
tda8920bj
NXP PN531
TDA8947J equivalent
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transistor 1892
Abstract: ACPR400 ACPR600 BLC6G20-75 BLC6G20LS-75
Text: BLC6G20-75; BLC6G20LS-75 UHF power LDMOS transistor Rev. 01 — 30 January 2006 Objective data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance
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BLC6G20-75;
BLC6G20LS-75
ACPR400
ACPR600
BLC6G20-75
6G20LS-75
transistor 1892
BLC6G20LS-75
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BLF7G20L-90P
Abstract: 1800 ldmos BLF7G20LS-90P RF35 PLW70
Text: BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 01 — 28 April 2010 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance
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BLF7G20L-90P;
BLF7G20LS-90P
ACPR400k
ACPR600k
BLF7G20L-90P
7G20LS-90P
1800 ldmos
BLF7G20LS-90P
RF35
PLW70
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BLF7G20LS-140P
Abstract: 850 SMD Rework Station RF35
Text: BLF7G20LS-140P Power LDMOS transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance
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BLF7G20LS-140P
ACPR400k
ACPR600k
BLF7G20LS-140P
850 SMD Rework Station
RF35
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16PIN
Abstract: ACPR600 CXG1030N pin diagram 1K variable resistor C41P
Text: CXG1030N Power Amplifier for PHS For the availability of this product, please contact the sales office. Description The CXG1030N is a power amplifier for PHS. This IC is designed using the Sony’s GaAs J-FET process and operates at a single power supply.
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CXG1030N
CXG1030N
16-pin
600kHz
16PIN
SSOP-16P-L01
SSOP016-P-0044
ACPR600
pin diagram 1K variable resistor
C41P
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Untitled
Abstract: No abstract text available
Text: CXG1051AFN Power Amplifier/Antenna Switch + Low Noise Down Conversion Mixer for PHS Description The CXG1051AFN is an MMIC consisting of the power amplifier, antenna switch and low noise down conversion mixer. This IC is designed using the Sony's GaAs J-FET
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CXG1051AFN
CXG1051AFN
26-pin
150mA
26PIN
HSOF-26P-01
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Untitled
Abstract: No abstract text available
Text: CXG1053FN Power Amplifier/Antenna Switch + Low Noise Amplifier/Down Conversion Mixer for PHS For the availability of this product, please contact the sales office. Description The CXG1053FN is an MMIC consisting of the power amplifier, antenna switch, low noise amplifier
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CXG1053FN
CXG1053FN
26-pin
150mA
26PIN
HSOF-26P-01
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ph98
Abstract: 597 smd transistor smd code HF transistor 2222-581 ACPR300 ACPR600 ACPR900 BLF3G21-30 PH98072 ph-98
Text: BLF3G21-30 UHF power LDMOS transistor Rev. 01 — 14 February 2007 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz. Table 1. Typical class-AB RF performance
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BLF3G21-30
ACPR600
1920ions
BLF3G21-30
ph98
597 smd transistor
smd code HF transistor
2222-581
ACPR300
ACPR600
ACPR900
PH98072
ph-98
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CXG1096FN
Abstract: 35dBm EIAJ 26-Pin
Text: CXG1096FN Power Amplifier/Antenna Switch + Low Noise Down Conversion Mixer for PHS Description The CXG1096FN is an MMIC consisting of the power amplifier, diversity antenna supported switch and low noise down conversion mixer. This IC is designed using the Sony's GaAs J-FET
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CXG1096FN
CXG1096FN
26-pin
150mA
100pF
100nF
26PIN
HSOF-26P-01
35dBm
EIAJ 26-Pin
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philips Electrolytic Capacitor
Abstract: blf4g20-110b ACPR400 ACPR600 BLF4G20S-110B RF35 Philips Electrolytic
Text: BLF4G20-110B; BLF4G20S-110B UHF power LDMOS transistor Rev. 01 — 23 January 2006 Product data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance
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BLF4G20-110B;
BLF4G20S-110B
ACPR400
ACPR600
ACPR400
ACPR600
philips Electrolytic Capacitor
blf4g20-110b
BLF4G20S-110B
RF35
Philips Electrolytic
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SmD TRANSISTOR a75
Abstract: No abstract text available
Text: BLF7G20LS-140P Power LDMOS transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance
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BLF7G20LS-140P
ACPR400k
ACPR600k
SmD TRANSISTOR a75
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CXG1051AFN
Abstract: 12IFR
Text: CXG1051AFN Power Amplifier/Antenna Switch + Low Noise Down Conversion Mixer for PHS Description The CXG1051AFN is an MMIC consisting of the power amplifier, antenna switch and low noise down conversion mixer. This IC is designed using the Sony's GaAs J-FET
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CXG1051AFN
CXG1051AFN
26-pin
150mA
current08
HSOF-26P-01
12IFR
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Untitled
Abstract: No abstract text available
Text: CXG1096FN Power Amplifier/Antenna Switch + Low Noise Down Conversion Mixer for PHS For the availability of this product, please contact the sales office. Description The CXG1096FN is an MMIC consisting of the power amplifier, diversity antenna supported switch
