ABVZ
Abstract: 1N1742 1N1742A 20C6
Text: MIL-S-19500/298 21 Ocmbor 1964 ● MILITARY SEMICONDUCTOR SPECIFICATION DEVfCE, TYPE 1. USAF DIODE, SILICON 1N1742A SCOPE 1.1 Oescri Ion. This specification covers voltxe-re + erence &ode, and is in accordance ehalf not be used for new design. 1.2 Madmum
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MIL-S-19500/298
1N1742A
MLL-5-19500
P12EPARATJON
MIL-S-195W.
K2L-S-195W
ABVZ
1N1742
1N1742A
20C6
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78H68
Abstract: marking 5U MARKING IBW marking A9 62b21
Text: 3C=*' C? @Y\R>@Cc ' : .99' 64;.9 >.;?6?@<> % ><1 A0@' A: : .>E 7NJ\]ZN[ ) ;I S ) 6;4AA8? ' ;I"^]#$\Pf S A;4A68@ 8AF@ B78 S ' B: <6 ?8H8? / D4F87 +( K ) >I / *- \" ) >I / +0 $; /&) 7 S H4?4A6;8 D4F87 S 7/ 'S. D4F87 + " .- * + S + 5 9D88 ?
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E78E
Abstract: 6GDG ABV MARKING marking 4f6 bg marking FG-46 b787
Text: 3B=* +@6 # <?5" # & E $ & 9 -88& 53: -8 '=-: >5>?;= $ =;0@/?& @9 9 -=D 7MI[\YMZ 9I S G4? * 6;4AA8? ' 9I"^]#$\Pf S A;4A68@ 8AF@ B78 S & B: <6 ?8H8? / D4F87 +( K ) =I / ),( \" ) =I / *+( $9 %)&- 6 S - CDBF86F87 F=%JIEF%. S + G4?<9<87 466BD7<A: +
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466BD
E78E
6GDG
ABV MARKING
marking 4f6
bg marking
FG-46
b787
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marking 8d
Abstract: marking 8E 8d4f marking IBW 8D marking MARKING 3B
Text: 3B=*'/@6 # <?5" # & E $ & 9 -8 8& 53: -8'=-: >5>?;= $ =;0@/?& @9 9 -=D 7MI[\YMZ 9I S G4? * 6;4AA8? ' 9I"^]#$\Pf S A;4A68@ 8AF@ B78 S & B: <6 ?8H8? / D4F87 %+ K ) =I / 0( \" ) =I / )+( $9 %*&( 6 S - CDBF86F87 F=%JIEF%. S + G4?<9<87 466BD7<A: FB +
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466BD
marking 8d
marking 8E
8d4f
marking IBW
8D marking
MARKING 3B
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Untitled
Abstract: No abstract text available
Text: 3B=*'/@6 #<?5"#&E$&9-88&53:-8'=-:>5>?;= $=;0@/?&@99-=D 7MI[\YMZ 9I S G4?* 6;4AA8? ' 9I"^]#$\Pf S A;4A68@8AF@B78 S&B:<6?8H8? /D4F87 %+ K ) =I / 0( \ ) =I / )+( $9 %*&( 6 S - CDBF86F87 F=%JIEF%. S+G4?<9<87466BD7<A:FB +
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D4F87
CDBF86F87
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Untitled
Abstract: No abstract text available
Text: P2811A/B and P2812A/B and P2814A/B Low Power EMI Reduction IC Features • FCC approved method of EMI attenuation • Provides up to 15dB EMI reduction • Generates a 1x, 2x and 4x low EMI spread spectrum clock of the input frequency o 1x: P2811A/B o 2x: P2812A/B
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P2811A/B
P2812A/B
P2814A/B
10MHz
40MHz
CY25811,
CY25812
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Untitled
Abstract: No abstract text available
Text: P2811A/B and P2812A/B and P2814A/B Low Power EMI Reduction IC Features • FCC approved method of EMI attenuation • Provides up to 15dB EMI reduction • Generates a 1x, 2x and 4x low EMI spread spectrum clock of the input frequency o 1x: P2811A/B o 2x: P2812A/B
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P2811A/B
P2812A/B
P2814A/B
P2811A/B
P2812A/B
10MHz
40MHz
CY25811,
CY25812
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p281
Abstract: CY25811 CY25812 CY25814 i2811
Text: P2811A/B and P2812A/B and P2814A/B Low Power EMI Reduction IC Features • FCC approved method of EMI attenuation • Provides up to 15dB EMI reduction • Generates a 1x, 2x and 4x low EMI spread spectrum clock of the input frequency o 1x: P2811A/B o 2x: P2812A/B
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P2811A/B
P2812A/B
P2814A/B
P2811A/B
P2812A/B
10MHz
40MHz
CY25811,
CY25812
p281
CY25811
CY25812
CY25814
i2811
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Untitled
Abstract: No abstract text available
Text: ABRIDGED DATA SHEET 19-3375; Rev 0; 7/04 Dual SPDT Analog Switches with Over-Rail Signal Handling The MAX4850/MAX4850H/MAX4852/MAX4852H family of dual SPDT single-pole/double-throw switches operate from a single +2V to +5.5V supply and can handle signals greater than the supply rail. These switches feature low 3.5Ω or 3.5Ω/7Ω on-resistance with low oncapacitance, making them ideal for switching audio
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MAX4850/MAX4850H/MAX4852/MAX4852H
MAX4850/MAX4850H
MAX4852
MO220
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MAX4852
Abstract: MAXIM TOP MARKING MAX4850 MAX4850ETE MAX4850H MAX4850HETE MAX4852H marking abz MAXIM MARKING AAAA JEDEC-MO-220
Text: ABRIDGED DATA SHEET 19-3375; Rev 0; 7/04 Dual SPDT Analog Switches with Over-Rail Signal Handling The MAX4850/MAX4850H/MAX4852/MAX4852H family of dual SPDT single-pole/double-throw switches operate from a single +2V to +5.5V supply and can handle signals greater than the supply rail. These switches feature low 3.5Ω or 3.5Ω/7Ω on-resistance with low oncapacitance, making them ideal for switching audio
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MAX4850/MAX4850H/MAX4852/MAX4852H
MAX4850/MAX4850H
MAX4852
MO220
MAXIM TOP MARKING
MAX4850
MAX4850ETE
MAX4850H
MAX4850HETE
MAX4852H
marking abz
MAXIM MARKING AAAA
JEDEC-MO-220
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TOP MARK
Abstract: MAX6400 MAX6401 MAX6402 MAX6404 MAX6405 MARKING ADG UCSP4 MAX6404BS40 marking code acw transistor
