igbt welding machine scheme
Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and
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fairchild soic marking
Abstract: q2 marking soic-8
Text: FDS4935 Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive
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fairchild soic marking
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S1G15
Abstract: No abstract text available
Text: FDS9926A Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage
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2539a
Abstract: IC TRACE CODE ON BOX LABEL INFORMATION AA MARKING CODE SO8 marking code ng Fairchild TRACE CODE ON BOX PACKING LABEL
Text: FDS5670 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate
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IC TRACE CODE ON BOX LABEL INFORMATION
AA MARKING CODE SO8
marking code ng Fairchild
TRACE CODE ON BOX PACKING LABEL
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CBVK741B019
Abstract: F63TNR F852 FDS6814 FDS9953A L86Z AA MARKING CODE SO8
Text: FDS6814 Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using a rugged gate version of Fairchild's advanced PowerTrenchTM process. It has been optimized for power management applications which require a wide
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Untitled
Abstract: No abstract text available
Text: FDS3690 100V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • RDS ON = 0.066 Ω @ VGS = 6 V.
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FAIRCHILD soic MARKING
Abstract: No abstract text available
Text: FDS3590 80V N-Channel PowerTrenchTM MOSFET Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 6.5 A, 80 V. RDS ON = 0.037 Ω
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AA MARKING CODE SO8
Abstract: CBVK741B019 F63TNR F852 FDS6815 FDS9953A L86Z SO8 package fairchild fairchild soic marking
Text: FDS6815 Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These P-Channel 2.5V specified MOSFETs are produced using a rugged gate version of Fairchild's advanced PowerTrench TM process. It has been optimized for power management applications which require a wide
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AA MARKING CODE SO8
CBVK741B019
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F852
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FDS9953A
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fairchild soic marking
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FDS6694
Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
Text: FDS6694 30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FAIRCHILD soic MARKING
Abstract: No abstract text available
Text: FDS2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 4.3 A, 150 V. RDS ON = 0.085 Ω @ VGS = 10 V
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Text: FDS2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 3.2 A, 200 V. RDS ON = 0.120 Ω @ VGS = 10 V
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DIODE AA 119
Abstract: AA MARKING CODE SO8
Text: FDS6690S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6690S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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Untitled
Abstract: No abstract text available
Text: FDS6609A P-Channel Logic Level PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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4542 so8
Abstract: CQ228
Text: Si4542DY 30V Complementary PowerTrenchMOSFET General Description Features This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for
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4463 SO8 MOSFET
Abstract: 4463 B
Text: Si4463DY P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V .
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Text: SI9426DY Single N-Channel, 2.5V Specified MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s high cell density DMOS technology process that has been especially tailored to minimize on-state resistance and yet
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fds3890
Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
Text: FDS3890 80V N-Channel Dual PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. 4.7 A, 80 V.
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Abstract: No abstract text available
Text: FDS6572A 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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Text: FDS4470 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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Text: FDS3812 80V N-Channel Dual PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. 3.4 A, 80 V.
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Text: FDS6576 P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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CBVK741B019
Abstract: F011 F63TNR F852 FDS2670 FDS9953A L86Z
Text: FDS2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 3.0 A, 200 V. RDS ON = 130 mΩ @ VGS = 10 V
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CBVK741B019
Abstract: F011 F63TNR F852 FDS3512 FDS9953A L86Z
Text: FDS3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 4.0 A, 80 V
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Abstract: F011 F63TNR F852 FDS6672A FDS9953A L86Z
Text: FDS6672A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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