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    GTO thyristor Curve properties

    Abstract: ABB 5SGY 35L4502 ABB 5SGy GTO thyristor ABB snubber IGCT ABB GTO gate unit gto dc converter abb GTO thyristor driver igct abb diode DS1
    Text: ABB Semiconductors AG Section 3 SECTION 3 DATA SHEET USER’S GUIDE BY ANTON SCHWEIZER S 3-1 ABB Semiconductors AG Section 3 DATA SHEET USER’S GUIDE 3.1 GTOs Introduction This section is a detailed guide to proper understanding of a GTO data sheet. Parameters and ratings will be defined, and illustrated by


    Original     		PDF 30J4502 35L4502 GTO thyristor Curve properties ABB 5SGY 35L4502 ABB 5SGy GTO thyristor ABB snubber IGCT ABB GTO gate unit gto dc converter abb GTO thyristor driver igct abb diode DS1

    GTO thyristor ABB

    Abstract: reverse-conducting thyristor GTO ABB gto peak reverse voltage test abb GTO thyristor RC snubber dv/dt diode gto 5SGR 30L4502 gto switching test abb ABB GTO ABB thyristor 5
    Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 3000 24 1.90 0.70 2800 V A kA V mΩ V Reverse Conducting Gate turn-off Thyristor 5SGR 30L4502 Doc. No. 5SYA 1216-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 30L4502 30L4502 CH-5600 GTO thyristor ABB reverse-conducting thyristor GTO ABB gto peak reverse voltage test abb GTO thyristor RC snubber dv/dt diode gto 5SGR 30L4502 gto switching test abb ABB GTO ABB thyristor 5

    GTO thyristor

    Abstract: ABB GTO ABB thyristor 5 THYRISTOR GTO gto peak reverse voltage test abb GTO thyristor ABB
    Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 4000 25 1.20 0.65 2800 V A kA V Gate turn-off Thyristor 5SGF 40L4502 mΩ V Doc. No. 5SYA 1209-03 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 40L4502 40L4502 CH-5600 GTO thyristor ABB GTO ABB thyristor 5 THYRISTOR GTO gto peak reverse voltage test abb GTO thyristor ABB

    GTO ABB 5SGA 2046

    Abstract: IG 2200 19
    Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 3000 25x103 1.9 0.53 2200 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGA 30J4505 Doc. No. 5SYA1204-04 Sept. 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 30J4505 5SYA1204-04 CH-5600 GTO ABB 5SGA 2046 IG 2200 19

    ABB thyristor 5

    Abstract: GTO ABB GTO thyristor ABB
    Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 6000 3000 24 1.70 0.60 3800 V A kA V Gate turn-off Thyristor 5SGT 30J6004 mΩ V Doc. No. 5SYA 1212-04 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 30J6004 30J6004 CH-5600 ABB thyristor 5 GTO ABB GTO thyristor ABB

    GTO thyristor ABB

    Abstract: ABB thyristor 5 GTO ABB GTO thyristor gto switching test abb 5sgf30j4502
    Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 3000 24 1.80 0.70 3000 V A kA V Gate turn-off Thyristor 5SGF 30J4502 mΩ V PRELIMINARY Doc. No. 5SYA 1211-04 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 30J4502 30J4502 CH-5600 GTO thyristor ABB ABB thyristor 5 GTO ABB GTO thyristor gto switching test abb 5sgf30j4502

    gto Gate Drive

    Abstract: gto Gate Drive circuit GTO thyristor ABB GTO ABB thyristor 5 GTO ABB
    Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 3000 30 1.17 0.31 2800 V A kA V Gate turn-off Thyristor 5SGT 30J4502 mΩ V PRELIMINARY Doc. No. 5SYA 1215-03 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 30J4502 30J4502 CH-5600 gto Gate Drive gto Gate Drive circuit GTO thyristor ABB GTO ABB thyristor 5 GTO ABB

    ABB thyristor 5

    Abstract: 5SGA20H4502
    Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 2000 13 1.80 0.85 2200 V A kA V Gate turn-off Thyristor 5SGA 20H4502 mΩ V Doc. No. 5SYA 1210-01 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 20H4502 CH-5600 ABB thyristor 5 5SGA20H4502

    ABB thyristor 5

    Abstract: cosmic GTO thyristor ABB 30J250
    Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 3000 30 1.50 0.33 1400 V A kA V Gate turn-off Thyristor 5SGA 30J2501 mΩ V Doc. No. 5SYA 1213-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 30J2501 CH-5600 ABB thyristor 5 cosmic GTO thyristor ABB 30J250

    ABB thyristor 5

    Abstract: GTO thyristor ABB THYRISTOR GTO
    Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 4000 25 1.08 0.29 2800 V A kA V Gate turn-off Thyristor 5SGT 40L4502 mΩ V MARKETING INFORMATION Doc. No. 5SYA 1235-00 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 40L4502 40L4502 CH-5600 ABB thyristor 5 GTO thyristor ABB THYRISTOR GTO

