BLF7G20L-90P
Abstract: 1800 ldmos BLF7G20LS-90P RF35 PLW70
Text: BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 01 — 28 April 2010 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance
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BLF7G20L-90P;
BLF7G20LS-90P
ACPR400k
ACPR600k
BLF7G20L-90P
7G20LS-90P
1800 ldmos
BLF7G20LS-90P
RF35
PLW70
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PDF
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BLF7G20LS-140P
Abstract: 850 SMD Rework Station RF35
Text: BLF7G20LS-140P Power LDMOS transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance
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BLF7G20LS-140P
ACPR400k
ACPR600k
BLF7G20LS-140P
850 SMD Rework Station
RF35
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SmD TRANSISTOR a75
Abstract: No abstract text available
Text: BLF7G20LS-140P Power LDMOS transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance
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BLF7G20LS-140P
ACPR400k
ACPR600k
SmD TRANSISTOR a75
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Untitled
Abstract: No abstract text available
Text: BLF7G20L-160P; BLF7G20LS-160P Power LDMOS transistor Rev. 01 — 22 June 2010 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance
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BLF7G20L-160P;
BLF7G20LS-160P
ACPR400k
ACPR600k
BLF7G20L-160P
7G20LS-160P
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W13B
Abstract: No abstract text available
Text: BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 2 — 20 October 2011 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz, designed for operation at 1427 MHz to1525 MHz, 1805 MHz to
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BLF7G20L-90P;
BLF7G20LS-90P
to1525
ACPR400k
ACPR600k
BLF7G20L-90P
7G20LS-90P
W13B
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BLF6G20
Abstract: BLF6G20-75 C3225X7R1H155M C5750X7R1H106M RF35 SM270 gp 752
Text: BLF6G20-75; BLF6G20LS-75 Power LDMOS transistor Rev. 02 — 9 February 2009 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance
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BLF6G20-75;
BLF6G20LS-75
ACPR400k
ACPR600k
BLF6G20-75
BLF6G20LS-75
BLF6G20
C3225X7R1H155M
C5750X7R1H106M
RF35
SM270
gp 752
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PDF
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Untitled
Abstract: No abstract text available
Text: BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 2 — 20 October 2011 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz, designed for operation at 1427 MHz to1525 MHz, 1805 MHz to
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Original
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BLF7G20L-90P;
BLF7G20LS-90P
to1525
ACPR400k
ACPR600k
BLF7G20L-90P
7G20LS-90P
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C5750X7R1H106M
Abstract: C3225X7R1H155M RF35 SM270 TRANSISTOR 751
Text: BLF6G20LS-75 Power LDMOS transistor Rev. 01 — 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance
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BLF6G20LS-75
ACPR400k
ACPR600k
BLF6G20LS-75
C5750X7R1H106M
C3225X7R1H155M
RF35
SM270
TRANSISTOR 751
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850 SMD Rework Station
Abstract: BLF7G20LS-140P RF35 quick 850 SMD Rework Station BLF7G20L-140P
Text: BLF7G20L-140P; BLF7G20LS-140P Power LDMOS transistor Rev. 01 — 21 April 2010 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance
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Original
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BLF7G20L-140P;
BLF7G20LS-140P
ACPR400k
ACPR600k
BLF7G20L-140P
7G20LS-140P
850 SMD Rework Station
BLF7G20LS-140P
RF35
quick 850 SMD Rework Station
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PDF
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C5750X7R1H106M
Abstract: SM270 BLF6G20-75 C3225X7R1H155M RF35
Text: BLF6G20-75 Power LDMOS transistor Rev. 01 — 6 March 2008 Preliminary data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
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BLF6G20-75
ACPR400k
ACPR600k
BLF6G20-75
C5750X7R1H106M
SM270
C3225X7R1H155M
RF35
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