Ablecube
Abstract: ATM-0018 Ablestik ATM-0087 ablebond ablebond technical 8200C ATM-0089 ablebond ablestik ablestik ablebond
Text: PILOT TECHNICAL DATASHEET ABLEBOND 8200C ELECTRICALLY CONDUCTIVE DIE ATTACH ADHESIVE DESCRIPTION ABLEBOND® 8200C low bleed die attach adhesive is designed for small and medium sized dies across a variety of leadframes including PPF, Cu and Ag. This electrically conductive adhesive offers improved JEDEC
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8200C
8200C
RP-751
Ablecube
ATM-0018
Ablestik
ATM-0087
ablebond
ablebond technical
ATM-0089
ablebond ablestik
ablestik ablebond
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JEDEC JESD22-B116 free
Abstract: SUMIKON EME-G700 EME-G700 ablebond 3230 SUMItomo EME-G700 Sumitomo EME-G700 material Ablebond 84-1*SR4 Ablebond 8390 sumitomo G700 Tg ablebond 8390 cure time
Text: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: SR-0212-02 DATE: 12/20/2002 Product Affected: TSOP package family (see attachment for affected part #s). Date Effective: 3/20/2003 Contact: George Snell
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SR-0212-02
EME-G700
JEDEC JESD22-B116 free
SUMIKON EME-G700
EME-G700
ablebond 3230
SUMItomo EME-G700
Sumitomo EME-G700 material
Ablebond 84-1*SR4
Ablebond 8390
sumitomo G700 Tg
ablebond 8390 cure time
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8361H
Abstract: CEL9200 CY7B9514V
Text: Cypress Semiconductor Qualification Report QTP# 98051 VERSION 1.0 April, 1999 ATM & SONET/SDH - SM13B Technology - Fab 2 CY7B9514V 3.3V Quad SONET Transceiver Cypress Semiconductor Quality and Reliability Department Cypress Semiconductor 3.3V Quad SONET Transceiver
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SM13B
CY7B9514V
CYB9514V
7C951AV)
100-pin
Leve619803937
8361H
CEL9200
CY7B9514V
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84-1LMI
Abstract: NDA-310-D
Text: NDA-310-D *D,Q3*D$V +%7 00,& ',675,%87 ' $03/, ,(5 '& 72 *+] 7\SLFDO $SSOLFDWLRQV • Narrow and Broadband Commercial and Military Radio Designs • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs • Linear and Saturated Amplifiers GENERAL PURPOSE
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NDA-310-D
NDA-310-D
84-1LMI
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Dp 140c
Abstract: CY7C006 CY7C016 CY7C025 CY7C0251 JESD22 8361H
Text: Cypress Semiconductor Qualification Report QTP# 98302 VERSION 1.2 March, 1999 Dual Port SRAM - R28 Technology - Fab 2 CY7C025 8K x 16 Dual Port SRAM CY7C0251 8K x 18 Dual Port SRAM CY7C006 16K x 8 Dual Port SRAM CY7C016 16K x 9 Dual Port SRAM Cypress Semiconductor
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CY7C025
CY7C0251
CY7C006
CY7C016
7C0251D)
7C0251D
CY7C0251-AC
Dp 140c
CY7C006
CY7C016
CY7C025
CY7C0251
JESD22
8361H
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C103 pnp
Abstract: transistor 131-G chip die npn transistor Ablestik 84-1LMIS
Text: Low Distortion, High Speed Rail-to-Rail Input/Output Amplifier AD8028-KGD-CHIP Known Good Die FEATURES High speed 190 MHz, –3 dB bandwidth G = +1 100 V/µs slew rate Low distortion 120 dBc @ 1 MHz SFDR 80 dBc @ 5 MHz SFDR Selectable input crossover threshold
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AD8028-KGD-CHIP
AD8028-KGDCHIP
84-1LMIS
AD8028-KGD-CHIP
10-Pad
C-10-3
D10787-0-11/12
C103 pnp
transistor 131-G
chip die npn transistor
Ablestik 84-1LMIS
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Untitled
Abstract: No abstract text available
Text: NDA-310-D 4 GaInP/GaAs HBT MMIC DISTRIBUTED AMPLIFIER DC TO 15GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs Military Radio Designs • Linear and Saturated Amplifiers GENERAL PURPOSE
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NDA-310-D
15GHz
NDA-310-D
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transistor 131-G
Abstract: No abstract text available