    A125

    Abstract: B125 C125 D125
    Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 2500 1500 10x103 1.45 0.90 1400 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGA 15F2502 Doc. No. 5SYA1214-02 Oct. 06 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 15F2502 5SYA1214-02 CH-5600 A125 B125 C125 D125

    vt 1202

    Abstract: ABB thyristor 5 IP350K gto 5sga
    Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 3000 24 2.20 0.60 2800 V A kA V Gate turn-off Thyristor 5SGA 30J4502 mΩ V Doc. No. 5SYA 1202-03 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 30J4502 CH-5600 vt 1202 ABB thyristor 5 IP350K gto 5sga

    gto 5sga

    Abstract: GTO thyristor ABB ABB thyristor ABB thyristor 5 gto Gate Drive circuit ABB 5SGA ABB 5SGA 20H2501
    Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 2000 16 1.66 0.57 1400 V A kA V Gate turn-off Thyristor 5SGA 20H2501 mΩ V Doc. No. 5SYA 1205-01 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 20H2501 CH-5600 gto 5sga GTO thyristor ABB ABB thyristor ABB thyristor 5 gto Gate Drive circuit ABB 5SGA ABB 5SGA 20H2501

    5SGA40L4501

    Abstract: ABB 5SGA 40L4501 ABB thyristor 5 GTO thyristor ABB
    Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 4000 25 2.10 0.58 2800 V A kA V Gate turn-off Thyristor 5SGA 40L4501 mΩ V Doc. No. 5SYA 1208-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 40L4501 CH-5600 5SGA40L4501 ABB 5SGA 40L4501 ABB thyristor 5 GTO thyristor ABB

    GTO thyristor ABB

    Abstract: ABB 5SGA ABB GTO ABB thyristor 5
    Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 1500 10 1.55 0.63 1400 V A kA V Gate turn-off Thyristor 5SGA 15F2502 mΩ V Doc. No. 5SYA 1214-01 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 15F2502 CH-5600 GTO thyristor ABB ABB 5SGA ABB GTO ABB thyristor 5

    abb 2040

    Abstract: No abstract text available
    Text: VDRM ITGQM ITSM VT0 rT VDClink = 2500 V = 3000 A = 30 kA = 1.5 V = 0.33 mΩ = 1400 V Gate turn-off Thyristor 5SGA 30J2501 Doc. No. 5SYA1213-02 Jan. 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 30J2501 5SYA1213-02 CH-5600 abb 2040

    ABB 5SGA

    Abstract: ABB thyristor 5 GTO thyristor ABB
    Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 3000 25 1.90 0.53 2200 V A kA V Gate turn-off Thyristor 5SGA 30J4505 mΩ V Doc. No. 5SYA 1204-04 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 30J4505 CH-5600 ABB 5SGA ABB thyristor 5 GTO thyristor ABB

    press pack thyristor 10000 VDRM

    Abstract: LS 7313 S 5SGA40L4501 LS 7313 - S
    Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 4000 25x103 2.1 0.58 2800 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGA 40L4501 Doc. No. 5SYA1208-02 March 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 40L4501 5SYA1208-02 CH-5600 press pack thyristor 10000 VDRM LS 7313 S 5SGA40L4501 LS 7313 - S

    Untitled

    Abstract: No abstract text available
    Text: Key Parameters VDRM = 4500 ITGQM = 4000 ITSM = 25 VT0 = 1.20 rT = 0.65 VDClink = 2800 V A kA V Gate turn-off Thyristor 5SGF 40L4502 mΩ V Doc. No. 5SYA 1209-04 April 98 Features The 5SGF 40L4502 is a 91 mm buffered layer GTO with exceptionally low dynamic and static


    Original     		PDF 40L4502 40L4502 CH-5600

    GTO Snubber Capacitor

    Abstract: 30J60
    Text: Key Parameters VDRM = 6000 ITGQM = 3000 ITSM = 24 VT0 = 1.70 rT = 0.60 VDClink = 3800 V A kA V Gate turn-off Thyristor 5SGT 30J6004 mΩ V Doc. No. 5SYA 1212-04 April 98 Features The 5SGT 30J6004 is an 85 mm buffered layer, Transparent Emitter non-shorted anode GTO


    Original     		PDF 30J6004 30J6004 CH-5600 GTO Snubber Capacitor 30J60

    1206-01

    Abstract: 25H25 25H2501 ABB 5SGA ABB thyristor 5 GTO ABB GTO thyristor ABB
    Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 2500 16 1.66 0.57 1400 V A kA V Gate turn-off Thyristor 5SGA 25H2501 mΩ V Doc. No. 5SYA 1206-01 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 25H2501 CH-5600 1206-01 25H25 25H2501 ABB 5SGA ABB thyristor 5 GTO ABB GTO thyristor ABB

    Untitled

    Abstract: No abstract text available
    Text: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 6000 1100 18x103 1.5 0.6 3800 V A A V mΩ V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA1109-03 Jan. 10 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in highvoltage GTO converters


    Original     		PDF 10H6004 5SYA1109-03 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 4500 1200 25x103 1.3 0.48 2800 V A A V mΩ V Fast Recovery Diode 5SDF 13H4501 Doc. No. 5SYA1104-02 Oct. 06 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO


    Original     		PDF 13H4501 5SYA1104-02 CH-5600

    ABB EA 200

    Abstract: reverse-conducting thyristor 5SGR30L4502 12.000 7J abb S count GTO 5SGR
    Text: Key Parameters Vdrm = 4500 V Itgqm = 3000 A Itsm = II o1 > ^DClink 5SGR 30L4502 24 kA 1.9 V = 0.7 m i 2800 V rT Reverse Conducting Gate turn-off Thyristor Doc. No. 5SYA 1216-02 Feb.97 Features The 5SGR 30L4502 is a 91 mm buffered layer, reverse-conducting GTO offering low lGT as


    OCR Scan     		PDF 30L4502 30L4502 CH-5600 ABB EA 200 reverse-conducting thyristor 5SGR30L4502 12.000 7J abb S count GTO 5SGR