Text: 19-2043; Rev 0; 5/01 µP Supervisory Circuits in 4-Bump 2 ✕ 2 Chip-Scale Package Applications Portable/Battery-Powered Equipment Cell Phones PDAs MP3 Players Pagers Selector Guide PART NOMINAL VTH (V) RESET/RESET OUTPUT TYPE MAX6400 2.20 to 3.08 Push-Pull, Active-Low
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MAX6400
MAX6401
MAX6402
MAX6403
MAX6404
500nA
MAX6400/MAX6401/MAX6402)
100mV
-40an
MAX6400
TOP MARK
MAX6401
MAX6402
MAX6404
MAX6405
MARKING ADG
UCSP4
MAX6404BS40
marking code acw transistor
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C T O R tm FDZ5047N 30V N-Channel Logic Level PowerTrench BGA MOSFET General Description Features Combining Fairchild’s 30V PowerTrench process with state of the art BGA packaging, the FDZ5047N minimizes both PCB space and R DS on . This BGA
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FDZ5047N
O-220
300ps,
FDZ5047N
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C T O R tm FDD6612A N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state
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FDD6612A
FDD6612A,
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Untitled
Abstract: No abstract text available
Text: E M I C O N D U C T O R tm FDD6680A N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state
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FDD6680A
FDD6680A,
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C TO R tm FDC6305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features T hese N -C hannel low th re sh o ld 2.5V sp e cifie d MOSFETs are produced using Fairchild Semiconductor's ad van ced P ow erT rench process th a t has been
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FDC6305N
FDC6305N,
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Untitled
Abstract: No abstract text available
Text: EMI C O N D U C T O R PRELIMINARY tm FDD5680 N-Channel, PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to m inimize the on-state
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FDD5680
FDD5680,
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C T O R ADVANCE INFORMATION tm FDZ5045N 30V N-Channel Logic Level PowerTrench BGA MOSFET General Description Features Combining Fairchild’s 30V PowerTrench process with state of the art BGA packaging, the FDZ5045N minimizes both PCB space and R DS on . This BGA
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FDZ5045N
30mmz
O-220
FDZ5045N
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FDD5690
Abstract: No abstract text available
Text: =M l C O N D U C T O R tm FDD5690 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDD5690
FDD5690,
FDD5690
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FDS9933A
Abstract: No abstract text available
Text: c ; CJ V :L jL J C v FDS9933A Dual P-Channel 2.5V Specified PowerTrench MOSFET G eneral Description Features These P-Channel 2.5V specified M OSFETsare produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored to minimize the
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FDS9933A
FDS9933A
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FDG313N
Abstract: SC70-6 marking SC70 BC
Text: S E M IC O N D U C TO R tm FDG313N Digital FET, N-Channel G eneral D e scrip tio n Features T h is N -C h a n n e l e n h a n c e m e n t m o d e fie ld e ffe c t transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density
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FDG313N
FDG313N
SC70-6
marking SC70 BC
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IN5008
Abstract: 1N5008 1N5022 1N5009 IN4992 1N4938-1 1N4942 1N4944 1N4947 1N4948
Text: PIV lo 25°C VF IR Volts Amps Volts mA Type No. 1N4938-1 1N4942 1N4944 1N4946 1N4947 1N4948 Zener Type No. .1 55QC A 1.0 200 1.0 400 600 1.0 800 1.0 1.0 1000 2ener foltage 3t IzT Volts @ mA 200 1N4954 1N4955 1N4956 6.8 7.5 8.2 1N4957 1N4958 1N4959 9.1 10.0
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1N4938-1
1N4942
1N4944
IN4946
1N4947
1N4948
1N4954
1N4955
1N4956
1N4957
IN5008
1N5008
1N5022
1N5009
IN4992
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Untitled
Abstract: No abstract text available
Text: =M l C O N D U C T O R PRELIMINARY tm FDS6614A N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level M OSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to m inimize on-state
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FDS6614A
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marking code maxim label
Abstract: MARKING W1 AD CBVK741B019 F011 F63TNR FDS6614A FDS9953A L86Z
Text: =M l C O N D U C T O R PRELIMINARY tm FDS6614A N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level M O SFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state
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FDS6614A
marking code maxim label
MARKING W1 AD
CBVK741B019
F011
F63TNR
FDS6614A
FDS9953A
L86Z
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Untitled
Abstract: No abstract text available
Text: 1 9 9 9 =M l C O N D U C T O R tm FDR838P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2 .5 V specified M O SFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the
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FDR838P
allert01
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