Text: Known Good Die Low Distortion, High Speed Rail-to-Rail Input/Output Amplifier AD8028-KGD-CHIPS FEATURES High speed 190 MHz, –3 dB bandwidth G = +1 100 V/µs slew rate Low distortion 120 dBc @ 1 MHz SFDR 80 dBc @ 5 MHz SFDR Selectable input crossover threshold
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AD8028-KGD-CHIPS
AD8028-KGDCHIPS
84-1LMIS
AD8028-KGD-CHIPS
10-Pad
C-10-3
D10787-0-9/12
transistor 131-G
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Ablestik 84-1LMIS
Abstract: chip die npn transistor
Text: Known Good Die Low Distortion, High Speed Rail-to-Rail Input/Output Amplifier AD8028-KGD-CHIPS FEATURES High speed 190 MHz, –3 dB bandwidth G = +1 100 V/µs slew rate Low distortion 120 dBc @ 1 MHz SFDR 80 dBc @ 5 MHz SFDR Selectable input crossover threshold
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AD8028-KGD-CHIPS
AD8028-KGDCHIPS
84-1LMIS
AD8028-KGD-CHIPS
D10787-0-7/12
Ablestik 84-1LMIS
chip die npn transistor
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NDA-310-D
Abstract: VCC1
Text: NDA-310-D InGaP/GaAs HBT MMIC DISTRIBUTED AMPLIFIER DC TO 15GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs Military Radio Designs • Linear and Saturated Amplifiers Product Description
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NDA-310-D
NDA-310-D
10GHz
14GHz
15GHz
20GHz
VCC1
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Untitled
Abstract: No abstract text available
Text: Known Good Die Low Distortion, High Speed Rail-to-Rail Input/Output Amplifier AD8028-KGD-CHIPS FEATURES High speed 190 MHz, –3 dB bandwidth G = +1 100 V/µs slew rate Low distortion 120 dBc @ 1 MHz SFDR 80 dBc @ 5 MHz SFDR Selectable input crossover threshold
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AD8028-KGD-CHIPS
AD8028-KGDCHIPS
84-1LMIS
D10787-0-7/12
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Ablestik
Abstract: CY7C024 CY7C0241 CY7C139 CY7C144 CY7C145
Text: Cypress Semiconductor Qualification Report QTP# 98393 VERSION 1.3 March, 1999 Dual Port SRAM - R28 Technology - Fab 2 CY7C0241 4K x 18 Dual Port SRAM CY7C024 4K x 16 Dual Port SRAM CY7C145 8K x 9 Dual Port SRAM CY7C144 8K x 8 Dual Port SRAM CY7C139 4K x 9 Dual Port SRAM
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CY7C0241
CY7C024
CY7C145
CY7C144
CY7C139
CY7C1342/135/138
CY7C133/143
7C0241C)
CY7C0251-AC
Ablestik
CY7C024
CY7C0241
CY7C139
CY7C144
CY7C145
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NT 407 F transistor
Abstract: SNA-376 nt 407 f 100C 120C 135C 155C 84-1LMIT1 SNA-300
Text: Product Description SNA-300 Stanford Microdevices’ SNA-300 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides 22dB of gain when biased at 35mA and 4V. External DC decoupling capacitors determine low frequency response. The use of an external resistor allows for bias
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SNA-300
SNA-300
SNA-376,
11the
84-1LMIT1
NT 407 F transistor
SNA-376
nt 407 f
100C
120C
135C
155C
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Ablestik 84-1LMIT1 DATASHEET
Abstract: 84-1lmit1 100C 130C 155C SNA-400 SNA-476
Text: Product Description SNA-400 Stanford Microdevices’ SNA-400 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides 13dB of gain when biased at 70mA and 5.0V. P1dB and TOIP may be improved by 2dB by biasing @ 100mA. DC-8 GHz, Cascadable
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SNA-400
SNA-400
100mA.
SNA-476,
84-1LMIT1
Ablestik 84-1LMIT1 DATASHEET
100C
130C
155C
SNA-476
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110C
Abstract: 140C 155C 84-1LMIT1 SNA-600 SNA-676 linear amplifier P1dB 36dBm
Text: Product Description SNA-600 Stanford Microdevices’ SNA-600 is a high-performance GaAs Heterojunction Bipolar Transistor MMIC in die form. A Darlington configuration is utilized for broadband performance to 6.5 GHz. DC-6.5 GHz, Cascadable GaAs MMIC Amplifier
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SNA-600
SNA-600
18dBm
100mA.