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CXG1096FN
CXG1096FN
26-pin
150mA
26PIN
HSOF-26P-01
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Untitled
Abstract: No abstract text available
Text: CXG1053FN Power Amplifier/Antenna Switch + Low Noise Amplifier/Down Conversion Mixer for PHS Description The CXG1053FN is an MMIC consisting of the power amplifier, antenna switch, low noise amplifier and down conversion mixer. This IC is designed using the Sony's GaAs J-FET
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CXG1053FN
CXG1053FN
26-pin
150mA
26PIN
HSOF-26P-01
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2 LOIF
Abstract: CXG7001FN rf23 12IFR HSOF-26P
Text: CXG7001FN PHS用パワーアンプ／アンテナスイッチ＋ローノイズダウンコンバージョンミキサ 概 要 CXG7001FNは，ソニーGaAs J-FETプロセスによる 単一正電源動作を特長としたPHS用パワーアンプ／ アンテナスイッチ, ローノイズダウンコンバージョン
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CXG7001FN
CXG7001FNGaAs
HSOF-26P
IDD150mA
POUT20
Gp39dB
IP3-13dBm
IMR40dBc
12IFR44dBc
2 LOIF
CXG7001FN
rf23
12IFR
HSOF-26P
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rario
Abstract: CXG1051AFN
Text: CXG1051AFN Power Amplifier/Antenna Switch + Low Noise Down Conversion Mixer for PHS Description The CXG1051AFN is an MMIC consisting of the power amplifier, antenna switch and low noise down conversion mixer. This IC is designed using the Sony's GaAs J-FET
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CXG1051AFN
CXG1051AFN
26-pin
150mA
100pF
100nF
26PIN
HSOF-26P-01
rario
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m 110b1
Abstract: ACPR400 ACPR600 BLF4G20LS-110B RF35 PHILIPS GSM I Q
Text: BLF4G20LS-110B UHF power LDMOS transistor Rev. 01 — 10 January 2006 Product data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance
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BLF4G20LS-110B
ACPR400
ACPR600
ACPR400
ACPR600
m 110b1
BLF4G20LS-110B
RF35
PHILIPS GSM I Q
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transistor 2N2222 SMD
Abstract: capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor TRANSISTOR SMD L3 GP 0,47K w2 smd transistor ACPR1980
Text: BLF4G10LS-160 UHF power LDMOS transistor Rev. 01 — 19 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance
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BLF4G10LS-160
ACPR400
ACPR600
BLF4G10LS-160
transistor 2N2222 SMD
capacitor 2200 uF
smd transistor l6
2n2222 smd
2n2222 smd transistor
L5 smd transistor
TRANSISTOR SMD L3
GP 0,47K
w2 smd transistor
ACPR1980
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sony transmitter
Abstract: CXG7001FN
Text: CXG7001FN Power Amplifier/Antenna Switch + Low Noise Down Conversion Mixer for PHS Description The CXG7001FN is a MMIC consisting of the power amplifier, antenna switch and low noise down conversion mixer. This IC is designed using the Sony’s GaAs J-FET
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CXG7001FN
CXG7001FN
26-pin
150mA
HSOF-26P-01
sony transmitter
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Untitled
Abstract: No abstract text available
Text: CXG1051AFN Power Amplifier/Antenna Switch + Low Noise Down Conversion Mixer for PHS Description The CXG1051AFN is an MMIC consisting of the power amplifier, antenna switch and low noise down conversion mixer. This IC is designed using the Sony's GaAs J-FET
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CXG1051AFN
CXG1051AFN
26-pin
150mA
26PIN
HSOF-26P-01
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Untitled
Abstract: No abstract text available
Text: CXG1015N Power Amplifier/Antenna Switch for PHS For the availability of this product, please contact the sales office. Description The CXG1015N is a power amplifier/antenna switch MMIC for PHS. This is designed using the Sony’s GaAs J-FET process and operates at a
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CXG1015N
CXG1015N
20-pin
20PIN
25MAX
SSOP-20P-L03
SSOP020-P-0044
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smd code HF transistor
Abstract: BLF3G21-6
Text: BLF3G21-6 UHF power LDMOS transistor Rev. 01 — 25 June 2008 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical class-AB RF performance
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BLF3G21-6
ACPR600k
BLF3G21-6
smd code HF transistor
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Untitled
Abstract: No abstract text available
Text: BLF7G20L-160P; BLF7G20LS-160P Power LDMOS transistor Rev. 01 — 22 June 2010 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance
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BLF7G20L-160P;
BLF7G20LS-160P
ACPR400k
ACPR600k
BLF7G20L-160P
7G20LS-160P
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sony power amplifier
Abstract: No abstract text available
Text: SONY CXG1030N Power Amplifier for PHS Description 16 pin SSOP Plastic The CXG1030N is a power amplifier for PHS. This IC is designed using the Sony’s GaAs J-FET process and operates at a single power supply. Features • Output power 21 dBm • Positive power supply
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OCR Scan
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CXG1030N
16-pin
CXG1030N
16PIN
SSOP-16P-L01
6-P-0044
sony power amplifier
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