SNA-676,
84-1LMIT1
110C
140C
155C
SNA-676
linear amplifier P1dB 36dBm
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NT1004
Abstract: Ablestik 84-1LMIT1 120C 155C 84-1LMIT1 DC-10 SNA-100 SNA-176 DB266
Text: Product Description SNA-100 Stanford Microdevices’ SNA-100 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides 12dB of gain when biased at 50mA and 4V. External DC decoupling capacitors determine low frequency response. The use of an external resistor allows for bias
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SNA-100
SNA-100
DC-10
SNA-176,
84-1LMIT1
NT1004
Ablestik 84-1LMIT1
120C
155C
SNA-176
DB266
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NDA-310-D
Abstract: 84-1LMI Ablebond 190
Text: GaInP/GaAs HBT MMIC Distributed Amplifier NDA-310-D DC-15 GHz 6000048 Rev. A 1 Features Applications • • • • • • • Reliable low-cost HBT-based design 9 dB Gain, +14.8 dBm P1dB @ 2 GHz High P1dB of +15.0 dBm at 6.0 GHz and +9.4 dBm at 14.0 GHz
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NDA-310-D
DC-15
84-1LMI
10420-F
NDA-310-D
Ablebond 190
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amplifier mmic 576
Abstract: SNA-500 SNA-576 SNA 586 datasheet 100C 130C 155C 84-1LMIT1
Text: Product Description SNA-500 Stanford Microdevices’ SNA-500 is a GaAs monolithic broadband amplifier in die form. This amplifier provides 19dB of gain when biased at 70mA and 5.0V. P1dB and TOIP may be improved by 2dB by baising @ 100mA. DC-3 GHz, Cascadable
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SNA-500
SNA-500
100mA.
SNA-576,
84-1LMIT1
amplifier mmic 576
SNA-576
SNA 586 datasheet
100C
130C
155C
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Untitled
Abstract: No abstract text available
Text: E l Stanford Microdevices Product Description SNA-200 Stanford Microdevices' SNA-200 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides !6dB of gain when biased at 50mA and 4V. DC-6.5 GHz, Cascadable GaAs MMIC Amplifier External DC decoupling capacitors determine low frequency
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SNA-200
SNA-276,
SNA-200
84-1LMIT1
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Untitled
Abstract: No abstract text available
Text: What HEWLETT mL'HM P A C K A R D B eam L ead PIN D iode Technical Data 5082-3900 Features • H igh B reak d o w n Voltage 200 V Minimum • Low C apacitance 0.02 pF Typical • R ugged C o n stru ctio n 2 grams Minimum Lead Pull • N itrid e P assiv ated
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Untitled
Abstract: No abstract text available
Text: e=DStanford Microdevices Product Description SNA-100 Stanford Microdevices’ SNA-100 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides 12dB of gain when biased at 50mA and 4V. DC-10 GHz, Cascadable GaAs MMIC Amplifier External DC decoupling capacitors determine low frequency
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SNA-100
SNA-176,
SNA-100
DC-10
84-1LMIT1
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Untitled
Abstract: No abstract text available
Text: • 4 4 4 7 5 6 4 D D D 1 70 1 5TD ■ H P A HEWLETT-PACKARD/ CHPNTS fj&fll H E W L E T T 1"MM PACKARD blE » Beam Lead PIN Diode Technical Data 5082-3900 Features • H igh B reak d o w n V oltage 200 V Minimum • Low C ap acitan ce 0.02 pF Typical • R ugged C o n stru ctio n
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Untitled
Abstract: No abstract text available
Text: IStanford Microdevices Product Description SNA-600 Stanford M icrodevices’ SNA-600 is a high-perform ance GaAs Heterojunction Bipolar Transistor MMIC in die form. A Darlington configuration is utilized for broadband perfor mance to 6.5 GHz. DC-6.5 GHz, Cascadable
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SNA-600
SNA-600
18dBm
100mA.
SNA-676,
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Untitled
Abstract: No abstract text available
Text: Product Description SNA-300 Stanford M icrodevices’ SNA-300 is a GaAs m onolithic broad band am plifier MMIC in die form. This am plifier provides 22dB of gain when biased at 35m A and 4V. External DC decoupling capacitors determ ine low frequency response. The use of an external resistor allow s for bias
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SNA-300
SNA-300
SNA-376,
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